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2011 - International Conference on Signal Processing, Communication, Computing and Networking Technologies, ICSCCN-2011

作者： Rajabi, Saba Orouji, Ali A. Moghadam, Hamid Amini Mahabadi, S.E. Jamali Fathipour, Morteza Electrical Engineering Department Semnan University Semnan Iran Device Modeling and Simulation Lab. Electrical Engineering Department Tehran University Tehran Iran

ISBN: (纸本)9781612846538

In this paper, we have investigated the effectiveness of employing the drain field-plate technique to enhance the breakdown voltage of single source field-plate (SSFP) AlGaN/GaN power high electron mobility transistors (HEMTs). A systematic procedure is provided for designing this new double drain and source field-plate (DDSFP) structure, using two dimensional simulation to achieve the maximum improvement in the drain-source current (IDS) and breakdown voltage (BV). It is found that significantly higher BV and IDS can be achieved by just optimizing the thickness of the passivation layer Si 3N4 beneath the field plates and the length of field plates connected to the source and drain. The effects of the substrate superjunction layers thickness and the gate recess depth on the BV are also studied. © 2011 IEEE.

关键词： High electron mobility transistors

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A novel power high electron mobility transistor with partial stepped recess in the drain access region for performance improvement

A novel power high electron mobility transistor with partial...

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2011 - International Conference on Signal Processing, Communication, Computing and Networking Technologies, ICSCCN-2011

ISBN: (纸本)9781612846538

In this letter, we proposed a new power High Electron Mobility Transistor (HEMT) with partial stepped recess in the drain access region. This approach represents a new way to increase the breakdown voltage by 100%, which is very important in higher voltage applications. The use of drain access region recesses allows a 43% decrease of the peak electric field and only a 1.91% increase of the drain access resistance which is negligible. The proposed structure shows an improvement in the maximum oscillation frequency (f max) and cut-off frequency (fT) over the conventional structure. © 2011 IEEE.

关键词： High electron mobility transistors

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A novel AlGaN/GaN/AlGaN double-heterojunction high electron mobility transistor for performance improvement

A novel AlGaN/GaN/AlGaN double-heterojunction high electron ...

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2011 - International Conference on Signal Processing, Communication, Computing and Networking Technologies, ICSCCN-2011

ISBN: (纸本)9781612846538

In this paper, we present an enhancement of breakdown voltage in AlGaN/GaN/AlGaN double-heterojunction high-electron-mobility-transistor devices by introducing a magnesium doping layer in AlGaN buffer layer under the 2DEG channel. The optimized electron confinement and mitigated electric field peak under the drain side of the gate in DH-HEMT along with more evenly distributed electric field due to the presence of a charge balanced magnesium doping layer result in significant breakdown voltage improvement and subthreshold gate and drain leakage currents suppression. The introduced magnesium doping layer acts as a floating field plate. By optimizing the length of this float field plate, the breakdown voltage will increase by 90.5%, which is very important in higher voltage applications. This approach also allows a 33% decrease of the peak electric field under the drain side edge of the gate while the ON-state resistance is negligibly increased. © 2011 IEEE.

关键词： High electron mobility transistors

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A novel power High Electron Mobility Transistor with partial stepped recess in the drain access region for performance improvement

A novel power High Electron Mobility Transistor with partial...

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International Conference on Signal Processing, Communication, Computing and Networking Technologies

作者： Saba Rajabi Ali A. Orouji Hamid Amini Moghadam S. E. Jamali Mahabadi Morteza Fathipour Semnan University Semnan IR Electrical Engineering Department Semnan University Semnan Iran Device Modeling and Simulation Lab Tehran University Tehran Iran

In this letter, we proposed a new power High Electron Mobility Transistor (HEMT) with partial stepped recess in the drain access region. This approach represents a new way to increase the breakdown voltage by 100%, which is very important in higher voltage applications. The use of drain access region recesses allows a 43% decrease of the peak electric field and only a 1.91% increase of the drain access resistance which is negligible. The proposed structure shows an improvement in the maximum oscillation frequency (f max ) and cut-off frequency (f T ) over the conventional structure.

关键词： HEMTs MODFETs Gallium nitride Switches Aluminum gallium nitride Semiconductor device reliability

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Improvement of short channel effects in cylindrical strained silicon nanowire transistor

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World Academy of Science, Engineering and Technology 2010年 69卷 467-470页

作者： Karimi, Fatemeh Fathipour, Morteza Ghanatian, Hamdam Fathipour, Vala Islamic Azad University Central branch Tehran Iran Device and Simulation Lab. IEEE Department of Electrical and Computer Engineering University of Tehran P.O. Box 14395-515 Tehran Iran Device Modeling and Simulation Laboratory Department of Electrical and Computer Engineering University of Tehran Iran

