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From light sensing to adaptive learning:hafnium diselenide reconfigurable memcapacitive devices in neuromorphic computing

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Light(science & Applications) 2025年第1期14卷 215-226页

作者： Bashayr Alqahtani Hanrui Li Abdul Momin Syed Nazek El-Atab Electrical and Computer Engineering Program Computer Electrical Mathematical Science and Engineering DivisionKing Abdullah University of Science and Technology(KAUST)ThuwalSaudi Arabia Electrical Engineering Department College of EngineeringPrincess Nourah Bint Abdulrahman University(PNU)RiyadhSaudi Arabia

Advancements in neuromorphic computing have given an impetus to the development of systems with adaptive behavior,dynamic responses,and energy efficiency *** charge-based or emerging memory technologies such as memristors have been developed to emulate synaptic plasticity,replicating the key functionality of neurons—integrating diverse presynaptic inputs to fire electrical impulses—has remained *** this study,we developed reconfigurable metal-oxide-semiconductor capacitors(MOSCaps)based on hafnium diselenide(HfSe2).The proposed devices exhibit(1)optoelectronic synaptic features and perform separate stimulus-associated learning,indicating considerable adaptive neuron emulation,(2)dual light-enabled charge-trapping and memcapacitive behavior within the same MOSCap device,whose threshold voltage and capacitance vary based on the light intensity across the visible spectrum,(3)memcapacitor volatility tuning based on the biasing conditions,enabling the transition from volatile light sensing to non-volatile optical data *** reconfigurability and multifunctionality of MOSCap were used to integrate the device into a leaky integrate-and-fire neuron model within a spiking neural network to dynamically adjust firing patterns based on light stimuli and detect exoplanets through variations in light intensity.

关键词： integrate volatile integrating

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Etching-free pixel definition in InGaN green micro-LEDs

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Light(science & Applications) 2024年第8期13卷 1655-1665页

作者： Zhiyuan Liu Yi Lu Haicheng Cao Glen Isaac Maciel Garcia Tingang Liu Xiao Tang Na Xiao Raul Aguileta Vazquez Mingtao Nong Xiaohang Li Advanced Semiconductor Laboratory Electrical and Computer Engineering ProgramCEMSE DivisionKing Abdullah University of Science and Technology(KAUST)Thuwal 23955-6900Kingdom of Saudi Arabia

The traditional plasma etching process for defining micro-LED pixels could lead to significant sidewall *** near sidewall regions act as non-radiative recombination centers and paths for current leakage,significantly deteriorating device *** this study,we demonstrated a novel selective thermal oxidation(STO)method that allowed pixel definition without undergoing plasma damage and subsequent dielectric *** annealing in ambient air oxidized and reshaped the LED structure,such as p-layers and InGaN/GaN multiple quantum ***,the pixel areas beneath the pre-deposited SiO_(2)layer were selectively and effectively *** was demonstrated that prolonged thermal annealing time enhanced the insulating properties of the oxide,significantly reducing LED leakage ***,applying a thicker SiO_(2)protective layer minimized device resistance and boosted device efficiency *** the STO method,InGaN green micro-LED arrays with 50-,30-,and 10-μm pixel sizes were manufactured and *** results indicated that after 4 h of air annealing and with a 3.5-μm SiO_(2)protective layer,the 10-μm pixel array exhibited leakage currents density 1.2×10^(-6)A/cm^(2)at-10 V voltage and a peak on-wafer external quantum efficiency of~6.48%.This work suggests that the STO method could become an effective approach for future micro-LED manufacturing to mitigate adverse LED efficiency size effects due to the plasma etching and improve device ***-LEDs fabricated through the STO method can be applied to micro-displays,visible light communication,and optical interconnect-based *** planar pixel geometry will provide more possibilities for the monolithic integration of driving circuits with ***,the STO method is not limited to micro-LED fabrication and can be extended to design other III-nitride devices,such as photodetectors,laser diodes,high-electron-mobility transistors

关键词： annealing protective quantum

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Artificial visual perception neural system using a solution-processable MoS_(2)-based in-memory light sensor

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Light(science & Applications) 2023年第8期12卷 1583-1594页

作者： Dayanand Kumar Lana Joharji Hanrui Li Ayman Rezk Ammar Nayfeh Nazek El-Atab Smart Advanced Memory Devices and Applications(SAMA)LaboratoryElectrical and Computer Engineering ProgramComputer Electrical Mathematical Science and Engineering DivisionKing Abdullah University of Science and Technology(KAUST)Thuwal 23955Kingdom of Saudi Arabia Department of Electrical Engineering and Computer Science Khalifa UniversityAbu Dhabi 127788United Arab Emirates

