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RETRACTION: Quantized Majorana conductance (vol 556, pg 74, 2018) (Retraction of Vol 556, Pg 74, 2018)

NATURE 2021年第7851期591卷 E30-E30页

作者： Zhang, Hao Liu, Chun-Xiao Gazibegovic, Sasa Xu, Di Logan, John A. Wang, Guanzhong Van Loo, Nick Bommer, Jouri D. S. de Moor, Michiel W. A. Car, Diana Roy, L. M. Veld, Op Het van Veldhoven, Petrus J. Koelling, Sebastian Verheijen, Marcel A. Pendharkar, Mihir Pennachio, Daniel J. Shojaei, Borzoyeh Lee, Joon Sue Palmstrom, Chris J. Bakkers, Erik P. A. M. Sarma, S. Das Kouwenhoven, Leo P. QuTech and Kavli Institute of NanoScience Delft University of Technology 2600 GA Delft The Netherlands Condensed Matter Theory Center and Joint Quantum Institute Department of Physics University of Maryland College Park Maryland 20742 USA Department of Applied Physics Eindhoven University of Technology 5600 MB Eindhoven The Netherlands Materials Engineering University of California Santa Barbara Santa Barbara California 93106 USA Philips Innovation Services Eindhoven High Tech Campus 11 5656AE Eindhoven The Netherlands Electrical and Computer Engineering University of California Santa Barbara Santa Barbara California 93106 USA California NanoSystems Institute University of California Santa Barbara Santa Barbara California 93106 USA Microsoft Station Q Delft 2600 GA Delft The Netherlands

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Towards a scalable quantum computer

Towards a scalable quantum computer

引用

International Conference on Design and Technology of Integrated Systems in Nanoscale Era (DTIS)

作者： C. G. Almudever N. Khammassi L. Hutin M. Vinet M. Babaie F. Sebastiano E. Charbon K. Bertels Department of Quantum and Computer Engineering and QuTech Delft University of Technology CEA-LETI

A quantum machine may solve some complex problems that are intractable for even the most powerful classical computers. By exploiting quantum superposition and entanglement phenomena, quantum algorithms can achieve from polynomial to exponential speed up when compared to their best classical counterparts. A quantum computer will be a part of a heterogeneous, multi-core computer in which a classical processor will interact with several accelerators such as FPGAs, GPUs and also a quantum co-processor. Figure 1 shows the different layers of the quantum computer system stack [1]. Building such a quantum system requires contributions from different fields such as physics, electronics, computer science and computer engineering for addressing the following challenges: i) build scalable quantum chips integrating qubits with long coherence times and high-fidelity operations, ii) develop classical control electronics at possibly cryogenic temperatures and iii) create the microarchitecture as well as the software for quantum computation.

关键词： quantum computing Cryogenics quantum entanglement Buildings Coherence Temperature control Microarchitecture

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CMOS-based cryogenic control of silicon quantum circuits

arXiv

引用

arXiv 2020年

作者： Xue, Xiao Patra, Bishnu van Dijk, Jeroen P.G. Samkharadze, Nodar Subramanian, Sushil Corna, Andrea Jeon, Charles Sheikh, Farhana Juarez-Hernandez, Esdras Esparza, Brando Perez Rampurawala, Huzaifa Carlton, Brent Ravikumar, Surej Nieva, Carlos Kim, Sungwon Lee, Hyung-Jin Sammak, Amir Scappucci, Giordano Veldhorst, Menno Sebastiano, Fabio Babaie, Masoud Pellerano, Stefano Charbon, Edoardo Vandersypen, Lieven M.K. QuTech Delft University of Technology Lorentzweg 1 Delft2628 CJ Netherlands Kavli Institute of Nanoscience Delft University of Technology Delft2600 GA Netherlands Department of Quantum and Computer Engineering Delft University of Technology Mekelweg 4 Delft2628CD Netherlands Stieltjesweg 1 Delft2628 CK Netherlands Intel Corporation HillsboroOR97124 United States Intel Guadalajara Zapopan45017 Mexico Lausanne1015 Switzerland

