检索结果-内蒙古大学图书馆

Sharp absorption and high temperature thermal emission from simple metallic photonic crystals

MRS Online Proceedings Library 2009年第1期1162卷 1-6页

作者： Rana Biswas Dayu Zhou Irina Puscasu Edward Johnson Andrew Taylor Weijun Zhao Depts. of Physics & Astronomy Ames Laboratory Microelectronics Research Center Electrical & Computer Engineering Iowa State University Ames USA Dept. of Electrical & Computer Engineering Microelectronics Research Center Iowa State University Ames USA ICX Photonics Billerica USA

We design and fabricate metallic photonic crystals with sharp absorption peaks in the infrared regime. We have fabricated a metallic photonic crystal consisting of a triangular lattice of holes in a silicon layer conformally coated with gold at a lattice pitch of 3.8 microns. Conventional lithographic and deep reactive ion etching was used. The photonic crystal exhibits a deep reflection minimum and sharp thermal emission peak near the lattice spacing. Measurements agree well with rigorous scattering matrix simulations. This simple single-layer structure with a single patterned exposure has no emission sidebands and can be scaled to other lattice spacings.

关键词： infrared (IR) spectroscopy absorption simulation

来源：评论

学校读者我要写书评

暂无评论

On the thermal activation of negative bias temperature instability

On the thermal activation of negative bias temperature insta...

引用

2009 IEEE International Integrated Reliability Workshop, IIRW 2009

作者： Southwick III, Richard G. Knowlton, William B. Kaczer, Ben Grasser, Tibor Dept. of Electrical and Computer Engineering Boise State University Boise ID 83725 United States Dept. of Materials Science and Engineering Boise State University 1910 University Dr. Boise ID 83725 United States IMEC Kapeldreef 75 L3001 Leuven Belgium Christian Doppler Laboratory for TCAD in Microelectronics Institute for Microelectronics Technische Universität Wien 1040 Wien Austria

ISBN: (纸本)9781424439218

The temperature dependence of negative bias temperature instability (NBTI) is investigated on 2.0nm SiO2 devices from temperatures ranging from 300K down to 6K with a measurement window of ∼12ms to 100s. Results indicate that classic NBTI degradation is observed down to ∼200K and rarely observed at temperatures below 140K in the experimental window. Since experimental results show the charge trapping component contributing to NBTI is thermally activated, the results cannot be explained with the conventionally employed elastic tunneling theory. A new mechanism is observed at temperatures below 200K where device performance during stress conditions improves rather than degrades with time, which is opposite to the "classical" NBTI phenomenon. ©2009 IEEE.

关键词： Negative bias temperature instability

来源：评论

学校读者我要写书评

暂无评论

An experimental 0.6-V 57.5-fJ/conversion-step 250-kS/s 8-bit rail-to-rail successive approximation ADC in 0.18μm CMOS

An experimental 0.6-V 57.5-fJ/conversion-step 250-kS/s 8-bit...

引用

2009 16th IEEE International Conference on Electronics, Circuits and Systems, ICECS 2009

作者： Fayomi, Christian Wirth, Gilson I. Binkley, David Matsuzawa, Akira Microelectronics Laboratory Comp. Sc. Dept UQAM Montreal QC Canada Brazil Department of Electrical and Computer Engineering University of North Carolina Charlotte NC United States Department of Physical Electronics Tokyo Institute of Technology Tokyo Japan

ISBN: (纸本)9781424450916

An experimental 0.6-V 57.5-fJ/conversion-step 250-kS/s 8bit rail-to-rail successive approximation (SA) analog-todigital converter (ADC) implemented in a standard CMOS 0.18 mu;mdigital process is presented. To overcom. The input sampling switches limitation imposed by the low supply voltage we make use of a track-and-hold circuit based on a low-voltage, low-stress and reliable clock signal with a novel rail-to-rail track-and-latch comparator circuit. Power and area saving are achieved using splitarray charge redistribution-based SA ADC. Successive approximation and control logic is implemented using a robust single clock phase D flip-flop. Preliminary simulation results show that the ADC consumes only 3.68 μW. ©2009 IEEE.

关键词： Flip flop circuits

来源：评论

学校读者我要写书评

暂无评论

Analog layout synthesis - Recent advances in topological approaches

Analog layout synthesis - Recent advances in topological app...