Optoelectronic devices are advantageous in in-memory light sensing for visual information processing,recognition,and storage in an energy-efficient ***,in-memory light sensors have been proposed to improve the energy,area,and time efficiencies of neuromorphic computing *** study is primarily focused on the development of a single sensing-storage-processing node based on a two-terminal solution-processable MoS2 metal-oxide-semiconductor(MOS)charge-trapping memory structure—the basic structure for charge-coupled devices(CCD)—and showing its suitability for in-memory light sensing and artificial visual *** memory window of the device increased from 2.8 V to more than 6V when the device was irradiated with optical lights of different wavelengths during the program ***,the charge retention capability of the device at a high temperature(100 ℃)was enhanced from 36 to 64%when exposed to a light wavelength of 400 *** larger shift in the threshold voltage with an increasing operating voltage confirmed that more charges were trapped at the Al_(2)O_(3)/MoS_(2) interface and in the MoS_(2) layer.A small convolutional neural network was proposed to measure the optical sensing and electrical programming abilities of the *** array simulation received optical images transmitted using a blue light wavelength and performed inference computation to process and recognize the images with 91%*** study is a significant step toward the development of optoelectronic MOS memory devices for neuromorphic visual perception,adaptive parallel processing networks for in-memory light sensing,and smart CCD cameras with artificial visual perception capabilities.

关键词： visual neural process

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Characterization of H2-air detonations with high-speed (2.5 MHz) Rayleigh scattering and single-shot planar laser-induced fluorescence of nitric oxide

Characterization of H2-air detonations with high-speed (2.5 ...

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AIAA science and Technology Forum and Exposition, AIAA SciTech Forum 2025

作者： Chatelain, Karl P. Alicherif, Mhedine Guiberti, Thibault F. Lacoste, Deanna A. Mechanical Engineering Program Physical Science and Engineering Division PO box 4700 Thuwal23955-6900 Saudi Arabia

ISBN: (纸本)9781624107238

This study characterizes a CJ hydrogen-air detonation using high-speed Rayleigh scattering and single-shot planar laser-induced fluorescence of nitric oxide (NO-PLIF). Firstly, we demonstrate that a Nd:YAG laser cluster can be employed to conduct high-speed Rayleigh scattering visualizations of hydrogen-air detonations at 25 kPa, achieving effective visualization frequencies of 2.5MHz in this study. This multipulse Rayleigh scattering diagnostic is complementary to the existing techniques: (i) it enables the characterization of any detonation, from CJ detonations in large aspect ratio channel to marginal detonations in narrow channels;(ii) it is significantly less expensive than typical burst-mode lasers;(iii) it has adjustable visualization frequency, which can go beyond 10MHz with the same energy per pulse. This makes this diagnostic even more suitable for high-pressure detonations or for undiluted conditions, where structures are smaller and detonations faster, respectively;(iv) it is easily applicable to higher initial pressures since the Rayleigh signal scales with number density. Secondly, we combine this multipulse Rayleigh scattering with NO-PLIF to complement the average speed and speed decay measurements with local induction zone length (δi) measurements. This five-beam configuration provides measurement capabilities similar to our previous three beam configuration, outside of the local speed decay. Furthermore, an experimental and numerical assessment reveals that δi measurements cannot be achieved from Rayleigh scattering, as they are significantly underestimated—by approximately 25%—compared to those from NO-PLIF. Hence, NO-PLIF is recommended over Rayleigh scattering for accurate δi measurements in future studies. © 2025, American Institute of Aeronautics and Astronautics Inc, AIAA. All rights reserved.

关键词： Rayleigh scattering

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Back-end-of-line integration of 2D materials on silicon microchips

Back-end-of-line integration of 2D materials on silicon micr...

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2023 International Electron Devices Meeting, IEDM 2023

作者： Lanza, M. Pazos, S. Zhu, K. Yuan, Y. Shen, Y. Alharbi, O. Zheng, W. Zhang, X. Alshareef, H.N. Materials Science and Engineering Program Physical Science and Engineering Division Thuwal23955-6900 Saudi Arabia

ISBN: (纸本)9798350327670

Two-dimensional (2D) materials have excellent electronic and thermal properties that could help to improve the performance of electronic devices and circuits. However, scalable 2D materials synthesis and their integration in silicon microchips (with, for example, complementary metal-oxide-semiconductor, CMOS) transistors presents some challenges, mainly related to the presence of local defects that degrade device/circuit performance. In this invited article, we discuss the integration of 2D materials in silicon microchips. We analyze the type of materials and their properties, the main synthesis and manipulation methods, the type of circuits fabricated, the electronic performance achieved, as well as the future challenges and solutions. We focus on microchips with pre-patterned CMOS circuits on which the 2D material is deposited at the back-end-of-line (BEOL). © 2023 IEEE.

