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Annual Conference on Information sciences and Systems (CISS)

作者： Weihao Gao Yury Polyanskiy Institute for Interdisciplinary Information Sciences Tsinghua University Beijing China Department of Electrical Engineering and Computer Science MIT Cambridge MA USA

Classically, error-correcting codes are studied with respect to performance metrics such as minimum distance (combinatorial) or probability of bit/block error over a given stochastic channel. In this paper, a different metric is considered. It is assumed that the block code is used to repeatedly encode user data. The resulting stream is subject to adversarial noise of given power, and the decoder is required to reproduce the data with minimal possible bit-error rate. This setup may be viewed as a combinatorial joint source-channel coding. Two basic results are shown for the achievable noise-distortion tradeoff: the optimal performance for decoders that are informed of the noise power, and global bounds for decoders operating in complete oblivion (with respect to noise level). General results are applied to the Hamming [7, 4, 3] code, for which it is demonstrated (among other things) that no oblivious decoder exist that attains optimality for all noise levels simultaneously.

关键词： Decoding Noise Noise level Kernel Vectors Error correction codes Block codes

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MRS Online Proceedings Library 2014年第1期1648卷 1-6页

作者： Lai, Changquan Thompson, Carl V. Choi, W. K. Singapore MIT Alliance National University of Singapore Singapore Singapore Department of Materials Science and Engineering Massachusetts Institute of Technology Cambridge USA Department of Electrical and Computer Engineering National University of Singapore Singapore Singapore

Ordered arrays of polymeric nanostructures with different shapes were generated using laser interference lithography and plasma etching. Surface energy anisotropy was produced in each nanostructure in the array through oblique angle deposition of a hydrophilic metal. When a water droplet was placed on such a surface, it was found to wet preferentially in the direction of the hydrophilic face. Depending on the shape of the nanostructure and the deposition direction, wetting can be made uni-, bi- or tri-directional. Insights obtained in this study contribute to the understanding of wetting on rough, chemically heterogeneous surfaces and provide new methods to engineer functional surfaces for the control of wetting directions.

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Large enhancement in photoluminescence of ZnO grown on strain relaxed nanoporous GaN template by PLD

Large enhancement in photoluminescence of ZnO grown on strai...

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CLEO: science and Innovations, CLEO_SI 2014

作者： Tang, Jie Deng, Liyuan Huang, Jian Seetoh, I.P. Ansah-Antwi, K.K. Venkatesan, T. Chua, Soo Jin Author Electrical and Computer Engineering National University of Singapore Singapore 117576 Singapore NUSNNI-Nanocore National University of Singapore Singapore 117576 Singapore Singapore-MIT Alliance National University of Singapore 4 Engineering Drive 3 Singapore 117576 Singapore Institute of Materials and Research Engineering Agency for Science Technology and Research 3 Research Link Singapore 117602 Singapore

ZnO thin film was grown over nanoporous GaN by PLD. Up to 8-fold PL intensity enhancement has been achieved. This is attributed to relieved misfit stress and reduced defect density. CLEO:2014 © 2014 OSA.

ISBN: (纸本)9781557529992

关键词： Gallium nitride

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Novel GaAs0.71P0.29/Si tandem step-cell design

Novel GaAs0.71P0.29/Si tandem step-cell design

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2014 IEEE 40th Photovoltaic Specialist Conference (PVSC)

作者： Sabina Abdul Hadi Evelina Polyzoeva Tim Milakovich Mayank Bulsara Judy L. Hoyt Eugene A. Fitzgerald Ammar Nayfeh Department of Electrical Engineering and Computer Science (EECS) Masdar Institute of Science and Technology Abu Dhabi UAE MIT Microsystems Technology Laboratories Cambridge MA USA

