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Broad and Positive Conversion Efficiency in Raman-Assisted Fiber Ring Laser

Broad and Positive Conversion Efficiency in Raman-Assisted F...

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International RF and Microwave Conference, RFM

作者： Ummi Supya Ismail Muhammad Zamzuri Abdul Kadir Zainuddin Rahman Mohd. Adzir Mahdi Sahbudin Shaari TMR&D SDN. BHD UPM-MTDC Tech Serdang Malaysia TMR&D SDN. BHD Idea Tower Incubation Center One Serdang Department of Computer and System Engineering Faculty of Engineering UPM Serdang Malaysia Dept. of Computer and System Eng. UPM Serdang Department of Electrical Electronics & System Engineering UKM Malaysia Photonic Technology Laboratory Electronics & System Eng.

One of many fiber non-linear effects is a four-wave mixing (FWM) phenomenon that is resonant when phase matching condition is satisfied. It only occurs for particular combinations of fiber dispersion and signal frequencies. In particular, phase matching is achieved for signals with very similar frequencies propagating near the zero dispersion waveleng.h of the fiber. This paper proposes optical waveleng.h conversion based on FWM assisted by Raman amplification. The conversion bandwidth extends to 125nm, the widest yet reported for waveleng.h conversion using highly non-linear fiber (HNLF) irrespective to the conversion efficiency value. The 1R property defined when conversion efficiency (CE) is positive was found to cover an area of 19.5nm

关键词： Fiber lasers Ring lasers Optical frequency conversion Optical waveleng.h conversion Waveleng.h conversion Four-wave mixing Resonance Optical propagation Stimulated emission Bandwidth

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Transparent management of reconfigurable hardware in embedded operating systems

Transparent management of reconfigurable hardware in embedde...

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IEEE computer Society Annual Symposium on VLSI

作者： K. Kociuszkiewicz F. Morgan K. Kepa Dept. of Electron. Eng. Ireland Nat. Univ. Galway Ireland Electronic Engineering Department National University of Ireland Galway Computer Architecture Group Wroclaw University of Technology Poland

A reconfigurable system-on-chip (rSoC) architecture incorporating embedded uClinux operating system and multiple co-processing nodes has been reported (Williams and Bergmann, 2004). Our paper extends this platform to incorporate transparent management of reconfigurable hardware resources. This provides a convenient and flexible means for rapid application development of rSoC systems. The co-processor allocation and task management system is described. Details of the implementation are also included

关键词： Hardware Operating systems Application software Coprocessors computer architecture Pipelines Parallel processing Kernel Technology management eng.neering management

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Improvement of authenticated encryption schemes with message linkages for message flows

Improvement of authenticated encryption schemes with message...

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作者： Hwang, Min-Shiang Lo, Jung-Wen Hsiao, Shu-Yin Chu, Yen-Ping Dept. of Mgmt. Information System National Chung Hsing University 250 Kuo Kuang Road Taichung 402 Taiwan Department of Information Management Natl. Taichung Inst. of Technology 129 Sec. 3 Sanmin Rd. Taichung 404 Taiwan Institute of Computer Science National Chung Hsing University 250 Kuo Kuang Road Taichung 402 Taiwan Grad. Inst. Networking Commun. Eng. Chaoyang University of Technology 168 Gifeng E. Rd. Wufeng Taichung County 413 Taiwan

An authenticated encryption scheme provides a mechanism of signing and encrypting simultaneously, and furthermore, the receiver can verify and decrypt the signature at the same time. Tseng.et al. proposed two efficiently authenticated encryption schemes which can check the validity of the sent data before message recovery, but in fact their schemes cannot achieve completely the function. In this article, we point out the flaw and propose an improved scheme of revision. Copyright © 2006 The Institute of Electronics, Information and Communication eng.neers.

关键词： Cryptography

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Very high κ and high density TiTaO MIM capacitors for analog and RF applications

Very high κ and high density TiTaO MIM capacitors for analo...

