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Rabi antenna using microstrip add-drop multiplexer for electron warp speed investigation

Chinese Optics Letters 2022年第7期20卷 80-87页

作者： Somchat Sonasang Prakasit Prabpal Piya Sirikan Pratimakorn Hakaew Nhat Truong Pham Preecha Yupapin Kanad Ray Sarawoot Boonkirdram Department of Electronic Technology Faculty of Industrial TechnologyNakhon Phanom UniversityNakhon Phanom 48000Thailand Department of Electrical Technology School of Industrial TechnologySakonnakhon Technical CollegeInstitute of Vocational Education Northeastern Region 2Sakonnakhorn 47000Thailand Division of Computational Mechatronics Institute for Computational ScienceTon Duc Thang UniversityHo Chi Minh City 72915Vietnam Faculty of Electrical and Electronics Engineering Ton Duc Thang UniversityHo Chi Minh City 72915Vietnam Amity School of Applied Sciences Amity University RajasthanJaipurIndia Faubert Lab Universitéde MontréalH3T 1P1 MontréalCanada Facultad de CienciasFisico-Matematicas Benemérita Universidad Autónoma de PueblaAv.San Claudio y Av.18 surCol.San Manuel Ciudad UniversitariaPuebla Pue 72570Mexico Program of Electrical and Electronics Faculty of Industrial TechnologySakon Nakhon Rajabhat UniversitySakon Nakhon 47000Thailand

This work presents experimental results of Rabi antenna characteristics using the coupled line microstrip *** was constructed by a modified coupled line microstrip four-port network,which is known as an add-drop *** driven AC input enters the device via an input port using the suitable frequency and coupled line microstrip ring *** multilevel system is generated by a wave-particle aspect before the two-level system is *** the resonance,the transitions of the states induce the energy called whispering gallery mode(WGM)at the circuit center,which is the squeezed *** generated electron oscillation within the WGM envelope oscillated by the frequency is known as the Rabi *** the successive filtering with continuous AC input via the selected port,the electron cloud warp speed can be generated and achieved inside the two-level *** constructed microstrip ring radius is 25 mm,and the experimental results of the Rabi antenna characteristics are in good agreement with the simulation *** obtained resonant antenna oscillation frequency is 2.103 *** electron cloud warp speed of 1.100c and time dilation of 0.006μs are obtained.

关键词： integrated photonics waveguide microwave photonics Rabi antenna

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Coherent growth and characterization of van der Waals 1T−VSe2 layers on GaAs(111)B using molecular beam epitaxy

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physical Review Materials 2020年第8期4卷 084002-084002页

作者： Tiancong Zhu Dante J. O’Hara Brenton A. Noesges Menglin Zhu Jacob J. Repicky Mark R. Brenner Leonard J. Brillson Jinwoo Hwang Jay A. Gupta Roland K. Kawakami Department of Physics The Ohio State University Columbus Ohio 43210 USA Program in Materials Science and Engineering University of California Riverside California 92521 USA Materials Science Division Lawrence Livermore National Laboratory Livermore California 94550 USA Department of Materials Science and Engineering The Ohio State University Columbus Ohio 43210 USA Department of Electrical and Computer Engineering The Ohio State University Columbus Ohio 43210 USA Semiconductor and Epitaxy Analysis Laboratory The Ohio State University Columbus Ohio 43210 USA

We report epitaxial growth of vanadium diselenide (VSe2) thin films in the octahedrally coordinated (1T) structure on GaAs(111)B substrates by molecular beam epitaxy. Film thickness from a single monolayer (ML) up to 30 ML is demonstrated. Structural and chemical studies using x-ray diffraction, transmission electron microscopy, scanning tunneling microscopy, and x-ray photoelectron spectroscopy indicate high-quality thin films. Further studies show that monolayer VSe2 films on GaAs are not air stable and are susceptible to oxidation within a matter of hours, which indicates that a protective capping layer should be employed for device applications. This work demonstrates that VSe2, a candidate van der Waals material for possible spintronic and electronic applications, can be integrated with III-V semiconductors via epitaxial growth for two- and three-dimensional hybrid devices.

