检索结果-内蒙古大学图书馆

2012 38th IEEE Photovoltaic Specialists Conference

作者： Liang Huang Husam Hamza Abu-Safe Matthew Young Seth Shumate Benjamin Newton Hameed Naseem Shui-Qing Yu Department of Electrical Engineering Microelectronics-Photonics Program University of Arkansas Fayetteville AR USA Department of Electrical Engineering University of Arkansas Fayetteville AR USA Natural science division Lebanese American University Lebanon Microelectronics-Photonics Program University of Arkansas Fayetteville AR USA

In this study we present the fabrication process and characterization techniques to integrate metallic nanostructures on the surface of crystalline Si (c-Si) solar cells. These structures are designed to enhance light trapping at particular wavelengths [2]. Tuning the wavelength to maximize the efficiency can be achieved by changing the sizes and shapes of these structures. A special design of these structures atop c-Si solar cell is expected to affect the absorption near the band gap. These structures have been fabricated by electron beam lithography on c-Si substrates. The processing integration and preliminary characterization results of metallic nanostructures on c-Si solar cells are reported.

关键词： Photovoltaic cells Absorption Plasmons Silicon Gold Nanowires

来源：评论

学校读者我要写书评

暂无评论

Selective gas sensing with a single graphene-on-silicon transistor

Selective gas sensing with a single graphene-on-silicon tran...

引用

IEEE Silicon Nanoelectronics Workshop (SNW)

作者： A.A. Balandin S. Rumyantsev G. Liu M.S. Shur R.A. Potyrailo Nano-Device Laboratory Department of Electrical Engineering and Materials Science and Engineering Program Bourns College of Engineering University of California Riverside Riverside CA USA Center for Integrated Electronics and Department of Electrical Computer and Systems Engineering Rensselaer Polytechnic Institute Troy NY USA Ioffe Physical-Technical Institute Russian Academy of Science Saint Petersburg Russia Chemistry and Chemical Engineering GE Global Research Center Niskayuna NY USA

The low-frequency 1/f noise in graphene transistors has been studied extensively owing to the proposed graphene applications in analog devices and communication systems [1-5]. The studies were motivated by the fact that the low-frequency noise can be up-converted by device nonlinearity and contribute to the phase noise of the system. Similarly, the sensor sensitivity is often limited by the electronic low-frequency noise. Therefore, noise is usually considered as one of the main limiting factors for the device or overall system operation. However, the electronic noise spectrum itself can be used as a sensing parameter increasing the sensor sensitivity and selectivity. Here, we show that vapors of different chemicals produce distinguishably different effects on the low-frequency noise spectra of the graphene-on-Si transistor. Our study showed that some gases change the electrical resistance of pristine graphene devices without changing their low-frequency noise spectra while other gases modify the noise spectra by inducing Lorentzian components with distinctive features. The characteristic corner frequency f C of the Lorentzian noise bulges in graphene devices is different for different chemicals and varies from f C =10 - 20 Hz for tetrahydrofuran to f C =1300 - 1600 Hz for chloroform. We tested the selected set of chemicals vapors on different graphene device samples and alternated different vapors for the same samples. The obtained results indicate that 1/f noise in combination with other sensing parameters can allow one to achieve the selective gas sensing with a single pristine graphene transistor. Our method of gas sensing with graphene does not require graphene surface functionalization or fabrication of an array of the devices with each tuned to a certain chemical. The observation of the Lorentzian components in the vapor-exposed graphene can also help in developing an accurate theoretical description of the noise mechanism in graphene.

关键词： Transistors Sensors Low-frequency noise Chemicals Gases Physics

来源：评论

学校读者我要写书评

暂无评论

On the mixed discretization of the time domain magnetic field integral equation

On the mixed discretization of the time domain magnetic fiel...

