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Two-dimensional materials for future information technology: status and prospects

Science China(Information Sciences) 2024年第6期67卷 1-147页

作者： Hao QIU Zhihao YU Tiange ZHAO Qi ZHANG Mingsheng XU Peifeng LI Taotao LI Wenzhong BAO Yang CHAI Shula CHEN Yiqi CHEN Hui-Ming CHENG Daoxin DAI Zengfeng DI Zhuo DONG Xidong DUAN Yuhan FENG Yu FU Jingshu GUO Pengwen GUO Yue HAO Jun HE Xiao HE Jingyi HU Weida HU Zehua HU Xinyue HUANG Ziyang HUANG Ali IMRAN Ziqiang KONG Jia LI Qian LI Weisheng LI Lei LIAO Bilu LIU Can LIU Chunsen LIU Guanyu LIU Kaihui LIU Liwei LIU Sheng LIU Yuan LIU Donglin LU Likuan MA Feng MIAO Zhenhua NI Jing NING Anlian PAN Tian-Ling REN Haowen SHU Litao SUN Yue SUN Quanyang TAO Zi-Ao TIAN Dong WANG Hao WANG Haomin WANG Jialong WANG Junyong WANG Wenhui WANG Xingjun WANG Yeliang WANG Yuwei WANG Zhenyu WANG Yao WE... Department of Applied Physics The Hong Kong Polytechnic University Key Laboratory for Micro-Nano Physics and Technology of Hunan Province College of Materials Science and EngineeringHunan University College of Integrated Circuits Zhejiang University Shenzhen Geim Graphene Center Shenzhen Key Laboratory of Layered Materials for Value-Added ApplicationsTsinghua-Berkeley Shenzhen Institute & Institute of Materials ResearchTsinghua Shenzhen International Graduate SchoolTsinghua University State Key Laboratory of Extreme Photonics and Instrumentation College of Optical Science and EngineeringInternational Research Center for Advanced PhotonicsZijingang CampusZhejiang University National Key Laboratory of Materials for Integrated Circuits Shanghai Institute of Microsystem and Information TechnologyChinese Academy of Sciences CAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applications i-LabSuzhou Institute of Nano-Tech and Nano-Bionics (SINANO)Chinese Academy of Sciences College of Chemistry and Chemical Engineering Hunan University Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education) Department of PhysicsRenmin University of China School of Integrated Circuits Beijing National Research Center for Information Science and Technology (BNRist)Tsinghua University School of Electronic Science and Engineering Nanjing University The State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology Shaanxi Joint Key Laboratory of GrapheneSchool of MicroelectronicsXidian University Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education School of Physics and TechnologyWuhan University School of Integrated Circuits Huazhong University of Science and Technology Center for Nanochemistry (CNC) Beijing Science and Engineering Center for NanocarbonsBeijing National Laboratory for Molecular SciencesCollege of Chemistry and Molecular EngineeringPeking University State Key Laboratory for Artificial Microstruct

Over the past 70 years, the semiconductor industry has undergone transformative changes,largely driven by the miniaturization of devices and the integration of innovative structures and materials. Two-dimensional(2D) materials like transition metal dichalcogenides(TMDs) and graphene are pivotal in overcoming the limitations of silicon-based technologies, offering innovative approaches in transistor design and functionality, enabling atomic-thin channel transistors and monolithic 3D integration. We review the important progress in the application of 2D materials in future information technology, focusing in particular on microelectronics and optoelectronics. We comprehensively summarize the key advancements across material production, characterization metrology, electronic devices, optoelectronic devices, and heterogeneous integration on silicon. A strategic roadmap and key challenges for the transition of 2D materials from basic research to industrial development are outlined. To facilitate such a transition, key technologies and tools dedicated to 2D materials must be developed to meet industrial standards, and the employment of AI in material growth, characterizations, and circuit design will be essential. It is time for academia to actively engage with industry to drive the next 10 years of 2D material research.

关键词： two-dimensional (2D) materials information technology production technology standardization of characterization microelectronicdevices optoelectronic devices multi-functional integration

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Optical Interconnects using Single-Mode and Multi-Mode VCSEL and Multi-Mode Fiber

Optical Interconnects using Single-Mode and Multi-Mode VCSEL...