关键词： Chemical bonding Growth Ferromagnets III-V semiconductors Transition metal dichalcogenides Molecular beam epitaxy Reflection high-energy electron diffraction

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Fabrication of photonic resonators in bulk 4H-SiC

arXiv

引用

arXiv 2021年

作者： Schaeper, Otto Cranwell Fröch, Johannes E. Kim, Sejeong Mu, Zhao Toth, Milos Gao, Weibo Aharonovich, Igor School of Mathematical and Physical Sciences Faculty of Science University of Technology Sydney UltimoNSW2007 Australia Department of Electrical and Electronic Engineering University of Melbourne VIC3010 Australia Division of Physics and Applied Physics School of Physical and Mathematical Sciences Nanyang Technological University Singapore637371 Singapore University of Technology Sydney UltimoNSW2007 Australia The Photonics Institute and Centre for Disruptive Photonic Technologies Nanyang Technological University Singapore637371 Singapore

The design and engineering of photonic architectures, suitable to enhance, collect and guide light on chip is needed for applications in quantum photonics and quantum optomechanics. In this work we apply a Faraday cage based oblique angle etch method to fabricate various functional photonic devices from 4H Silicon Carbide - a material that has attracted attention in recent years, due to its potential in optomechanics, nonlinear optics and quantum information. We detail the processing conditions and thoroughly address the geometrical and optical characteristics of the fabricated devices. Employing photoluminescence measurements we demonstrate high quality factors for suspended microring resonators of up to 3500 in the visible range. Such devices will be applicable in the future to augment the properties of SiC in integrated on chip quantum photonics. © 2021, CC BY.

关键词： Silicon carbide

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Bipolar conduction and giant positive magnetoresistance in doped metallic titanium oxide heterostructures

arXiv

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arXiv 2021年

作者： Huang, Ke Wang, Tao Jin, Mengjia Wu, Liang Wang, Junyao Floria Li, Shengyao Qi, Dong-Chen Cheng, Shuying Li, Yangyang Chen, Jingsheng He, Xiaozhong Li, Changjian Pennycook, Stephen J. Wang, X. Renshaw Division of Physics and Applied Physics School of Physical and Mathematical Sciences Nanyang Technological University 21 Nanyang Link 637371 Singapore Institute of Fluid Physics CAEP P. O. Box 919-106 Mianyang621900 China College of Physics and Information Engineering Institute of Micro-Nano Devices & Solar Cells Fuzhou University Fuzhou350108 China School of Material Science and Engineering Kunming University of Science and Technology Yunnan Kunming650093 China Singapore269734 Singapore ARC Centre of Excellence in Future Low-Energy Electronics Technologies School of Chemistry Physics Mechanical Engineering Queensland University of Technology BrisbaneQLD4001 Australia Department of Materials Science and Engineering National University of Singapore 117575 Singapore School of Electrical and Electronic Engineering Nanyang Technological University 50 Nanyang Ave 639798 Singapore

Empowering conventional materials with unexpected magnetoelectric properties is appealing to the multi-functionalization of existing devices and the exploration of future electronics. Recently, owing to its unique effect in modulating a matter's properties, ultra-small dopants, e.g. H, D, and Li, attract enormous attention in creating emergent functionalities, such as superconductivity, and metal-insulator transition. Here, we report an observation of bipolar conduction accompanied by a giant positive magnetoresistance in D-doped metallic Ti oxide (TiOxDy) films. To overcome the challenges in intercalating the D into a crystalline oxide, a series of TiOxDy were formed by sequentially doping Ti with D and surface/interface oxidation. Intriguingly, while the electron mobility of the TiOxDy increases by an order of magnitude larger after doping, the emergent holes also exhibit high mobility. Moreover, the bipolar conduction induces a giant magnetoresistance up to 900% at 6 T, which is ~6 times higher than its conventional phase. Our study paves a way to empower conventional materials in existing electronics and induce novel electronic phases. © 2021, CC BY.

