It has long been recognized that thin film polycrystalline microstructures are determined by the thermodynamics and kinetics associated with physical vapor deposition, but it is quite process dependent and not easily ...
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It has long been recognized that thin film polycrystalline microstructures are determined by the thermodynamics and kinetics associated with physical vapor deposition, but it is quite process dependent and not easily quantified. We have examined the microstructure in polycrystalline Au films obtained by pulse laser deposition (PLD) under various conditions and interpret the results in terms of three fundamental parameters common to all physical vapor deposition: Flux kinetic energy, substrate temperature, and deposition rate. With this model, it is predicted that nanocrystalline films are formed in the limits of low temperature, flux, and high deposition rate. The deposited films are analyzed with X-ray diffraction and SEM to determine texture and grain morphology, which are found to fit well within in the process maps.
An accurate finite element analysis (FEA) of the precision glass molding (PGM) process requires knowledge of the heat flux between the glass workpiece and the mold material;one major source of error in these models is...
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Flexible displays are enabled by electro-optic devices integrated with an active matrix backplane which must have its own power system. Powered thin film transistors in each display pixel must switch and power an elec...
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ISBN:
(纸本)1893580172
Flexible displays are enabled by electro-optic devices integrated with an active matrix backplane which must have its own power system. Powered thin film transistors in each display pixel must switch and power an electro-optic device. Other applications include integrated analog organic electronics, reconfigurable flexible antennas, as well as flexible explosive detection. Micro autonomous sensor systems must have the power system integrated with lightweight flexible electronics. The present paper reports the achievement of an integrated power distribution system for flexible electronics based on a PEM flexible organic polymer foil substrate (Kapton) and a-Si:H/a-SiGe:H thin film n and p MOSFETs, integrated with a thin film RuOx/Zn/Pb power cell. Such a flexible substrate has a glass transition temperature of 320 C which will allow all standard semiconductor processes to be implemented. The limited processing temperatures introduces residual stresses and subsequent mechanical fatigue problems which must be resolved.
Modeled grain structures of normalized carbon steels using voronoi tessellation is reported in this work. Three stages of programming were used in modeling the microstructures. The first stage was iteration of the vor...
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Modeled grain structures of normalized carbon steels using voronoi tessellation is reported in this work. Three stages of programming were used in modeling the microstructures. The first stage was iteration of the voronoi cells in order to obtain equivalent grain size with experimental specimens. In the second stage, the pearlite phase was introduced using the lever rule represented by a plot of random points. The third layer was modeled to reveal the grain boundaries of the carbon steels. The values of the grain sizes of modeled microstructures showed good agreement with experimental values. The study has shown that the microstructures can be modeled fairly accurately thus enabling a fairly quick export of geometric models on to some other finite element packages for analysis of stress-strain effect on microstructure and generally a stressmicrostructure response could be determined.
Single crystal heteroepitaxial ferroelectric films are desired for non-linear optical applications to maximize the electro-optic coefficient and minimize waveguide losses. In this study, lithium tantalate films were d...
Single crystal heteroepitaxial ferroelectric films are desired for non-linear optical applications to maximize the electro-optic coefficient and minimize waveguide losses. In this study, lithium tantalate films were deposited on (0001) sapphire from lithium hexaethoxytantalate by chemical beam epitaxy. Characterization showed that films had nearly stoichiometric composition, epitaxial orientation, and a high degree of crystalline perfection. However, the films exhibited high optical waveguide losses. Additional characterization by TEM revealed that the films had a two dimensional grain structure with epitaxial variants related by translation and a twin orientation to the substrate. To better understand the nature of the heteroepitaxial growth of lithium tantalate on (0001) sapphire, a model was developed to explain the observed epitaxial orientations, misfit dislocation networks, and grain boundary structures of lithium tantalate on (0001) sapphire.
We report a structural analysis of GaN layers with thicknesses ranging from 10 u,m to 250 µm which have been grown on sapphire substrates by halide vapor phase epitaxy (HVPE). The effect of growth rate during HVP...
