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Greatly Enhanced Methanol Oxidation Reaction of CoPt Truncated Octahedral Nanoparticles by External Magnetic Fields

Energy & Environmental materials 2023年第5期6卷 201-210页

作者： Mengyuan Zhu Yi Wang Yanfei Wu Jialong Liu Jingyan Zhang He Huang Xinqi Zheng Jianxin Shen Ruijie Zhao Wenda Zhou Shouguo Wang Beijing Advanced Innovation Center for Materials Genome Engineering School of Materials Science and EngineeringUniversity of Science and Technology BeijingBeijing 100083China Department of Physics and Electronics School of Mathematics and PhysicsBeijing University of Chemical TechnologyBeijing 100029China

Tunable behavior in electrocatalysis by external multifields,such as magnetic field,thermal field,and electric field,is the most promising strategy to expand the theory,design,and synthesis of state-of-the-art catalysts and the cell in the near ***,a systematic investigation for the effect of external magnetic field and thermal field on methanol oxidation reactions(MOR)in magnetic nanoparticles is *** Co_(42)Pt_(58)truncated octahedral nanoparticles(TONPs),the catalytic performance in MOR is greatly increased to the maximum of 14.1%by applying a magnetic field up to 3000 Oe,and it shows a monotonical increase with increasing working *** magnetic enhanced effect is closely related to the Co content of Co_(x)Pt_(100-x)***,the enhancement effect under a magnetic field is more obvious for Co_(42)Pt_(58)TONPs annealed at 650℃.First-principle calculation points out that the magnetic fields can facilitate the dehydrogenation of both methanol and water by suppression of entropy of the electron spin and lowering of the activation barrier,where OH_(ad)intermediates on Co sites play a more important *** application of magnetic fields together with thermal fields in MOR provides a new prospect to manipulate the performance of direct methanol fuel cells,which will accelerate their potential applications.

关键词： external magnetic fields first-principle calculation methanol oxidation reaction Pt-based magnetic nanomaterials

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Ferroelectric materials, devices, and chips technologies for advanced computing and memory applications: development and challenges

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science China(Information sciences) 2025年第06期 118-173页

作者： Xiao YU Ni ZHONG Yan CHENG Tianjiao XIN Qing LUO Tiancheng GONG Jiezhi CHEN Jixuan WU Ran CHENG Zhiyuan FU Kechao TANG Jin LUO Tianling REN Fei XUE Lin CHEN Tianyu WANG Xueqing LI Xiuyan LI Ping WANG Xinqiang WANG Jie SUN Anquan JIANG Peiyuan DU Bing CHEN Chengji JIN Jiajia CHEN Haoji QIAN Wei MAO Siying ZHENG Huan LIU Haiwen XU Can LIU Zhihao SHEN Xiaoxi LI Bochang LI Zheng-Dong LUO Jiuren ZHOU Yan LIU Yue HAO Genquan HAN Hangzhou Institute of Technology Xidian University Faculty of Integrated Circuits Xidian University Key Laboratory of Polar Materials and Devices(MOE) Department of Electronics East China Normal University State Key Lab of Fabrication Technologies for Integrated Circuits Institute of Microelectronics of Chinese Academy of Sciences School of Information Science and Engineering Shandong University College of Integrated Circuit Zhejiang University School of Integrated Circuits Southeast University School of Integrated Circuits Peking University School of Integrated Circuits Tsinghua University Center for Quantum Matter School of Physics Zhejiang University School of Microelectronics State Key Laboratory of Integrated Chips and Systems Fudan University Department of Electronic Engineering Tsinghua University National Key Laboratory of Micro and Nano Fabrication Technology and the Department of Micro-Nano Electronics Shanghai Jiao Tong University State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-Optoelectronics School of Physics Peking University Hangzhou Huarui Chip Innovation Technology Co. Ltd.

Hafnium（Hf） oxide-based ferroelectric materials have emerged as a transformative platform for next-generation non-volatile memory and advanced computing technologies. This review comprehensively examines the development, challenges, and applications of HfO2ferroelectrics, emphasizing their CMOS compatibility, scalability, and robust polarization at nanoscale dimensions. Breakthroughs in doping strategies, stress engineering, and VO control have stabilized the metastable orthorhombic phase, enabling high-performance devices such as ferroelectric RAM（FeRAM）, ferroelectric field-effect transistors（FeFETs）, and ferroelectric tunnel junctions（FTJs）. These devices offer ultrafast switching, low power consumption, and multi-level storage, driving innovations in neuromorphic computing, in-memory processing, and cryogenic systems; nonetheless, they face ongoing challenges in reliability, such as fatigue and imprint effects, and scalability at sub-5 nm technology nodes. Emerging frontiers, such as wurtzite-structured nitrides（e.g., AlScN） and antiferroelectric ZrO2-based systems, have garnered significant attention due to their exceptionally high remanent polarization and promising potential for enhanced endurance, respectively. Further addressing the reliability issues of these emerging ferroelectric materials and the challenges associated with large-scale integration processes through interdisciplinary efforts will unlock the full potential of ferroelectric technologies, positioning them as pivotal enablers of post-Moore computing architectures and sustainable AI-driven applications.