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Sintering-based lithography metal additive manufacturing of chiral mechanical metamaterials with a twist 1

Sintering-based lithography metal additive manufacturing of ...

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1st International Conference on Digital Sovereignty, ICDS 2024

作者： Melentiev, Ruslan Wagih, Ahmed Van Der Heijden, Bram Lubineau, Gilles Grande, Carlos A. Thuwal23955-6900 Saudi Arabia Thuwal23955-6900 Saudi Arabia Mechanical Engineering Program Physical Sciences and Engineering Division Saudi Arabia Thuwal23955-6900 Saudi Arabia Chemical Engineering Program. Physical Science and Engineering Division King Abdullah University of Science and Technology Saudi Arabia

Metamaterials are a cla b of materials with extraordinary capabilities derived from their engineered structure. In 2017, Frenzel et al. (science 358, 2017) conceptualized "three-dimensional mechanical metamaterials with a twist,"which convert linear deformation into rotational motion - a mechanical response that surpa bes the bounds of Cauchy continuum mechanics. However, the lack of suitable manufacturing technologies for producing metallic twist metamaterials has precluded their experimental validation and potential applications to date. Herein, 316L-stainle b-steel twist metamaterials are fabricated at various scales using an emerging sintering-based technology - lithography metal manufacturing (LMM) - and their mechanical responses are tested using stereo digital image correlation. Results provide the first empirical evidence of compre bion-induced rotation in steel twist metamaterials and highlight their sensitivity to manufacturing defects. Video, Application 1 Supplementary 1 Video, Application 2 Supplementary 2 Video, Application 3 Supplementary 3 © 2025 The Author(s).

关键词： Sintering

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Design,simulation,and testing of a tunable MEMS multi-threshold inertial switch

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Microsystems & Nanoengineering 2024年第2期10卷 37-46页

作者： Qiu Xu Rodrigo T.Rocha Yousef Algoos Eric Feron Mohammad I.Younis Faculty of Electronic Information Engineering Huaiyin Institute of TechnologyHuai’an223003PR China Computer Electrical and Mathematical Science and Engineering DivisionKing Abdullah University of Science and TechnologyThuwal23955-6900Saudi Arabia Piezoelectric Microsystem Technologies Silicon Austria LabsVillach9524Austria Physical Sciences and Engineering Division King Abdullah University of Science and TechnologyThuwal23955Saudi Arabia Mechanical Engineering Department State University of New YorkBinghamtonNY13902USA

This paper presents a tunable multi-threshold micro-electromechanical inertial switch with adjustable threshold *** demonstrated device combines the advantages of accelerometers in providing quantitative acceleration measurements and g-threshold switches in saving power when in the inactive state upon experiencing acceleration below the *** designed proof-of-concept device with two thresholds consists of a cantilever microbeam and two stationary electrodes placed at different positions in the sensing *** adjustable threshold capability and the effect of the shock duration on the threshold acceleration are analytically investigated using a nonlinear beam *** are shown for the relationships among the applied bias voltage,the duration of shock impact,and the tunable *** fabricated prototypes are tested using a shock-table *** analytical results agree with the experimental *** designed device concept is very promising for the classification of the shock and impact loads in transportation and healthcare applications.

关键词： tunable acceleration testing

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Wide bandgap semiconductor-based integrated circuits

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Chip 2023年第4期2卷 105-132页

作者： Saravanan Yuvaraja Vishal Khandelwal Xiao Tang Xiaohang Li Advanced Semiconductor Laboratory(ASL) Electrical and Computer Engineering ProgramComputerElectrical and Mathematical Science&Engineering(CEMSE)DivisionKing Abdullah University of Science andTechnology(KAUST)Thuwal 23955-6900Kingdom of Saudi Arabia

