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Improving the Performance of Asphalt Mixtures with Highly Acidic Aggregates in Central Vietnam Using Modifier Based on Styrene-Butadiene-Styrene and Rosin Resin

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Journal of materials in Civil engineering 2025年第7期37卷

作者： Nguyen, Lan Ngoc Lee, Hosin David Bui, Lam Tung Kim, Young-Ik Truong, Van Quyet Nguyen, May Huu Nguyen, Du Van Dept. of Construction Materials Faculty of Construction Engineering Univ. of Transport and Communications No. 03 Cau Giay Hanoi100000 Viet Nam Dept. of Civil and Environmental Engineering Iowa Technology Institute The Univ. of Iowa Iowa CityIA52242 United States Research Dept. Hansoo Natech Co. Ltd. 6-20 Yuseong-daero 1205beon-gil Yuseong-gu Daejeon34104 Korea Republic of Civil and Environmental Engineering Program Graduate School of Advanced Science and Engineering Hiroshima Univ. 1-4-1 Kagamiyama Higashi-Hiroshima Hiroshima739-8527 Japan Faculty of Civil Engineering Univ. of Transport and Communications Campus in Ho Chi Minh City Ho Chi Minh City700000 Viet Nam

In Central Vietnam, the aggregate typically originates from highly acidic rocks containing a significant amount of silicon dioxide (SiO2), leading to poor adhesion quality with virgin asphalt binder. Hence, the asphalt mixture production usually needs to utilize adhesion promoters. Based on the chemical compositions of the sample aggregate (up to 72.3% SiO2), research has been conducted to introduce an adhesive agent called rubber modified compound (RMC-160), which is composed of styrene-butadiene-styrene (SBS) with petroleum hydrocarbon resin, treated clay and mineral oil. This article presents the research findings regarding the adhesion effectiveness of RMC-160-modified asphalt binder to high acid-based aggregate through laboratory and field tests, along with the mixture performance under both short-term oven aging (STOA) and long-term oven aging (LTOA). The test results exhibited remarkable effects, whereby the asphalt binder modified with RMC-160 additive significantly increased the adhesion level from Grade 2 to Grade 4, and the asphalt mixtures containing RMC-160 had lower rutting and higher cracking tolerance (CTIndex) under both the STOA and LTOA conditions. © 2025 American Society of Civil Engineers.

关键词： Silicon oxides

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Block copolymer thin films above and below the order-disorder transition temperature

Block copolymer thin films above and below the order-disorde...

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Interfaces, Adhesion and Processing in Polymer Systems

作者： Limary, R. Green, P.F. Dept. of Chemical Engineering Graduate Program in Materials Sci. The University of Texas at Austin Austin TX United States

Symmetric diblock copolymers undergo a disorder to order transition below a microphase separation transition temperature. In this temperature range the structure is characterized by alternating lamellae of thickness L. In thin film geometries, the lamellae are oriented normal to the substrate if there is a preferential interaction between either of the block constituents and the substrate/copolymer or copolymer/vacuum interfaces. Depending on the relation between the film thickness and L, the topography of the film might comprise of holes, islands or spinodal-like structures. We show that in a polystyrene-b-poly(methyl methacrylate) diblock copolymer of molecular weight 20, 000 g/mol, above the microphase separation transition temperature, the topography of the film depends on the thickness. A heirarchy of bicontinuous patterns and holes is observed with increasing film thickness for films thinner than 35 nm.

关键词： Block copolymers

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Block Copolymer Thin Films Above and Below the Order-Disorder Transition Temperature

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MRS Online Proceedings Library 2011年第1期629卷 1-6页

作者： Ratchana Limary Peter F. Green Dept. of Chemical Engineering and the Graduate Program in Materials Science The University of Texas at Austin Austin USA

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Scattering Studies of Cyrstallization in Highly Oriented Polymers

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MRS Online Proceedings Library 1986年第1期79卷 215-223页

作者： J. M. Schultz Dept. of Chemical Engineering and Materials Graduate Program University of Delaware Newark USA

The solidification of low molecular weight materials from their melts (in the absence of temperature fields) generally leads to a product with no preferred orientation, independent of the extent or rate of deformation of the melt. The solidification of polymers from a highly deformed melt or solution nearly always leads to a product with preferred molecular orientation. Further, the rate of solidification can be significantly increased by melt deformation. The change in rate, relative to that in a quiescent melt or solution, can be several orders of magnitude [1]. These differences, relative to small-molecule systems, arise from the degree to which orientation and local strain can be maintained in the melt. Due to the long-range connectivity within a polymer molecule, it is possible to impart large extensions to these molecules in the molten state, and significant time is often required for the molecules to relax back to their undistorted, coiled state. If crystallization or glass formation occurs before the chain can relax, an extended molecular configuration can be retained. Thus in the solidification of oriented polymers there exists a competition between the “freezing” of the molecular orientation and the relaxation (re-coiling) of the molecules.

