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2022 IEEE International Symposium on Antennas and Propagation and USNC-URSI Radio science Meeting, AP-S/URSI 2022

作者： Uulu, Doolos Aibek Chen, Rui Chen, Liang Li, Ping Bagci, Hakan Computer Electrical and Mathematical Science and Engineering Division Electrical and Computer Engineering Program Thuwal23955-6900 Saudi Arabia Shanghai Jiao Tong University Key Lab. of Min. of Educ. of Des. and Electromagnetic Compatibility of High-Speed Electronic Systems Shanghai200240 China

ISBN: (数字)9781665496582

ISBN: (纸本)9781665496582

A coupled system of volume integral and two-fluid hydrodynamic equations is solved to analyze electromagnetic field interactions with non-local dispersion effects on semiconductor nanostructures. This coupled system, where the hydrodynamic currents and the electric flux are the unknowns, is discretized using Schaubert-Wilton-Glisson basis functions. Numerical results obtained using this solver show the presence of so-called acoustic modes at the frequencies lower than the resonance frequency of localized surface plasmon (LSP) mode. These modes cannot be identified if a Drude-like model or the single-fluid hydrodynamic equation is used to represent the electrical properties of the semiconductors. © 2022 IEEE.

关键词： Electromagnetic fields

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Phase-pure two-dimensional Fe_(X)GeTe_(2) magnets with near-room-temperature Tc

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Nano Research 2022年第1期15卷 457-464页

作者： Govindan Kutty Rajendran Nair Zhaowei Zhang Fuchen Hou§ Ali Abdelaziem Xiaodong Xu Steve Wu Qing Yang Nan Zhang Weiqi Li Chao Zhu Yao Wu Heng Weiling Lixing Kang Teddy Salim Jiadong Zhou Lin Ke Junhao Lin Xingji Li Weibo Gao Zheng Liu School of Material Science and Engineering 50 Nanyang Ave639798Singapore Division of Physics and Applied Physics School of Physical and Mathematical SciencesNanyang Technological University21 Nanyang Link637371 Singapore Department of Physics Southern University of Science and TechnologyShenzhen 518055China Institute of Materials Research and Engineering Agency for Science Technology and Research(A*STAR)2 Fusionopolis WaySingapore 138634Singapore School of Material Science and Engineering School of PhysicsHarbin Institute of TechnologyHarbin 150001China Shenzhen Key Laboratory of for Advanced Quantum Functional Materials and Devices Southern University of Science and TechnologyShenzhen 518055China National Institute of Laser Enhanced Sciences(NILES) Cairo UniversityGiza 12613Egypt CINTRA CNRS/NTU/THALES UMI3288Research Techno Plaza637553Singapore School of Electrical and Electronic Engineering Nanyang Technological University50 Nanyang Ave639798Singapore

Two-dimensional(2D)ferromagnets with out-of-plane(OOP)magnetic anisotropy are potential candidates for realizing the next-generation memory devices with ultra-low power consumption and high storage ***,a scalable approach to synthesize 2D magnets with OOP anisotropy directly on the complimentary metal-oxide semiconductor(CMOS)compatible substrates has not yet been mainly explored,which hinders the practical application of 2D *** work demonstrates a cascaded space confined chemical vapor deposition(CS-CVD)technique to synthesize 2D FexGeTe_(2) *** weight fraction of iron(Fe)in the precursor controls the phase purity of the as-grown *** a result,high-quality Fe_(3)GeTe_(2) and Fe_(5)GeTe_(2) flakes have been grown selectively using the CS-CVD *** temperature(Tc)of the as-grown FexGeTe2 can be up to-280 K,nearly room *** thickness and temperature-dependent magnetic studies on the Fe_(5)GeTe_(2) reveal a 2D Ising to 3D XY ***,Terahertz spectroscopy experiments on Fe_(5)GeTe_(2) display the highest conductivity among other FexGeTe_(2) 2D *** results of this work indicate a scalable pathway for the direct growth and integration of 2D ternary magnets on CMOS-based substrates to develop spintronic memory devices.

