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Impact Ionization Nanowire Transistor with Multiple-Gates, Silicon-Germanium Impact Ionization Region, and Sub-5 mV/decade Subtheshold Swing

Impact Ionization Nanowire Transistor with Multiple-Gates, S...

引用

International Electron Devices Meeting (IEDM)

作者： Eng-Huat Toh Grace Huiqi Wang Ming Zhu Chen Shen Lap Chan Guo-Qiang Lo Chih-Hung Tung Dennis Sylvester Chun-Huat Heng Ganesh Samudra Yee-Chia Yeo Dept. of Electrical and Computer Engineering National University of Singapore (NUS) Singapore Iinstitute of Microelectronics Singapore Silicon Nano Device Lab Department of Electrical and Computer Engineering National University of Singapore Singapore University of Michigan Ann Arbor MI USA

We report the first demonstration of an Impact Ionization nanowire multiple-gate field-effect transistor (I-MuGFET or I-FinFET). Excellent subthreshold swing of sub-5 mV/decade at room temperature was achieved. The multiple- gate structure enhances the impact ionization rate in the fin or nanowire channel, reduces the breakdown voltage and improves device performance. A silicon-germanium (SiGe) impact ionization region (I-region) is integrated on a Si or SiGe nanowire to enhance performance and reduce the breakdown voltage. A record low breakdown voltage of -4.75 V is achieved for SiGe nanowire device. Complementary pair of I-FinFETs were realized. The lower electron and hole impact-ionization threshold energy of SiGe greatly enhances the drive current of n- and p-channel devices by 3 and 2.4 folds, respectively.

关键词： Impact ionization Germanium silicon alloys Silicon germanium Nanoscale devices Electric potential Temperature microelectronics FETs Charge carrier processes Energy consumption

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Headlight prefetching for mobile media streaming

Headlight prefetching for mobile media streaming

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MobiDE'07: 6th ACM International Workshop on Data engineering for Wireless and Mobile Access

作者： Wu, Shiow-Yang Hsu, Jungchu Chen, Chieh-Ming Dept. of Computer Science and Information Engineering National Dong Hwa Univ. Hualien Taiwan E-TEN Information Systems Co. Ltd No.256 Yangguang Street Neihu Chui Taipei Taiwan Microelectronics Technology Inc. Hsinchu Science-based Industrial Park 1 Innovation Road II Hsinchu Taiwan

ISBN: (纸本)159593765X

Multimedia information services in mobile environments are becoming more and more important with the proliferation of 3G technologies. Media streaming, in particular, is a promising technology for providing services such as news clips, live sports, and hot movies on the fly. To avoid service interruption when the users keep moving, proper data management strategies must be employed. We propose a new headlight prefetching technique for the streaming access points to deal with the uncertainty of client movement and the requirement of seamless service hand-off. For each mobile client, we maintain a virtual fan-shaped prefetching zone along the direction of movement similar to the headlight of a moving vehicle. The overlapping area and the accumulated virtual illuminance of the headlight zone on a particular cell determines the degree and volume of prefetching to be made by the streaming access point of that cell. Headlight prefetching solves the issues of identifying the streaming access points responsible for prefetching, the timing and the amount of data to prefetch in a single mechanism which is simple and effective. Simulation results demonstrate that our techniques can significantly decrease streaming disruptions, reduce bandwidth consumption, increase cache utilization and improve service response time. Copyright 2007 ACM.

关键词： Information management

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Silicon-Germanium-Tin (SiGeSn) Source and Drain Stressors formed by Sn Implant and Laser Annealing for Strained Silicon-Germanium Channel P-MOSFETs

Silicon-Germanium-Tin (SiGeSn) Source and Drain Stressors fo...

引用

International Electron Devices Meeting (IEDM)

作者： Grace Huiqi Wang Eng-Huat Toh Xincai Wang Debbie Hwee Leng Seng Sudhinrajan Tripathy Thomas Osipowicz Tau Kuei Chan Keat Mun Hoe S. Balakumar Chih Hang Tung Guo-Qiang Lo Ganesh Samudra Yee-Chia Yeo Dept. of Electrical and Computer Engineering National University of Singapore (NUS) Singapore Singapore Institute of Manufacturing Technology Singapore Institute of Materials Research and Engineering Singapore Department of Physics NUS Singapore Dept. of Physics NUS Institute of Microelectronics

We report a new silicon-germanium-tin (SiGeSn) source and drain stressor with large lattice-mismatch with respect to Si or SiGe for channel strain engineering, and its integration in a SiGe-channel p-FET for performance enhancement. A novel CMOS-compatible process was developed to incorporate Sn in SiGe S/D with high levels of Sn-substitutionality: Sn implant into Si 0.75 Ge 0.25 source and drain (S/D) regions, followed by either excimer laser annealing (LA) or solid phase epitaxy (SPE) to restore S/D crystallinity. Sub-50 nm p-FETs were fabricated. With a substitutional Sn concentration of 8% in SiGe S/D regions, equivalent to forming Si 0.4 Ge 0.6 in the S/D region, enhancement of I Dsat and hole mobility are 82% and 135%, respectively, over control p- FETs without Sn incorporation. With the first demonstration of SiGeSn S/D stressors, we provide a technology extension to SiGe S/D technology for further p-FFT enhancement.

