A new type of crystal seed, polycrystalline Ge (poly-Ge) formed by Co induced crystallization was used in the rapid-melting-growth (RMG) of Ge. With the poly-Ge seed, the grain size of Ge films obtained was significan...
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Substrate current (Isub) in poly-Si thin film transistors (TFTs) is first investigated by considering their specific substrate contact configuration. When the substrate bias is very small, Isub is driven by the recomb...
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Degradation of n-type poly-Si TFTs under drain pulse stress is investigated. It is first found that under fixed drain pulse stress on-state current degradation is gradually enhanced with DC gate bias varying from posi...
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Degradation of p-channel poly-Si thin-film transistors (TFTs) under dynamic negative bias temperature (NBT) stress has been investigated. Two-stage degradation behavior is first observed. In the first stage, significa...
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A new method for extraction of series resistance is proposed for poly-Si thin-film transistors. In this method, the extraction procedure is insensitive to the variation in effective channel length and device mobility,...
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A new type of polycrystalline silicon (poly-Si) thin-film transistors (TFTs) with self-aligned metal electrodes (SAME) is systematically characterized. New device features different from conventional poly-Si TFTs are ...
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This paper presents the multi-band inductor with 0.18 μm CMOS technology on plastic achieves high Q-factor and small size for multiband applications. The multi-band inductor on VLSI-standard Si Substrate is operated ...
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作者：
Venter, P.J.De Plessis, M.Dept. of Electrical
Electronic and Computer Engineering Carl and Emily Fuchs Institute for Microelectronics University of Pretoria Corner of University Road and Lynnwood Road Pretoria 0002 South Africa
CMOS is arguably the most successful semiconductor technology in electronics history. This is clear by the constant efforts involved in scaling as the key driver of improving the performance of ICs to keep up with con...
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CMOS is arguably the most successful semiconductor technology in electronics history. This is clear by the constant efforts involved in scaling as the key driver of improving the performance of ICs to keep up with consumer expectations. However, this trend has lately been haltered by another on-chip component: the interconnect. As scaling decreases active device dimensions for a corresponding performance increase, interconnect dimensions suffer under reduction due to increasing capacitance and resistance. One possible solution might be to move the long, power consuming global signal nets into the optical domain. This paper compares predicted electrical versus optical global signal distribution for future nanometre CMOS nodes, based on clock distribution and the associated power consumption.
作者：
Bogalecki, A.W.Du Plessis, M.Dept. of Electrical
Electronic and Computer Engineering Carl and Emily Fuchs Institute for Microelectronics University of Pretoria Corner of University Road and Lynnwood Road Pretoria 0002 South Africa
To investigate quantum confinement effects on silicon (Si) light source electroluminescence (EL), nanometre-scale Si finger junctions were manufactured in a fully customized silicon-on-insulator (SOI) production techn...
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To investigate quantum confinement effects on silicon (Si) light source electroluminescence (EL), nanometre-scale Si finger junctions were manufactured in a fully customized silicon-on-insulator (SOI) production technology. The wafers were manufactured in the cleanroom using an electron-beam pattern generator (EPG). The SOI light source with the highest irradiance emitted about 9 times more optical power around λ = 850 nm than a 0.35 μm bulk-CMOS avalanche light-source operating at the same current. It is shown that the buried oxide (BOX) layer in a SOI process could be used to reflect about 25 % of otherwise lost downward-radiated light back up to increase the external power efficiency of SOI light sources.
Emerging electric-drive vehicles demonstrate the potential for significant reduction of petroleum consumption and green- house gas emissions. Existing electric-drive vehicles typi- cally include a battery system consi...
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ISBN:
(纸本)9781450301466
Emerging electric-drive vehicles demonstrate the potential for significant reduction of petroleum consumption and green- house gas emissions. Existing electric-drive vehicles typi- cally include a battery system consisting of thousands of Lithium-ion battery cells. Therefore, large-scale battery- system modeling and analysis is essential for battery sys- tem performance analysis, next-generation battery system design, and transportation electrification. This paper presents a modeling and analysis framework for large-scale Lithium-ion battery systems. The proposed solution models major run-time and long-term battery ef- fects, and uses fast frequency-domain analysis techniques. It enables efficient and accurate characterization of large- scale battery system run-time charge-cycle energy efficiency and long-term cycle life. Our solution is validated against physical measurements using real-world user driving studies. Copyright 2010 ACM.
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