检索结果-内蒙古大学图书馆

您好，读者！请登录

内蒙古大学图书馆

首页
概况
党建
资源
服务
科研支持
- 论文收录引用证明
- 科技查新
知识产权
档案馆
帮助

咨询与建议

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

您的常用邮箱：*

您的手机号码：*

问题描述：

当前已输入0个字，您还可以输入200个字

全部搜索
期刊论文
图书
学位论文
标准
纸本馆藏
外文资源发现
数据库导航
超星发现

高级检索

时间限定

出版年份：

文献类型

图书期刊文献学位论文多媒体

馆藏选择

电子馆藏纸本馆藏

核心期刊

全部期刊 SCI 收录期刊 SSCI 收录期刊 EI 收录期刊 CSCD 收录期刊 CSSCI 收录期刊

语言

中文英文

文献类型

期刊文献图书学位论文标准纸本馆藏

帮助

文字说明：

T=题名（书名、题名），A=作者（责任者），K=主题词，P=出版物名称，PU=出版社名称，O=机构（作者单位、学位授予单位、专利申请人），L=中图分类号，C=学科分类号，U=全部字段，Y=年（出版发行年、学位年度、标准发布年）

检索规则说明：

AND代表“并且”；OR代表“或者”；NOT代表“不包含”；(注意必须大写,运算符两边需空一格)

检索范例：

范例一：(K=图书馆学 OR K=情报学) AND A=范并思 AND Y=1982-2016
范例二：P=计算机应用与软件 AND (U=C++ OR U=Basic) NOT K=Visual AND Y=2011-2016

分类表

所选分类

>> <<

限定检索结果

文献类型

11 篇 会议
2 篇 期刊文献

馆藏范围

13 篇 电子文献
0 种 纸本馆藏

日期分布

学科分类号

4 篇 工学
- 1 篇 电气工程
- 1 篇 电子科学与技术（可...
- 1 篇 信息与通信工程
- 1 篇 控制科学与工程
- 1 篇 计算机科学与技术...
- 1 篇 土木工程
- 1 篇 生物工程
1 篇 理学
- 1 篇 数学
- 1 篇 生物学
1 篇 管理学
- 1 篇 管理科学与工程(可...

主题

1 篇 runtime
1 篇 next generation ...
1 篇 deep learning
1 篇 frequency modula...
1 篇 temperature meas...
1 篇 computer archite...
1 篇 filtering
1 篇 prototypes
1 篇 efficiency
1 篇 neural networks
1 篇 power system mea...
1 篇 random access me...
1 篇 sic
1 篇 servers
1 篇 switches
1 篇 program processo...
1 篇 mosfet
1 篇 high-voltage tec...
1 篇 voltage measurem...
1 篇 voice activity d...

机构

3 篇 power and sensor...
2 篇 power and sensor...
1 篇 power and sensor...
1 篇 faculty of elect...
1 篇 power & sensor s...
1 篇 faculty of elect...
1 篇 infineon technol...
1 篇 division of elec...
1 篇 power and sensor...
1 篇 dpia - universit...
1 篇 division of powe...
1 篇 centre for tacti...
1 篇 infineon technol...
1 篇 power and sensor...
1 篇 electronic techn...
1 篇 division of powe...
1 篇 technische unive...
1 篇 infineon technol...
1 篇 electronics tech...
1 篇 department of po...

作者

2 篇 ralf siemieniec
2 篇 richard gaggl
2 篇 dietmar straeuss...
2 篇 eric gutierrez
2 篇 yukai shen
1 篇 federica benedin...
1 篇 andrea baschirot...
1 篇 cinik sadik
1 篇 siemieniec ralf
1 篇 carlos perez
1 篇 pignatelli alber...
1 篇 alberto pignatel...
1 篇 alessandro ferra...
1 篇 mayr christian g...
1 篇 elvir kahrimanov...
1 篇 david laforet
1 篇 albert claudi
1 篇 miodrag nikolić
1 篇 chen wei-ju
1 篇 o. haeberlen

语言

13 篇 英文

检索条件"机构=Division of Power and Sensor Systems Infineon Technologies"

共 13 条记录，以下是1-10 订阅

全选清除本页清除全部题录导出标记到"检索档案"

详细简洁

排序：

New 400 V SiC MOSFET and its use in Multi-Level Applications

New 400 V SiC MOSFET and its use in Multi-Level Applications

引用

2024 Energy Conversion Congress and Expo Europe, ECCE Europe 2024

作者： Siemieniec, Ralf Wattenberg, Martin Kasper, Matthias Bhandari, Jyotshna Chen, Wei-Ju Shim, Heejae Pignatelli, Alberto Jagannath, Sriram Infineon Technologies Austria Ag Power and Sensor Systems Villach Austria

