Zone melting recrystallization of Si films on SiO//2 has produced large-area films with electrical properties approaching those of bulk wafers. The mechanisms of film formation and the use of patterning to control ori...
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ISBN:
(纸本)0444009035
Zone melting recrystallization of Si films on SiO//2 has produced large-area films with electrical properties approaching those of bulk wafers. The mechanisms of film formation and the use of patterning to control orientation and defect distribution are briefly reviewed. Some examples of the use of patterning are: single-grain films have been produced by means of planar constrictions;subboundaries and impurities have been entrained to lie along straight lines separated by approximately 100 mu m through the use of lithographically-defined grating patterns;a vertical-constriction technique has enabled (100) texture to be achieved in 50 mu m-thick Si films;a lithographically-defined orientation filter, which takes advantage of growth-velocity anisotropy, has been used to select a predetermined azimuthal orientation.
作者：
Wyatt Jr., John L.Tan, Han-NgeeMIT
Dep of Electrical Engineering & Computer Science Cambridge MA USA MIT Dep of Electrical Engineering & Computer Science Cambridge MA USA
This paper addresses the equilibrium and transient behavior of a class of nonlinear RLC circuits driven externally by deterministic inputs and internally by thermal noise from the resistors. The relation to concepts a...
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This paper addresses the equilibrium and transient behavior of a class of nonlinear RLC circuits driven externally by deterministic inputs and internally by thermal noise from the resistors. The relation to concepts and physical laws of thermodynamics is clarified on a rigorous basis.
作者：
Day, David R.MIT
Dep of Electrical Engineering & Computer Science Cambridge MA USA MIT Dep of Electrical Engineering & Computer Science Cambridge MA USA
One route to achieve a useful conducting polymer is to combine the conduction properties of a graphite-like material with the processability of common polymers. Such a material can be realized by first processing a co...
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ISBN:
(纸本)0841208239
One route to achieve a useful conducting polymer is to combine the conduction properties of a graphite-like material with the processability of common polymers. Such a material can be realized by first processing a common polymer and then pyrolyzing it in its final form. An organic material which exhibits both excellent stability and high conductivity is heat-treated or pyrolyzed polyimide. Conductive polyimide may be useful in integrated circuits as a gate material because of its conductive properties and its ability to withstand high temperatures. Conductive polyimide gates for field effect transistors (FETs) were fabricated and have been found to be similar to conventional gate transistors. The processing steps and transistor characteristics are discussed.
作者：
Reif, R.MIT
Dep of Electrical Engineering & Computer Science Cambridge MA USA MIT Dep of Electrical Engineering & Computer Science Cambridge MA USA
In order to minimize autodoping, the predeposition cleaning step must be carried out at lower temperatures to limit impurity evaporation, and/or lower pressures to quickly remove from the system any evaporated impurit...
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In order to minimize autodoping, the predeposition cleaning step must be carried out at lower temperatures to limit impurity evaporation, and/or lower pressures to quickly remove from the system any evaporated impurities. Furthermore, it is necessary to carry out the epitaxial deposition step at lower temperatures to minimize the thermal redistribution of impurities. Several techniques have been proposed as possible low-temperature, low-pressure alternatives: Molecular Beam Epitaxy, Ion Cluster Beam Deposition, Ion Beam Epitaxy, and Plasma Enhanced CVD (PECVD). This paper reviews the most recent advances in the PECVD of silicon epitaxial films. It is clear from the results described that the most critical step to achieve low temperature silicon epitaxy is the in-situ predeposition cleaning of the wafer surface.
作者：
Levy, Bernard C.MIT
Dep of Electrical Engineering & Computer Science Cambridge MA USA MIT Dep of Electrical Engineering & Computer Science Cambridge MA USA
A new inverse scattering method is presented for reconstructing the reflectivity function of symmetric two-component wave equations, or the potential of a Schroedinger equation, when the reflection coefficient is rati...
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A new inverse scattering method is presented for reconstructing the reflectivity function of symmetric two-component wave equations, or the potential of a Schroedinger equation, when the reflection coefficient is rational. This method relies on the so-called Chandrasekhar equations which implement the Kalman filter associated with a stationary state-space model. These equations are derived by using first a general layer stripping principle to obtain some differential equations for reconstructing a general scattering medium, and then by specializing these recursions to the case when the probing waves have a state-space model.