The most promising quantum algorithms require quantum processors hosting millions of quantum bits when targeting practical applications [1]. A major challenge towards large-scale quantum computation is the interconnect complexity. In current solid-state qubit implementations, a major bottleneck appears between the quantum chip in a dilution refrigerator and the room temperature electronics. Advanced lithography supports the fabrication of both CMOS control electronics and qubits in silicon. When the electronics are designed to operate at cryogenic temperatures, it can ultimately be integrated with the qubits on the same die or package, overcoming the wiring bottleneck [2–5]. Here we report a cryogenic CMOS control chip operating at 3 K, which outputs tailored microwave bursts to drive silicon quantum bits cooled to 20 mK. We first benchmark the control chip and find electrical performance consistent with 99.99% fidelity qubit operations, assuming ideal qubits. Next, we use it to coherently control actual silicon spin qubits [6–8] and find that the cryogenic control chip achieves the same fidelity as commercial instruments. Furthermore, we highlight the extensive capabilities of the control chip by programming a number of benchmarking protocols as well as the Deutsch-Josza algorithm [9] on a two-qubit quantum processor. These results open up the path towards a fully integrated, scalable silicon-based quantum computer. Copyright © 2020, The Authors. All rights reserved.

关键词： Silicon

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In-plane selective area InSb-Al nanowire quantum networks

arXiv

引用

arXiv 2021年

作者： Op het Veld, Roy L.M. Xu, Di Schaller, Vanessa Verheijen, Marcel A. Peters, Stan M.E. Jung, Jason Tong, Chuyao Wang, Qingzhen de Moor, Michiel W.A. Hesselmann, Bart Vermeulen, Kiefer Bommer, Jouri D.S. Lee, Joon Sue Sarikov, Andrey Pendharkar, Mihir Marzegalli, Anna Koelling, Sebastian Kouwenhoven, Leo P. Miglio, Leo Palmstrom, Chris J. Zhang, Hao Bakkers, Erik P.A.M. Department of Applied Physics Eindhoven University of Technology Eindhoven5600MB Netherlands QuTech and Kavli Institute of Nanoscience Delft University of Technology Delft2600GA Netherlands Eurofins Materials Science Eindhoven High Tech Campus 11 Eindhoven5656AE Netherlands California NanoSystems Institute University of California Santa BarbaraCA93106 United States L-NESS Dept. of Materials Science University of Milano-Bicocca MilanoI-20125 Italy V. Lashkarev Institute of Semiconductor Physics National Academy of Sciences of Ukraine Kiev Ukraine L-NESS Dept. of Physics Politecnico di Milano ComoI-22100 Italy Microsoft Quantum Lab Delft Delft2600GA Netherlands Electrical and Computer Engineering University of California Santa BarbaraCA93106 United States Materials Department University of California Santa BarbaraCA93106 United States State Key Laboratory of Low Dimensional Quantum Physics Department of Physics Tsinghua University Beijing100084 China Beijing Academy of Quantum Information Sciences Beijing100193 China

Strong spin-orbit semiconductor nanowires coupled to a superconductor are predicted to host Majorana zero modes. Exchange (braiding) operations of Majorana modes form the logical gates of a topological quantum computer and require a network of nanowires. Here, we develop an in-plane selective-area growth technique for InSb-Al semiconductor-superconductor nanowire networks with excellent quantum transport properties. Defect-free transport channels in InSb nanowire networks are realized on insulating, but heavily mismatched InP substrates by 1) full relaxation of the lattice mismatch at the nanowire/substrate interface on a (111)B substrate orientation, 2) nucleation of a complete network from a single nucleation site, which is accomplished by optimizing the surface diffusion length of the adatoms. Essential quantum transport phenomena for topological quantum computing are demonstrated in these structures including phase-coherent transport up to 10 µm and a hard superconducting gap accompanied by 2e-periodic Coulomb oscillations with an Al-based Cooper pair island integrated in the nanowire network. © 2021, CC BY.

关键词： Indium antimonides

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Full parity phase diagram of a proximitized nanowire island

arXiv

引用

arXiv 2020年

作者： Shen, J. Winkler, G.W. Borsoi, F. Heedt, S. Levajac, V. Wang, J.-Y. van Driel, D. Bouman, D. Gazibegovic, S. Op Het Veld, R.L.M. Car, D. Logan, J.A. Pendharkar, M. Palmstrøm, C.J. Bakkers, E.P.A.M. Kouwenhoven, L.P. van Heck, Bernard QuTech and Kavli Institute of Nanoscience Delft University of Technology Delft2600 GA Netherlands Beijing National Laboratory for Condensed Matter Physics Institute of Physics Chinese Academy of Sciences Beijing100190 China Microsoft Quantum Microsoft Station Q University of California Santa Barbara Santa BarbaraCA93106 United States Microsoft Quantum Lab Delft Delft2600 GA Netherlands Department of Applied Physics Eindhoven University of Technology Eindhoven5600 MB Netherlands Materials Department University of California Santa Barbara Santa BarbaraCA93106 United States Electrical and Computer Engineering University of California Santa Barbara Santa BarbaraCA93106 United States