关键词： cascaded space confined chemical vapor deposition(CVD) van der Waals(vdW) ferromagnetism out of plane anisotropy iron germanium telluride terahertz

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Imaging atomic-scale chemistry from fused multi-modal electron microscopy

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npj Computational Materials 2022年第1期8卷 164-171页

作者： Jonathan Schwartz Zichao Wendy Di Yi Jiang Alyssa J.Fielitz Don-Hyung Ha Sanjaya D.Perera Ismail El Baggari Richard D.Robinson Jeffrey A.Fessler Colin Ophus Steve Rozeveld Robert Hovden Department of Materials Science and Engineering University of MichiganAnn ArborMIUSA Mathematics and Computer Science Division Argonne National LaboratoryLemontILUSA Advanced Photon Source Facility Argonne National LaboratoryLemontILUSA Dow Chemical Co. MidlandMIUSA Department of Material Science and Engineering Cornell UniversityIthacaNew YorkUSA School of Integrative Engineering Chung-Ang UniversitySeoulRepublic of Korea Department of Physics Cornell UniversityIthacaNYUSA The Rowland Institute at Harvard CambridgeMAUSA Department of Electrical Engineering and Computer Science University of MichiganAnn ArborMIUSA National Center for Electron Microscopy Lawrence Berkeley National LaboratoryMolecular FoundryBerkeleyCAUSA Applied Physics Program University of MIchiganAnn ArborMIUnited States

Efforts to map atomic-scale chemistry at low doses with minimal noise using electron microscopes are fundamentally limited by inelastic ***,fused multi-modal electron microscopy offers high signal-to-noise ratio(SNR)recovery of material chemistry at nano-and atomic-resolution by coupling correlated information encoded within both elastic scattering(high-angle annular dark-field(HAADF))and inelastic spectroscopic signals(electron energy loss(EELS)or energy-dispersive x-ray(EDX)).By linking these simultaneously acquired signals,or modalities,the chemical distribution within nanomaterials can be imaged at significantly lower doses with existing detector *** many cases,the dose requirements can be reduced by over one order of *** high SNR recovery of chemistry is tested against simulated and experimental atomic resolution data of heterogeneous nanomaterials.

关键词： materials chemistry fused

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DC and RF Performance Analysis of Junctionless Gate All Around Nanosheet MOSFET

DC and RF Performance Analysis of Junctionless Gate All Arou...

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IEEE International WIE Conference on electrical and Computer engineering (WIECON-ECE)

作者： Joyprokash Debnath Mahfuza Anjum Md Hasin Akhyear Showmik Singha Department of Electrical and Electronic Engineering Shahjalal University of Science and Technology Sylhet Bangladesh Physical Design Division Neural Semiconductor Limited Dhaka Bangladesh

This article presents an analysis of the DC and RF/analog performance of junctionless gate-all-around nanosheet MOSFET (JL-GAA-NSFET), focusing on the evaluation of short channel effects (SCEs) and RF performance parameters. The findings of the study indicate that the JL-GAA-NSFET shows greater compatibility for low-power applications with smaller gate lengths as it demonstrates better endurance to the SCEs in comparison to the conventional inversion mode nanosheet MOS-FET (IM-GAA-NSFET). The JL-GAA-NSFET demonstrates a significant enhancement in several key performance metrics compared to the IM-GAA-NSFET. Specifically, it exhibits a 30% improvement in drain-induced barrier lowering (DIBL), a 13.5 % improvement in subthreshold swing (SS), a reduction of approximately 7 times in off-state current, an increase of approximately 6 times in the Ion/Ioff ratio, and a substantial decrease of 2×10 2 times in gate-induced drain leakage (GIDL) current. However, in terms of RF performance metrics, JL-GAA-NSFET shows comparatively low transconductance (gm) and cut-off frequency (f t ). The JL-GAA-NSFET shows a peak gm value of 2.73×10 −4 S, a f t value of 619 GHz, and a TGF value of 96.72 V −1 , which are about 20%, 42.14% reduction, and a 24% increase, respectively, compared to the IM-GAA-NSFET.

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Sol-gel Derived (Pb0.65Sr0.35)(Zr0.5, Ti0.5)O3Ferroelectric Thin Films: Structural and electrical Properties 3

Sol-gel Derived (Pb0.65Sr0.35)(Zr0.5, Ti0.5)O3Ferroelectric ...

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3rd International Conference on Recent Advances in Fundamental and Applied sciences, RAFAS 2021

作者： Bhasker, V. Sharma, U. Kumar, G. Thomas, R. School of Chemical Engineering and Physical Sciences Lovely Professional University Punjab 144411 India School of Electronics and Electrical Engineering Lovely Professional University Punjab 144411 India School of Computer Science and Engineering Lovely Professional University Punjab 144411 India Division of Research and Development Lovely Professional University Punjab 144411 India