Wide-bandgap semiconductors exhibit much larger energybandgaps than traditional semiconductors such as silicon,rendering them very promising to be applied in the fields of electronics and *** examples of semiconductors include SiC,GaN,ZnO,and diamond,which exhibitdistinctive characteristics such as elevated mobility and *** characteristics facilitate the operation of awide range of devices,including energy-efficient bipolar junctiontransistors(BJTs)and metal-oxide-semiconductor field-effecttransistors(MOSFETs),as well as high-frequency high-electronmobility transistors(HEMTs)and optoelectronic components suchas light-emitting diodes(LEDs)and *** semiconductorsare used in building integrated circuits(ICs)to facilitate theoperation of power electronics,computer devices,RF systems,andother optoelectronic *** breakthroughs includevarious applications such as imaging,optical communication,*** them,the field of power electronics has witnessedtremendous progress in recent years with the development of widebandgap(WBG)semiconductor devices,which is capable ofswitching large currents and voltages rapidly with low ***,it has been proven challenging to integrate these deviceswith silicon complementary metal oxide semiconductor(CMOS)logic circuits required for complex control *** monolithic integration of silicon CMOS with WBG devices increases thecomplexity of fabricating monolithically integrated smart integrated circuits(ICs).This review article proposes implementingCMOS logic directly on the WBG platform as a ***,achieving the CMOS functionalities with the adoption of WBGmaterials still remains a significant *** article summarizesthe research progress in the fabrication of integrated circuitsadopting various WBG materials ranging from SiC to diamond,with the goal of building future smart power ICs.

关键词： Wide bandgap semiconductors Integrated circuits Transistors Power electronics

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Realization of a quadrupole topological insulator phase in a gyromagnetic photonic crystal

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National science Review 2024年第11期11卷 47-53页

作者： Peiheng Zhou Gui-Geng Liu Zihao Wang Shuwei Li Qindong Xie Yunpeng Zhang Subhaskar Mandal Xiang Xi Zhen Gao Longjiang Deng Baile Zhang National Engineering Research Center of Electromagnetic Radiation Control Materials Key Laboratory of Multi-spectral Absorbing Materials and Structures of Ministry of EducationUniversity of Electronic Science and Technology of China Division of Physics and Applied Physics School of Physical and Mathematical Sciences Nanyang Technological University School of Electrical Engineering and Intelligentization Dongguan University of Technology Department of Electronic and Electrical Engineering Southern University of Science and Technology Centre for Disruptive Photonic Technologies The Photonics InstituteNanyang Technological University

The field of topological photonics was initiated with the realization of a Chern insulator phase in a gyromagnetic photonic crystal(Ph C) with broken time-reversal symmetry(T), hosting chiral edge states that are topologically protected propagating modes. Along a separate line of research, a quadrupole topological insulator was the first higher-order topological phase supporting localized corner states, but has been so far limited to T-invariant systems, as T is a key ingredient in early models. Here we report the realization of a quadrupole topological insulator phase in a gyromagnetic Ph C, as a consequence of topological phase transition from the previously demonstrated Chern insulator phase. The phase transition has been demonstrated with microwave measurements, which characterize the evolution from propagating chiral edge states to localized corner states. We also demonstrate the migration of topological boundary states into the continuum, when the gyromagnetic Ph C is magnetically tuned. These results extend the quadrupole topological insulator phase into T-broken systems, and integrate topologically protected propagating and localized modes in a magnetically tunable photonic crystal platform.

关键词： quadrupole topological insulator time-reversal symmetry breaking corner states topological phase transition

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Assessment of the wall effects on the cellular structure by combined planar laser-induced fluorescence and Rayleigh scattering

Assessment of the wall effects on the cellular structure by ...

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AIAA science and Technology Forum and Exposition, AIAA SciTech Forum 2025

作者： Alicherif, Mhedine Chavez, Samir B. Rojas Chatelain, Karl P. Guiberti, Thibault F. Lacoste, Deanna A. PO box 4700 Thuwal23955-6900 Saudi Arabia Mechanical Engineering Program Physical Science and Engineering Division King Abdullah University of Science and Technology Thuwal23955-6900 Saudi Arabia

ISBN: (数字)9781624107238

ISBN: (纸本)9781624107238

This study investigates the structure of the detonation front in a stoichiometric H2-air mixture (2H2-O2-3.76N2), seeded with 2000,ppm of NO, at 25,kPa and 293,K, for two channel positions: centered and near thewalls (side). Acombination of NO-PLIF and Rayleigh scattering techniques was used to characterize key features of the detonation front, such as unburned gas pockets, transverse waves, cellular irregularities, and triple point trajectories. The irregular features were categorized into four distinct "events", and their occurrence probabilities were determined for each configuration based on samples of over one hundred detonation cells. The centered configuration showed fewer irregularities with lower probabilities for all events, indicating a regular structure. In contrast, the side configuration showed higher probabilities for all events, indicating a more irregular structure closer to the walls. With the same techniques a correlation between the formation of unburned gas pockets and a local thickening of the front was investigated. While the processes seems to be interconnected in the center of the channel this correlation is lost closer to the walls. The results suggest a strong dependence between the occurrence detonation irregularities and their position relative to the walls. © 2025, American Institute of Aeronautics and Astronautics Inc, AIAA. All rights reserved.

关键词： Rayleigh scattering

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