Water and water/ethylene glycol mixtures are being investigated for their use as high-voltage dielectrics in pulse power lines. Kerr electrooptic field mapping and voltage/current measurements have been taken with hig...
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Water and water/ethylene glycol mixtures are being investigated for their use as high-voltage dielectrics in pulse power lines. Kerr electrooptic field mapping and voltage/current measurements have been taken with highly purified water over the temperature range 0-30 degree C using parallel plane electrodes with average field strengths up to 160 kV/cm. The Kerr constant of water B was measured to be B approximately equals 3. 4-3. 6 multiplied by 10** minus **1 **4 m/V**2 for free space light wavelength 590 nm and was found to vary only slightly with temperature over the measurement range. Photomultiplier tube measurements at 633 nm at approximately equals 10 degree C found water to have a Kerr constant B approximately equals 2. 7-2. 9 multiplied by 10** minus **1 **4 m/V**2 , while ethylene glycol had a negative Kerr constant B approximately equals -(0. 8-0. 9) multiplied by 10** minus **1 **4 m/V**2 . Water/ethylene glycol mixtures had an essentially linear variation of Kerr constant between these limits as a function of weight fractions, having a zero Kerr constant at about 79% glycol/21% water by weight. It is found that by an appropriate choice of electrode material combinations and voltage polarity, it is possible to have uncharged water, unipolar charged negative or positive water, or bipolar charged water.
作者：
Reif, R.MIT
Dep of Electrical Engineering & Computer Science Cambridge MA USA MIT Dep of Electrical Engineering & Computer Science Cambridge MA USA
Plasma Enhanced CVD (PECVD) is a technique capable of depositing silicon epitaxial layers at relatively low temperatures (700-800 degree C) and with reasonable deposition rates (200-2,000 A/min). This article discusse...
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Plasma Enhanced CVD (PECVD) is a technique capable of depositing silicon epitaxial layers at relatively low temperatures (700-800 degree C) and with reasonable deposition rates (200-2,000 A/min). This article discusses the physics and chemistry of the PECVD process, and its application to the low-temperature deposition of silicon epitaxial films.
作者：
Humblet, Pierre A.MIT
Dep of Electrical Engineering & Computer Science Cambridge MA USA MIT Dep of Electrical Engineering & Computer Science Cambridge MA USA
A simple algorithm is suggested to find a leader in a complete network using O(N log N) messages, each containing at most log N plus i bits, where i is the length of the representation of a node identity. The algorith...
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A simple algorithm is suggested to find a leader in a complete network using O(N log N) messages, each containing at most log N plus i bits, where i is the length of the representation of a node identity. The algorithm illustrates the essential feature necessary to get a small number of messages, namely to give priority to nodes that have already done much work. The communication cost of the algorithm is analyzed.
作者：
Reif, R.MIT
Dep of Electrical Engineering & Computer Science Cambridge MA USA MIT Dep of Electrical Engineering & Computer Science Cambridge MA USA
This paper will review the modeling of autodoping in CVD silicon epitaxy, and will describe the most recent developments in this area. Autodoping usually refers to the unintentional doping of the epitaxial film during...
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This paper will review the modeling of autodoping in CVD silicon epitaxy, and will describe the most recent developments in this area. Autodoping usually refers to the unintentional doping of the epitaxial film during growth. This phenomenon is particularly important when lightly doped layers are deposited on substrates containing heavily doped regions near the surface, and it imposes limitations on the minimum thickness of these lightly doped films. A good model for autodoping makes possible an accurate prediction of these limitations.
作者：
Tung, T.L.Antoniadis, D.A.MIT
Dep of Electrical Engineering & Computer Science Cambridge MA USA MIT Dep of Electrical Engineering & Computer Science Cambridge MA USA
During local oxidation of silicon, the shape of the oxide undergoes drastic transformation. A numerical method that can handle such change with ease is desirable. Integral equations have been previously explored in mo...
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During local oxidation of silicon, the shape of the oxide undergoes drastic transformation. A numerical method that can handle such change with ease is desirable. Integral equations have been previously explored in modeling oxidation. While their use of integral equations provides certain advantages over conventional methods such as the finite difference approximation, those techniques still require calculations within the oxide bulk. This paper reports a Boundary Integral Equation Method (BIEM) that obtains solutions from line integrals along the boundaries. Because it does not require a mesh to subdivide the oxide bulk, it is simple and fast;typical execution speed on a VAX-750 is 30 seconds per time step.
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