The Pb(Zr0.5, Ti0.5)O3 (PZT) is one of the ferroelectric materials used in the non-volatile memories. However, PZT usually suffers from fatigue that degrades the polarization with metallic electrodes. The high stability associated with Sr-O bonding reduces oxygen vacancies which in turn lessens fatigue and hence Sr in introduced at Pb site. In the present study (Pb0.65Sr0.35)(Zr0.5, Ti0.5)O3 (PSZT) ferroelectric thin films were successfully prepared by sol-gel method. The structural and morphological properties of the thin film were studied by x-ray diffraction and atomic force microscopy, respectively. The crystallization of the film was completed at 600°C of annealing and the root mean square roughness of the 300 nm film was around 4.5 nm. When Pb in Pb(Zr0.5, Ti0.5)O3 was substituted with 35% Sr, the coercive field increased and the remnant polarization reduced as compared to pure PZT. The films were ferroelectric at room temperature with the phase transition temperature at ∼375°K. The dielectric constant and the loss tangent at room temperature were 257 and 0.023, respectively at 100 kHz. © Published under licence by IOP Publishing Ltd.

关键词： Ferroelectricity

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Advancement of Gate Oxides from SiO2to High-k Dielectrics in Microprocessor and Memory 3

Advancement of Gate Oxides from SiO2to High-k Dielectrics in...

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3rd International Conference on Recent Advances in Fundamental and Applied sciences, RAFAS 2021

作者： Sharma, U. Kumar, G. Mishra, S. Thomas, R. School of Electronics and Electrical Engineering Lovely Professional University Punjab 144411 India Division of Research and Development Lovely Professional University Punjab 144411 India School of Computer Science and Engineering Lovely Professional University Punjab 144411 India School of Chemical Engineering and Physical Sciences Lovely Professional University Punjab 144411 India

Silicon and its native oxides (SiO2) have led the continuous development in the integrated circuits for decades. The excellent insulating properties of SiO2 and silicon/SiO2 interface quality were used as capacitor dielectrics in random-access memories (RAM's) and transistor gate dielectrics in complementary metal-oxide semiconductor (CMOS's), respectively, for the memory and logic devices. These are the core components and act as the heart of the semiconductor industry. However, reducing the thickness of SiO2 to increase the capacitance at a reduced lateral size resulted into high leakage current and large power consumption in the aforementioned high-density semiconductor devices. To overcome this concern, high-permittivity materials were considered in replacing the SiO2 to achieve high capacitance at a higher thickness. Numerous materials ranging from Al2O3 (k∼9) to perovskites (k∼102-104) are being actively investigated but Hafnium based compound high-k dielectric/metal gate (k∼10-15) captivate great attention and used for logic and memory devices. However, finding a real high-k material (k∼25-40) with silicon is a major challenge by itself as it requires an ideal interface with minimum defects. Therefore, with this article, we review the efforts in replacing SiO2 with higher-k dielectrics over the years to match the performance of processor from generation to generation. © Published under licence by IOP Publishing Ltd.

关键词： Silica

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Strain-Insensitive Hierarchically Structured Stretchable Microstrip Antennas for Robust Wireless Communication

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Nano-Micro Letters 2021年第8期13卷 1-12页

作者： Jia Zhu Senhao Zhang Ning Yi Chaoyun Song Donghai Qiu Zhihui Hu Bowen Li Chenghao Xing Hongbo Yang Qing Wang Huanyu Cheng Department of Engineering Science and Mechanics The Pennsylvania State UniversityUniversity ParkPA 16802USA Division of Life Sciences and Medicine School of Biomedical Engineering(Suzhou)University of Science and Technology of ChinaHefei 230022People’s Republic of China Institute of Biomedical Engineering and Technology Chinese Academy of ScienceSuzhou 215011People’s Republic of China Department of Materials Science and Engineering The Pennsylvania State UniversityUniversity ParkPA 16802USA School of Engineering and Physical Sciences Heriot-Watt UniversityUniversity ParkEdinburgh EH144ASScotlandUK Department of Electrical Engineering The Pennsylvania State UniversityUniversity ParkPA 16802USA

As the key component of wireless data transmission and powering,stretchable antennas play an indispensable role in flexible/stretchable ***,they often suffer from frequency detuning upon mechanical deformations;thus,their applications are limited to wireless sensing with wireless transmission capabilities remaining ***,a hierarchically structured stretchable microstrip antenna with meshed patterns arranged in an arched shape showcases tunable resonance frequency upon deformations with improved overall *** almost unchanged resonance frequency during deformations enables robust on-body wireless communication and RF energy harvesting,whereas the rapid changing resonance frequency with deformations allows for wireless *** proposed stretchable microstrip antenna was demonstrated to communicate wirelessly with a transmitter(input power of−3 dBm)efficiently(i.e.,the receiving power higher than−100 dBm over a distance of 100 m)on human bodies even upon 25%*** flexibility in structural engineering combined with the coupled mechanical-electromagnetic simulations,provides a versatile engineering toolkit to design stretchable microstrip antennas and other potential wireless devices for stretchable electronics.