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Environmentally benign materials for electronics: A review of current developments and emerging technologies

Environmentally benign materials for electronics: A review o...

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2005 10th International Symposium on Advanced Packaging materials: Processes, Properties and Interfaces

作者： Lincoln, John D. Ogunseitan, Oladele A. Saphores, Jean-Daniel M. Schoenung, Julie M. Nixon, Hilary Shapiro, Andrew A. Dept. of Chemical Engineering and Materials Science University of California Irvine Program in Industrial Ecology Dept. of Environmental Health Science and Policy UCI Dept. of Planning Policy and Design UCI Dept. of Materials Science University of California Davis Jet Propulsion Laboratory California Institute of Technology Pasadena

ISBN: (纸本)0780390857

materials used in handheld consumer electronic devices (CEDs), such as cell phones or personal digital assistants, create environmental risks both during procurement and disposal. The increasing global demand for CEDs and recent legislative pressure motivate our review of alternative materials that could make CEDs more environmentally friendly. Hazardous materials considered include brominated flame retardants, lead-based solders, hexavalent chromium, and copper. We survey recent research in the development of environmentally benign replacement materials, provide a brief assessment of the potential environmental, industrial, and economic consequences of their substitution, and assess progress in their industrial application. Identifying appropriate environmentally benign replacement materials provides a starting point for developing environmentally friendly CED prototypes. © 2005 IEEE.

关键词： Consumer electronics

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Structure of A1N on Si (111) deposited with metal organic vapor phase epitaxy

Structure of A1N on Si (111) deposited with metal organic va...

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作者： Rehder, Eric Zhou, M. Zhang, L. Perkins, N.R. Babcock, S.E. Kuech, T.F. Materials Science Program University of Wisconsin - Madison Madison WI 53706 Dept. of Materials Science University of Wisconsin - Madison Madison WI 53706 Dept. of Chemical Engineering University of Wisconsin - Madison Madison WI 53706

The surface morphology and structure of AlN deposited by metal organic vapor phase epitaxy (MOVPE) on Si (111) at growth temperatures ranging from 825 to 1175°C was investigated. Transmission electron microscopy (TEM), reflection high energy electron diffraction (RHEED), atomic force microscopy (AFM), and secondary ion mass spectrometry (SIMS) techniques were used to study the resulting film structure. Growth at high temperatures but less than ∼1100°C, resulted in a wire texture with some degree of in-plane alignment with (0001)AlN//(111)si′, 〈10¯10〉AlN//〈211〉Si, and 〈1120〉AlN // 〈110〉Si. Deposition at temperatures greater than 1100°C results in single crystal films consisting of domains 60 nm across with an aspect ratio near unity. Growth below 1100°C leads to degraded crystal quality with the grains developing random rotational misalignments around the AlN [0001] axis. Growth at lower temperatures produces islands elongated along the [1120] direction. At the growth temperature of 825°C, the aspect ratio of the islands increased to 3 and a width of 25 nm. Cross-sectional TEM reveals that these islands are faceted due to slow growth on the {1¯101} planes.

关键词： Semiconducting aluminum compounds

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Computational modeling analysis for cell growth using Electric Cell-substrate Impedance Sensing (ECIS) based time series data

Computational modeling analysis for cell growth using Electr...

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2011 4th International Conference on Biomedical engineering and Informatics, BMEI 2011

作者： Yang, Jen-Ming Chen, Szi-Wen Yang, Jhe-Hao Wang, Jong-Shyan Dept. of Chemical and Materials Engineering Chang Gung University Tao-Yuan Taiwan Dept. of Electronic Engineering Chang Gung University Tao-Yuan Taiwan Dept. of Physical Therapy Graduate Institute of Rehabilitation Science Chang Gung University Tao-Yuan Taiwan

ISBN: (纸本)9781424493524

In this paper, a computational modeling analysis on cell growth is presented. This study aims at deriving a mathematical model for cell growth in order to understand, analyze and predict the complex mechanisms of cell biological systems. The proposed model was derived and validated using the practically measured cell growth curves produced by an existing novel on-line monitoring technique, referred to as Electric Cell-substrate Impedance Sensing (ECIS). The model in the form of a time response function may reflect the resistance change as a result of cell proliferation. Model parameters were then estimated by fitting the measured time series impedance data to the model itself. Preliminary analysis results indicated that the computational model proposed in this study possessed good potentials to modeling analysis on cell growth and thus could provide a hopeful start for subsequent quantitative investigations into cell dynamics. © 2011 IEEE.