We measure the charge periodicity of Coulomb blockade conductance oscillations of a hybrid InSb-Al island as a function of gate voltage and parallel magnetic field. The periodicity changes from 2e to 1e at a gate-dependent value of the magnetic field, B∗, decreasing from a high to a low limit upon increasing the gate voltage. In the gate voltage region between the two limits, which our numerical simulations indicate to be the most promising for locating Majorana zero modes, we observe correlated oscillations of peak spacings and heights. For positive gate voltages, the 2e-1e transition with low B∗ is due to the presence of non-topological states whose energy quickly disperses below the charging energy due to the orbital effect of the magnetic field. Our measurements highlight the importance of a careful exploration of the entire available phase space of a proximitized nanowire as a prerequisite to define future topological qubits. Copyright © 2020, The Authors. All rights reserved.

关键词： Threshold voltage

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Roadmap on quantum nanotechnologies

arXiv

引用

arXiv 2021年

作者： Laucht, Arne Hohls, Frank Ubbelohde, Niels Fernando Gonzalez-Zalba, M. Reilly, David J. Stobbe, Søren Schröder, Tim Scarlino, Pasquale Koski, Jonne V. Dzurak, Andrew Yang, Chih-Hwan Yoneda, Jun Kuemmeth, Ferdinand Bluhm, Hendrik Pla, Jarryd Hill, Charles Salfi, Joe Oiwa, Akira Muhonen, Juha T. Verhagen, Ewold LaHaye, M.D. Kim, Hyun Ho Tsen, Adam W. Culcer, Dimitrie Geresdi, Attila Mol, Jan A. Mohan, Varun Jain, Prashant K. Baugh, Jonathan Centre for Quantum Computation and Communication Technology School of Electrical Engineering and Telecommunications UNSW SydneyNSW2052 Australia Physikalisch-Technische Bundesanstalt Braunschweig38116 Germany Quantum Motion Technologies Nexus Discovery Way LeedsLS2 3AA United Kingdom School of Physics University of Sydney SydneyNSW2006 Australia Microsoft Corporation Station Q Sydney University of Sydney SydneyNSW2006 Australia Department of Photonics Engineering DTU Fotonik Technical University of Denmark Building 343 Kgs. LyngbyDK-2800 Denmark Department of Physics Humboldt-Universität zu Berlin Berlin12489 Germany Department of Physics ETH Zürich ZürichCH-8093 Switzerland Niels Bohr Institute University of Copenhagen Copenhagen2100 Denmark JARA-FIT Institute for Quantum Information RWTH Aachen University and Forschungszentrum Jülich Aachen52074 Germany School of Physics University of Melbourne Melbourne Australia Department of Electrical and Computer Engineering The University of British Columbia VancouverBCV6T 1Z4 Canada The Institute of Scientific and Industrial Research Osaka University Ibaraki Osaka567-0047 Japan Center for Quantum Information and Quantum Biology Institute for open and Transdisciplinary Research Initiative Osaka University Osaka560-8531 Japan Center for Nanophotonics AMOLF Amsterdam1098 XG Netherlands School of Physics The University of New South Wales Sydney2052 Australia Australian Research Council Centre of Excellence in Future Low-Energy Electronics Technologies UNSW Node The University of New South Wales Sydney2052 Australia QuTech and Kavli Institute of Nanoscience Delft University of Technology Delft2600 GA Netherlands School of Physics and Astronomy Queen Mary University of London E1 4NS United Kingdom Department of Materials Science and Engineering University of Illinois at Urbana-Champaign UrbanaIL61801 United States Department of Chemistry University of Illinois at Urbana-Champaign Urbana

quantum phenomena are typically observable at length and time scales smaller than those of our everyday experience, often involving individual particles or excitations. The past few decades have seen a revolution in the ability to structure matter at the nanoscale, and experiments at the single particle level have become commonplace. This has opened wide new avenues for exploring and harnessing quantum mechanical effects in condensed matter. These quantum phenomena, in turn, have the potential to revolutionize the way we communicate, compute and probe the nanoscale world. Here, we review developments in key areas of quantum research in light of the nanotechnologies that enable them, with a view to what the future holds. Materials and devices with nanoscale features are used for quantum metrology and sensing, as building blocks for quantum computing, and as sources and detectors for quantum communication. They enable explorations of quantum behaviour and unconventional states in nano- and opto-mechanical systems, low-dimensional systems, molecular devices, nano-plasmonics, quantum electrodynamics, scanning tunnelling microscopy, and more. This rapidly expanding intersection of nanotechnology and quantum science/technology is mutually beneficial to both fields, laying claim to some of the most exciting scientific leaps of the last decade, with more on the horizon. © 2021, CC BY.