ISBN: (纸本)9798350364446

With the introduction of the first ever 400 V SiC MOSFET technology, a gap which previously existed in the voltage range between 200 V medium-voltage MOSFET and 600 V super-junction MOSFET is closed. The new technology offers low switching losses and low on-state resistance and represents a perfect fit for 2-level topologies in 288 VDC systems or 3-level topologies working from 230 V AC to 350 VAC or 400 VDC to 550 VDC input voltages. The technology concept is briefly introduced. The expected efficiency and power density gains are verified by measurements in an appropriate test board representing a 2.5 kW 3-level PFC and are compared with the results of a common 2-level totem-pole PFC using a 650 V SiC MOSFET, as well as a classic boost PFC solution. © 2024 IEEE.

关键词： power MOSFET

来源：评论

学校读者我要写书评

暂无评论

A 125dBSPL 1%-THD, 115μA MEMS Microphone Using Passive Pre-Distortion Technique

A 125dBSPL 1%-THD, 115μA MEMS Microphone Using Passive Pre-...

引用

European Conference on Solid-State Circuits (ESSCIRC)

作者： Miodrag Nikolić Wilfried Florian Richard Gaggl Lei Liao Power and Sensor Systems Infineon Technologies Neubiberg Germany Power and Sensor Systems Infineon Technologies Austria Villach Austria

CMOS MEMS microphones are widely used due to their superior robustness and easy integration. Single-ended MEMS interfaces are cheaper than the balanced ones, but have an inherent issue with even-order harmonics. This work proposes a passive pre-distortion technique for single-ended microphone interfaces, which leads to significantly lower current consumption, reduction in the ASIC size and module packaging cost while improving total harmonic distortion (THD) and signal-to-noise ratio (SNR) performance. It introduces a programmable technique used to improve the performance of the system by ensuring MEMS nonlinearity compensation at ASIC level exploiting nonlinear capacitance-voltage (CV) characteristics of the AC coupled pMOS capacitor at the input of the read-out circuitry. This simple but effective digitally-assisted analog implementation allows firstly for the sensitivity programming, and secondly for desired trimming of performance parameters such as SNR, acoustic overload point (AOP) and 1% THD level. The proposed work results in 1% THD at 125dBSPL, 66dB system SNR and 10% THD of over 130dBSPL while consuming only 115$\mu$A. This CMOS MEMS microphone based on a single-ended interface achieves the best output-referred figure of merit (FoM) compared versus such state-of-the-art solutions in the smallest possible package. It outperforms other standard solutions in terms of SNR while achieving respectable AOP over 130dB, all with the best-in-class current consumption. The readout IC is fabricated in a standard 0.13um CMOS process.

关键词：

来源：评论

学校读者我要写书评

暂无评论

Next step in power MOSFET evolution boosts application efficiency

Next step in power MOSFET evolution boosts application effic...

引用

Annual IEEE Conference on Applied power Electronics Conference and Exposition (APEC)

作者： Ralf Siemieniec Simone Mazzer Elvir Kahrimanovic David Laforet Michael Hutzler Elias Pree Laszlo Juhasz Alessandro Ferrara Kapil Kelkar Power and Sensor Systems Infineon Technologies Austria AG Villach Austria Power and Sensor Systems Infineon Technologies Americas Corp. El Segundo CA USA

This work introduces the characteristics and properties of the latest trench MOSFET technology released to the market. Based on the advantages of a revolutionary new cell design combined with the benefits of an advanced manufacturing technology, this new device family brings together the benefits of exceptionally low conduction losses, superior switching performances, improved SOA and good ruggedness. Typical applications for these MOSFETs include telecom, server, datacom as well as solar applications, motor drives, drones, e-bikes, power tools and many other battery-powered applications. Application tests using the new devices reveal clear efficiency improvements.

关键词：

来源：评论

学校读者我要写书评

暂无评论

New 400 V SiC MOSFET and its use in Multi-Level Applications

New 400 V SiC MOSFET and its use in Multi-Level Applications

引用

European Conference on power Electronics and Applications

作者： Ralf Siemieniec Martin Wattenberg Matthias Kasper Jyotshna Bhandari Wei-Ju Chen Heejae Shim Alberto Pignatelli Sriram Jagannath Power and Sensor Systems Infineon Technologies Austria AG Villach Austria

ISBN: (数字)9798350364446

ISBN: (纸本)9798350364453

关键词： Performance evaluation MOSFET power system measurements Silicon carbide Density measurement Switches Medium voltage Topology Servers Next generation networking

来源：评论

学校读者我要写书评

暂无评论

Novel highly efficient Two-stage regulated 48 V - to - 12 V converter with dual phase 3-level buck converter featuring natural voltage balancing

Novel highly efficient Two-stage regulated 48 V - to - 12 V ...