关键词： Cell growth

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Californian households' willingness to pay for green PCs

Californian households' willingness to pay for green PCs

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2006 IEEE International Symposium on Electronics and the Environment

作者： Nixon, Hilary Saphores, Jean-Daniel M. Ogunseitan, Oladele A. Lincoln, John D. Shapiro, Andrew A. Irvine CA United States Program in Industrial Ecology Dept. of Environmental Health Science and Policy UCI Dept. of Chemical Engineering and Materials Science UCI Jet Propulsion Laboratory California Institute of Technology Pasadena CA United States

ISBN: (纸本)1424403510

Consumer electronic devices (CEDs) contain toxic materials including heavy metals and brominated flame retardants that can pose a threat to public and environmental health if improperly disposed Recent legislation enacted in the European Union and introduced in California bans the sale of CEDs containing these toxics. As a result, manufacturers need to change the design of their products to reduce the environmental impact, yet little is known about consumer willingness to pay for these "green" products. We estimate willingness to pay higher prices for environmentally friendly desktop computers by California households and find that most are willing to pay only 1% higher retail prices for "green" PCs. Other key demographic characteristics include age, income, and education. Environmental attitudes and beliefs are also important. © 2006 IEEE.

关键词： Personal computers

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Microstructural Variations in Sol-Gel Processed Lithium Niobate thin Films

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MRS Online Proceedings Library 1992年第1期271卷 377-382页

作者： Vikram Joshi Grace K. Goo Martha L. Mecartney Dept. of Chemical Engineering and Materials Science University of Minnesota Minneapolis USA Materials Science and Engineering Program University of California at Irvine Irvine USA

LiNbO3 thin films were deposited by dip coating Li-Nb alkoxide solutions onto silicate glass substrates and single crystal sapphire substrates. Microstructural characterization using transmission electron microscopy (TEM) showed significant differences in film microstructures dependent on the initial solution chemistry. Fully crystalline films could be obtained after heat treatments at 400°C in air. The grain size and porosity were dependent on the amount of water of hydrolysis in the alkoxide sol. The higher the water content, the larger the grain size and porosity. Crystallization studies of nucleation and growth of LiNbO3 for films heat treated from 300–600°C indicated that higher temperatures or long soak times generated large facetted grain structures. Single crystalline films were obtained on (0001) sapphire substrates.

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High Resolution X-Ray Diffraction Analysis of Gallium Nitride Grown on Sapphire by Halide Vapor Phase Epitaxy

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MRS Online Proceedings Library 2011年第1期423卷 239-244页

作者： R.J. Matyi D. Zhi N.R. Perkins M.N. Horton T.F. Kuech Dept. of Materials Science and Engineering University of Wisconsin Madison USA Materials Science Program University of Wisconsin Madison USA Dept. of Chemical Engineering University of Wisconsin Madison USA

We report a structural analysis of GaN layers with thicknesses ranging from 10 u,m to 250 µm which have been grown on sapphire substrates by halide vapor phase epitaxy (HVPE). The effect of growth rate during HVPE growth has also been examined. The growth was performed using GaCl and ammonia as reactants; growth rates in excess of 90 u.m/hr have been achieved. The structural characteristics of these layers have been performed wit'i high resolution x-ray diffractometry. Longitudinal scans parallel to the GaN [0002] direction, transverse scans perpendicular to the [0002], and reciprocal space maps of the total diffracted intensity have been obtained from a variety of GaN layers. The transverse scans typically show broad rocking curves with peak breadths of several hundreds of arcseconds. In contrast, the longitudinal scans (or “9/20 scans") which are sensitive only to strains in the GaN layers (and not their mosaic distributions) showed peak widths that were at least an order of magnitude smaller and in some cases were as narrow as 16 arcseconds. These results suggest that the defect structure of the GaN layers grown by HVPE is dominated by a dislocation-induced mosaic distribution, with the effects of strain in these materials being negligible in comparison.

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