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2005 Symposium on VLSI Technology

作者： Chiang, K.C. Chin, Albert Lai, C.H. Chen, W.J. Cheng. C.F. Hung, B.F. Liao, C.C. Dept. of Electronics Eng. Nat'l Chiao-Tung Univ. Univ. System of Taiwan Hsinchu Taiwan SNDL Dept. of Electrical and Computer Eng. National Univ. of Singapore Singapore Singapore Graduate Inst. of Materials Eng. National PT University of Science and Technology Taiwan Taiwan

For the first time, high density (10.3 fF/μm2), low voltage linearity (α=89 ppm/V2) and small leakage current (1.2×10-8 A/cm2 or 5.8 fA/[pF&middotV] at 2V) meet all the ITRS requirements of analog capacitor... 详细信息

ISBN: (纸本)4900784001

For the first time, high density (10.3 fF/μm2), low voltage linearity (α=89 ppm/V2) and small leakage current (1.2×10-8 A/cm2 or 5.8 fA/[pF·V] at 2V) meet all the ITRS requirements of analog capacitor at year 2018. These are achieved by novel high-κ TiTaO (κ=45) and high work-function Ir capacitor, which further improve to very high 23 fF/μm2 density and low 81 ppm/V2 linearity for higher speed analog/RF ICs at IGHz, using the fast α decay mechanism with increasing frequency.

关键词： MIM devices

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Lanthanide and Ir-based dual metal-Gate/HfAlON CMOS with large work-function difference

Lanthanide and Ir-based dual metal-Gate/HfAlON CMOS with lar...

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IEEE International Electron Devices Meeting, 2005 IEDM

作者： Yu, D.S. Chin, Albert Wu, C.H. Li, M.-F. Zhu, C. Wang, S.J. Yoo, W.J. Hung, B.F. McAlister, S.P. Dept. of Electronics Eng. Nat'l Chiao-Tung Univ. Univ. System of Taiwan Hsinchu Taiwan SNDL Dept. of Electrical and Computer Eng. National Univ. of Singapore Singapore Singapore Dept. of Electrical Eng. Nat'l Cheng Kung Univ. Tainan Taiwan National Research Council of Canada Ottawa Canada

ISBN: (纸本)078039268X

Metallic diffusion through high-k HfO2, caused by high temperature metal-nitride decomposition, was reduced by using robust HfAlON. Useful dual effective work-function (φm,eff) of 4.25 and 5.15 eV are obtained in TaTb0.2N/HfAlON and Ir/HfAlON at 1.7nm EOT. Good dual φm,eff of 4.15 and 4.9 eV are also obtained in Yb xSi/HfAlON and IrxSi/HfAlON FUSI-gates by reduced metal diffusion at lower temperature. © 2005 IEEE.

关键词： Rare earth elements

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Strain-induced very low noise RF MOSFETs on flexible plastic substrate

Strain-induced very low noise RF MOSFETs on flexible plastic...

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2005 Symposium on VLSI Technology

作者： Kao, H.L. Chin, Albert Hung, B.F. Lai, J.M. Lee, C.F. Li, M.-F. Samudra, G.S. Zhu, C. Xia, Z.L. Liu, X.Y. Kang, J.F. Dept. of Electronics Eng. Nat'l Chiao-Tung Univ. Univ. System of Taiwan Hsinchu Taiwan SNDL Dept. of Electrical and Computer Eng. National Univ. of Singapore Singapore Singapore Institute of Microelectronics Peking University Beijing 100871 China

ISBN: (纸本)4900784001

Using microstrip line design to screen substrate resistance generated RF noise, very low 1. l dB min. noise figure (NFmin) and high 12 dB associate gain are measured at 10 GHz of 0.18 μm MOSFET on plastic without de-embedding. The die on plastic was thinned to 30μm that allows applying uniaxial strain to further lower the 10 GHz NFmin to only 0.92 dB and comparable well with the 0.13 μm and 90nm nodes MOSFETs.

关键词： MOSFET devices

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Low voltage high speed SiO2/AlGaN/AlLaO3/TaN memory with good retention

Low voltage high speed SiO2/AlGaN/AlLaO3/TaN memory with goo...

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IEEE International Electron Devices Meeting, 2005 IEDM

作者： Chin, Albert Laio, C.C. Chen, C. Chiang, K.C. Yu, D.S. Yoo, W.J. Samudra, G.S. Wang, T. Hsieh, I.J. McAlister, S.P. Chi, C.C. Dept. of Electronics Eng. Nat'l Chiao-Tung Univ. Univ. System of Taiwan Hsinchu Taiwan SNDL Dept. of Electrical and Computer Eng. National Univ. of Singapore Singapore Singapore Department of Electric Eng. Chung Hua University Hsinchu Taiwan National Research Council of Canada Ottawa Canada Dept. of Physics National Tsing Hua Univ. Hsinchu Taiwan

ISBN: (纸本)078039268X

To improve trapping using deeper well AlGaN (Χ=3.8eV), lower voltage drop in high-κ AlLaO3 barrier (κ=23), and smaller erase current by large ΔEc of AlLaO3/TaN, the SiO 2/AlGaN/AlLaO3/TaN devices show good 85°C memory integrity of low ±10V 1ms P/E, large 3.9V initial ΔVth and 2.4V extrapolated 10-year retention. A fast 100μs P/E of ±11V still gives 3.0V initial ΔVth and 1.6V 10-year retention. © 2005 IEEE.