引用

Annual IEEE Conference on Applied power Electronics Conference and Exposition (APEC)

作者： Roberto Rizzolatti Stefano Saggini Christian Rainer Mario Ursino Power & Sensor Systems - Infineon Technologies Villach Austria DPIA - University of Udine Udine Italy

Data center electricity consumption has been in-creasing rapidly in the last few years as computation moves into cloud computing [1]. In order to reduce the conduction losses in the DC bus, recently 48 V has been proposed to replace the existing 12 V bus voltage. In an attempt to adapt the old 12 V infrastructure with the new one a DC-DC converter can provide the interface between the 48 V bus and the regulated 12 V rail. This paper focuses on a novel cascaded converter consisting of a resonant switched capacitor converter and a novel dual phase three-level buck converter, which intrinsically enables flying capacitor balancing throughout inductive energy. Experimental results for a 600W prototype in 8 th brick low profile achieving 1.846kW /in 3 power density, are showing the effectiveness of the proposed approach.

关键词：

来源：评论

学校读者我要写书评

暂无评论

Time-Encoded Mostly Digital Feature Extraction for Voice Activity Detection Tasks

Time-Encoded Mostly Digital Feature Extraction for Voice Act...

引用

IEEE International Symposium on Circuits and systems (ISCAS)

作者： Yukai Shen Carlos Perez Dietmar Straeussnigg Eric Gutierrez Electronics Technology Department Carlos III University of Madrid Madrid Spain Power and Sensor Systems Infineon Technologies Villach Austria

ISBN: (数字)9798350330991

ISBN: (纸本)9798350331004

In this manuscript, we propose a time-domain, mostly digital band-pass filter architecture for audio signal feature extraction. The filter is composed of a single voltagecontrolled-oscillator (VCO) as signal encoder and monostables generating digital pulses at the edges of the pulse frequency modulated VCO output. The band-pass filtering phenomena are observed when we combine these digital pulses with different lengths, and its functionality is proved by the behavioral simulations performed with a circuit proposal built in MATLAB/Simulink. Compared to other state-of-the-art solutions, our filter architecture can take the benefit from advancement of digital technology nodes and design tools thanks to its mostly digital implementation. Moreover, the band-pass filter possesses friendly programmability, whose center frequency can be easily tuned by modifying the digital pulse length, and the single VCO encoder promises an easy calibration circuit. Finally, a recurrent neural network is trained and tested based on the features extracted from this architecture, the excellent speech/non-speech hitting rate shows the feasibility of our band-pass filters for voice activity tasks.

关键词： Band-pass filters Voice activity detection Frequency modulation Filtering Voltage-controlled oscillators Computer architecture Feature extraction

来源：评论

学校读者我要写书评

暂无评论

Towards Ultra-Low power Consumption VAD Architectures with Mixed Signal Circuits

Towards Ultra-Low Power Consumption VAD Architectures with M...

引用

IEEE International Symposium on Circuits and systems (ISCAS)

作者： Yukai Shen Dietmar Straeussnigg Eric Gutierrez Electronic Technology Department University Carlos III of Madrid Madrid Spain Power and Sensor Systems Infineon Technologies Villach Austria

A voice activity detector architecture based on an analog feature extractor and a mixed signal classification stage is proposed for ultra-low power activity. The feature extraction stage is composed of a set of analog band-pass filters and frame energy estimators. The classification stage has a fully connected first layer built with ultra-low power consumption ring oscillators, followed by gated recurrent unit layers. The ring oscillator based layer consumes nWs according to transient simulations performed in a low power 65 nm CMOS technology. Additionally it features the ability to perform the analog-to-digital conversion required to handle subsequent GRU layers, as well as the possibility of computing a non-linear function like sigmoid seizing the intrinsic non-linearity of the ring oscillator. Training and testing operations are made proving competitive classification performance between a baseline model and our proposed architecture. In light of this, proper features for deployment on power-restricted edge-computing applications are shown.

关键词：

来源：评论

学校读者我要写书评

暂无评论

A 55nm Cascode Flipped Voltage Follower for MEMS Microphone Interfaces

A 55nm Cascode Flipped Voltage Follower for MEMS Microphone ...