关键词： Stretchable microstrip antennas Strain-insensitive resonance frequency Wireless communication RF energy harvesting Wearable and bio-integrated electronics

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Technology Roadmap for Flexible Sensors

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ACS NANO 2023年第6期17卷 5211-5295页

作者： Luo, Yifei Abidian, Mohammad Reza Ahn, Jong-Hyun Akinwande, Deji Andrews, Anne M. Antonietti, Markus Bao, Zhenan Berggren, Magnus Berkey, Christopher A. Bettinger, Christopher John Chen, Jun Chen, Peng Cheng, Wenlong Cheng, Xu Choi, Seon-Jin Chortos, Alex Dagdeviren, Canan Dauskardt, Reinhold H. Di, Chong-an Dickey, Michael D. Duan, Xiangfeng Facchetti, Antonio Fan, Zhiyong Fang, Yin Feng, Jianyou Feng, Xue Gao, Huajian Gao, Wei Gong, Xiwen Guo, Chuan Fei Guo, Xiaojun Hartel, Martin C. He, Zihan Ho, John S. Hu, Youfan Huang, Qiyao Huang, Yu Huo, Fengwei Hussain, Muhammad M. Javey, Ali Jeong, Unyong Jiang, Chen Jiang, Xingyu Kang, Jiheong Karnaushenko, Daniil Khademhosseini, Ali Kim, Dae-Hyeong Kim, Il-Doo Kireev, Dmitry Kong, Lingxuan Lee, Chengkuo Lee, Nae-Eung Lee, Pooi See Lee, Tae-Woo Li, Fengyu Li, Jinxing Liang, Cuiyuan Lim, Chwee Teck Lin, Yuanjing Lipomi, Darren J. Liu, Jia Liu, Kai Liu, Nan Liu, Ren Liu, Yuxin Liu, Yuxuan Liu, Zhiyuan Liu, Zhuangjian Loh, Xian Jun Lu, Nanshu Lv, Zhisheng Magdassi, Shlomo Malliaras, George G. Matsuhisa, Naoji Nathan, Arokia Niu, Simiao Pan, Jieming Pang, Changhyun Pei, Qibing Peng, Huisheng Qi, Dianpeng Ren, Huaying Rogers, John A. Rowe, Aaron Schmidt, Oliver G. Sekitani, Tsuyoshi Seo, Dae-Gyo Shen, Guozhen Sheng, Xing Shi, Qiongfeng Someya, Takao Song, Yanlin Stavrinidou, Eleni Su, Meng Sun, Xuemei Takei, Kuniharu Tao, Xiao-Ming Tee, Benjamin C. K. Thean, Aaron Voon-Yew Trung, Tran Quang Wan, Changjin Wang, Huiliang Wang, Joseph Wang, Ming Wang, Sihong Wang, Ting Wang, Zhong Lin Weiss, Paul S. Wen, Hanqi Xu, Sheng Xu, Tailin Yan, Hongping Yan, Xuzhou Yang, Hui Yang, Le Yang, Shuaijian Yin, Lan Yu, Cunjiang Yu, Guihua Yu, Jing Yu, Shu-Hong Yu, Xinge Zamburg, Evgeny Zhang, Haixia Zhang, Xiangyu Zhang, Xiaosheng Zhang, Xueji Zhang, Yihui Zhang, Yu Zhao, Siyuan Zhao, Xuanhe Zheng, Yuanjin Zheng, Yu-Qing Zheng, Zijian Zhou, Tao Zhu, Bowen Zhu, Ming Zhu, Rong Zhu, Yangzhi Zhu, Yong Zou, Guijin Chen, Xiaodong 08-03 Innovis Singapore 138634 Republic of Singapore Innovative Centre for Flexible Devices (iFLEX) School of Materials Science and Engineering Nanyang Technological University Singapore 639798 Singapore Department of Biomedical Engineering University of Houston Houston Texas 77024 United States School of Electrical and Electronic Engineering Yonsei University Seoul 03722 Republic of Korea Department of Electrical and Computer Engineering The University of Texas at Austin Austin Texas 78712 United States Microelectronics Research Center The University of Texas at Austin Austin Texas 78758 United States Department of Chemistry and Biochemistry California NanoSystems Institute and Department of Psychiatry and Biobehavioral Sciences Semel Institute for Neuroscience and Human Behavior and Hatos Center for Neuropharmacology University of California Los Angeles Los Angeles California 90095 United States Colloid Chemistry Department Max Planck Institute of Colloids and Interfaces 14476 Potsdam Germany Department of Chemical Engineering Stanford University Stanford California 94305 United States Laboratory of Organic Electronics Department of Science and Technology Campus Norrköping Linköping University 83 Linköping Sweden Wallenberg Initiative Materials Science for Sustainability (WISE) and Wallenberg Wood Science Center (WWSC) SE-100 44 Stockholm Sweden Department of Materials Science and Engineering Stanford University Stanford California 94301 United States Department of Biomedical Engineering and Department of Materials Science and Engineering Carnegie Mellon University Pittsburgh Pennsylvania 15213 United States Department of Bioengineering University of California Los Angeles Los Angeles California 90095 United States School of Chemistry Chemical Engineering and Biotechnology Nanyang Technological University Singapore 637457 Singapore Nanobionics Group Department of Chemical and Biological Engineering Monash University Clayton Australia 3800 Monash