引用

International Conference on Electromagnetics in Advanced Applications (ICEAA)

作者： H. A. Ülkü I. Bogaert K. Cools F. P. Andriulli H. Bağci Division of Physical Science and Engineering King Abdullah University for Science and Technology Thuwal Saudi Arabia Department of Information Technology Ghent University Ghent Belgium Department of Electrical and Electronic Engineering University of Nottingham Nottingham UK Microwave Department TELECOM Bretagne Brest France

Time domain magnetic field integral equation (MFIE) is discretized using divergence-conforming Rao-Wilton-Glisson (RWG) and curl-conforming Buffa-Christiansen (BC) functions as spatial basis and testing functions, respectively. The resulting mixed discretization scheme, unlike the classical scheme which uses RWG functions as both basis and testing functions, is “proper”: Testing functions belong to dual space of the basis functions. Numerical results demonstrate that the marching on-in-time (MOT) solution of the mixed discretized MFIE yields more accurate results than that of classically discretized MFIE.

关键词： Testing Integral equations Magnetic fields Time domain analysis Current density Electronic mail Polynomials

来源：评论

学校读者我要写书评

暂无评论

Large-area (> 50 cm × 50 cm), freestanding, flexible, optical membranes of Cd-free nanocrystal quantum dots

Large-area (> 50 cm × 50 cm), freestanding, flexible, optic...

引用

IEEE Photonics Conference (IPC)

作者： Evren Mutlugun Pedro Ludwig Hernandez Martinez Cuneyt Eroglu Yasemin Coskun Talha Erdem Vijay K. Sharma Emre Unal Subhendu K. Panda Stephen G. Hickey Nikolai Gaponik Alexander Eychmüller Hilmi Volkan Demir Department of Physics Department of Electrical and Electronics Engineering and UNAM-Institute of Materials Science and Nanotechnology Bilkent University Ankara Turkey Luminous Center of Excellence for Semiconductor Lighting and Displays School of Electrical and Electronic Engineering Division of Microelectronics School of Mathematical and Physical Sciences Nanyang Technological University Singapore Physical Chemistry/Electrochemistry Technical University of Dresden Dresden Germany

Colloidal semiconductor quantum dots (QDs) have been extensively explored for numerous applications ranging from optoelectronics to biotechnology. This strong demand for the colloidal QDs arises because of their favorable optical and electronic properties. From the application points of view, QDs typically need to be used in their solid form, as opposed to their as-synthesized dispersion form. For immobilization of QDs and homogeneity of their films, various polymers have been used to host QDs within solid media. However, the integration of QDs into a polymeric medium is commonly complex, which requires a high level of understanding to provide optical quality.

关键词： Optical device fabrication Optical films Optical imaging Indium phosphide Light emitting diodes Optical polymers

来源：评论

学校读者我要写书评

暂无评论

Epidemic reemergence in adaptive complex networks

引用

physical Review E 2012年第3期85卷 036107-036107页

作者： J. Zhou G. Xiao S. A. Cheong X. Fu L. Wong S. Ma T. H. Cheng Division of Communication Engineering School of Electrical and Electronic Engineering Nanyang Technological University Singapore 639798 Division of Physics and Applied Physics School of Physical and Mathematical Sciences Nanyang Technological University 21 Nanyang Links Singapore 637371 Computing Science Department Institute of High Performance Computing Singapore 138623 School of Computing and School of Medicine National University of Singapore Singapore 117417 Epidemiology and Disease Control Division Ministry of Health Singapore 169854

The dynamic nature of a system gives rise to dynamical features of epidemic spreading, such as oscillation and bistability. In this paper, by studying the epidemic spreading in growing networks, in which susceptible nodes may adaptively break the connections with infected ones yet avoid being isolated, we reveal a phenomenon, epidemic reemergence, where the number of infected nodes is incubated at a low level for a long time and then erupts for a short time. The process may repeat several times before the infection finally vanishes. Simulation results show that all three factors, namely the network growth, the connection breaking, and the isolation avoidance, are necessary for epidemic reemergence to happen. We present a simple theoretical analysis to explain the process of reemergence in detail. Our study may offer some useful insights, helping explain the phenomenon of repeated epidemic explosions.