引用

2020 Optical Fiber Communications Conference and Exhibition, OFC 2020

作者： Ledentsov, N.N. Shchukin, V.A. Kalosha, V.P. Ledentsov, N. Chorchos, L. Turkiewicz, J.P. Hecht, U. Kurth, P. Gerfers, F. Lavrencik, J. Varughese, S. Ralph, S.E. VI Systems GmbH Hardenbergstr. 7 Berlin10623 Germany Warsaw University of Technology Nowowiejska 15/19 Warsaw00-661 Poland Mixed Signal Circuit Design Technische Universitat Berlin Einsteinufer 17 Berlin10587 Germany Department of Electrical and Computer Engineering Georgia Institute of Technology AtlantaGA30332 United States

Single mode (SM) VCSELs, produced in industrial 4' technology, are suitable for 100Gb/s PAM2 and >160Gb/s PAM4 data transmission. >107Gb/s transmission over 1km of multimode (MM) fiber at 850nm and 910nm is ... 详细信息

ISBN: (纸本)9781943580712

关键词： Multimode fibers

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Optical interconnects using single-mode and multi-mode VCSEL and multi-mode fiber

Optical interconnects using single-mode and multi-mode VCSEL...

引用

Optical Fiber Communication Conference, OFC 2020

作者： Ledentsov, N.N. Shchukin, V.A. Kalosha, V.P. Ledentsov, N. Chorchos, L. Turkiewicz, J.P. Hecht, U. Kurth, P. Gerfers, F. Lavrencik, J. Varughese, S. Ralph, S.E. VI Systems GmbH Hardenbergstr. 7 Berlin10623 Germany Warsaw University of Technology Nowowiejska 15/19 Warsaw00-661 Poland Mixed Signal Circuit Design Technische Universität Berlin Einsteinufer 17 Berlin10587 Germany Department of Electrical and Computer Engineering Georgia Institute of Technology AtlantaGA30332 United States

Single mode (SM) VCSELs, produced in industrial 4" technology, are suitable for 100Gb/s PAM2 and >160Gb/s PAM4 data transmission. >107Gb/s transmission over 1km of multimode (MM) fiber at 850nm and 910nm is... 详细信息

ISBN: (纸本)9781943580712

关键词： Multimode fibers

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Plasmon hybridization induced by quasi bound state in the continuum of graphene metasurfaces oriented for high-accuracy polarization-insensitive two-dimensional sensors

引用

Chinese Optics Letters 2022年第4期20卷 65-70页

作者： Xiuyu Wang Jihong Xin Qun Ren Haocheng Cai Jiaqi Han Chengyi Tian Pengcheng Zhang Lijie Jiang Zhihao Lan Jianwei You Wei E.I.Sha Tianjin Key Laboratory of Imaging and Sensing Microelectronic Technology School of MicroelectronicsTianjin UniversityTianjin 300072China School of Electrical and Information Engineering Tianjin UniversityTianjin 300072China State Key Laboratory of Millimeter Waves School of Information Science and EngineeringSoutheast UniversityNanjing 210096China Key Laboratory of High Speed Circuit Design and EMC of Ministry of Education School of Electronic EngineeringXidian UniversityXi'an 710071China Huawei Technologies Company Ltd. Shanghai 518129China Department of Electronic and Electrical Engineering University College LondonLondon WC1E7JEUK Key Laboratory of Micro-Nano Electronic Devices and Smart Systems of Zhejiang Province College of Information Science and Electronic EngineeringZhejiang UniversityHangzhou 310027China

Plasmonics could provide compact and powerful solutions for manipulating light in deep-subwavelength dimensions,which is promising for a great range of nanophotonic technologies such as plasmonic rulers and ***,the effective area of enhanced localized field induced by surface plasmon polaritons is typically restricted to the structural *** this work,we propose a method to generate high quality-factor extended electromagnetic fields via hybridizing the superradiant state and the quasi bound state in the continuum of graphene *** coupling interaction involved operates as a three-level system with multiple sharp resonances immune to the polarization,which holds great promise for developing nanodevices with high sensing capacity in two dimensions.

关键词： plasmon hybridization quasi bound state in the continuum high-Q sensing

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Power inversion of the massive MIMO channel

arXiv

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arXiv 2019年

作者： Abraham, Jens Ekman, Torbjörn Circuit and Radio Systems Group Department of Electronic Systems Norwegian University of Science and Technology Trondheim Norway

Channel hardening characterises the diminishing influence of small scale fading on large scale antenna systems. The effective massive MIMO time domain channel is introduced and applied to a maximum diversity channel with rectangular power delay profile. This model bounds channel hardening and allows a proper interpretation from a radio design perspective. The reduced variability of the effective channel enables power inversion to obtain a downlink channel that only depends on the large scale fading properties. Copyright © 2019, The Authors. All rights reserved.