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Boron nitride nanofibers enhanced composite PEO-based solid-state polymer electrolytes for lithium metal batteries

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Chinese Chemical Letters 2024年第6期35卷 216-221页

作者： Qianqian Song Yunting Zhang Jianli Liang Si Liu Jian Zhu Xingbin Yan School of Materials Science and Engineering Sun Yat-Sen UniversityGuangzhou 510275China College of Physics and Materials Science Tianjin Normal UniversityTianjin 300387China Department of Chemistry&Center of Super-Diamond and Advanced Films(COSDAF) City University of Hong KongHong Kong 999077China Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology School of Physics and Optoelectronic EngineeringFoshan UniversityFoshan 528225China

Polyethylene oxide(PEO)-based solid-state polymer electrolytes(SPEs)are limited by their poor cyclic stability and inferior ionic conductivity for applicating in high-safety,long-cycling and high-energy-density lithium metal ***,porous boron nitride nanofibers(BNNFs)are filled into PEO-based SPE,which significantly suppresses Li dendrites growth and enhances the electrochemical performance of Li metal *** with high porosity have more active sites to connect with PEO,which can effectively reduce the crystallinity of the PEO matrix and enhance its ionic ***,owing to the hardness and good stability of BNNFs,BNNFs/PEO/Li TFSI electrolyte exhibits a wider electrochemical window,better mechanical property and higher thermal stability compared with PEO/Li TFSI ***,the Li symmetric cell composed of 1%BNNFs/PEO/Li TFSI performs good cyclic stability(>1800 h),and the Li||1%BNNFs/PEO/Li TFSI||LFP full battery shows obviously improved performances in charge-discharge polarization voltage,discharge specific capacity,rate performance and cyclic stability than the Li||PEO/Li TFSI||LFP battery.

关键词： Solid-state polymer electrolyte Boron nitride nanofibers Lithium metal battery Ionic conductivity Li dendrite

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Electron doping induced semiconductor to metal transitions in ZrSe2 layers via copper atomic intercalation

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Nano Research 2018年第9期11卷 4914-4922页

作者： Zahir Muhammad Kejun Mu Haifeng Lv Chuanqiang Wu Zia ur Rehman Muhammad Habib Zhe Sun Xiaojun Wu Li Song National Synchrotron Radiation Laboratory CAS Center for Excellence in Nanoscience CAS Key Laboratory of Strongly-coupled Quantum Matter Physics University of Science and Technology of China Hefei 230029 China CAS Key Laboratory of Materials for Energy Conservation Synergetic Innovation Centre of Quantum Information & Quantum Physics CAS Center for Excellence in Nanoscience and Department of Material Science and Engineering University of Science and Technology of China Hefei 230026 China

Atomic intercalation in two-dimensional （2D） layered materials can be used to engineer the electronic structure at the atomic scale and generate tuneable physical and chemical properties which are quite distinct in comparison with the pristine material. Among them, electron-doped engineering induced by intercalation is an efficient route to modulate electronic states in 2D layers. Herein, we demonstrate a semiconducting to metallic phase transition in zirconium diselenide （ZrSe2） single crystals via controllable incorporation of copper （Cu） atoms. Our angle resolved photoemission spectroscopy （ARPES） measurements and first-principles density functional theory （DFT） calculations dearly revealed the emergence of conduction band dispersion at the M/L point of the Brillouin zone due to Cu-induced electron doping in ZrSe2 interlayers. Moreover, electrical measurements in ZrSe2 revealed semiconducting behavior, while the Cu-intercalated ZrSe2 exhibited a linear current-voltage curve with metallic character. The atomic intercalation approach may have high potential for realizing transparent electron-doping systems for many specific 2D-based nanoelectronic applications.

