In this paper, we have shown that off-state current in the tunneling field effect transistor (TFET) can be reduced dramatically by using an ¿asymmetric¿ gate oxide thickness and employing gate work function ...
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In this paper, we have shown that off-state current in the tunneling field effect transistor (TFET) can be reduced dramatically by using an ¿asymmetric¿ gate oxide thickness and employing gate work function engineering. This procedure does not affect driving current while reduces I off by 5 orders magnitude, hence obtained the noticeable of I on /I off ratio. We discuss optimization of I on /I off ratio and investigate the effect of scaling on the I on /I off ratio in the proposed structure.
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