关键词： Tin Implants Annealing Germanium silicon alloys Silicon germanium MOSFET circuits Capacitive sensors Solid lasers Epitaxial growth Crystallization

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Proposal of an ISO/IEEE11073 Platform for Healthcare Telemonitoring: Plug-and-Play Solution with new Use Cases

Proposal of an ISO/IEEE11073 Platform for Healthcare Telemon...

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29th Annual International Conference of the IEEE engineering in Medicine and Biology Society (EMBS 2007), vol.16

作者： M. Galarraga I. Martinez L. Serrano P. de Toledo J. Escayola J. Fernandez S. Jimenez-Fernandez S. Led M. Martinez-Espronceda E. Viruete J. Garcia Communications Technologies Group Aragon Institute for Engineering Research University of Zaragoza Spain PST Microelectronics Crolles France France Telecom. CNET Grenoble France Electrical and Electronics Engineering Dept Public University of Navarra Spain Computer Science Department Carlos III University of Madrid Spain Bioengineering and Telemedicine Research Centre (GBT) Technical University Madrid Spain

Remote patient monitoring in e-Health is everyday closer to be a mature technology/service. However, there is still a lack of development in areas such as standardization of the sensor's communication interface, integration into Electronic Healthcare Record systems or incorporation in ambient-intelligent scenarios. This work identifies a set of use cases involved in the personal monitoring scenario and highlights the related features and functionalities, as well as the integration and implementation difficulties found when these are to be implemented in a system based on the ISO/IEEE11073 (X73) standard. It is part of a cooperative research effort devoted to the development of an end-to-end standards-based telemonitoring solution. Standardization committees are working towards adapting the X73 standard to this emerging personal health devices market and use case identification is essential to direct these revisions.

关键词： Proposals Medical services ISO standards Wireless sensor networks Intelligent sensors Standardization Biomedical monitoring Protocols Patient monitoring Prototypes

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DotGrid: ***-based infrastructure for global Grid computing

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6th IEEE International Symposium on Cluster Computing and the Grid, 2006. CCGRID 06

作者： Poshtkuhi, Alireza Abutalebi, Ali Haj Ayough, Leila Mahmoudi Hessabi, Shaahin Islamic Azad University Qazvin Branch Iran Microelectronics Research and Design Center of IRAN Iran Dept. of Computer Engineering Sharif University of Technology Iran

ISBN: (纸本)0769525857

Recently, Grid infrastructures have provided wide integrated use of resources. DotGrid intends to introduce required Grid services and toolkits that are implemented as a layer wrapped over the existing operating systems. Our DotGrid has been developed based on Microsoft .NET in Windows and MONO .NET in Linux and UNIX. Using DotGrid APIs, Grid middlewares and applications can be implemented easily. We evaluated our DotGrid capabilities by implementing some applications including a grid-based distributed cryptographic engine and also a typical computational problem. © 2006 IEEE.

关键词： Parallel processing systems

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A CFAR synchronization scheme for impulse based UWB receiver

A CFAR synchronization scheme for impulse based UWB receiver

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ISCAS 2006: 2006 IEEE International Symposium on Circuits and Systems

作者： Rui, Cao Yuanjin, Zheng Yong, Lian Dept. of Electrical and Computer Engineering National University of Singapore Singapore 117576 Singapore Integrated Circuits and System Department Institute of Microelectronics Singapore 117685 Singapore

ISBN: (纸本)0780393902

A novel synchronization scheme for impulse radio (IR) UWB receiver based on Trigg and Leach detector was proposed in this paper. The analysis revealed that additional gain of 5dB - 10dB was achieved with the proposed scheme. For example, to achieve the specifications of detection probability Pd ≥ 0.8 and false alarm probability Pfa &le 10-6, the conventional matched filter (MF) based scheme requires SNR of 15dB, while only 5dB is needed for the proposed scheme. The performance of the proposed scheme was further verified by simulations. © 2006 IEEE.

关键词： Signal receivers

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Carrier transport characteristics of Sub-30 nm strained N-channel FinFETs featuring silicon-carbon source/drain regions and methods for further performance enhancement

Carrier transport characteristics of Sub-30 nm strained N-ch...

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2006 International Electron Devices Meeting, IEDM

作者： Liow, Tsung-Yang Tan, Kian-Ming Chin, Hock-Chun Lee, Rinus T. P. Tung, Chih-Hang Samudra, Ganesh S. Balasubramanian, N. Yeo, Yee-Chia Silicon Nano Device Lab. Dept. of Electrical and Computer Engineering National University of Singapore 117576 Singapore Singapore Institute of Microelectronics 11 Science Park Road 117685 Singapore Singapore

ISBN: (纸本)1424404398

We report performance optimization techniques for FinFETs with Si 0.99C0.01 source and drain (S/D) regions and sub-30 nm gate lengths. By scaling up the Si0.99C0.01 stressor thickness, a ∼9% IDSat enhancement can be obtained. A further 16% IDSat enhancement can be achieved with the adoption of slim spacers. Carrier backscattering study was performed to clarify the carrier transport characteristics such as ballistic efficiency and carrier source injection, showing consistency with observed IDSat enhancement.

