作者：
Reif, R.MIT
Dep of Electrical Engineering & Computer Science Cambridge MA USA MIT Dep of Electrical Engineering & Computer Science Cambridge MA USA
Plasma Enhanced CVD (PECVD) is a technique capable of depositing silicon epitaxial layers at relatively low temperatures (700-800 degree C) and with reasonable deposition rates (200-2,000 A/min). This article discusse...
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Plasma Enhanced CVD (PECVD) is a technique capable of depositing silicon epitaxial layers at relatively low temperatures (700-800 degree C) and with reasonable deposition rates (200-2,000 A/min). This article discusses the physics and chemistry of the PECVD process, and its application to the low-temperature deposition of silicon epitaxial films.
作者：
Humblet, Pierre A.MIT
Dep of Electrical Engineering & Computer Science Cambridge MA USA MIT Dep of Electrical Engineering & Computer Science Cambridge MA USA
A simple algorithm is suggested to find a leader in a complete network using O(N log N) messages, each containing at most log N plus i bits, where i is the length of the representation of a node identity. The algorith...
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A simple algorithm is suggested to find a leader in a complete network using O(N log N) messages, each containing at most log N plus i bits, where i is the length of the representation of a node identity. The algorithm illustrates the essential feature necessary to get a small number of messages, namely to give priority to nodes that have already done much work. The communication cost of the algorithm is analyzed.
作者：
Reif, R.MIT
Dep of Electrical Engineering & Computer Science Cambridge MA USA MIT Dep of Electrical Engineering & Computer Science Cambridge MA USA
This paper will review the modeling of autodoping in CVD silicon epitaxy, and will describe the most recent developments in this area. Autodoping usually refers to the unintentional doping of the epitaxial film during...
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This paper will review the modeling of autodoping in CVD silicon epitaxy, and will describe the most recent developments in this area. Autodoping usually refers to the unintentional doping of the epitaxial film during growth. This phenomenon is particularly important when lightly doped layers are deposited on substrates containing heavily doped regions near the surface, and it imposes limitations on the minimum thickness of these lightly doped films. A good model for autodoping makes possible an accurate prediction of these limitations.
作者：
Tung, T.L.Antoniadis, D.A.MIT
Dep of Electrical Engineering & Computer Science Cambridge MA USA MIT Dep of Electrical Engineering & Computer Science Cambridge MA USA
During local oxidation of silicon, the shape of the oxide undergoes drastic transformation. A numerical method that can handle such change with ease is desirable. Integral equations have been previously explored in mo...
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During local oxidation of silicon, the shape of the oxide undergoes drastic transformation. A numerical method that can handle such change with ease is desirable. Integral equations have been previously explored in modeling oxidation. While their use of integral equations provides certain advantages over conventional methods such as the finite difference approximation, those techniques still require calculations within the oxide bulk. This paper reports a Boundary Integral Equation Method (BIEM) that obtains solutions from line integrals along the boundaries. Because it does not require a mesh to subdivide the oxide bulk, it is simple and fast;typical execution speed on a VAX-750 is 30 seconds per time step.
Extensive Kerr electrooptic field mapping and voltage/current measurements have been carried out with highly purified water over the temperature range of T equals 0-30 degree C using parallel plane electrodes with ave...
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Extensive Kerr electrooptic field mapping and voltage/current measurements have been carried out with highly purified water over the temperature range of T equals 0-30 degree C using parallel plane electrodes with average field strengths up to 160 kV/cm. The Kerr constant of water, B, was measured to be B congruent 3. 4-3. 6 multiplied by 10-**1**4m/V**2 for free space light wavelength of 590 nm;it varies only slightly with temperature over the measurement range. For a step high voltage, there is no volume space charge at t equals 0// plus . For times greater than 500 mu s, stainless steel and copper electrodes generally inject positive charge, although under some conditions with mixed electrodes, they injected negative charge. Aluminum electrodes only inject negative charge;while brass electrodes can inject either positive or negative charges. Thus, by an appropriate choice of electrode material combinations and voltage polarity, it is possible to have uncharged water, unipolar charged negative or positive, or bipolar charged water. Generally, the bipolar case allows a higher applied voltage without breakdown, presumably due to the lower electric field strengths at the electrodes caused by the space charge shielding. Although injected space charge increases the stored electric energy over the capacitive space charge free energy, (1/2)Cv**2, for unipolar drift dominated conduction the energy delivered to a resistive load is reduced because of internal dissipation as the charge migrates to the electrodes.