关键词： GRAPH theory OSCILLATIONS SIMULATION methods & models EPIDEMICS INFECTION ADAPTIVE control systems

来源：评论

学校读者我要写书评

暂无评论

Combined Measurement of the Higgs Boson Mass in pp Collisions at s=7 and 8 TeV with the ATLAS and CMS Experiments

引用

physical Review Letters 2015年第19期114卷 191803-191803页

作者： G. Aad B. Abbott J. Abdallah O. Abdinov R. Aben M. Abolins O. S. AbouZeid H. Abramowicz H. Abreu R. Abreu Y. Abulaiti B. S. Acharya L. Adamczyk D. L. Adams J. Adelman S. Adomeit T. Adye A. A. Affolder T. Agatonovic-Jovin J. A. Aguilar-Saavedra S. P. Ahlen F. Ahmadov G. Aielli H. Akerstedt T. P. A. Åkesson G. Akimoto A. V. Akimov G. L. Alberghi J. Albert S. Albrand M. J. Alconada Verzini M. Aleksa I. N. Aleksandrov C. Alexa G. Alexander T. Alexopoulos M. Alhroob G. Alimonti L. Alio J. Alison S. P. Alkire B. M. M. Allbrooke P. P. Allport A. Aloisio A. Alonso F. Alonso C. Alpigiani A. Altheimer B. Alvarez Gonzalez D. Álvarez Piqueras M. G. Alviggi B. T. Amadio K. Amako Y. Amaral Coutinho C. Amelung D. Amidei S. P. Amor Dos Santos A. Amorim S. Amoroso N. Amram G. Amundsen C. Anastopoulos L. S. Ancu N. Andari T. Andeen C. F. Anders G. Anders J. K. Anders K. J. Anderson A. Andreazza V. Andrei S. Angelidakis I. Angelozzi P. Anger A. Angerami F. Anghinolfi A. V. Anisenkov N. Anjos A. Annovi M. Antonelli A. Antonov J. Antos F. Anulli M. Aoki L. Aperio Bella G. Arabidze Y. Arai J. P. Araque A. T. H. Arce F. A. Arduh J-F. Arguin S. Argyropoulos M. Arik A. J. Armbruster O. Arnaez V. Arnal H. Arnold M. Arratia O. Arslan A. Artamonov G. Artoni S. Asai N. Asbah A. Ashkenazi B. Åsman L. Asquith K. Assamagan R. Astalos M. Atkinson N. B. Atlay B. Auerbach K. Augsten M. Aurousseau G. Avolio B. Axen M. K. Ayoub G. Azuelos M. A. Baak A. E. Baas C. Bacci H. Bachacou K. Bachas M. Backes M. Backhaus E. Badescu P. Bagiacchi P. Bagnaia Y. Bai T. Bain J. T. Baines O. K. Baker P. Balek T. Balestri F. Balli E. Banas Sw. Banerjee A. A. E. Bannoura H. S. Bansil L. Barak S. P. Baranov E. L. Barberio D. Barberis M. Barbero T. Barillari M. Barisonzi T. Barklow N. Barlow S. L. Barnes B. M. Barnett R. M. Barnett Z. Barnovska A. Baroncelli G. Barone A. J. Barr F. Barreiro J. Barreiro Guimarães da Costa R. Bartoldus A. E. Barton P. Bartos A. Bassalat A. Basye R. L. Bates S. J. Batista J. R. Batley M. Battaglia M. Bauce F. Bauer H. S. Bawa J. B. Beach CPPM Aix-Marseille Université and CNRS/IN2P3 Marseille France Homer L. Dodge Department of Physics and Astronomy University of Oklahoma Norman Oklahoma USA Institute of Physics Academia Sinica Taipei Taiwan Institute of Physics Azerbaijan Academy of Sciences Baku Azerbaijan Nikhef National Institute for Subatomic Physics and University of Amsterdam Amsterdam Netherlands Department of Physics and Astronomy Michigan State University East Lansing Michigan USA Department of Physics University of Toronto Toronto Ontario Canada Raymond and Beverly Sackler School of Physics and Astronomy Tel Aviv University Tel Aviv Israel Department of Physics Technion: Israel Institute of Technology Haifa Israel CERN Geneva Switzerland Department of Physics Stockholm University Sweden The Oskar Klein Centre Stockholm Sweden INFN Gruppo Collegato di Udine Sezione di Trieste Udine Italy ICTP Trieste Italy AGH University of Science and Technology Faculty of Physics and Applied Computer Science Krakow Poland Physics Department Brookhaven National Laboratory Upton New York USA Department of Physics Northern Illinois University DeKalb Illinois USA Fakultät für Physik Ludwig-Maximilians-Universität München München Germany Particle Physics Department Rutherford Appleton Laboratory Didcot United Kingdom Oliver Lodge Laboratory University of Liverpool Liverpool United Kingdom Institute of Physics University of Belgrade Belgrade Serbia Laboratorio de Instrumentacao e Fisica Experimental de Particulas-LIP Lisboa Portugal Departamento de Fisica Teorica y del Cosmos and CAFPE Universidad de Granada Granada (Spain) Portugal Department of Physics Boston University Boston Massachusetts USA Joint Institute for Nuclear Research JINR Dubna Dubna Russia INFN Sezione di Roma Tor Vergata Roma Italy Dipartimento di Fisica Università di Roma Tor Vergata Roma Italy Fysiska institutionen Lunds universitet Lund Sweden International Center for Elementary Particle Physics and Depart

