Dear editor,Polar codes, along with a low complexity successive cancellation(SC) decoding, were discovered in [1] by Ar?kan. It is shown in [2] that the bit errors with the SC decoding are correlated. To improve the p...
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Dear editor,Polar codes, along with a low complexity successive cancellation(SC) decoding, were discovered in [1] by Ar?kan. It is shown in [2] that the bit errors with the SC decoding are correlated. To improve the performance, other decoding techniques [3, 4] and concatenation schemes [5, 6] were studied. In this study, the theoretical aspects of the error correlation are investigated to improve the decoding performance of polar codes. This is the first attempt to utilize the error correlation to improve the performance of polar codes.
In this paper, a 15 dB asymmetric broadband directional coupler for 4G and 5G communication is designed. The physical size of the coupler is $13\ \text{mm}\times 60\ \text{mm}$ . The dielectric constant is 4.4 and th...
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ISBN:
(纸本)9781665482271
In this paper, a 15 dB asymmetric broadband directional coupler for 4G and 5G communication is designed. The physical size of the coupler is $13\ \text{mm}\times 60\ \text{mm}$ . The dielectric constant is 4.4 and the thickness of single layer plate is 2 mm. The couplers operate in the 0.8-3.7 GHz band. The coupler has the advantages of bandwidth width, convenient processing and installation. ANSYS HFSS 2019 simulation results shows that in the 0.8-3.7 GHz band, the return loss (S 11 ) is more than 16.4 dB, the insertion loss (S 21 ) is from 0.14 dB to 1.18 dB, the coupling degree (S 31 ) is about 15 dB, and the isolation degree (S 41 ) is more than 29 dB. The method of multi-section coupling line cascade is adopted, to achieve the requirements of bandwidth width. The directivity of the coupler is increased by loading the branches to meet the design requirements of the 15 dB coupler.
The prevalent solution for BioNER involves using representation learning techniques combined with sequence ***, such methods are inherently task-specific, demonstrate poor generalizability, and often require a dedicat...
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Machine learning methods have been used to accelerate the molecule optimization process. However, efficient search for optimized molecules satisfying several properties with scarce lab.led data remains a challenge for...
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Automatic and accurate lesion segmentation is critical for clinically estimating the lesion statuses of stroke diseases and developing appropriate diagnostic systems. Although existing methods have achieved remarkable...
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Combining the spatial filtering (SF) technique with FDTD(2, q) method (2 and q denote the temporal differential order and spatial differential order, respectively), a novel SF-FDTD(2, q) method with more relaxed Coura...
Combining the spatial filtering (SF) technique with FDTD(2, q) method (2 and q denote the temporal differential order and spatial differential order, respectively), a novel SF-FDTD(2, q) method with more relaxed Courant-Friedrichs-Lewy (CFL) condition is proposed and used for solving 3D time-dependent Schrödinger equation. Then, the correctness of the SF-FDTD(2, $q$ ) method is validated by calculating eigenfrequencies of the 3D quantum well model.
Given the bandgap narrowing (BGN) effect caused by heavy doping of the bipolar transistor and the self-heating effect (SHE) in the practical work environment, a transient electro-thermal and bandgap narrowing model is...
Given the bandgap narrowing (BGN) effect caused by heavy doping of the bipolar transistor and the self-heating effect (SHE) in the practical work environment, a transient electro-thermal and bandgap narrowing model is proposed in this paper, which is based on the Slotboom model and the modification of the drift-diffusion equation based on semiconductor equations and the heat conduction equation. The transient characteristics of the bipolar transistor in amplification mode are simulated using the differential method, and the results show that the terminal current of the bipolar transistor decreases after considering the SHE and the BGN effect. The model developed and the results obtained in this work can provide some reference significance for the optimization of the amplification characteristics of the bipolar transistor.
This paper presents a novel approach for calculating graphene-based structures in the complying divergence implicit finite-difference time-domain (CDI-FDTD) method. To begin, the differential iteration formula of grap...
This paper presents a novel approach for calculating graphene-based structures in the complying divergence implicit finite-difference time-domain (CDI-FDTD) method. To begin, the differential iteration formula of graphene structure in the CDI-FDTD method is derived utilizing the auxiliary-differential-equation (ADE) method. Next, the transmission characteristics of an infinite graphene sheet in an open space are investigated by conducting simulation analyses within the CDI-FDTD framework, considering various magnetostatic or electrostatic biases. Finally, the simulation results were compared with analytical solutions and the results obtained from traditional FDTD methods, confirming the unconditional stability and reliability of the proposed method.
The existence of q-ary linear complementary pairs (LCPs) of codes with q > 2 has been completely characterized so far. This paper gives a characterization for the existence of binary LCPs of codes. As a result, we ...
This paper describes the transient electro-thermal properties of the bipolar transistor by a two-dimensional transient electro-thermal simulation, in which model the coupled heat conduction equation and drift-diffusio...
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This paper describes the transient electro-thermal properties of the bipolar transistor by a two-dimensional transient electro-thermal simulation, in which model the coupled heat conduction equation and drift-diffusion equations are solved. The backward difference scheme with the second-order accuracy was used to discretize the time derivative. The increment of bipolar transistor temperature will affect the drift and diffusion of carriers and thus its electrical characteristics. Through the transient study of electro-thermal characteristics of the bipolar transistor, the influence of the self-heating effect on bipolar transistor characteristic has considered in amplification mode. The developed model and results obtained in this work can be used to optimize the thermal design of bipolar transistor.
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