作者：
Yew, PearlWyatt Jr., John L.MIT
Dep of Electrical Engineering & Computer Science Cambridge MA USA MIT Dep of Electrical Engineering & Computer Science Cambridge MA USA
This paper outlines a perturbational approach for the study of delay in MOS logic circuits. Take an inverter, for example, and suppose a nominal input waveform is given and the corresponding output waveform and delay ...
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This paper outlines a perturbational approach for the study of delay in MOS logic circuits. Take an inverter, for example, and suppose a nominal input waveform is given and the corresponding output waveform and delay T have been simulated, calculated or measured. We explain how to find the form of perturbation which tends most strongly to increase or decrease the delay. Since this critical perturbation waveshape can be plotted and visually examined, it can be an aid to engineering insight.
作者：
Schwartz, A.Wang, X.Y.Warde, C.MIT
Dep of Electrical Engineering & Computer Science Cambridge MA USA MIT Dep of Electrical Engineering & Computer Science Cambridge MA USA
A vacuum-demountable prototype elecron-beam-addressed spatial light modulator that consists essentially of an electron gun, a microchannel plate and an electro-optic crystal is being investigated. This paper discusses...
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ISBN:
(纸本)0892525002
A vacuum-demountable prototype elecron-beam-addressed spatial light modulator that consists essentially of an electron gun, a microchannel plate and an electro-optic crystal is being investigated. This paper discusses the underlying principles of operation of the device which center around the interaction of an electron beam with a microchannel plate and the addressing of an electro-optic crystal with a flux of nonmonoenergetic electrons.
作者：
Wintner, E.Fujimoto, J.G.Ippen, E.P.MIT
Dep of Electrical Engineering & Computer Science Cambridge MA USA MIT Dep of Electrical Engineering & Computer Science Cambridge MA USA
Ultrashort light pulses are used to study carrier dynamics in highly excited semiconductor materials. Picosecond pulses from a cw modelocked Nd:YAG laser create carriers and probe nonlinear (Auger) recombination in In...
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ISBN:
(纸本)0892524871
Ultrashort light pulses are used to study carrier dynamics in highly excited semiconductor materials. Picosecond pulses from a cw modelocked Nd:YAG laser create carriers and probe nonlinear (Auger) recombination in InGaAs and InGaAsP epilayers. Femtosecond continuum pulses from a dye oscillator/amplifier system monitor the spectral dynamics of free excitons in CdSe following optical excitation.
作者：
Lewis, T.J.MIT
Dep of Electrical Engineering & Computer Science Cambridge MA USA MIT Dep of Electrical Engineering & Computer Science Cambridge MA USA
The fundamental processes of charge carrier generation and motion in pure hydrocarbon liquids under high electrical stress are reviewed in the light of present knowledge of amorphous phase electronics and of the elect...
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The fundamental processes of charge carrier generation and motion in pure hydrocarbon liquids under high electrical stress are reviewed in the light of present knowledge of amorphous phase electronics and of the electrochemistry of electrode-dielectric interfaces. The existence of quasi-free electron and equally mobile positive hole states in a liquid such as n-hexane makes it possible to develop plausible models for the extremely fast cathode and anode-initiated incipient breakdown discharge processes which have been observed. The discussion covers electronic processes in pure liquids, electrode processes, and breakdown initiation.
For the first time (In,Ga)As/InP n-p-n heterojunction bipolar transistors (HJBTs) applicable to integrated circuits have been fabricated by triple ion implantation. The base has been formed by beryllium ion implantati...
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For the first time (In,Ga)As/InP n-p-n heterojunction bipolar transistors (HJBTs) applicable to integrated circuits have been fabricated by triple ion implantation. The base has been formed by beryllium ion implantation and the collector by silicon ion implantation. The implants were made into an LPE-grown n-n (In,Ga)As/InP heterostructure on an n** plus -InP substrate. This inverted mode emitter-down heterojunction transistor structure demonstrates to a maximum current gain of 7 with no hysteresis in the characteristics. The ideality factors of the I//B versus V//B//E, and I//C versus V//B//E characteristics with V//C//B equals 0, are 1. 25 and 1. 08, respectively, indicating that the defect level in the heterojunction is low and that minority-carrier injection and diffusion is the dominant current flow mechanism.
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