关键词： Hardening

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Optical Interconnects using Single-Mode and Multi-Mode VCSEL and Multi-Mode Fiber

Optical Interconnects using Single-Mode and Multi-Mode VCSEL...

引用

Optical Fiber Communication (OFC) Conference

作者： N. N. Ledentsov V. A. Shchukin V. P. Kalosha N. Ledentsov L. Chorchos J. P. Turkiewicz U. Hecht P. Kurth F. Gerfers J. Lavrencik S. Varughese S. E. Ralph VI Systems GmbH Berlin Germany Warsaw University of Technology Warsaw Poland Mixed Signal Circuit Design Technische Universität Berlin Berlin Germany Department of Electrical and Computer Engineering Georgia Institute of Technology Atlanta GA USA

Single mode (SM) VCSELs, produced in industrial 4” technology, are suitable for 100Gb/s PAM2 and >160Gb/s PAM4 data transmission. >107Gb/s transmission over 1km of multimode (MM) fiber at 850nm and 910nm is rea... 详细信息

ISBN: (数字)9781943580712

ISBN: (纸本)9781728167626

关键词： Bragg reflectors Multimode fibers Optical amplifiers Optical feedback Optical interconnects Vertical cavity surface emitting lasers

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Ferroelectric materials, devices, and chips technologies for advanced computing and memory applications: development and challenges

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Science China(Information Sciences) 2025年第6期68卷 118-173页

作者： Xiao YU Ni ZHONG Yan CHENG Tianjiao XIN Qing LUO Tiancheng GONG Jiezhi CHEN Jixuan WU Ran CHENG Zhiyuan FU Kechao TANG Jin LUO Tianling REN Fei XUE Lin CHEN Tianyu WANG Xueqing LI Xiuyan LI Ping WANG Xinqiang WANG Jie SUN Anquan JIANG Peiyuan DU Bing CHEN Chengji JIN Jiajia CHEN Haoji QIAN Wei MAO Siying ZHENG Huan LIU Haiwen XU Can LIU Zhihao SHEN Xiaoxi LI Bochang LI Zheng-Dong LUO Jiuren ZHOU Yan LIU Yue HAO Genquan HAN Hangzhou Institute of Technology Xidian University Faculty of Integrated Circuits Xidian University Key Laboratory of Polar Materials and Devices(MOE) Department of Electronics East China Normal University State Key Lab of Fabrication Technologies for Integrated Circuits Institute of Microelectronics of Chinese Academy of Sciences School of Information Science and Engineering Shandong University College of Integrated Circuit Zhejiang University School of Integrated Circuits Southeast University School of Integrated Circuits Peking University School of Integrated Circuits Tsinghua University Center for Quantum Matter School of Physics Zhejiang University School of Microelectronics State Key Laboratory of Integrated Chips and Systems Fudan University Department of Electronic Engineering Tsinghua University National Key Laboratory of Micro and Nano Fabrication Technology and the Department of Micro-Nano Electronics Shanghai Jiao Tong University State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-Optoelectronics School of Physics Peking University Hangzhou Huarui Chip Innovation Technology Co. Ltd.

Hafnium（Hf） oxide-based ferroelectric materials have emerged as a transformative platform for next-generation non-volatile memory and advanced computing technologies. This review comprehensively examines the development, challenges, and applications of HfO2ferroelectrics, emphasizing their CMOS compatibility, scalability, and robust polarization at nanoscale dimensions. Breakthroughs in doping strategies, stress engineering, and VO control have stabilized the metastable orthorhombic phase, enabling high-performance devices such as ferroelectric RAM（FeRAM）, ferroelectric field-effect transistors（FeFETs）, and ferroelectric tunnel junctions（FTJs）. These devices offer ultrafast switching, low power consumption, and multi-level storage, driving innovations in neuromorphic computing, in-memory processing, and cryogenic systems; nonetheless, they face ongoing challenges in reliability, such as fatigue and imprint effects, and scalability at sub-5 nm technology nodes. Emerging frontiers, such as wurtzite-structured nitrides（e.g., AlScN） and antiferroelectric ZrO2-based systems, have garnered significant attention due to their exceptionally high remanent polarization and promising potential for enhanced endurance, respectively. Further addressing the reliability issues of these emerging ferroelectric materials and the challenges associated with large-scale integration processes through interdisciplinary efforts will unlock the full potential of ferroelectric technologies, positioning them as pivotal enablers of post-Moore computing architectures and sustainable AI-driven applications.