关键词： layered materials phase transition angle resolved photoemission spectroscopy electron doping

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Semitransparent organic photovoltaics enabled by transparent p-type inorganic semiconductor and near-infrared acceptor

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Journal of Energy Chemistry 2024年第9期96卷 351-358页

作者： Xue Yan Jiayu Wang Wei He Top Archie Dela Peña Can Zhu Hailin Yu Yingyue Hu Cenqi Yan Shengqiang Ren Xingyu Chen Zhe Wang Jiaying Wu Mingjie Li Jianlong Xia Lei Meng Shirong Lu Dewei Zhao Mikhail Artemyev Yongfang Li Pei Cheng College of Polymer Science and Engineering State Key Laboratory of Polymer Materials EngineeringSichuan UniversityChengdu 610065SichuanChina Department of Applied Physics The Hong Kong Polytechnic UniversityKowloonHong Kong 999077China Beijing National Laboratory for Molecular Sciences CAS Key Laboratory of Organic SolidsInstitute of ChemistryChinese Academy of SciencesBeijing 100190China College of Materials Science and Engineering&Engineering Research Center of Alternative Energy Materials&Devices Ministry of EducationSichuan UniversityChengdu 610065SichuanChina Department of Material Science and Technology Taizhou UniversityTaizhou 318000ZhejiangChina Advanced Materials Thrust Function HubThe Hong Kong University of Science and Technology(Guangzhou)Guangzhou 511400GuangdongChina State Key Laboratory of Advanced Technology for Materials Science and Processing Center of Smart Materials and DevicesWuhan University of TechnologyWuhan 430070HubeiChina Department of Civil1nd Environmental Engineering The Hong Kong University of Science and TechnologyHong Kong 999077China Research Institute for Physical Chemical Problems Belarusian State UniversityMinsk 220006Belarus

Semitransparent organic photovoltaics(STOPVs)have gained wide attention owing to their promising applications in building-integrated photovoltaics,agrivoltaics,and floating *** semiconductors with high charge carrier mobility usually have planar and conjugated structures,thereby showing strong absorption in visible *** this work,a new concept of incorporating transparent inorganic semiconductors is proposed for high-performance ***(I)thiocyanate(CuSCN)is a visible-transparent inorganic semiconductor with an ionization potential of 5.45 eV and high hole *** transparency of CuSCN benefits high average visible transmittance(AVT)of *** energy levels of CuSCN as donor match those of near-infrared small molecule acceptor BTP-eC9,and the formed heterojunction exhibits an ability of exciton *** mobility of CuSCN contributes to a more favorable charge transport channel and suppresses charge *** control STOPVs based on PM6/BTP-eC9 exhibit an AVT of 19.0%with a power conversion efficiency(PCE)of 12.7%.Partial replacement of PM6 with CuSCN leads to a 63%increase in transmittance,resulting in a higher AVT of 30.9%and a comparable PCE of 10.8%.

关键词： Copper(I)thiocyanate Inorganic semiconductor Semitransparent Organic photovoltaics Charge dissociation

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Confinement induced three-dimensional trajectories of microswimmers in rectangular channels

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Physical Review Fluids 2024年第8期9卷 083302-083302页

作者： Byjesh N. Radhakrishnan Ahana Purushothaman Ranabir Dey Sumesh P. Thampi Department of Chemical Engineering Department of Physics and Materials Science Department of Chemical Engineering College of Engineering Department of Mechanical and Aerospace Engineering

We study the trajectories of a model microorganism inside three-dimensional channels with square and rectangular cross sections. Using (1) numerical simulations based on the lattice-Boltzmann method and (2) analytical expressions using far-field hydrodynamic approximations and the method of images we systematically investigate the role of the strength and finite-size of the squirmer, confinement dimensions, and initial conditions in determining the three-dimensional trajectories of microswimmers. Our results indicate that the hydrodynamic interactions with the confining walls of the channel significantly affect the swimming speed and trajectory of the model microswimmer. Specifically, pullers always display sliding motion inside the channel: weak pullers slide through the channel center line, while strong pullers slide through a path close to any of the walls. Pushers generally follow helical motion in a square channel. Unlike pullers and pushers, the trajectories of neutral swimmers are not easy to generalize and are sensitive to the initial conditions. Despite this diversity in the trajectories, the far-field expressions capture the essential features of channel-confined swimmers. Finally, we propose a method based on the principle of superposition to understand the origin of the three-dimensional trajectories of channel confined swimmers. Such construction allows us to predict and justify the origin of apparently complex three-dimensional trajectories generated by different types of swimmers in channels with square and rectangular cross sections.