关键词： Metal insulator boundaries

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Ionic Functionalization of Multivariate Covalent Organic Frameworks to Achieve an Exceptionally High Iodine-Capture Capacity

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Angewandte Chemie 2021年第41期133卷

作者： Dr. Yaqiang Xie Dr. Tingting Pan Dr. Qiong Lei Dr. Cailing Chen Dr. Xinglong Dong Dr. Youyou Yuan Dr. Jie Shen Dr. Yichen Cai Dr. Chunhui Zhou Prof. Dr. Ingo Pinnau Prof. Dr. Yu Han Advanced Membranes and Porous Materials (AMPM) Center Physical Sciences and Engineering Division King Abdullah University of Science and Technology (KAUST) Thuwal Saudi Arabia Imaging and Characterization Core Lab KAUST Thuwal Saudi Arabia Material Science and Engineering Program Physical Sciences and Engineering Division KAUST Thuwal Saudi Arabia KAUST Catalysis Center Physical Sciences and Engineering Division KAUST Thuwal Saudi Arabia

Adsorption-based iodine (I 2 ) capture has great potential for the treatment of radioactive nuclear waste. In this study, we apply a “multivariate” synthetic strategy to construct ionic covalent organic frameworks (iCOFs) with a large surface area, high pore volume, and abundant binding sites for I 2 capture. The optimized material iCOF-AB-50 exhibits a static I 2 uptake capacity of 10.21 g g −1 at 75 °C and a dynamic uptake capacity of 2.79 g g −1 at ≈400 ppm I 2 and 25 °C, far exceeding the performances of previously reported adsorbents under similar conditions. iCOF-AB-50 also exhibits fast adsorption kinetics, good moisture tolerance, and full reusability. The promoting effect of ionic groups on I 2 adsorption has been elucidated by experimentally identifying the iodine species adsorbed at different sites and calculating their binding energies. This work demonstrates the essential role of balancing the textural properties and binding sites of the adsorbent in achieving a high I 2 capture performance.

关键词： adsorption Coulomb interaction covalent organic frameworks iodine capture

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Investigating the Vela SNR’s Emission of Electron Cosmic Rays with CALET at the International Space Station 37

Investigating the Vela SNR’s Emission of Electron Cosmic Ra...

引用

37th International Cosmic Ray Conference, ICRC 2021

作者： Motz, Holger Adriani, O. Akaike, Y. Asano, K. Asaoka, Y. Berti, E. Bigongiari, G. Binns, W.R. Bongi, M. Brogi, P. Bruno, A. Buckley, J.H. Cannady, N. Castellini, G. Checchia, C. Cherry, M.L. Collazuol, G. Ebisawa, K. Ficklin, A.W. Fuke, H. Gonzi, S. Guzik, T.G. Hams, T. Hibino, K. Ichimura, M. Ioka, K. Ishizaki, W. Israel, M.H. Kasahara, K. Kataoka, J. Kataoka, R. Katayose, Y. Kato, C. Kawanaka, N. Kawakubo, Y. Kobayashi, K. Kohri, K. Krawczynski, H.S. Krizmanic, J.F. Maestro, P. Marrocchesi, P.S. Messineo, A.M. Mitchell, J.W. Miyake, S. Moiseev, A.A. Mori, M. Mori, N. Motz, H.M. Munakata, K. Nakahira, S. Nishimura, J. de Nolfo, G.A. Okuno, S. Ormes, J.F. Ospina, N. Ozawa, S. Pacini, L. Papini, P. Rauch, B.F. Ricciarini, S.B. Sakai, K. Sakamoto, T. Sasaki, M. Shimizu, Y. Shiomi, A. Spillantini, P. Stolzi, F. Sugita, S. Sulaj, A. Takita, M. Tamura, T. Terasawa, T. Torii, S. Tsunesada, Y. Uchihori, Y. Vannuccini, E. Wefel, J.P. Yamaoka, K. Yanagita, S. Yoshida, A. Yoshida, K. Zober, W.V. Waseda University Faculty of Science and Engineering Global Center for Science and Engineering Okubo 3-4-1 Shinjuku Tokyo Japan Department of Physics University of Florence Via Sansone 1 Sesto Fiorentino50019 Italy INFN Sezione di Florence Via Sansone 1 Sesto Fiorentino50019 Italy Waseda Research Institute for Science and Engineering Waseda University 17 Kikuicho Shinjuku Tokyo162-0044 Japan JEM Utilization Center Human Spaceflight Technology Directorate Japan Aerospace Exploration Agency 2-1-1 Sengen Ibaraki Tsukuba305-8505 Japan Institute for Cosmic Ray Research The University of Tokyo 5-1-5 Kashiwa-no-Ha Chiba Kashiwa277-8582 Japan Department of Physical Sciences Earth and Environment University of Siena via Roma 56 Siena53100 Italy INFN Sezione di Pisa Polo Fibonacci Largo B. Pontecorvo 3 Pisa56127 Italy Department of Physics McDonnell Center for the Space Sciences Washington University One Brookings Drive St. LouisMO63130-4899 United States Heliospheric Physics Laboratory NASA/GSFC GreenbeltMD20771 United States Department of Physics Catholic University of America WashingtonDC20064 United States Center for Space Sciences and Technology University of Maryland Baltimore County 1000 Hilltop Circle BaltimoreMD21250 United States Astroparticle Physics Laboratory NASA/GSFC GreenbeltMD20771 United States Center for Research and Exploration in Space Sciences and Technology NASA/GSFC GreenbeltMD20771 United States Via Madonna del Piano 10 Sesto Fiorentino50019 Italy Department of Physics and Astronomy Louisiana State University 202 Nicholson Hall Baton RougeLA70803 United States Department of Physics and Astronomy University of Padova Via Marzolo 8 Padova35131 Italy INFN Sezione di Padova Via Marzolo 8 Padova35131 Italy Institute of Space and Astronautical Science Japan Aerospace Exploration Agency 3-1-1 Yoshinodai Chuo Kanagawa Sagamihara252-5210 Japan Kanagawa University 3-27-1 Rokkakubashi Kanagawa