关键词： quantum computers

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Selective-area chemical beam epitaxy of in-plane InAs one-dimensional channels grown on InP(001), InP(111)B, and InP(011) surfaces

引用

Physical Review Materials 2019年第8期3卷 084606-084606页

作者： Joon Sue Lee Sukgeun Choi Mihir Pendharkar Daniel J. Pennachio Brian Markman Michael Seas Sebastian Koelling Marcel A. Verheijen Lucas Casparis Karl D. Petersson Ivana Petkovic Vanessa Schaller Mark J. W. Rodwell Charles M. Marcus Peter Krogstrup Leo P. Kouwenhoven Erik P. A. M. Bakkers Chris J. Palmstrøm California NanoSystems Institute University of California Santa Barbara California 93106 USA Electrical and Computer Engineering Department University of California Santa Barbara California 93106 USA Materials Department University of California Santa Barbara California 93106 USA Department of Applied Physics Eindhoven University of Technology 5600 MB Eindhoven The Netherlands Center for Quantum Devices Niels Bohr Institute University of Copenhagen Universitetsparken 5 2100 Copenhagen Denmark Microsoft Quantum - Copenhagen University of Copenhagen Universitetsparken 5 2100 Copenhagen Denmark QuTech Delft University of Technology Delft 2600 GA The Netherlands Microsoft Quantum Materials Lab Copenhagen Kanalvej 7 2800 Kongens Lyngby Denmark Microsoft Station Q Delft Delft 2600 GA The Netherlands

We report on the selective-area chemical beam epitaxial growth of InAs in-plane, one-dimensional (1D) channels using patterned SiO2-coated InP(001), InP(111)B, and InP(011) substrates to establish a scalable platform for topological superconductor networks. Top-view scanning electron micrographs show excellent surface selectivity and dependence of major facet planes on the substrate orientations and ridge directions, and the ratios of the surface energies of the major facet planes were estimated. Detailed structural properties and defects in the InAs nanowires (NWs) were characterized by transmission electron microscopic analysis of cross-sections perpendicular to the NW ridge direction and along the NW ridge direction. Electrical transport properties of the InAs NWs were investigated using Hall bars, a field effect mobility device, a quantum dot, and an Aharonov-Bohm loop device, which reflect the strong spin-orbit interaction and phase-coherent transport characteristic present in the selectively grown InAs systems. This study demonstrates that selective-area chemical beam epitaxy is a scalable approach to realize semiconductor 1D channel networks with the excellent surface selectivity and this material system is suitable for quantum transport studies.

关键词： Crystal growth Electrical properties Mesoscopics Structural properties Topological quantum computing III-V semiconductors Nanowires Chemical beam epitaxy Scanning electron microscopy Transmission electron microscopy Transport techniques

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Practical quantum random-number generation based on sampling vacuum fluctuations

Quantum Engineering

引用

quantum engineering 2019年第1期1卷

作者： Zhou, Qiang Valivarthi, Raju John, Caleb Tittel, Wolfgang Institute for Quantum Science and Technology University of Calgary Calgary Canada Department of Physics and Astronomy University of Calgary Calgary Canada Institute of Fundamental and Frontier Science University of Electronic Science and Technology of China Chengdu China School of Optoelectronic Science and Engineering University of Electronic Science and Technology of China Chengdu China ICFO—The Institute of Photonic Sciences Barcelona Spain Department of Electrical and Computer Engineering University of Calgary Calgary Canada QuTech and Kavli Institute of Nanoscience Delft University of Technology Delft Netherlands

Random-number generation is an enabling technology for fields as varied as Monte Carlo simulations and quantum information science, particularly secure quantum key distribution. Here, we propose and demonstrate an approach to random-number generation that satisfies the specific requirements for quantum key distribution. In our scheme, vacuum fluctuations of the electromagnetic field inside a laser cavity are sampled in a discrete manner in time and amplified by injecting current pulses into the laser. Random numbers can be obtained by interfering the laser pulses with another independent laser operating at the same frequency. Using only off-the-shelf optoelectronics and fiber-optic components at a 1.5-μm wavelength, we experimentally demonstrate the generation of high-quality random bits at a rate of up to 1.5 GHz. Our results show the potential of the new scheme for practical information-processing applications. © 2019 John Wiley & Sons, Ltd.

