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检索条件"机构=EECS International Graduate Program and Parallel and Scientific Computing Laboratory"
25 条 记 录,以下是11-20 订阅
Effects of Spacer and Single-Charge Trap on Voltage Transfer Characteristics of Gate-All-Around Silicon Nanowire CMOS Devices and Circuits
Effects of Spacer and Single-Charge Trap on Voltage Transfer...
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IEEE Conference on Nanotechnology
作者: Sekhar Reddy Kola Yiming Li Narasimhulu Thoti Parallel and Scientific Computing Laboratory EECS International Graduate Program from National Chiao Tung University Hsinchu 300 Taiwan Parallel and Scientific Computing Laboratory Institute of Communications Engineering National Chiao Tung University Hsinchu 300 Taiwan Parallel and Scientific Computing Laboratory EECS International Graduate Program National Chiao Tung University Hsinchu 300 Taiwan
We report the effects of the spacer and the single-charge trap (SCT) on the voltage transfer characteristics of cylindrical-shape gate-all-around (GAA) silicon (Si) nanowire (NW) metal-oxide-semiconductor field effect... 详细信息
来源: 评论
Characteristics Fluctuation of Sub-3-nm Bulk FinFET Devices Induced by Random Interface Traps
Characteristics Fluctuation of Sub-3-nm Bulk FinFET Devices ...
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IEEE Conference on Nanotechnology
作者: Sekhar Reddy Kola Min-Hui Chuang Yiming Li Parallel and Scientific Computing Laboratory Electrical Engineering and Computer Science International Graduate Program National Yang Ming Chiao Tung University Hsinchu Taiwan Department of Electronics and Electrical Engineering Institute of Communications Engineering Institute of Biomedical Engineering Institute of Pioneer Semiconductor Innovation Institute of Artificial Intelligence Innovation National Yang Ming Chiao Tung University Hsinchu Taiwan
Three-dimensional (3D) bulk fin-typed field effect transistors (FinFETs) have emerged as key devices that can scale down the technology node beyond 22-nm. However, the scaled devices have created new sources of fluctu...
来源: 评论
Analysis of Negative Capacitance MOSFETs Characteristic with Spacer
Analysis of Negative Capacitance MOSFETs Characteristic with...
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2020 international Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020
作者: Lee, Yu-Chun Kola, Sekhar Reddy Chen, Chieh-Yang Chuang, Min-Hui Li, Yiming Parallel and Scientific Computing Laboratory Institute of Biomedical Engineering Institute of Communications Engineering Eecs International Graduate Program Department of Electrical and Computer Engineering Center for MmWave Smart Radar System and Technologies National Chiao Tung University 1001 Ta-Hsueh Rd Hsinchu300 Taiwan
In this work, our study comprises of design and investigation on negative capacitance (NC), metal-oxide-semiconductor (MOS) field effects transistors (MOSFETs) with spacer and source/drain (S/D) overlap engineering. T... 详细信息
来源: 评论
A Novel Design of Ferroelectric Nanowire Tunnel Field Effect Transistors
A Novel Design of Ferroelectric Nanowire Tunnel Field Effect...
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international Symposium on VLSI Technology, Systems and Applications
作者: Narasimhulu Thoti Yiming Li Parallel and Scientific Computing Laboratory National Yang Ming Chiao Tung University Hsinchu Taiwan EECS International Graduate Program National Yang Ming Chiao Tung University Hsinchu Taiwan Parallel and Scientific Computing Laboratory National Chiao Tung University Hsinchu Taiwan EECS International Graduate Program National Chiao Tung University Hsinchu Taiwan Institute of Communications Engineering National Yang Ming Chiao Tung University Hsinchu Taiwan National Chiao Tung University Hsinchu Taiwan Institute of Communications Engineering National Chiao Tung University Hsinchu Taiwan
We report for the first time a novel structure of tunneling field-effect transistors (TFETs) with ferroelectric and nanowire concepts. The device is modeled carefully to utilize the benefits of ferroelectrics through ... 详细信息
来源: 评论
Statistical 3D Device Simulation of Full Fluctuations of Gate-All-Around Silicon Nanosheet MOSFETs at Sub-3-nm Technology Nodes
Statistical 3D Device Simulation of Full Fluctuations of Gat...
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2022 international Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022
作者: Kola, Sekhar Reddy Li, Yiming Chen, Chieh-Yang Chuang, Min-Hui National Yang-Ming Chiao Tung University Electrical Engineering and Computer Science International Graduate Program Hsinchu300 Taiwan National Yang-Ming Chiao Tung University Institute of Communications Engineering Hsinchu300 Taiwan National Yang-Ming Chiao Tung University Department of Electrical Engineering and Computer Engineering Hsinchu300 Taiwan National Yang-Ming Chiao Tung University Institute of Biomedical Engineering Hsinchu300 Taiwan National Yang-Ming Chiao Tung University Parallel and Scientific Computing Laboratory Hsinchu300 Taiwan
We for the first time study characteristic fluctuation of gate-all-around silicon nanosheet MOSFETs induced by random dopants fluctuation (RDF), interface trap fluctuation (ITF), and work function fluctuation (WKF), a... 详细信息
来源: 评论
Design and exploration of vertically stacked complementary tunneling field-effect transistors
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Applied Physics Express 2024年 第1期17卷 014001-014001页
作者: Thoti, Narasimhulu Li, Yiming Parallel and Scientific Computing Laboratory National Yang Ming Chiao Tung University Hsinchu300093 Taiwan Electrical Engineering and Computer Science International Graduate Program National Yang Ming Chiao Tung University Hsinchu300093 Taiwan Institute of Communications Engineering National Yang Ming Chiao Tung University Hsinchu300093 Taiwan Institute of Biomedical Engineering National Yang Ming Chiao Tung University Hsinchu300093 Taiwan Department of Electronics and Electrical Engineering National Yang Ming Chiao Tung University Hsinchu300093 Taiwan
The purpose of this letter is to study the design and explore vertically stacked complementary tunneling field-effect transistors (CTFETs) using CFET technology for emerging technology nodes. As a prior work, the CTFE... 详细信息
来源: 评论
Machine Learning Approach to Predicting Tunnel Field-Effect Transistors
Machine Learning Approach to Predicting Tunnel Field-Effect ...