In this paper we investigate the electrical characteristics of a new structure of gate all around strained silicon nanowire field effect transistors (FETs) with dual dielectrics by changing the radius (RSiGe) of silicon-germanium (SiGe) wire and gate dielectric. Indeed the effect of high-κ dielectric on Field Induced Barrier Lowering (FIBL) has been studied. Due to the higher electron mobility in tensile strained silicon, the n-type FETs with strained silicon channel have better drain current compare with the pure Si one. In this structure gate dielectric divided in two parts, we have used high-κ dielectric near the source and low-κ dielectric near the drain to reduce the short channel effects. By this structure short channel effects such as FIBL will be reduced indeed by increasing the RSiGe, ID-VD characteristics will be improved. The leakage current and transfer characteristics, the threshold-voltage (Vt), the drain induced barrier height lowering (DIBL), are estimated with respect to, gate bias (VG), RSiGe and different gate dielectrics. For short channel effects, such as DIBL, gate all around strained silicon nanowire FET have similar characteristics with the pure Si one while dual dielectrics can improve short channel effects in this structure.

关键词： Gate dielectrics

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The analysis of photoconductive semiconductor switch operation in the frequency of 10GHz

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World Academy of Science, Engineering and Technology 2010年 69卷 458-462页

作者： Fathipour, Morteza Anousheh, Seyed Nasrolah Davoudi, Kaveh Ghiafeh Fathipour, Vala Device and Simulation Lab IEEE Department of Electrical and Computer Engineering University of Tehran P.O. Box 14395-515 Tehran Iran Department of Electrical and Computer Engineering Islamic Azad University-Central Tehran Branch Tehran Iran Device Modeling and Simulation Laboratory Department of Electrical and Computer Engineering University of Tehran Iran

A device analysis of the photoconductive semiconductor switch is carried out to investigate distribution of electric field and carrier concentrations as well as the current density distribution. The operation of this device was then investigated as a switch operating in X band. It is shown that despite the presence of symmetry geometry, switch current density of the on-state steady state mode is distributed asymmetrically throughout the device.

关键词： Photoconductivity

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AC analysis of UMOSFET ACCUFET

AC analysis of UMOSFET ACCUFET

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2009 International Semiconductor device Research Symposium, ISDRS '09

作者： Peyvast, N. Fathipour, M. Device and Process Modeling and Simulation Lab. School of Electrical and Computer Eng. University of Tehran Kargar Ave. Tehran Iran

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The impact of structural parameters on the electrical characteristics of GAA silicon nanowire transistor

The impact of structural parameters on the electrical charac...

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2009 International Semiconductor device Research Symposium, ISDRS '09

作者： Fathipour, M. Karimi, F. Hosseini, R. Device Modeling and Simulation Lab. ECE Dept. University of Tehran Tehran Iran Islamic Azad University Central Branch Tehran Iran Islamic Azad University Science and Research Branch Tehran Iran

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Improving performance in single field plate power High Electron Mobility Transistors (HEMTs) based on AlGaN/GaN

Improving performance in single field plate power High Elect...

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Asia Symposium on Quality Electronic Design, ASQED

作者： Morteza Fathipour Negin Peyvast Reza Azadvari Device Modeling and Simulation Lab School of Electrical and Computer Engineering University of Tehran Iran Central branch & Tehran Islamic Azad University Iran

In this paper we have investigated the effectiveness of employing the single field-plate (SFP) technique to enhance the breakdown voltage (BV) of AlGaN/GaN power high electron mobility transistors (HEMTs).A systematic procedure is provided for designing the SFP device, using two dimensional (2-D) simulation to obtain the maximum improvement in the drain-source current (I DS ) and to achieve maximum breakdown voltage. It is found that significantly higher breakdown voltages and I DS can be achieved by just raising the thickness of the passivation layer Si 3 N 4 beneath SFP (t) and raising SFP length (L sfp ) between the source and drain. We demonstrate that when a single field-plate connected to the source is employed, both breakdown voltage and I DS can be enhanced by optimizing the passivation layer Si 3 N 4 thickness beneath the SFP as well as the SFP geometry.

关键词： HEMTs MODFETs Aluminum gallium nitride Gallium nitride Passivation Intrusion detection Frequency Voltage Interface states Computer simulation

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An estimator for the MEMS capacitive accelerometer based on adaptive back stepping theory

An estimator for the MEMS capacitive accelerometer based on ...

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International Conference on Microelectronics, MIEL

作者： A. Farrokh Payam F. Arab Hassani M. Fathipour Device Modeling and Simulation Lab ECE Department University of Tehran Iran

This paper presents a novel MEMS capacitive accelerometer which employs an estimator. This scheme is realized by adding an adaptive nonlinear observer to the conventional PID closed loop system. This estimator is used for online estimation of the parameter variations for MEMS accelerometers and gives the capability of self testing to the system. The performance of the proposed hybrid controller investigated here is validated by computer simulation.

关键词： Micromechanical devices Accelerometers Fingers Damping Automatic testing Fabrication Control systems Adaptive control Springs Signal to noise ratio

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