关键词： Data storage equipment

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Modeling RF MOSFETs after electrical stress using low-noise microstrip line layout

Modeling RF MOSFETs after electrical stress using low-noise ...

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2005 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium - Digest of Papers

作者： Kao, H.L. Chin, Albert Lai, J.M. Lee, C.F. Chiang, K.C. McAlister, S.P. Dept. of Electronics Eng. Nat'l Chiao-Tung Univ. Univ. System of Taiwan Hsinchu Taiwan SNDL Dept. of Electrical and Computer Eng. National University of Singapore Singapore 119260 Singapore Nano Science Tech. Center Univ. System of Taiwan-NCTU National Research Council of Canada Ottawa Canada

A novel microstrip line layout is developed to direct measure the min. noise figure (NFmin) accurately instead of the complicated de-embedding procedure in conventional CPW line. Very low NFmin of 1.05 dB at 10 GHz is directly measured in 16 gate fingers 0.18μm MOSFETs without any de-embedding. Based on the accurate NFmin measurement, we have developed the self-consistent DC, S-parameters and NFmin model to predict device characteristics after the continuous stress with good accuracy. © 2005 IEEE.

关键词： MOSFET devices

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Novel SiO2/AlN/HfAlO/IrO2 memory with fast erase, large ΔVth and good retention

Novel SiO2/AlN/HfAlO/IrO2 memory with fast erase, large ΔVt...

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2005 Symposium on VLSI Technology

作者： Lai, C.H. Chin, Albert Chiang, K.C. Yoo, W.J. Cheng. C.F. McAlister, S.P. Chi, C.C. Wu, P. Dept. of Electronics Eng. Nat'l Chiao-Tung Univ. Univ. System of Taiwan Hsinchu Taiwan SNDL Dept. of Electrical and Computer Eng. National Univ. of Singapore Singapore Singapore National Research Council of Canada Ottawa Canada Dept. of Physics National Tsing Hua Univ. Hsinchu Taiwan

ISBN: (纸本)4900784001

Using the strong trapping capability of novel AlN (κ=10), low voltage drop in high-κ layers and high workfunction IrO2 with low leakage current, the SiO2/AlN/HfAlO(κ=17)/IrO2 device shows good 85°C memory integrity of fast 100μs erase, large 3.7V ΔVth and 1.9V extrapolated memory window for 10-year retention at low 13V program/erase. These increase to 5.5V ΔVth and 3.4V for 85°C 10-year retention at 1ms erase.

关键词： Data storage equipment

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Long retention and low voltage operation using IrO2/HfAlO/HfSiO/ HfAlO gate stack for memory application

Long retention and low voltage operation using IrO2/HfAlO/Hf...

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IEEE International Electron Devices Meeting, 2005 IEDM

作者： Wang, Y.Q. Singh, P.K. Yoo, W.J. Yeo, Y.C. Samudra, G. Chin, Albert Hwang, W.S. Chen, J.H. Wang, S.J. Kwong, D.-L. Silicon Nano Device Laboratory Dept. of Electrical and Computer Eng. National University of Singapore Singapore Singapore Dept. of Electro. Eng. Nat'1 Chiao Tung Univ. Univ. System of Taiwan Hsinchu Taiwan Institute of Mat'l. Res. and Eng. Singapore Singapore Institute of Microelectronics Singapore Singapore Univ. of Texas Austin United States

ISBN: (纸本)078039268X

We demonstrate electrical properties of an advanced memory structure with high-k dielectric stack of HfAlO/HfSiO/HfAlO and p-type metal gate IrO 2. Combining advantages of high-k HfAlO, good trapping capability of HfSiO, and high work function of the IrO2 gate, we were able to attain much better retention with 10-year ΔVth decay ratio within 18%, higher erasing speed with ΔVth, of 3V within 0.5ms at Vg = -12V, and lower operation voltage as well as lower reading voltage, compared to other contending device structures. © 2005 IEEE.

关键词： Gates (transistor)

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