关键词： FinFET

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Strained N-channel FinFETs with 25 nm gate length and silicon-carbon source/drain regions for performance enhancement

Strained N-channel FinFETs with 25 nm gate length and silico...

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2006 Symposium on VLSI Technology, VLSIT

作者： Liow, Tsung-Yang Tan, Kian-Ming Lee, Rinus T. P. Du, Anyan Tung, Chih-Hang Samudra, Ganesh S. Yoo, Won-Jong Balasubramanian, N. Yeo, Yee-Chia Silicon Nano Device Lab. Dept. of Electrical and Computer Engineering National University of Singapore 117576 Singapore Singapore Institute of Microelectronics 11 Science Park Road 117685 Singapore Singapore

ISBN: (纸本)1424400058

We report the demonstration of 25 nm gate length LG tri-gate FinFETs with Si0.99C0.01 source and drain (S/D) regions. The strain-induced mobility enhancement due to the Si0.99C 0.01 S/D leads to a drive current IDsat improvement of 20% at a fixed off-state current Ioff of 1×10-7 A/μm. With additional channel strain engineering, FinFETs incorporating Si0.99C0.01 S/D and a tensile-stress silicon nitride (SiN) capping etch-stop layer (ESL) achieve an IDsat enhancement of 56%. © 2006 IEEE.

关键词： Gate dielectrics

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Novel nickel-alloy suicides for source/drain contact resistance reduction in N-channel multiple-gate transistors with sub-35nm gate length

Novel nickel-alloy suicides for source/drain contact resista...

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2006 International Electron Devices Meeting, IEDM

作者： Lee, Rinus T. P. Liow, Tsung-Yang Tan, Kian-Ming Lim, Andy Eu-Jin Wong, Hoong-Shing Lim, Poh-Chong Lai, Doreen M. Y. Lo, Guo-Qiang Tung, Chih-Hang Samudra, Ganesh Chi, Dong-Zhi Yeo, Yee-Chia Silicon Nano Device Lab. Dept .Of Electrical and Computer Engineering National University of Singapore 117576 Singapore Institute of Materials Research and Engineering 3 Research Link 117260 Singapore Institute of Microelectronics 11 Science Park Road 117685

ISBN: (纸本)1424404398

In this work, we examined the Schottky-Barrier height modulation of NiSi by the incorporation of Aluminum (Al), Titanium (Ti), Erbium (Er), and Yterbium (Yb) in NiSi to form different NiSi-alloys. Among the NiSi-alloy candidates investigated, it was found that the NiAl-alloy suicide provides the most effective Schottky-Barrier height lowering (∼250 meV) on n-Si(001) substrates. Integration of NiAl-alloy suicides as the source and drain (S/D) suicide material for Multiple-Gate transistors (MuGFETs) was explored, and shown to deliver a drive current IDsat enhancement of 34% compared to MuGFETs employing NiSi S/D. We further showed that the novel NiAl-alloy silicidation process is compatible with lattice-mismatched silicon-carbon (SiC) S/D stressors. NiAl-alloy suicide is therefore a promising S/D suicide material for reducing the high parasitic series resistance in narrow fin MuGFETs for enhanced device performance.

关键词： Multiple-gate field-effect transistors

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50 nm silicon-on-insulator N-MOSFET featuring multiple stressors: Silicon-carbon source/drain regions and tensile stress silicon nitride liner

50 nm silicon-on-insulator N-MOSFET featuring multiple stres...

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2006 Symposium on VLSI Technology, VLSIT

作者： Ang, Kah-Wee Chui, King-Jien Chin, Hock-Chun Foo, Yong-Lim Du, Anyan Deng, Wei Li, Ming-Fu Samudra, Ganesh Balasubramanian, N. Yeo, Yee-Chia Silicon Nano Device Lab. Dept. of Electrical and Computer Engineering National University of Singapore Singapore 117576 Singapore Institute of Microelectronics 11 Science Park Road Singapore Singapore Institute of Materials Research and Engineering 3 Research Link Singapore Singapore

ISBN: (纸本)1424400058

A novel n-channel strained SOI transistor featuring siliconcarbon (SiC) source/drain (S/D) regions and tensile stress silicon nitride (SiN) liner is demonstrated for the first time. Drive current IDsat enhancement contributed by the dual stressors is found to be additive and a significant increase in IDsat of 55% is observed at a gate length LG of 50 nm. In addition, we report the dependence of drive current on channel orientation, with highest IDsat observed for strained n-MOSFETs with the [010] channel direction. A study of the carrier transport characteristics indicate reduced channel backscattering and enhanced carrier injection velocity due to the strain effects. © 2006 IEEE.

关键词： MOSFET devices

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