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A computationally efficient model for inversion layer quantization effects in deep submicron N-channel MOSFET's

IEEE TRANSACTIONS ON ELECTRON DEVICES 1996年第1期43卷 90-96页

作者： Hareland, SA Krishnamurthy, S Jallepalli, S Yeap, CF Hasnat, K Tasch, AF Maziar, CM Microelectronics Research Center Department of Electrical and Computer Engineering University of Texas Austin Austin TX USA University of Texas at Austin Austin TX US Dept. of Electr. & Comput. Eng. Texas Univ. Austin TX USA

Successful scaling of MOS device feature size requires thinner gate oxides and higher levels of channel doping in order to simultaneously satisfy the need for high drive currents and minimal short-channel effects. However, in deep submicron (less than or equal to 0.25 mu m gate length) technology;the combination of the extremely thin gate oxides (t(ox) less than or equal to 10 nm) and high channel doping levels (greater than or equal to 10(17) cm(-3)) results in transverse electric fields at the Si/SiO2 interface that are sufficiently large, even near threshold, to quantize electron motion perpendicular to the interface, This phenomenon is well known and begins to have an observable impact on room temperature deep submicron MOS device performance when compared to the traditional classical predictions which do not take into account these quantum mechanical effects, Thus, for accurate and efficient device simulations, these effects must be properly accounted for in today's widely used moment-based device simulators, This paper describes the development and implementation into PISCES of a new computationally efficient three-subband model that;predicts both the quantum mechanical effects in electron inversion layers and the electron distribution within the inversion layer. In addition, a model recently proposed by van Dort er al, has been implemented in PISCES, By comparison with self-consistent calculations and previously published experimental data, these two different approaches for modeling the electron inversion layer quantization are shown to be adequate in order to both accurately and efficiently simulate many of the effects of quantization on the electrical characteristics of N-channel MOS transistors.

关键词： Computational modeling Quantization Electrons MOS devices Doping Quantum mechanics Quantum computing Semiconductor process modeling Temperature Distributed computing

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Manufacturability of low power CMOS technology solutions 96

Manufacturability of low power CMOS technology solutions

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Proceedings of the 1996 international symposium on Low power electronics and design

作者： A. J. Strojwas M. Quarantelli J. Borel C. Guardiani G. Nicollini G. Crisenza B. Franzini J. Wiart Dept. of Electrical and Computer Engineering Carnegie Mellon University 5000 Forbes Ave. Pittsburgh PA Dept. of Electrical and Computer Engineering Carnegie Mellon University 5000 Forbes Ave. Pittsburgh PA and Università di Brescia Dipartimento di Elettronica per l'Automazione v. Branze 38 25123 Brescia Italy SGS-Thomson Microelectronics Central R&D 850 rue J. Monnet BP 16 38926 Crolles cedex France SGS-Thomson Microelectronics Central R&D v. C.Olivetti 2 20041 Agrate Brianza Italy

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Low dark current InAlAs/InGaAs metal-semiconductor-metal photodetectors

Low dark current InAlAs/InGaAs metal-semiconductor-metal pho...

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Indium Phosphide and Related Materials Conference

作者： A. Wohlmutt P. Fay C. Caneau I. Adesida Dept. of Electr. & Comput. Eng. Illinois Univ. Urbana IL USA Center for Compound Semiconductor Microelectronics Beckman Institute and Department of Electrical and Computer Engineering University of Illinois Urbana IL USA Bell Communications Research Inc. Red Bank NJ USA

Metal-semiconductor-metal photodetectors (MSMPDs) have been shown to be important components for integrated optoelectronic receivers due to their high speed performance, low signal-to-noise ratio, and integrability with field-effect transistor technology. Since the signal-to-noise ratio of photodetectors is inversely proportional to the dark current, it is important to devise techniques to reduce the dark current while maintaining high speed performance. In this paper, we have reduced the dark current and also suppressed breakdown effects in InAlAs-InGaAs MSMPDs by placing the contact pads and the tips of the electrodes on an insulating layer of silicon nitride.

