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Proceedings of the 4th International Conference on Neural Information Processing Systems

作者： Avijit Saha Jim Christian D. S. Tang Chuan-Lin Wu Microelectronics and Computer Technology Corporation Austin TX and Dept. of ECE Univ. of Texas at Austin Austin TX Microelectronics and Computer Technology Corporation Austin TX Department of Electrical and Computer Engineering University of Texas at Austin Austin TX

ISBN: (纸本)9781558601840

We introduce oriented non-radial basis function networks (ONRBF) as a generalization of Radial Basis Function networks (RBF)- wherein the Euclidean distance metric in the exponent of the Gaussian is replaced by a more general polynomial. This permits the definition of more general regions and in particular- hyper-ellipses with orientations. In the case of hyper-surface estimation this scheme requires a smaller number of hidden units and alleviates the "curse of dimensionality" associated kernel type approximators. In the case of an image, the hidden units correspond to features in the image and the parameters associated with each unit correspond to the rotation, scaling and translation properties of that particular "feature". In the context of the ONBF scheme, this means that an image can be represented by a small number of features. Since, transformation of an image by rotation, scaling and translation correspond to identical transformations of the individual features, the ONBF scheme can be used to considerable advantage for the purposes of image recognition and analysis.

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Agglomeration of Cobalt Silicide Films

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MRS Online Proceedings Library 1990年第1期202卷 101-106页

作者： Z. G. Xiao G. A. Rozgonyi C. A. Canovai C. M. Osburn Dept. of Materials Science and Engineering N. C. State University Raleigh USA Dept. of Electrical and Computer Engineering N. C. State University Raleigh USA Center for Microelectronics MCNC Research Triangle Park USA

The agglomeration of Co silicide films formed on Si substrates processed with different Co film thickness was investigated by TEM, XRD, and four-point-probe measurements. It was found that thermal grooving always accompanies the film formation, while islanding can occur during high temperature thermal stability testing, or during formation of very thin films at moderate temperatures. In addition to whole film agglomeration, partial agglomeration on the top of the film has been observed, which is prominent and important for thin films. A theoretical model of agglomeration for silicide films is presented, which shows that when the ratio of grain size to film thickness is smaller than a critical value, the film will not lose its continuity. Also, grain boundary migration was found to have a suppressing effect on thermal grooving. Both a small grain size and a low grain boundary energy are shown to be favorable for improving the thermal stability.

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TiSi 2 Thin Films Formed on Crystalline and Amorphous Silicon

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MRS Online Proceedings Library 1990年第1期181卷 167-172页

作者： Z.G. Xiao H. Jiang J. Honeycutt C.M. Osburn G. McGuire G.A. Rozgonyi Dept. of Materials Science and Engineering North Carolina State University Raleigh USA The Royal Institute of Technology Solid State Electronics Kista Sweden Dept.of Electrical and Computer Engineering North Carolina State University Raleigh USA Microelectronics Center of North Carolina Research Triangle Park USA

TiSi2 thin films were formed on crystalline and amorphous silicon substrates obtained by Ge+ and Ge++B+ implantation and optional subsequent annealing. Transmission electron microscopy, X-ray diffraction and electrical resistivity analysis revealed that the silicide formed on amorphous Si has more tendency to have a C54 structure rather than the metastable C49 structure. Also, the grain size is smaller and the silicide/silicon interface is smoother for silicides formed on amorphous Si. Comparison between implanted and unimplanted, (100) and (111) Si substrates indicated that the origin of the differences can be attributed to the latent energy stored in amorphous silicon, which favors the silicide with fine grains and promotes the transformation to the C54 phase. Non-random distribution of planar defects in C49 grains has been observed by plan-view TEM. A proposal that these defects are transformation stress induced microtwins is presented.

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Far-infrared composite microbolometers

Far-infrared composite microbolometers

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Microwave, MTT-S International Symposium

作者： S.M. Wentworth D.P. Neikirk Dept. of Electr. & Comput. Eng. Texas Univ. Austin TX USA Microelectronics Research Center Deparment of Electrical and Computer Engineering University of Texas Austin Austin TX USA

Composite microbolometers for use as broadband far-infrared radiation detectors have been constructed. These novel devices utilize nichrome load elements which can be impedance-matched to a planar antenna. The load elements are thermally coupled to tellurium detectors. Room-temperature responsivities of 120 V/W and noise equivalent powers of 6.7*10/sup -9/ W/ square root Hz have been achieved.< >

关键词： Tellurium Bolometers Impedance Loaded antennas Planar arrays Antenna measurements Gold Radiation detectors Thermal loading Infrared detectors

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Synthesis of analog ASICs using optimization in conjunction with circuit simulation techniques

Synthesis of analog ASICs using optimization in conjunction ...