The ISS-based Calorimetric Electron Telescope (CALET) is directly measuring the energy spectrum of electron+positron cosmic rays up to 20 TeV. Cosmic-ray electrons of TeV region energy are limited by energy loss to a propagation range of about 1 kpc, therefore the expected sources are a few nearby supernova remnants (SNR), with the Vela SNR dominating the spectrum [1]. The latest spectrum measured by CALET [2] in combination with the positron-only flux published by AMS-02 [3] is fitted with a comprehensive model including nearby pulsars as the source of the positron excess. This model is extended to the TeV region by addition of the flux from the Vela SNR as calculated with DRAGON, with the integrated energy emitted in electron cosmic rays by the SNR as a variable scale factor. Exploring various scenarios for the time and energy dependence of the cosmic-ray release from Vela, under varied propagation conditions, best-fitting interpretations of the spectrum and upper limits on the emission of cosmic-ray electrons by Vela have been derived. © Copyright owned by the author(s).

关键词： Cosmic rays

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Demonstration of broadband topological slow light

arXiv

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arXiv 2022年

作者： Chen, Fujia Xue, Haoran Pan, Yuang Wang, Maoren Hu, Yuanhang Zhang, Li Chen, Qiaolu Han, Song Liu, Gui-Geng Gao, Zhen Zhou, Peiheng Yin, Wenyan Chen, Hongsheng Zhang, Baile Yang, Yihao Interdisciplinary Center for Quantum Information State Key Lab. of Modern Optical Instrumentation College of Information Science and Electronic Engineering Zhejiang University Hangzhou310027 China ZJU-Hangzhou Global Science and Technology Innovation Center Key Lab. of Advanced Micro/Nano Electronic Devices & Smart Systems of Zhejiang ZJU-UIUC Institute Zhejiang University Hangzhou310027 China Jinhua Institute of Zhejiang University Zhejiang University Jinhua321099 China Division of Physics and Applied Physics School of Physical and Mathematical Sciences Nanyang Technological University 21 Nanyang Link Singapore637371 Singapore Centre for Disruptive Photonic Technologies The Photonics Institute Nanyang Technological University 50 Nanyang Avenue Singapore639798 Singapore National Engineering Research Center of Electromagnetic Radiation Control Materials State Key Laboratory of Electronic Thin Film and Integrated Devices University of Electronic Science and Technology of China Chengdu610054 China Department of Electrical and Electronic Engineering Southern University of Science and Technology Shenzhen518055 China

Slow-light devices are able to significantly enhance light-matter interaction due to the reduced group velocity of light, but a very low group velocity is usually achieved in a narrow bandwidth, accompanied by extreme sensitivity to imperfections that causes increased disorder-induced attenuation. Recent theories have suggested an ideal solution to this problem—unidirectional chiral photonic states, previously discovered in structures known as photonic topological insulators, not only resist backscattering from imperfections but can also be slowed down in the entire topological bandgap with multiple windings in the Brillouin zone. Here, we report on the experimental demonstration of broadband topological slow light in a photonic topological insulator. When coupled with periodic resonators that form flat bands, the chiral photonic states can wind many times around the Brillouin zone, achieving an ultra-low group velocity in the entire topological bandgap. This demonstration extends the scope of topological photonics into slow light engineering, and opens a unique avenue in the dispersion manipulation of chiral photonic states. © 2022, CC BY.