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international Symposium on VLSI Technology, Systems and Applications
作者: Chandni Akbar Narasimhulu Thoti Yiming Li Paralllel and Scientific Computing Laboratory National Yang Ming Chiao Tung University Hsinchu Taiwan EECS International Graduate Program National Yang Ming Chiao Tung University Hsinchu Taiwan Paralllel and Scientific Computing Laboratory EECS International Graduate Program Institue of Communications Engineering National Yang Ming Chiao Tung University Hsinchu Taiwan National Yang Ming Chiao Tung University Hsinchu Taiwan Institue of Communications Engineering National Chiao Tung University Hsinchu Taiwan
We for the first time investigate the possibility to replace the device simulation for tunnel field-effect transistors (TFETs) with a machine learning (ML) algorithm. By incorporating the experimentally validated devi... 详细信息
来源: 评论
Statistical Analysis of Intrinsic High-Frequency Characteristic Fluctuation of Emerging Silicon Gate-All-Around Nanosheet (NS) MOSFETs at Sub-3-nm Nodes
Statistical Analysis of Intrinsic High-Frequency Characteris...
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IEEE Electron Devices Technology and Manufacturing Conference (EDTM)
作者: Sekhar Reddy Kola Yiming Li Min-Hui Chuang Kazuhiko Endo Seiji Samukawa Parallel and Scientific Computing Laboratory Electrical Engineering and Computer Science International Graduate Program Institute of Communications Engineering Department of Electronics and Electrical Engineering Institute of Biomedical Engineering Center for mm Wave Smart Radar System and Technologies National Yang Ming Chiao Tung University Hsinchu Taiwan Institute of Fluid Science Tohoku University 2-1-1 Katahira Aoba-ku Sendai Japan National Institute of Advanced Industrial Science and Technology Tsukuba Japan
In recent years, the GAA NS Si MOSFET has been explored as a leading technology. However, the intrinsic parameters of GAA NS Si MOSFETs are affected to varying degrees by various fluctuation sources, Statistically ind... 详细信息
来源: 评论
Intrinsic Parameter Fluctuation and Process Variation Effect of Vertically Stacked Silicon Nanosheet Complementary Field-Effect Transistors
Intrinsic Parameter Fluctuation and Process Variation Effect...
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IEEE international Symposium on Quality Electronic Design
作者: Sekhar Reddy Kola Yiming Li Min-Hui Chuang Parallel and Scientific Computing Laboratory Hsinchu Taiwan Electrical Engineering and Computer Science International Graduate Program Hsinchu Taiwan Institute of Communications Engineering Hsinchu Taiwan Institute of Biomedical Engineering Hsinchu Taiwan Institute of Pioneer Semiconductor Innovation Hsinchu Taiwan Institute of Artificial Intelligence Innovation Hsinchu Taiwan Department of Electronics and Electrical Engineering National Yang Ming Chiao Tung University Hsinchu Taiwan Center for mmWave Smart Radar System and Technologies National Yang Ming Chiao Tung University Hsinchu Taiwan
We study the variability of vertically stacked gate-all-around silicon nanosheet (GAA Si NS) complementary field-effect transistors (CFETs). The process variation effect (PVE), the work function fluctuation (WKF), and... 详细信息
来源: 评论
Deep Learning Approach to Modeling and Exploring Random Sources of Gate-All-Around Silicon Nanosheet MOSFETs
Deep Learning Approach to Modeling and Exploring Random Sour...
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2022 international Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022
作者: Butola, Rajat Li, Yiming Kola, Sekhar Reddy National Yang-Ming Chiao Tung University Parallel and Scientific Computing Laboratory Hsinchu300 Taiwan National Yang-Ming Chiao Tung University Electrical Engineering and Computer Science International Graduate Program Hsinchu300 Taiwan National Yang-Ming Chiao Tung University Institute of Communications Engineering Hsinchu300 Taiwan National Yang-Ming Chiao Tung University Department of Electrical Engineering and Computer Engineering Hsinchu300 Taiwan National Yang-Ming Chiao Tung University Institute of Biomedical Engineering Hsinchu300 Taiwan Center for mmWave Smart Radar System and Technologies National Yang-Ming Chiao Tung University 1001 Ta-Hsueh Rd. Hsinchu300 Taiwan
In this paper, for the first time, deep learning (DL) based artificial neural network (ANN) is applied to model the effects of various random variations: work function fluctuation, random dopant fluctuation, and inter... 详细信息
来源: 评论