引用

IEEE International Symposium on Circuits and systems (ISCAS)

作者： Federica Benedini Luca Sant Richard Gaggl Andrea Baschirotto Department of Physics “G. Occhialini” University of Milano-Bicocca Milan Italy Power and Sensor Systems Infineon Technologies Villach Austria

Audio sensors systems scaling leads to microphone interfaces built in deep sub-micron technologies, which introduces critical aspects in high performance analog cells design. In this paper a Cascode Flipped Voltage Follower interface for Micro Electro-Mechanical System (MEMS) silicon microphones is presented. The pseudo-differential interface architecture suits differential microphones, gaining in linearity performance due to symmetry properties of the system. The device is based on the cascode flipped voltage follower, which allows minimizing chip area and power consumption, while enhancing noise and distortion. A prototype in 55nm CMOS features an A-weighted output integrated noise in audio frequency range of −112 dBV(A) and an Acoustic Overload Point (AOP) of $\mathbf{133}\boldsymbol{dB}_{\boldsymbol{spl}}$ . power consumption is lower than $\mathbf{225}\boldsymbol{\mu} \boldsymbol{W}$ from a 1.5 V voltage supply.

关键词：

来源：评论

学校读者我要写书评

暂无评论

Investigation of the partial discharge inception voltage of semiconductor sensor packages at repetitive impulse stress under the variation of pulse steepness and temperature

Investigation of the partial discharge inception voltage of ...

引用

IEEE International Conference on Dielectrics (ICD)

作者： Sebastian Wels Albert Claudi Rainer Schaller Department of Power Systems and High Voltage Technology University of Kassel Kassel Germany Infineon Technologies AG Sensor Package Innovation Regensburg Germany

In this paper a test and measuring system for partial discharge under impulse stress is described. Therefore a low noise impulse source with variable frequency and impulse steepness was designed. The base is a push-pull switch. The measurement was executed according to standard IEC 61934. For the present study, the measuring of the PD signals was performed with high-frequency current transformers (HFCT). The entire test set-up was optimized in several steps. The investigated components are magnetic field sensors, realized in semiconductor plastic packages. The application specific integrated circuit (ASIC) on the low voltage side is galvanically separated from a portion of the Cu leadframe, which is connected to the high voltage application circuit. Subsequently this requires a package intrinsic solid state insulation system which is reliably over the entire lifetime. The PD inception voltages of the sensor ICs were investigated in dependence of temperature and impulse steepness. The results show a clear dependency on the two parameters.

关键词： Partial discharges Voltage measurement Partial discharge measurement Insulated gate bipolar transistors High-voltage techniques Frequency measurement Temperature measurement

来源：评论

学校读者我要写书评

暂无评论

Si, SiC and GaN power devices: an unbiased view on key performance indicators

Si, SiC and GaN power devices: an unbiased view on key perfo...

引用

IEEE International Electron Devices Meeting

作者： G. Deboy M. Treu O. Haeberlen D. Neumayr Infineon Technologies Austria AG Power management & Multi market Division Austria Power Electronic Systems Laboratory ETH Zurich Switzerland

ISBN: (纸本)9781509039036

This paper discusses key parameters such as capacitances & switching losses for silicon, SiC and GaN power devices with respect to applications in switch mode power supplies. Whereas wide bandgap devices deliver roughly one order of magnitude lower charges stored in the output capacitance, the energy equivalent is nearly on par with latest generation super junction devices. Silicon devices will hence prevail in classic hard switching applications at moderate switching frequencies whereas SiC and GaN based power devices will play to their full benefits in resonant topologies at moderate to high switching frequencies.

关键词： Si SiC GaN

来源：评论

学校读者我要写书评

暂无评论

没有更多数据了...

全选清除本页清除全部题录导出标记到“检索档案”

共2页 << < 1 2 > >>

检索报告对象比较合并检索0

隐藏清空

合并搜索

回到顶部

执行限定条件

内容：

评分：

请选择保存的检索档案：

请选择收藏分类：

订阅名称：

通借通还

温馨提示：

图书名称：

借书校区：

取书校区：

手机号码：

邮箱地址：

一卡通帐号：

电话和邮箱必须正确填写，我们会与您联系确认。

联系人：

所在院系：

联系邮箱：

联系电话：

内蒙古自治区呼和浩特市赛罕区大学西街235号邮编: 010021

建议与咨询 留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案： 新增检索档案 确定 取消

请选择收藏分类： 新增自定义分类 确定 取消

通借通还

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

请选择保存的检索档案：

请选择收藏分类：