A measurement of the Higgs boson mass is presented based on the combined data samples of the ATLAS and CMS experiments at the CERN LHC in the H→γγ and H→ZZ→4ℓ decay channels. The results are obtained from a simultaneous fit to the reconstructed invariant mass peaks in the two channels and for the two experiments. The measured masses from the individual channels and the two experiments are found to be consistent among themselves. The combined measured mass of the Higgs boson is mH=125.09±0.21 (stat)±0.11 (syst) GeV.

关键词： HIGGS bosons RESEARCH COLLISIONS (Nuclear physics) ATLAS (Computer program language) REST mass (Relativity) BOSONS

来源：评论

学校读者我要写书评

暂无评论

Fabrication of site specific amorphous/nanocrystalline silicon composite thin film for solar cells

Fabrication of site specific amorphous/nanocrystalline silic...

引用

2012 38th IEEE Photovoltaic Specialists Conference

作者： B. Newton H. Abu Safe M. Benemara S. Yu H. Naseem Microelectronics Photonics Program University of Arkansas Fayetteville Arkansas USA Department of Electrical Engineering University of Arkansas Fayetteville Fayetteville Arkansas USA Natural Science Division Lebanese American University Lebanon Institute of Nanoscale Material Science and Engineering University of Arkansas Fayetteville Arkansas USA

The absorption properties of amorphous silicon (α-Si) and the electron transport properties of nanocrystalline silicon are combined in a novel composite material for thin film silicon solar cells. In this work a composite film composed of α-Si with site specific areas of nanocrystalline material was created. Al was deposited through a SiO 2 template containing nanometer sized apertures with an approximate diameter of 250 nm onto an α-Si film supported by a ; crystalline silicon substrate. It was then annealed at 350°C. The annealing caused crystallization only at sites where the Al was in contact with the α-Si surface. The AIC created site specific three dimensional nanocrystalline structures embedded in a thin film of α-Si. After grain boundary passivation these nanocrystalline sites will provide pathways for charge carriers that are less defect dense than the α-Si film. TEM samples were fabricated from the composite film utilizing the focus ion beam. The growth characteristics of these 3D nanostructures and the α-Si thin film were characterized utilizing ESEM and the TEM.

关键词： Annealing USA Councils Substrates Platinum Measurement uncertainty Valves

来源：评论

学校读者我要写书评

暂无评论

Design and fabrication of dielectric nanostructured bending adaptor for optical frequencies

Design and fabrication of dielectric nanostructured bending ...