We report a structural analysis of GaN layers with thicknesses ranging from 10 u,m to 250 µm which have been grown on sapphire substrates by halide vapor phase epitaxy (HVPE). The effect of growth rate during HVPE growth has also been examined. The growth was performed using GaCl and ammonia as reactants; growth rates in excess of 90 u.m/hr have been achieved. The structural characteristics of these layers have been performed wit'i high resolution x-ray diffractometry. Longitudinal scans parallel to the GaN [0002] direction, transverse scans perpendicular to the [0002], and reciprocal space maps of the total diffracted intensity have been obtained from a variety of GaN layers. The transverse scans typically show broad rocking curves with peak breadths of several hundreds of arcseconds. In contrast, the longitudinal scans (or “9/20 scans") which are sensitive only to strains in the GaN layers (and not their mosaic distributions) showed peak widths that were at least an order of magnitude smaller and in some cases were as narrow as 16 arcseconds. These results suggest that the defect structure of the GaN layers grown by HVPE is dominated by a dislocation-induced mosaic distribution, with the effects of strain in these materials being negligible in comparison.
Surface roughening associated with strain relaxation of Si1-xGex films grown epitaxially on (100) Si substrates has been investigated using transmission electron microscopy, atomic force microscopy and x-ray diffracti...
Surface roughening associated with strain relaxation of Si1-xGex films grown epitaxially on (100) Si substrates has been investigated using transmission electron microscopy, atomic force microscopy and x-ray diffraction. Epitaxial films 100 Å in thickness and containing 18% Ge, which are subcritical with respect to the formation of misfit dislocations, show strain relaxation through surface roughening on annealing at 700 °C. Enhanced surface grooves aligned along <100> directions are observed in films annealed at 850 °C. Strain relaxation as measured by x-ray diffraction is significantly greater at the higher temperature. Prolonged anneals at 850 °C also result in islanding. The surface roughening processes have also been studied in subcritical films with 15% Ge at 900 °C. These films also show enhanced grooving aligned along <100> directions. These observations are consistent with an anisotropic elastic analysis which indicates that grooving should occur preferentially along <100> directions. Intermixing effects in these samples have also been investigated through dept. profiling using Auger Electron Spectroscopy. In addition to the above subcritical films, other films with 18% and 22% Ge and supercritical thicknesses have also been studied. For these films, surface grooving is observed along <110> directions, which suggests that these grooves are related to the formation of misfit dislocation networks. The role of these surface roughening processes in the nucleation of dislocations has also been explored.
Symmetric diblock copolymers undergo a disorder to order transition below a microphase separation transition temperature. In this temperature range the structure is characterized by alternating lamellae of thickness L...
Symmetric diblock copolymers undergo a disorder to order transition below a microphase separation transition temperature. In this temperature range the structure is characterized by alternating lamellae of thickness L. In thin film geometries, the lamellae are oriented normal to the substrate if there is a preferential interaction between either of the block constituents and the substrate/copolymer or copolymer/vacuum interfaces. Depending on the relation between the film thickness and L, the topography of the film might comprise of holes, islands or spinodal-like structures. We show that in a polystyrene-b-poly(methyl methacrylate) diblock copolymer of molecular weight 20, 000 g/mol, above the microphase separation transition temperature, the topography of the film depends on the thickness. A heirarchy of bicontinuous patterns and holes is observed with increasing film thickness for films thinner than 35 nm.
The fracture toughness of interface reinforced with dps-b-dpmma copolymer between immiscible polymers of PS and PMMA is tested by asymmetric double cantilever beam. The local deformation field at the interfacial crack...
The fracture toughness of interface reinforced with dps-b-dpmma copolymer between immiscible polymers of PS and PMMA is tested by asymmetric double cantilever beam. The local deformation field at the interfacial crack tip is determined by the technique of SIEM. Normal and tangential crack opening displacements are calculated. A weak singularity is shown to exist near crack tip. Direct observation on the fracture process inside an environmental scanning electron microscope shows the large effect of mode mixity.
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