关键词： Complex fluids Living matter & active matter Self-propelled particles

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On The Mechanism of Nucleation in Pulsed-laser Quenched Si Films on SiO 2

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MRS Online Proceedings Library 2021年第1期1245卷 1-6页

作者： Y. Deng Q. Hu U. J. Chung A. M. Chitu A. B. Limanov S. James Im Program in Materials Science and Engineering Department of Applied Physics and Applied Mathematics Columbia University New York USA

We have investigated the solid nucleation mechanism in laser-quenched Si films on SiO2. Previously neglected experimental steps, consisting of BHF-etching and irradiation in vacuum, were implemented to reduce potential extrinsic influences. The resulting experimental findings and computational analysis lead us to conclude that solid nucleation consistently takes place heterogeneously at, and only at, the bottom liquid Si-SiO2 interface.

关键词： Si thin film nucleation & growth

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Performance enhancement in organic-inorganic hybrid photovoltaic cells by adding a carbon-nanostructure interface layer

Performance enhancement in organic-inorganic hybrid photovol...

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37th IEEE Photovoltaic Specialists Conference, PVSC 2011

作者： Hsu, Fang-Chi Chen, Chiang-Ting Sung, Yun-Ming Chen, Yang-Fang Department of Materials Science and Engineering National United University Miaoli 360 Taiwan Department of Physics National Taiwan University Taipei 106 Taiwan

ISBN: (纸本)9781424499656

Inverted photovoltaic configuration overcomes the stability problem in conventional polymer photovoltaic device. However, the charge transport property at the organic-inorganic junctions is one of the important issues affecting the performance of this type of photovoltaic cells. To solve the problem, we deposit a carbon-nanostructure layer, C60, on the inorganic ZnO-nanorod array surface to be in contact with a polymer blend, poly(3-hexylthiophene):(6,6)-phenyl C61 butyric acid methyl ester (P3HT:PCBM), forming a ZnO/C60/P3HT:PCBM/Ag device. In the presence of the C60 layer, both the short circuit current (JSC) and open circuit voltages (VOC) are improved leading to an enhancement in the power conversion efficiency from 1.3% to 2.1%. The role of the C 60 layer is to assist the exciton separation and transport the electrons to the collecting electrode. © 2011 IEEE.

关键词： Butyric acid

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In situ Observation of Disconnection-mediated Nucleation of Annealing Twins at Triple Junctions

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Microscopy and microanalysis : the official journal of Microscopy Society of America, Microbeam Analysis Society, Microscopical Society of Canada 2023年第1期29卷 1479-1480页

作者： Tian, Yuan Bi, Yutong Xu, Mingjie Gong, Xiaoguo Zimmerman, Jonathan Rabkin, Eugen Han, Jian Srolovitz, David J. Pan, Xiaoqing Department of Materials Science and Engineering University of California Irvine CA United States Irvine Materials Research Institute (IMRI) University of California Irvine United Kingdom Department of Mechanical Engineering University of Hong Kong Hong Kong SAR China Department of Materials Science and Engineering Technion - Israel Institute of Technology Haifa Israel Department of Materials Science and Engineering City University of Hong Kong Hong Kong SAR China Department of Physics and Astronomy University of California Irvine CA United States

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Fabrication and characterization of controllable grain boundary arrays in solution-processed small molecule organic semiconductor films

Fabrication and characterization of controllable grain bound...

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作者： Wo, Songtao Headrick, Randall L. Anthony, John E. Department of Physics and Materials Science Program University of Vermont Burlington VT 05405 United States Department of Chemistry University of Kentucky Lexington KY 40506 United States

We have produced solution-processed thin films of 6,13-bis(tri-isopropyl- silylethynyl) pentacene with grain sizes from a few micrometers up to millimeter scale by lateral crystallization from a rectangular stylus. Grains are oriented along the crystallization direction, and the grain size transverse to the crystallization direction depends inversely on the writing speed, hence forming a regular array of oriented grain boundaries with controllable spacing. We utilize these controllable arrays to systematically study the role of large-angle grain boundaries in carrier transport and charge trapping in thin film transistors. The effective mobility scales with the grain size, leading to an estimate of the potential drop at individual large-angle grain boundaries of more than 1 volt. This result indicates that the structure of grain boundaries is not molecularly abrupt, which may be a general feature of solution-processed small molecule organic semiconductor thin films, where relatively high energy grain boundaries are typically formed. Transient measurements after switching from positive to negative gate bias or between large and small negative gate bias reveal reversible charge trapping, with time constants on the order of 10 s and trap densities that are correlated with grain boundary density. We suggest that charge diffusion along grain boundaries and other defects is the rate-determining mechanism of the reversible trapping. © 2012 American Institute of physics.

关键词： Grain boundaries

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