Humans rely increasingly on sensors to address grand challenges and to improve quality of life in the era of digitalization and big data. For ubiquitous sensing, flexible sensors are developed to overcome the limitations of conventional rigid counterparts. Despite rapid advancement in bench-side research over the last decade, the market adoption of flexible sensors remains limited. To ease and to expedite their deployment, here, we identify bottlenecks hindering the maturation of flexible sensors and propose promising solutions. We first analyze continued...challenges in achieving satisfactory sensing performance for real-world applications and then summarize issues in compatible sensor-biology interfaces, followed by brief discussions on powering and connecting sensor networks. Issues en route to commercialization and for sustainable growth of the sector are also analyzed, highlighting environmental concerns and emphasizing nontechnical issues such as business, regulatory, and ethical considerations. Additionally, we look at future intelligent flexible sensors. In proposing a comprehensive roadmap, we hope to steer research efforts towards common goals and to guide coordinated development strategies from disparate communities. Through such collaborative

关键词： soft materials mechanics engineering flexible electronics conformable sensors bioelectronics human-machine interfaces body area sensor networks technology translation sustainable electronics

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Utilizing Data Clustering for Hypotheses Discovery in Multimodal Exercise and Health Interventions with Limited Sample Size 22

Utilizing Data Clustering for Hypotheses Discovery in Multim...

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Proceedings of the 2022 6th International Conference on Computational Biology and Bioinformatics

作者： Mckay Russell Guanrong Cai Steven Merino Clemente Rodriguez Zachary Scholefield Jared Moore George Salem Chengwei Lei Department of Computer and Electrical Engineering and Computer Science California State University Bakersfield USA Division of Biokinesiology and Physical Therapy University of Southern California USA

ISBN: (纸本)9781450397636

Multimodal exercise (MME) interventions are beneficial for physical fitness, psychosocial health, cognition, or combinations of these aspects of health and wellness in healthy and clinical populations. However, MME intervention studies are laborious to conduct and difficult to assess due to the number of constructs needed to be assessed. The current study is a secondary analysis of the data obtained from the Golf for Healthy Aging (GHA) exercise intervention study. The goal of this work was to develop an analytical framework, using mathematical abstraction and modified K-means clustering, to assess the interrelations of GHA outcome variables, in order to discover novel, testable hypotheses regarding intervention effects for future studies.

关键词： clustering data mining computational kinesiology multimodal exercise

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Unbiased and Multilevel Methods for a Class of Diffusions Partially Observed via Marked Point Processes

arXiv

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arXiv 2023年

作者： Alvarez, Miguel Jasra, Ajay Ruzayqat, Hamza Applied Mathematics and Computational Science Program Computer Electrical and Mathematical Sciences and Engineering Division King Abdullah University of Science and Technology Thuwal23955 Saudi Arabia

In this article we consider the filtering problem associated to partially observed diffusions, with observations following a marked point process. In the model, the data form a point process with observation times that have its intensity driven by a diffusion, with the associated marks also depending upon the diffusion process. We assume that one must resort to time-discretizing the diffusion process and develop particle and multilevel particle filters to recursively approximate the filter. In particular, we prove that our multilevel particle filter can achieve a mean square error (MSE) of O(∈2) (∈ > 0 and arbitrary) with a cost of O(∈-2.5) versus using a particle filter which has a cost of O(∈-3) to achieve the same MSE. We then show how this methodology can be extended to give unbiased (that is with no time-discretization error) estimators of the filter, which are proved to have finite variance and with high-probability have finite cost. Finally, we extend our methodology to the problem of online static-parameter estimation. Key words: Unbiased Methods, Multilevel Monte Carlo, Non-Linear Filtering, Point Processes, Parameter *** Codes 60G55, 60G35, 62M20, 62F30 © 2023, CC BY.

关键词： Diffusion

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