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Annual IEEE International Conference and Exhibit ASIC

作者： K. Doganis K. Walsh P. Linardes Electrical Engineering Software Inc. Santa Clara CA USA Computer Science and Microelectronics Dept School of Applied Science Aristotelion University Thessaloniki Greece

A description is given of the optimization methodology applied by the PRECISE computer program for the synthesis of analog ASICs. The application of simulation and optimization technology allows engineers to determine easily and automatically the element values and geometries needed to reach desired or measured analog circuit performance. The integration of both technologies to determine the optimum design parameters necessary to reach circuit objectives specified by the designer is described. Optimization in AC, DC, and transient domains can occur simultaneously to account for the interdependencies of the circuit element value in those domains. In addition, the optimization process can take place in discrete and constrained design parameter space so that the technological limits are accounted for and the optimal drawn lengths and widths are manufacturable. The optimization approach can be a powerful tool for the design of analog ASICs.< >

关键词： Design optimization Space technology Optimization methods Analog computers Circuit synthesis Application software Computational modeling Solid modeling Circuit simulation Geometry

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A study of ultra shallow junctions by diffusion from self-aligned silicides 19

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19th European Solid State Device Research Conference, ESSDERC 1989

作者： Jiang, H. Osburn, C.M. Xiao, Z.-G. Smith, P. McGuire, G. Rozgonyi, G.A. Dept. of Electrical and Computer Engineering North Carolina State University RaleighNC United States Royal Institute of Technology Electrum Solid State Electronics Kista Sweden Microelectronics Center of North Carolina Box 12889 Research Triangle ParkNC United States Dept. of Materials Science North Carolina State University RaleighNC United States

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A Study of Ultra Shallow Junctions by Diffusion from Self-aligned Silicides

A Study of Ultra Shallow Junctions by Diffusion from Self-al...

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European Conference on Solid-State Device Research (ESSDERC)

作者： H. Jiang C.M. Osburn Z-G. Xiao P. Smith G. McGuire G.A. Rozgonyi Solid State Electronics Royal Institute of Technology Kista Sweden Department of Electrical and Computer Engineering North Carolina State University Raleigh NC USA Microelectronics Center of North Carolina NC USA Department Materials Science North Carolina State University Raleigh NC USA Dept. of Materials Science North Carolina State University Raleigh NC 27695 USA

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FINE-GRAINED POLYSILICON FILMS WITH BUILT-IN TENSILE STRAIN

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IEEE TRANSACTIONS ON ELECTRON DEVICES 1988年第6期35卷 800-801页

作者： GUCKEL, H BURNS, DW VISSER, CCG TILMANS, HAC DEROO, D Wisconsin Center of Applied Microelectronics Department of Electrical and Computer Engineering University of Wisconsin Madison Madison WI USA Dept. of Electr. & Comput. Eng. Wisconsin Univ. Madison WI USA

Novel processing conditions and strain diagnostic structures are used to demonstrate that polysilicon films with built-in tensile-strain can be achieved and that any physical size limitations due to compressive-buckli... 详细信息

关键词： Polysilicon Tensile strain Films physical size

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Effects of rapid thermal postoxidation of rapid thermally nitrided oxides

Effects of rapid thermal postoxidation of rapid thermally ni...

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Advanced Processing of Semiconductor Devices II 1988

作者： Lee, S. Shih, D.K. Kwong, D.L. NCR Corporation Microelectronics Division 1635 Aeroplaza Drive Colorado SpringsCO80916 United States University of Texas at Austin Microelectronics Research Center Dept. of Electrical and Computer Engineering AustinTX78712 United States

The chemical and electrical characteristics of -10 nm MOS gate dielectrics formed by the rapid thermal postoxidation of rapid thermally nitrided oxides (RTO/RTN oxides) are described. TEM micrographs show that the interface smoothed by the RTN (1000°C,60s) of SiO2 is roughened by the subsequent heavy RTO (1100°C,60s). The fixed charge and interface state densities of the produced films are strongly dependent on the degree of reoxidation of Si at the interface. MOS capacitor results indicate that, as compared to pure oxide films, the RTO/RTN oxide samples exhibit reduced bulk trap and interface state generation rates under high electrical field stress. Optimized RTN and RTO processes can produce thin dielectrics with enhanced charge to breakdown (Qbd) strength and flat band voltage (VFB) stability. This multiple rapid thermal processing (RTP) procedure is found to be compatible with MOSFET fabrication technology and to reduce weak spots in thermal oxides. The electrical characteristics of n-channel transistors fabricated with RTO/RTN dielectrics are comparable to those of transistors fabricated with pure oxides. © 1988 SPIE. All rights reserved.

关键词： Silica

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The Use of Double Heterojunction Diodes in Monolithic Phase Shifters

The Use of Double Heterojunction Diodes in Monolithic Phase ...

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European Conference on Microwave

作者： Jean-Louis Cazaux Dimitris Pavlidis Geok-Ing Ng Marcel Tutt Alcatel ESpace Toulouse France University of Michigan USA Center for High Frequency Microelectronics Solid State Electronics Laboratory Dept. of Electrical Engineering and Computer Science University of Michigan Ann Arbor MI USA Center for High Frequency Microelectronics Solid State Electronics Laboratory Dept. of Electrical Engineering and Computer Science The University of Michigan Ann Arbor MI. USA 48109-2122

Double Heterojunction Diodes are studied theoretically and experimentally and show improved capacitance ratios typically of the order of 7 over MESFET technology. A monolithic T-phase shifter has been built using this approach and good phase shift characteristics (Δø= 55 degrees, insertion loss = 2 dB, VSWR≤ 1.8) has been demonstrated experimentally at 6 GHz. The design sensitivity on material parameters is presented and the relative merits of the heterostructure approach for monolithic applications are discussed.

关键词： Heterojunctions Phase shifters Capacitance Schottky diodes MESFETs Gallium arsenide HEMTs DH-HEMTs Voltage Capacitance-voltage characteristics

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