引用

IEEE/LEOS International Conference on Optical MEMS

作者： Yen-Sheng Lu Hongyi Xu Hanhong Gao C. Max Hsieh Baile Zhang Handong Sun George Barbastathis Department of Mechanical Engineering Massachusetts Institute of Technology Cambridge MA USA Division of Physics and Applied Physics School of Physical and Mathematical Sciences Nanyang Technological University Singapore Singapore Department of Electrical Engineering and Computer Science Massachusetts Institute of Technology Cambridge MA USA

We present the first ever design of bending adaptor based on transformation optics at near-infrared frequency (1550 nm). The Si-air nanograting structure with period

关键词： Silicon Nanostructures Etching Optical device fabrication Anisotropic magnetoresistance Optical waveguides

来源：评论

学校读者我要写书评

暂无评论

ERRATUM: 'THE SECOND CATALOG OF ACTIVE GALACTIC NUCLEI DETECTED BY THE FERMI LARGE AREA TELESCOPE' (2011, ApJ, 743, 171)

引用

The Astrophysical Journal 2015年第1期806卷

作者： M. Ackermann M. Ajello A. Allafort E. Antolini W. B. Atwood M. Axelsson L. Baldini J. Ballet G. Barbiellini D. Bastieri K. Bechtol R. Bellazzini B. Berenji R. D. Blandford E. D. Bloom E. Bonamente A. W. Borgland E. Bottacini A. Bouvier J. Bregeon M. Brigida P. Bruel R. Buehler T. H. Burnett S. Buson G. A. Caliandro R. A. Cameron P. A. Caraveo J. M. Casandjian E. Cavazzuti C. Cecchi E. Charles C. C. Cheung J. Chiang S. Ciprini R. Claus J. Cohen-Tanugi J. Conrad L. Costamante S. Cutini A. de Angelis F. de Palma C. D. Dermer S. W. Digel E. do Couto e Silva P. S. Drell R. Dubois L. Escande C. Favuzzi S. J. Fegan E. C. Ferrara J. Finke W. B. Focke P. Fortin M. Frailis Y. Fukazawa S. Funk P. Fusco F. Gargano D. Gasparrini N. Gehrels S. Germani B. Giebels N. Giglietto P. Giommi F. Giordano M. Giroletti T. Glanzman G. Godfrey I. A. Grenier J. E. Grove S. Guiriec M. Gustafsson D. Hadasch M. Hayashida E. Hays S. E. Healey D. Horan X. Hou R. E. Hughes G. Iafrate G. Jóhannesson A. S. Johnson W. N. Johnson T. Kamae H. Katagiri J. Kataoka J. Knödlseder M. Kuss J. Lande S. Larsson L. Latronico F. Longo F. Loparco B. Lott M. N. Lovellette P. Lubrano G. M. Madejski M. N. Mazziotta W. McConville J. E. McEnery P. F. Michelson W. Mitthumsiri T. Mizuno A. A. Moiseev C. Monte M. E. Monzani E. Moretti A. Morselli I. V. Moskalenko S. Murgia T. Nakamori M. Naumann-Godo P. L. Nolan J. P. Norris E. Nuss M. Ohno T. Ohsugi A. Okumura N. Omodei M. Orienti E. Orlando J. F. Ormes M. Ozaki D. Paneque D. Parent M. Pesce- Rollins M. Pierbattista S. Piranomonte F. Piron G. Pivato T. A. Porter S. Rainò R. Rando M. Razzano S. Razzaque A. Reimer O. Reimer S. Ritz L. S. Rochester R. W. Romani M. Roth D. A. Sanchez C. Sbarra J. D. Scargle T. L. Schalk C. SGRO M. S. Shaw E. J. Siskind G. Spandre P. Spinelli A. W. Strong D. J. Suson H. Tajima H. Takahashi T. Takahashi T. Tanaka J. G. Thayer J. B. Thayer D. J. Thompson L. Tibaldo M. Tinivella D. F. Torres G. Tosti E. Troja Y. Uchiyama J. Vandenbroucke V. Vasileiou G. Vianello V. Vitale A. P. Waite E. Walla W. W. Hansen Experimental Physics Laboratory Kavli Institute for Particle Astrophysics and Cosmology Department of Physics and SLAC National Accelerator Laboratory Stanford University Stanford CA 94305 USA Istituto Nazionale di Fisica Nucleare Sezione di Perugia I-06123 Perugia Italy Dipartimento di Fisica Università degli Studi di Perugia I-06123 Perugia Italy Santa Cruz Institute for Particle Physics Department of Physics and Department of Astronomy and Astrophysics University of California at Santa Cruz Santa Cruz CA 95064 USA Department of Astronomy Stockholm University SE-106 91 Stockholm Sweden The Oskar Klein Centre for Cosmoparticle Physics AlbaNova SE-106 91 Stockholm Sweden Department of Physics Royal Institute of Technology (KTH) AlbaNova SE-106 91 Stockholm Sweden Istituto Nazionale di Fisica Nucleare Sezione di Pisa I-56127 Pisa Italy Laboratoire AIM CEA-IRFU/CNRS/Université Paris Diderot Service d'Astrophysique CEA Saclay 91191 Gif sur Yvette France Istituto Nazionale di Fisica Nucleare Sezione di Trieste I-34127 Trieste Italy Dipartimento di Fisica Università di Trieste I-34127 Trieste Italy Istituto Nazionale di Fisica Nucleare Sezione di Padova I-35131 Padova Italy Dipartimento di Fisica 'G. Galilei' Università di Padova I-35131 Padova Italy Dipartimento di Fisica 'M. Merlin' dell'Università e del Politecnico di Bari I-70126 Bari Italy Istituto Nazionale di Fisica Nucleare Sezione di Bari 70126 Bari Italy Laboratoire Leprince-Ringuet École polytechnique CNRS/IN2P3 Palaiseau France Department of Physics University of Washington Seattle WA 98195-1560 USA Institut de Ciències de l'Espai (IEEE-CSIC) Campus UAB 08193 Barcelona Spain INAF-Istituto di Astrofisica Spaziale e Fisica Cosmica I-20133 Milano Italy Agenzia Spaziale Italiana (ASI) Science Data Center I-00044 Frascati (Roma) Italy National Research Council Research Associate National Academy of Sciences Washington DC 20001 USA ASI Science Data Center I-00044 Frascati (Roma)