关键词： Dark current Indium compounds Indium gallium arsenide Photodetectors Signal to noise ratio Integrated optoelectronics FETs Electric breakdown Electrodes Insulation

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Systolic algorithms for tree pattern matching

Systolic algorithms for tree pattern matching

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IEEE International Conference on computer Design: VLSI in computers and Processors, (ICCD)

作者： A. Ejnioui N. Ranganathan Dept. of Comput. Sci. & Eng. Univ. of South Florida Tampa FL USA Center for Microelectronics Research Department of Computer Science and Engineering University of South Florida Tampa FL USA

The objective of tree matching is to find the set of nodes at which a pattern tree matches a subject tree. Several sequential and parallel algorithms have been proposed in the literature for this compute bound problem. Most of the parallel algorithms are based on the theoretical PRAM model of computation. In this paper, we propose two efficient parallel algorithms for tree pattern matching based on the linear systolic array model. The algorithms can be mapped onto any SIMD machine. The algorithms require O(n+m) time to perform the matching using either n or m processors, where n is the size of the subject tree and m is the size of the pattern tree. The algorithms represent a significant improvement over the existing ones in view of implementation.

关键词： Pattern matching Parallel algorithms Concurrent computing Computational modeling Phase change random access memory Object recognition Very large scale integration microelectronics computer science computer vision

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LOW DRIVE VOLTAGE GAAS QUANTUM-WELL ELECTROABSORPTION MODULATORS OBTAINED WITH A DISPLACED JUNCTION

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IEEE PHOTONICS TECHNOLOGY LETTERS 1994年第5期6卷 619-622页

作者： CROOK, AC COCKERILL, TM FORBES, DV HERZINGER, CM DETEMPLE, TA COLEMAN, JJ Engineering Research Center for Compound Semiconductor Microelectronics Department of Electrical and Computer Engineering University of Illinois Urbana IL USA University of Illinois at Urbana-Champaign Urbana IL US Dept. of Electr. & Comput. Eng. Illinois Univ. Urbana IL USA

A reduction in the drive voltage of an electroabsorption waveguide modulator based on an AlGaAs/GaAs quantum well laser heterostructure is demonstrated by a simple change in the position of the p-n junction relative to the quantum well. This is accomplished by adjusting the doping profile and does not significantly alter the operation of the structure as a laser or degrade other aspects of device performance such as reverse breakdown voltage and series resistance. A contrast ratio of 25 dB (5 dB/100 mum) was obtained with a bias change of -2 V.

关键词： Low voltage Gallium arsenide Quantum well lasers Waveguide lasers Waveguide junctions Waveguide transitions Laser transitions P-n junctions Doping profiles Degradation

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Comparative study of statistical distributions in electromigration-induced failures of Al/Cu thin-film interconnects

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Active and Passive Electronic Components 1994年第2期16卷 119-119页

作者： Loupis, M.I. Avaritsiotis, J.N. Tziallas, G.D. National Technical University of Athens School of Electrical Engineering Computer Science Dept. Microelectronics Group Greece

In electromigration failure studies, it is in general assumed that electromigration-induced failures may be adequately modelled by a log-normal distribution. Further to this, it has been argued that a lognormal distribution of failure times is indicative of electromigration mechanisms. We have combined post processing of existing life-data from Al/Cu + TiW bilayer interconnects with our own results from Al/Cu interconnects to show that the Log Extreme Value distribution is an equally good statistical model for electromigration failures, even in cases where grain size exceeds the linewidth. The significance of such a modelling is particularly apparent in electromigration failure rate prediction.

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Optimal noise matching of 0.25 micron gate GaAs MESFETs for low power personal communications receiver circuit designs

Optimal noise matching of 0.25 micron gate GaAs MESFETs for ...

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Microwave, MTT-S International Symposium

作者： D. Scherrer P.J. Apostolakis J. Middleton J. Kruse M. Feng Dept. of Electr. & Comput. Eng. Illinois Univ. Urbana IL USA Department of Electrical and Computer Engineering Center for Compound Semiconductor Microelectronics University of Illinois Urbana IL USA

0.25 /spl mu/m GaAs MESFETs are shown to be excellent device candidates for low current, low noise receiver circuits in personal communicators. The measured low current performance of ion-implanted 0.25 /spl mu/m gate... 详细信息

关键词： Gallium arsenide MESFETs Circuit noise Current measurement FETs Noise figure Gain Equivalent circuits

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A SHANNON-BOUND DYNAMIC BIT ALLOCATION ALGORITHM

A SHANNON-BOUND DYNAMIC BIT ALLOCATION ALGORITHM

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International Conference on Signal Processing(ICSP’93)

作者： Kai-Kuang Ma Sarah A.Rajala National University of Singapore Institute of Microelectronics Block 750 E Chai Chee Road North Carolina State University Dept.of Electrical & Computer Engineering Campus Box 7911 Raleigh NC 27695-7911 U.S.A.