引用

2009 Design, Automation and Test in Europe Conference and Exhibition, DATE '09

作者： Graeb, H. Balasa, F. Castro-Lopez, R. Chang, Y.-W. Fernandez, F.V. Lin, P.-H. Strasser, M. Dept. of Computer Science and Information Systems Southern Utah University United States Institute of Microelectronics of Sevilla CSIC University of Sevilla Spain Graduate Institute of Electronics Engineering National Taiwan University Taiwan Institute for EDA Technische Universitaet Muenchen Germany

ISBN: (纸本)9783981080155

This paper gives an overview of some recent advances in topological approaches to analog layout synthesis and in layout-aware analog sizing. The core issue in these approaches is the modeling of layout constraints for an efficient exploration process. This includes fast checking of constraint compliance, reducing the search space, and quickly relating topological encodings to placements. Sequence-pairs, B*-trees, circuit hierarchy and layout templates are described as advantageous means to tackle these tasks. © 2009 EDAA.

关键词： Topology

来源：评论

学校读者我要写书评

暂无评论

Fabrication of Photonic Crystal based Back-reflectors for Light Management and Enhanced Absorption in Amorphous Silicon Solar Cells

引用

MRS Online Proceedings Library 2009年第1期1153卷 1-6页

作者： Benjamin Curtin Vikram Dalal Rana Biswas Microelectronics Research Center Dept. of Electrical and Computer Engineering Iowa State University Ames USA Dept. of Physics & Astronomy Ames Lab Iowa State University Ames Iowa USA

Photonic crystal based back-reflectors are an attractive solution for light management and enhancing optical absorption in thin film solar cells, without undesirable losses. We have fabricated prototype photonic crystal back-reflectors using photolithographic methods and reactive-ion etching. The photonic crystal back-reflector has a triangular lattice symmetry, a thickness of 250 nm, and a pitch of 765 nm. Scanning electron microscopy images demonstrate high quality long range periodicity. An a-Si:H solar cell device was grown on this back-reflector using standard PECVD techniques. Measurements demonstrate strong diffraction of light and high diffuse reflectance by the photonic crystal back-reflector. The photonic crystal back-reflector increases the average photon collection by ˜9% in terms of normalized external quantum efficiency, relative to a reference device on a stainless steel substrate with an Ag coated back surface.

关键词： thin film Si energy generation

来源：评论

学校读者我要写书评

暂无评论

Investigation of photon redistribution in high temperature photonic crystal structures

Investigation of photon redistribution in high temperature p...

引用

2009 MRS Spring Meeting

作者： Zhao, W. Biswas, R. Puscasu, I. Greenwald, A. Johnson, E. Microelectronics Research Center Dept. of Electrical and Computer Engineering Iowa State University Ames IA 50011 United States Department of Physics and Astronomy Ames Laboratory Iowa State University Ames IA 50011 United States ICX-Photonics Billerica MA 01821 United States

ISBN: (纸本)9781615677795

We have simulated the angle-dependent absorption and thermal emittance of two dimensional metallic and metallodielectric photonic crystals (PCs) with rigorous scattering matrix methods-where Maxwell's equations are solved in Fourier space. These metallic photonic crystals exhibit strong thermal emittance and absorption peaks in the normal direction. This peak splits into multiple peaks at larger and shorter wavelengths away from the normal direction. The thermal emission at different wavelengths is redistributed into different emission angles. There is partial suppression of photon emission at long wavelengths and enhancement at the shorter wavelength spectral range where the thermal emittance has a maximum. Angle-dependent measurements of the emission in metallo-dielectric photonic crystals are performed. Simulations compare well with these measurements and are consistent with the surface plasmon model. The strong dependence of the absorption with angle is very important for thermo-photovoltaic devices. © 2009 Materials Research Society.

关键词： Maxwell equations

来源：评论

学校读者我要写书评

暂无评论

Anomalous “sweeping stress” induced degradation in n-type low temperature poly-Si thin film transistors

Anomalous “sweeping stress” induced degradation in n-type ...

引用

International Symposium on Physical & Failure Analysis of Integrated Circuits

作者： Dapeng Zhou Mingxiang Wang Meng Zhang Han Hao Dongli Zhang Man Wong Dept. of Microelectronics Soochow University Suzhou China Dept. of Electronic and Computer Engineering The Hong Kong University of Science and Technology Kowloon Hong Kong China

Anomalous "sweeping stress" induced degradation is first observed in n-type metal-induced laterally crystallized low temperature thin film transistors (TFTs). Key stress parameters include the maximum drain bias, the sweeping time and the number of sweeping. Degradation occurs only when the maximum drain bias exceeds a critical value. Both transfer and output characteristic degradation is found much similar to that of hot carrier (HC) degradation. But longer sweeping time causes larger degradation, which is opposite to that in dynamic HC degradation. Besides, such degradation can only be observed in low temperature crystallized TFTs.