关键词： ferroelectric HfO$_{2}$ zirconium oxide ZrO$_{2}$ wurtzite AlScN FeRAM FeFET

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Corrigendum: "Analysis of hot carrier instability in a floating body cell" [Jpn. J. Appl. Phys. 63, 094002 (2024)]

引用

Japanese Journal of Applied Physics 2024年第11期63卷 119301-119301页

作者： Hiroomi Nakajima Tomoaki Shino Hironobu Furuhashi Jun Nishimura Tomoki Higashi Katsuyuki Fujita Kosuke Hatsuda Ryo Fukuda Takeshi Kajiyama Memory Development Strategy Group2 Memory Development Strategy Division KIOXIA Corporation 2-5-1 Kasama Sakae-ku Yokohama Kanagawa-Pref. 247-8585 Japan File Memory Device Peripheral Element Development Group File Memory Device Engineering Department KIOXIA Corporation 2-5-1 Kasama Sakae-ku Yokohama Kanagawa Pref. 247-8585 Japan Advanced Memory Development Center KIOXIA Corporation 800 Yamanoissiki-Cho Yokkaichi Mie-Pref. 510-0906 Japan Memory Device Engineering Department KIOXIA Systems Corporation 2-5-1 Kasama Sakae-ku Yokohama Kanagawa-Pref. 247-8585 Japan Circuit Technology Research Department AI & System Research Center Frontier Technology R&D Institute KIOXIA Corporation 2-5-1 Kasama Sakae-ku Yokohama Kanagawa Pref. 247-8585 Japan Memory Design Group 4 Memory Design Department 2 Memory Design Managing Department KIOXIA Corporation 2-5-1 Kasama Sakae-ku Yokohama Kanagawa Pref. 247-8585 Japan

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Asian diversity in human immune cells

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Cell 2025年第8期188卷 2288-2306.e24页

作者： Kock, Kian Hong Tan, Le Min Han, Kyung Yeon Ando, Yoshinari Jevapatarakul, Damita Chatterjee, Ankita Lin, Quy Xiao Xuan Buyamin, Eliora Violain Sonthalia, Radhika Rajagopalan, Deepa Tomofuji, Yoshihiko Sankaran, Shvetha Park, Mi-So Abe, Mai Chantaraamporn, Juthamard Furukawa, Seiko Ghosh, Supratim Inoue, Gyo Kojima, Miki Kouno, Tsukasa Lim, Jinyeong Myouzen, Keiko Nguantad, Sarintip Oh, Jin-Mi Rayan, Nirmala Arul Sarkar, Sumanta Suzuki, Akari Thungsatianpun, Narita Venkatesh, Prasanna Nori Moody, Jonathan Nakano, Masahiro Chen, Ziyue Tian, Chi Zhang, Yuntian Tong, Yihan Tan, Crystal T.Y. Tizazu, Anteneh Mehari Loh, Marie Hwang, You Yi Ho, Roger C. Larbi, Anis Ng, Tze Pin Won, Hong-Hee Wright, Fred A. Villani, Alexandra-Chloé Park, Jong-Eun Choi, Murim Liu, Boxiang Maitra, Arindam Pithukpakorn, Manop Suktitipat, Bhoom Ishigaki, Kazuyoshi Okada, Yukinori Yamamoto, Kazuhiko Carninci, Piero Chambers, John C. Hon, Chung-Chau Matangkasombut, Ponpan Charoensawan, Varodom Majumder, Partha P. Shin, Jay W. Park, Woong-Yang Prabhakar, Shyam Genome Institute of Singapore (GIS) Agency for Science STAR) 60 Biopolis Street Genome Singapore 138672 Singapore Samsung Genome Institute Samsung Medical Center Seoul 06351 South Korea Laboratory for Advanced Genomics Circuit RIKEN Center for Integrative Medical Sciences (IMS) 1-7-22 Suehiro-cho Tsurumi-ku Kanagawa Yokohama 230-0045 Japan Laboratory for Transcriptome Technology RIKEN Center for IMS 1-7-22 Suehiro-cho Tsurumi-ku Kanagawa Yokohama 230-0045 Japan Single-cell omics and Systems Biology of Diseases (scSyBiD) Research Unit Faculty of Science Mahidol University Bangkok 10400 Thailand Department of Microbiology Faculty of Science Mahidol University Bangkok 10400 Thailand John C. Martin Centre for Liver Research and Innovations Sonarpur Kolkata 700150 India Laboratory for Systems Genetics RIKEN Center for IMS 1-7-22 Suehiro-cho Tsurumi-ku Kanagawa Yokohama 230-0045 Japan Department of Statistical Genetics of Medicine Osaka University 2-2 Yamadaoka Osaka Suita 565-0871 Japan Integrated Frontier Research for Medical Science Division Institute for Open and Transdisciplinary Research Initiatives Osaka University 2-2 Yamadaoka Osaka Suita 565-0871 Japan Samsung Advanced Institute for Health Sciences & Technology Sungkyunkwan University Seoul 06351 South Korea Laboratory for Autoimmune Diseases RIKEN Center for IMS 1-7-22 Suehiro-cho Tsurumi-ku Kanagawa Yokohama 230-0045 Japan Department of Biochemistry Faculty of Science Mahidol University Bangkok 10400 Thailand Integrative Computational BioScience Center Mahidol University Nakhon Pathom 73170 Thailand Biotechnology Research and Innovation Council National Institute of Biomedical Genomics West Bengal Kalyani 741251 India Laboratory for Genome Information Analysis RIKEN Center for IMS 1-7-22 Suehiro-cho Tsurumi-ku Kanagawa Yokohama 230-0045 Japan Department of Allergy and Rheumatology of Medicine The University of Tokyo 7-3-1 Hongo Bunkyo-ku Tokyo 113-8654 Japan D