关键词： Slow light

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Fusion of convolution neural network, support vector machine and Sobel filter for accurate detection of COVID-19 patients using X-ray images

arXiv

引用

arXiv 2021年

作者： Sharifrazi, Danial Alizadehsani, Roohallah Roshanzamir, Mohamad Joloudari, Javad Hassannataj Shoeibi, Afshin Jafari, Mahboobeh Hussain, Sadiq Sani, Zahra Alizadeh Hasanzadeh, Fereshteh Khozeimeh, Fahime Khosravi, Abbas Nahavandi, Saeid Panahiazar, Maryam Zare, Assef Shariful Islam, Sheikh Mohammed Rajendra, U. Acharya Department of Computer Engineering School of Technical and Engineering Shiraz Branch Islamic Azad University Shiraz Iran Deakin University Geelong Australia Department of Engineering Fasa Branch Islamic Azad University Post Box No 364 Fasa Fars*** Iran Department of Computer Engineering Faculty of Engineering University of Birjand Birjand Iran Computer Engineering Department Ferdowsi University of Mashhad Mashhad Iran Faculty of Electrical and Computer Engineering Biomedical Data Acquisition Lab K. N. Toosi University of Technology Tehran Iran Electrical and Computer Engineering Faculty Semnan University Semnan Iran System Administrator Dibrugarh University Assam786004 India Rajaie Cardiovascular Medical and Research Center Iran University of Medical Sciences Tehran Iran Omid hospital Iran University of Medical Sciences Tehran Iran Institute for Computational Health Sciences University of California San Francisco United States Faculty of Electrical Engineering Gonabad Branch Islamic Azad University Gonabad Iran Institute for Physical Activity and Nutrition Deakin University Melbourne Australia Cardiovascular Division The George Institute for Global Health Australia Sydney Medical School University of Sydney Australia Department of Electronics and Computer Engineering Ngee Ann Polytechnic Singapore Department of Biomedical Engineering School of Science and Technology Singapore University of Social Sciences Singapore Department of Bioinformatics and Medical Engineering Asia University Taiwan

The coronavirus (COVID-19) is currently the most common contagious disease which is prevalent all over the world. The main challenge of this disease is the primary diagnosis to prevent secondary infections and its spread from one person to another. Therefore, it is essential to use an automatic diagnosis system along with clinical procedures for the rapid diagnosis of COVID-19 to prevent its spread. Artificial intelligence techniques using computed tomography (CT) images of the lungs and chest radiography have the potential to obtain high diagnostic performance for Covid-19 diagnosis. In this study, a fusion of convolutional neural network (CNN), support vector machine (SVM), and Sobel filter is proposed to detect COVID-19 using X-ray images. A new X-ray image dataset was collected and subjected to high pass filter using a Sobel filter to obtain the edges of the images. Then these images are fed to CNN deep learning model followed by SVM classifier with ten-fold cross validation strategy. This method is designed so that it can learn with not many data. Our results show that the proposed CNN-SVM with Sobel filtering (CNN-SVM+Sobel) achieved the highest classification accuracy of 99.02% in accurate detection of COVID-19. It showed that using Sobel filter can improve the performance of CNN. Unlike most of the other researches, this method does not use a pre-trained network. We have also validated our developed model using six public databases and obtained the highest performance. Hence, our developed model is ready for clinical application. Copyright © 2021, The Authors. All rights reserved.