An optimum bit allocation algorithm is developed (called the direct form) for subband source coding subject to the Shannon rate-distortion bound using a Lagrange multiplier optimization technique.A sequential form is then derived from the direct form for those quantizers with fixed bit *** direct form shows that the Shannon-bound based algorithm exploits the subband energy while the standard-deviation based algorithm,proposed by Huang and Schultheiss, uses the subband standard *** coding performances are then compared using subband absolute moment block truncation coding (SAMBTC) on image *** simulation results show that the Shannon-bound based algorithm outperforms the standard-deviation based algorithm in all cases and is significantly superior in many cases.

关键词： Lagrange A SHANNON-BOUND DYNAMIC BIT ALLOCATION ALGORITHM

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Submicron Schottky-collector AlAs/GaAs resonant tunnel diodes

Submicron Schottky-collector AlAs/GaAs resonant tunnel diode...

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International Electron Devices Meeting (IEDM)

作者： S.T. Alien H. Reddy M.J.W. Rodwell R.P. Smith S.C. Martin J. Lui R.E. Muller Dept. of Electr. & Comput. Eng. California Univ. Santa Barbara CA USA Department of Electrical and Computer Engineering University of California Santa Barbara CA USA Center for Space Microelectronics Technology Jet Propulsion Laboratory California Institute of Technology Pasadena CA USA

0.1 /spl mu/m Schottky-collector AlAs/GaAs resonant tunnel diodes were fabricated; from their measured DC and microwave parameters, and including the effect of the quantum well lifetime, a maximum frequency of oscillation of 900 GHz is computed. To the authors' knowledge this is the highest reported for any AlAs/GaAs resonant tunnel diode.< >

关键词： Gallium arsenide Resonant tunneling devices Schottky diodes Electrons Semiconductor diodes Frequency Space technology Ohmic contacts Schottky barriers Contact resistance

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INVESTIGATION AND OPTIMIZATION OF INGAAS/INP HETEROINTERFACES GROWN BY CHEMICAL BEAM EPITAXY USING SPECTROSCOPIC ELLIPSOMETRY AND PHOTOLUMINESCENCE

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JOURNAL OF ELECTRONIC MATERIALS 1992年第3期21卷 269-275页

作者： SHERWIN, ME TERRY, FL MUNNS, GO HERMAN, JS WOELK, EG HADDAD, GI 1. Center for High Frequency Microelectronics Electrical Engineering and Computer Science Dept. The University of Michigan 2435 EECS Building 48109-2122 Ann Arbor MI

Spectroscopic ellipsometry (SE) has been used to investigate transition layers for InGaAs/InP heterointerfaces. For the case of InGaAs on InP, we have found that the samples can be best modeled by a strained InxGa1-xAs film with the possible presence of a thin interface region (< 15 angstrom). We are unable to conclusively determine the existence of such a thin transition region. For InP on InGaAs, we find clear indications of As contamination in the bulk film, and that the addition of a thin interface region of In0.75Ga0.25As0.5P0.5 improves both the numerical fit and shape of the dielectric response curves, especially around E1 and E1 + delta-1, where the effects of a transition region are most pronounced. However, difficulties in modeling the dielectric response of the contaminated InP film make identification of an interface transition region only speculative at this point. Multiple single quantum well structures have also been grown and analyzed with 7K photoluminescence. The quality of the quantum wells shows strong dependence on the gas switching sequence used at the heterointerfaces. The best switching sequence produced a 0.5 nm well with a 7K FWHM of only 12.3 meV. Multiple quantum wells have also been grown to investigate the uniformity and repeatability of our system. Twenty period MQWs with a well width of 1.6 nm display a 14K FWHM of 7.9 meV.

关键词： SPECTROSCOPIC ELLIPSOMETRY CHEMICAL BEAM EPITAXY INGAAS INP INTERFACES

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