关键词： Random number generation

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Ballistic superconductivity and tunable π-junctions in InSb quantum wells

arXiv

引用

arXiv 2019年

作者： Ke, Chung Ting Moehle, Christian M. de Vries, Folkert K. Thomas, Candice Metti, Sara Guinn, Charles R. Kallaher, Ray Lodari, Mario Scappucci, Giordano Wang, Tiantian Diaz, Rosa E. Gardner, Geoffrey C. Manfra, Michael J. Goswami, Srijit QuTech and Kavli Institute of Nanoscience Delft University of Technology Delft2600 GA Netherlands Department of Physics and Astronomy Purdue University West LafayetteIN47907 United States Birck Nanotechnology Center Purdue University West LafayetteIN47907 United States School of Electrical and Computer Engineering Purdue University West LafayetteIN47907 United States Microsoft Quantum at Station Q Purdue Purdue University West LafayetteIN47907 United States School of Materials Engineering Purdue University West LafayetteIN47907 United States

Two-dimensional electron gases (2DEGs) coupled to superconductors offer the opportunity to explore a variety of quantum phenomena. These include the study of novel Josephson effects1, superconducting correlations in quantum (spin) Hall systems2-7, hybrid superconducting qubits8,9 and emergent topological states in semiconductors with spin-orbit interaction (SOI)10-13. InSb is a well-known example of such a strong SOI semiconductor, however hybrid superconducting devices in InSb quantum wells remain unexplored. Here, we interface InSb 2DEGs with a superconductor (NbTiN) to create Josephson junctions (JJs), thus providing the first evidence of induced superconductivity in high quality InSb quantum wells. The JJs support supercurrent transport over several microns and display clear signatures of ballistic superconductivity. Furthermore, we exploit the large Landé g-factor and gate tunability of the junctions to control the current-phase relation, and drive transitions between the 0 and π-states. This control over the free energy landscape allows us to construct a phase diagram identifying these 0 and π-regions, in agreement with theory. Our results establish InSb quantum wells as a promising new material platform to study the interplay between superconductivity, SOI and magnetism. Copyright © 2019, The Authors. All rights reserved.

关键词： Indium antimonides

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Stable quantum dots in an InSb two-dimensional electron gas

arXiv

引用

arXiv 2019年

作者： Kulesh, Ivan Ke, Chung Ting Thomas, Candice Karwal, Saurabh Moehle, Christian M. Metti, Sara Kallaher, Ray Gardner, Geoffrey C. Manfra, Michael J. Goswami, Srijit QuTech and Kavli Institute of Nanoscience Delft University of Technology Delft2600 GA Netherlands Department of Physics and Astronomy Purdue University West LafayetteIN47907 United States Birck Nanotechnology Center Purdue University West LafayetteIN47907 United States Delft2628 CK Netherlands School of Electrical and Computer Engineering Purdue University West LafayetteIN47907 United States Microsoft Quantum Purdue Purdue University West LafayetteIN47907 United States School of Materials Engineering Purdue University West LafayetteIN47907 United States

Indium antimonide (InSb) two-dimensional electron gases (2DEGs) have a unique combination of material properties: high electron mobility, strong spin-orbit interaction, large Landé g-factor, and small effective mass. This makes them an attractive platform to explore a variety of mesoscopic phenomena ranging from spintronics to topological superconductivity. However, there exist limited studies of quantum confined systems in these 2DEGs, often attributed to charge instabilities and gate drifts. We overcome this by removing the δ-doping layer from the heterostructure, and induce carriers electrostatically. This allows us to perform the first detailed study of stable gate-defined quantum dots in InSb 2DEGs. We demonstrate two distinct strategies for carrier confinement and study the charge stability of the dots. The small effective mass results in a relatively large single particle spacing, allowing for the observation of an even-odd variation in the addition energy. By tracking the Coulomb oscillations in a parallel magnetic field we determine the ground state spin configuration and show that the large g-factor (∼30) results in a singlet-triplet transition at magnetic fields as low as 0.3 T. Copyright © 2019, The Authors. All rights reserved.

关键词： Nanocrystals

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