关键词： Data mining

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Enhanced metal-insulator transition in freestanding VO2 down to 5 nm thickness

arXiv

引用

arXiv 2021年

作者： Han, Kun Wu, Liang Cao, Yu Wang, Hanyu Ye, Chen Huang, Ke Motapothula, M. Xing, Hongna Li, Xinghua Qi, Dong-Chen Li, Xiao Renshaw Wang, X. Division of Physics and Applied Physics School of Physical and Mathematical Sciences Nanyang Technological University 21 Nanyang Link 637371 Singapore Key Laboratory of Structure Functional Regulation of Hybrid Materials Ministry of Education Institutes of Physical Science and Information Technology Anhui University Hefei230601 China School of Material Science and Engineering Kunming University of Science and Technology Yunnan Kunming650093 China Department of Electrical and Computer Engineering National University of Singapore 4 Engineering Drive 3 Singapore117583 Singapore School of Physics and Technology Nanjing Normal University Nanjing210023 China Department of Physics and Astronomy Uppsala University Box 516 UppsalaSE-75120 Sweden Department of Physics SRM University AP Andhra Pradesh Amaravati522-502 India School of Physics Northwest University Xi'an710069 China Centre for Materials Science School of Chemistry and Physics Queensland University of Technology BrisbaneQLD4001 Australia School of Electrical and Electronic Engineering Nanyang Technological University 50 Nanyang Ave 639798 Singapore

Ultrathin freestanding membranes with a pronounced metal-insulator transition (MIT) provides huge potential in future flexible electronic applications as well as a unique aspect of the study of lattice-electron interplay. However, the reduction of the thickness to an ultrathin region (a few nm) is typically detrimental to the MIT in epitaxial films, and even catastrophic for their freestanding form. Here, we report an enhanced MIT in VO2-based freestanding membranes, with a lateral size up to millimetres and VO2 thickness down to 5 nm. The VO2-membranes were detached by dissolving a Sr3Al2O6 sacrificial layer between the VO2 thin film and c-Al2O3(0001) substrate, allowing a transfer onto arbitrary surfaces. Furthermore, the MIT in the VO2-membrane was greatly enhanced by inserting an intermediate Al2O3 buffer layer. In comparison to the best available ultrathin VO2-membranes, the enhancement of MIT is over 400% at 5 nm VO2 thickness and more than one order of magnitude for VO2 above 10 nm. Our study widens the spectrum of functionality in ultrathin and large-scale membranes, and enables the potential integration of MIT into flexible electronics and photonics. Copyright © 2021, The Authors. All rights reserved.

关键词： Vanadium dioxide

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Triggered single-photon generation and resonance fluorescence in ultra-low loss integrated photonic circuits

arXiv

引用

arXiv 2022年

作者： Chanana, Ashish Larocque, Hugo Moreira, Renan Carolan, Jacques Guha, Biswarup Anant, Vikas Song, Jin Dong Englund, Dirk Blumenthal, Daniel J. Srinivasan, Kartik Davanco, Marcelo Microsystems and Nanotechnology Division Physical Measurement Laboratory National Institute of Standards and Technology GaithersburgMD20899 United States Institute for Research in Electronics and Applied Physics Maryland NanoCenter University of Maryland College ParkMD20742 United States Theiss Research San DiegoCA92037 United States Department of Electrical Engineering and Computer Science Massachusetts Institute of Technology CambridgeMA02139 United States Department of Electrical and Computer Engineering University of California Santa Barbara Santa BarbaraCA93016 United States Joint Quantum Institute NIST University of Maryland College ParkMD20742 United States Photon Spot Inc. 142 W Olive Ave MonroviaCA91016 United States Center for Opto-Electronic Convergence Systems Korea Institute of Science and Technology Seoul136-791 Korea Republic of

A central requirement for photonic quantum information processing systems lies in the combination of nonclassical light sources and low-loss, phase-stable optical modes. While substantial progress has been made separately towards ultra-low loss, ≤1 dB/m, chip-scale photonic circuits and high brightness single-photon sources, integration of these technologies has remained elusive. Here, we report a significant advance towards this goal, in the hybrid integration of a quantum emitter single-photon source with a wafer-scale, ultra-low loss silicon nitride photonic integrated circuit. We demonstrate triggered and pure single-photon emission directly into a Si3N4photonic circuit with ≈ 1 dB/m propagation loss at a wavelength of ≈ 920 nm. These losses are more than two orders of magnitude lower than reported to date for any photonic circuit with on-chip quantum emitter sources, and >50 % lower than for any prior foundry-compatible integrated quantum photonic circuit, to the best of our knowledge. Using these circuits we report the observation of resonance fluorescence in the strong drive regime, a milestone towards integrated coherent control of quantum emitters. These results constitute an important step forward towards the creation of scaled chip-integrated photonic quantum information systems. Copyright © 2022, The Authors. All rights reserved.

关键词： Photons

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