The relationships of human diversity with biomedical phenotypes are pervasive yet remain understudied, particularly in a single-cell genomics context. Here, we present the Asian Immune Diversity Atlas (AIDA), a multi-national single-cell RNA sequencing (scRNA-seq) healthy reference atlas of human immune cells. AIDA comprises 1,265,624 circulating immune cells from 619 donors, spanning 7 population groups across 5 Asian countries, and 6 controls. Though population groups are frequently compared at the continental level, we found that sub-continental diversity, age, and sex pervasively impacted cellular and molecular properties of immune cells. These included differential abundance of cell neighborhoods as well as cell populations and genes relevant to disease risk, pathogenesis, and diagnostics. We discovered functional genetic variants influencing cell-type-specific gene expression, which were under-represented in non-Asian populations, and helped contextualize disease-associated variants. AIDA enables analyses of multi-ancestry disease datasets and facilitates the development of precision medicine efforts in Asia and beyond. © 2025 The Authors

关键词： eQTL genetic diversity genetics genomics healthy baseline human diversity immune cells precision medicine single-cell RNA sequencing sub-continental diversity

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Transceive phase corrected contrast source inversion-electrical properties tomography

arXiv

引用

arXiv 2019年

作者： Stijnman, Peter R.S. Mandija, Stefano Fuchs, Patrick S. van den Berg, Cornelis A.T. Remis, Rob F. Computational Imaging Group for MRI diagnostics and therapy Centre for Image Sciences University Medical Center Utrecht Department of Biomedical Engineering Eindhoven University of Technology Eindhoven Computational Imaging Group for MRI diagnostics and therapy Centre for Image Sciences University Medical Center Utrecht Circuit & Systems Group of the Electrical Engineering Mathematics and Computer Science Faculty of the Delft University of Technology

Magnetic resonance imaging (MRI) based electrical properties tomography (EPT) is the quantification of the conductivity and permittivity of different tissues. These electrical properties can be obtained through different reconstruction methods and can be used as a contrast mechanism. The work presented here continues from the two-dimensional CSI-EPT algorithm which was shown to work with two-dimensional Matlab based simulations. The existing CSI-EPT algorithm is reformulated to use the transceive phase rather than relying on the transceive phase assumption. This is achieved by implementing a forward problem, computing the receive phase, into the inverse minimization problem, i.e. retrieving the electrical properties. Furthermore, the radio frequency (RF) shield is numerically implemented to model the RF fields inside the MRI more accurately. Afterwards, the algorithm is tested with three-dimensional FDTD simulations to investigate if the two-dimensional CSI-EPT can retrieve the electrical properties for three-dimensional RF fields. Finally, an MR experiment with a phantom is performed to show the potential for this method. From the results of the two-dimensional Matlab simulations it is seen that CSI-EPT can reconstruct the electrical properties using MRI accessible quantities. In the three-dimensional simulations it is observed that the electrical properties are underestimated, nonetheless, CSI-EPT is more precise than the standard Helmholtz based methods. Finally, the first CSI-EPT results using measured data are shown. The results for the reconstruction using measured data were of the same quality as the results from the FDTD simulation. Copyright © 2019, The Authors. All rights reserved.

关键词： Magnetic resonance imaging

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