关键词： Degradation Temperature Thin film transistors Stress Crystallization Hot carriers Threshold voltage Pulse measurements Annealing microelectronics

来源：评论

学校读者我要写书评

暂无评论

Investigation of Photon Redistribution in High Temperature Photonic Crystal Structures

引用

MRS Online Proceedings Library 2009年第1期1162卷 1-6页

作者： W. Zhao R. Biswas I. Puscasu A. Greenwald E. Johnson Microelectronics Research Center and Dept. of Electrical and Computer Engineering Iowa State University Ames USA Department of Physics and Astronomy Ames Laboratory Iowa State University Ames USA ICX-Photonics Billerica USA

We have simulated the angle-dependent absorption and thermal emittance of two dimensional metallic and metallodielectric photonic crystals (PCs) with rigorous scattering matrix methods- where Maxwell’s equations are solved in Fourier space. These metallic photonic crystals exhibit strong thermal emittance and absorption peaks in the normal direction. This peak splits into multiple peaks at larger and shorter wavelengths away from the normal direction. The thermal emission at different wavelengths is redistributed into different emission angles. There is partial suppression of photon emission at long wavelengths and enhancement at the shorter wavelength spectral range where the thermal emittance has a maximum. Angle-dependent measurements of the emission in metallo-dielectric photonic crystals are performed. Simulations compare well with these measurements and are consistent with the surface plasmon model. The strong dependence of the absorption with angle is very important for thermo-photovoltaic devices.

关键词： absorption simulation infrared (IR) spectroscopy

来源：评论

学校读者我要写书评

暂无评论

Observation of combined self-heating and hot-carrier degradation in n-type poly-Si thin-film transistors

Observation of combined self-heating and hot-carrier degrada...

引用

International Symposium on Physical & Failure Analysis of Integrated Circuits

作者： Meng Zhang Mingxiang Wang Huaisheng Wang Dongli Zhang Man Wong Dept. of Microelectronics Soochow University Suzhou China Dept. of Electrical and Electronic Engineering Nanjing Institute of Railway Technology Suzhou China Dept. of Electronic and Computer Engineering Hong Kong University of Science and Technology Kowloon Hong Kong China

Different degradation behaviors of n-type poly-Si thin film transistors under dynamic voltage stresses have been demonstrated. Combined self-heating (SH) and hot-carrier (HC) degradation is first observed under a certain dynamic stress, where the device degradation is dependent on the pulse rising time (t r ) but independent of the falling time (t f ). Absence of the degradation during t f is attributed to the SH suppression of the HC mechanism. Typical HC degradation under pure V g pulses is dependent on t f but in dependent of t r . While in the channel saturation mode, AC HC effect is dependent on both t r and t f . For the low frequency synchronized stresses, AC SH degradation behavior related to the pulse duty time is the same as DC SH.

关键词： Hot carriers Degradation Thin film transistors

来源：评论

学校读者我要写书评

暂无评论

An improved fast Id-Vg measurement technology with expanded application range

An improved fast Id-Vg measurement technology with expanded ...

引用

2009 IEEE International Integrated Reliability Workshop, IIRW 2009

作者： Wang, C. Yu, L.C. Campbell, J.P. Cheung, K.P. Xuan, Y. Ye, P.D. Suehle, J.S. Zhang, D.W. National Institute of Standards and Technology 100 Bureau Drive Gaithersburg MD 20899 United States Birck Nanotechnology Center Purdue University 1205 West State Street West Lafayette IN 47907 United States Dept. of Microelectronics Fudan University 220 Handan Rd Shanghai 200433 China Electrical and Computer Engineering Rutgers University 94 Brett Rd Piscataway NJ 08854 United States

ISBN: (纸本)9781424439218

Fast Id-Vg measurements on very high performance devices (very low channel ON-resistance) and larger area devices (therefore large gate capacitance) are subject to serious distortions. Methods to minimize these distortions are introduced in this paper;thus expanding the applicable range of this important measurement technique. ©2009 IEEE.

关键词： Semiconductor junctions

来源：评论

学校读者我要写书评

暂无评论

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案：

请选择收藏分类：

通借通还

建议与咨询 留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案： 新增检索档案 确定 取消

请选择收藏分类： 新增自定义分类 确定 取消

通借通还

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

请选择保存的检索档案：

请选择收藏分类：