来源：评论

学校读者我要写书评

暂无评论

Advanced Wheeler cap method for measuring the antenna efficiency

Advanced Wheeler cap method for measuring the antenna effici...

引用

2012 17th International Symposium on Antennas and Propagation, ISAP 2012

作者： Cho, Chihyun Choo, Hosung Kang, No-Weon Kang, Jin-Seob Communication RandD Center Samsung Thales 188 Gumi-dong Bundang-gu Seongnam-si 463-870 Korea Republic of School of Electronic and Electrical Engineering Hongik University 72-1 Sangsu-dong Mapo-gu Seoul 121-791 Korea Republic of Division of Physical Metrology Korea Research Institute of Standards and Science 267 Gajeong-ro Yuseong-gu Daejeon 305-340 Korea Republic of

ISBN: (纸本)9784885522703

In 1959, Wheeler published the theory of the radiansphere, which is the boundary between the far and near field with a distance of λ/2π from an antenna. The inside field of the radiansphere is mainly involved in the loss power and stored energy, while the outside field is concerned with the radiation power. Wheeler's theory is that the radiation power can be removed from the antenna without disturbing the loss power and stored energy when it is shielded by placing the conducting shell on the radiansphere [1]. The conventional Wheeler cap method predicts radiation efficiency by comparing the input resistances (or conductances) in free-space and in the cap [2]. This involves the assumption that the antenna under test (AUT) operates as a simple RLC circuit at the operating frequency. However, efficiency cannot be measured accurately by simply comparing input resistance (or conductances) when the AUT has a more complicated operating principle. To solve this problem, we applied the cascade parallel circuit [3] to the Wheeler cap method. This approach is superior to the conventional Wheeler cap, but it can be only applied to a microstrip patch with a probe feeding structure. © 2012 IEICE.

关键词： Radiation efficiency

来源：评论

学校读者我要写书评

暂无评论

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案：

请选择收藏分类：

通借通还

建议与咨询 留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案： 新增检索档案 确定 取消

请选择收藏分类： 新增自定义分类 确定 取消

通借通还

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

请选择保存的检索档案：

请选择收藏分类：