作者：
KING, JFBARTON, DEJ. Fred King:is the manager of the Advanced Technology Department for Unisys in Reston
Virginia. He earned his Ph.D. in mathematics from the University of Houston in 1977. He has been principal investigator of research projects in knowledge engineering pattern recognition and heuristic problem-solving. Efforts include the development of a multi-temporal multispectral classifier for identifying graincrops using LANDSAT satellite imagery data for NASA. Also as a member of the research team for a NCI study with Baylor College of Medicine and NASA he helped develop techniques for detection of carcinoma using multispectral microphotometer scans of lung tissue. He established and became technical director of the AI Laboratory for Ford Aerospace where he developed expert scheduling modeling and knowledge acquisition systems for NASA. Since joining Unisys in 1985 he has led the development of object-oriented programming environments blackboard architectures data fusion techniques using neural networks and intelligent data base systems. Douglas E. Barton:is manager of Logistics Information Systems for Unisys in Reston
Virginia. He earned his B.A. degree in computer science from the College of William and Mary in 1978 and did postgraduate work in London as a Drapers Company scholar. Since joining Unisys in 1981 his work has concentrated on program management and software engineering of large scale data base management systems and design and implementation of knowledge-based systems in planning and logistics. As chairman of the Logistics Data Subcommittee of the National Security Industrial Association (NSIA) he led an industry initiative which examined concepts in knowledge-based systems in military logistics. His responsibilities also include evaluation development and tailoring of software engineering standards and procedures for data base and knowledge-based systems. He is currently program manager of the Navigation Information Management System which provides support to the Fleet Ballistic Missile Progr
A valuable technique during concept development is rapid prototyping of software for key design components. This approach is particularly useful when the optimum design approach is not readily apparent or several know...
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A valuable technique during concept development is rapid prototyping of software for key design components. This approach is particularly useful when the optimum design approach is not readily apparent or several known alternatives need to be rapidly evaluated. A problem inherent in rapid prototyping is the lack of a "target system" with which to interface. Some alternatives are to develop test driver libraries, integrate the prototype with an existing working simulator, or build one for the specific problem. This paper presents a unique approach to concept development using rapid prototyping for concept development and scenario-based simulation for concept verification. The rapid prototyping environment, derived from artificial intelligence technology, is based on a blackboard architecture. The rapid prototype simulation capability is provided through an object-oriented modeling environment. It is shown how both simulation and blackboard technologies are used collectively to rapidly gain insight into a tenacious problem. A specific example will be discussed where this approach was used to evolve the logic of a mission controller for an autonomous underwater vehicle.
The effects of light irradiation of a He-Cd laser (441.6 nm) on MBE growth of ZnS x Se 1− x ( x =0−0.13) were studied. The growth rates of the epilayers were reduced and the photo-desorption rate constanSts of Zn, Se ...
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The effects of light irradiation of a He-Cd laser (441.6 nm) on MBE growth of ZnS x Se 1− x ( x =0−0.13) were studied. The growth rates of the epilayers were reduced and the photo-desorption rate constanSts of Zn, Se and S were obtained. In the photoluminescence spectra at 11 K, the intensities of the free exciton emission increased, and thus the crystallinity of the epilayers was found to be improved. The behavior of surface adatoms on the growing surface under laser irradiation is discussed.
An optimum composition x of MBE-ZnS x Se 1− x /GaAs has been studied by surface morphology, X-ray diffraction and fluorescence microscopic study to obtain epilayers with the best quality. The epilayers with a lattice-...
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An optimum composition x of MBE-ZnS x Se 1− x /GaAs has been studied by surface morphology, X-ray diffraction and fluorescence microscopic study to obtain epilayers with the best quality. The epilayers with a lattice-matching composition at the growth temperature ( x gt =0.083) had extremely smooth surfaces and the minimum FWHM of X-ray rocking curves in spite of thermal strain. Also, the orange emission due to Ga diffusion from the substrate was not observed at the epilayer-substrate interface in these epilayers. The epilayers with the best quality were grown with the composition of x gt .
ZnSe epilayers have been successfully grown at a low temperature of 150°C for the first time by photoassisted molecular beam epitaxy. A He-Cd laser (441.6 nm) with an intensity of about 300 mW/cm2 was used as a l...
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ZnSe epilayers have been successfully grown at a low temperature of 150°C for the first time by photoassisted molecular beam epitaxy. A He-Cd laser (441.6 nm) with an intensity of about 300 mW/cm2 was used as a light source. The free-exciton line in photoluminescence spectra at 11 K was sharp and strong, comparable with that of unirradiated epilayers grown at 340°C which is the optimum growth temperature without irradiation.
Nitrogen-doped ZnSe and lattice-matched ZnSSe were grown on GaAs substrates by MBE using NH3 gas as a dopant source. The epilayers were characterized by photoluminescence. ZnSe was rather easily doped, and samples in ...
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Nitrogen-doped ZnSe and lattice-matched ZnSSe were grown on GaAs substrates by MBE using NH3 gas as a dopant source. The epilayers were characterized by photoluminescence. ZnSe was rather easily doped, and samples in which the acceptor-bound exciton line was a major line in the exciton emission region at 11 K were obtained. ZnSSe was less readily doped with nitrogen at the same NH3 effective pressure. However, the free-to-acceptor omission at 60 K was stronger in ZnSSe than in ZnSe, due to the effect of lattice matching.
ZnSSe epilayers were grown by MBE with light irradiation using a Hg-Xe lamp. The free-exciton-emission intensities increased in the photoluminescence spectra of the light-irradiated epilayers, and the sulfur compositi...
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ZnSSe epilayers were grown by MBE with light irradiation using a Hg-Xe lamp. The free-exciton-emission intensities increased in the photoluminescence spectra of the light-irradiated epilayers, and the sulfur composition also increased. However, the surface morphologies were rough. The irradiated-photon-energy dependence of the above irradiation effects was investigated for the first time, and it turned out that the photons of energy larger than the band-gap energy of the epilayer were responsible for the light-irradiation effects.
Al2O3 thin films have been prepared by photo-CVD under oxygen atmosphere for the first time using aluminum-tri-isopropoxide as a source material. The light source was a low-pressure Hg lamp. Without UV irradiation the...
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Al2O3 thin films have been prepared by photo-CVD under oxygen atmosphere for the first time using aluminum-tri-isopropoxide as a source material. The light source was a low-pressure Hg lamp. Without UV irradiation the deposition rate had a maximum at a particular oxygen-flow rate, which suggests the Langmuir-Hinshelwood surface-reaction mechanism. With UV irradiation, the deposition rate increased largely at a substrate temperature of less than 300°C. The activation energy of deposition reaction was as small as 1.5 kcal/mol. It was confirmed that the 185-nm light played an important role in the photodeposition. The dielectric dissipation factor ( tan δ) decreased in the samples prepared by photo-CVD, especially at a low substrate temperature of less than 300°C; that is, the film quality was improved by photo-CVD.
Basic research for the micro actuator using TiNi Shape Memory Alloy (SMA) is conducted from the crystallographic point of view. SMA (TiNi) thin film is fabricated by sputtering deposition. First, the influence of subs...
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作者：
Suzuki, HiroshiKyushu Institute of Technology
The Faculty of Information Science & Engineering The Department of Mechanical System Engineering 680-4 Kawatsu Fukuoka Iizuka820 Japan
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