ISBN: (纸本)9781479943975

A novel GaAs 0.71 P 0.29 /Si tandem cell is proposed and simulated. In order to grow GaAs 0.71 P 0.29 layers on Si, Si 1-y Ge y (SiGe) buffer layers can be used but optical losses are expected. To reduce large optical losses a wafer bonded/layer transferred structure can be used that eliminates the SiGe buffer layer. In this work we propose a novel tandem step-cell design that partially exposes the underlying Si cell for both wafer bonded and SiGe based cells. We demonstrate by experiment and simulation mitigation of the optical losses associated with SiGe buffer layers. For an optimized GaAs 0.71 P 0.29 /Si tandem cell without the step cell design, simulations estimate ~20% efficiency for the bonded structure and ~3% for the as grown structure with a SiGe buffer. With the proposed novel step-cell design, optimum efficiency of bonded structure increases to ~32% while for structures with SiGe the simulated efficiency reaches ~23%. Optimum exposure of bottom cell area increases with increasing thickness and lifetime of layers above the bottom Si cell.

关键词： Silicon Silicon germanium Optical buffering Buffer layers Photovoltaic cells Optical losses Gallium arsenide

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Study of AlGaN/GaN HEMT degradation through TCAD simulations

Study of AlGaN/GaN HEMT degradation through TCAD simulations

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International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)

作者： Hiu Y. Wong Nelson Braga R. V. Mickevicius Feng Gao Tomás Palacios TCAD Silicon Engineering Group Synopsys Inc. Mountain View CA USA Department of Electrical Engineering and Computer Science MIT Cambridge MA USA

This paper studies, through Three-Dimensional (3D) TCAD simulations, the formation of gate edge pits on the drain-side of GaN high electron mobility transistors (HEMTs) under electrical stress conditions. These pits are believed to be formed due to electrochemical reactions. The simulations predict that holes, which are necessary to initiate the electrochemical reaction but rare under regular HEMT operating conditions, can be generated through trap-assisted, band-to-band tunneling (B2B TAT). The impact of the electrical behavior of the pit (insulator or metal) on the output characteristics (I D -V D ) of the HEMTs were also studied. Insulator-type pits degrade the ON-resistance, R D , while metal-types do not. At medium V D , both types of pit degrade I D , which will be recovered at higher V D . But metal-type requires larger V D to restore the I D . As the pits grow, the hole generation rate first increases (more with metal pit), then decrease after the pit-to-width ratio exceeds 20%.

关键词： HEMTs Gallium nitride Logic gates Insulators Aluminum gallium nitride Degradation

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Intraoperative hemodynamics predict postoperative mortality in orthotopic liver transplantation

Intraoperative hemodynamics predict postoperative mortality ...

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Annual International Conference of the IEEE engineering in Medicine and Biology Society

作者： Varesh Prasad Nicola Toschi Antonio Canichella Martina Marcellucci Filadelfo Coniglione Mario Dauri Maria Guerrisi Thomas Heldt the Harvard-MIT Division of Health Sciences and Technology Massachusetts Institute of Technology Cambridge MA USA. the Medical Physics Section Department of Biomedicine and Prevention University of Rome "Tor Vergata" Rome Italy and the Department of Radiology Athinoula A. Martinos Center for Biomedical Imaging Massachusetts General Hospital and Harvard Medical the Medical Physics Section Department of Biomedicine and Prevention University of Rome "Tor Vergata" Rome Italy. the Department of Emergency and Critical Care Medicine University Hospital and University of Rome "Tor Vergata" Rome Italy. the Institute for Medical Engineering and Science and the Department of Electrical Engineering and Computer Science Massachusetts Institute of Technology Cambridge MA USA.

ISBN: (纸本)9781424492695

Liver transplantation remains the only curative treatment option for a variety of end-stage liver diseases. Prediction of major adverse events following surgery has traditionally focused on static predictors that are known prior to surgery. The effects of intraoperative management can now be explored due to the archiving of high-resolution monitoring data. We extracted intraoperative hemodynamic trend data of 55 patients undergoing orthotopic liver transplantation (OLT) and computed 12 features from the systolic arterial blood pressure (ABP), cardiac index, central venous pressure (CVP), and stroke volume variation (SVV) signals. Using a logistic regression classifier with a leave-one-out cross-validation procedure, we selected subsets of these features to predict mortality up to 180 days after surgery. Best performance was achieved with a combination of 3 features - median absolute deviation (MAD) of ABP, median CVP, and time spent with SVV < 10% - reaching an area under the receiver-operating characteristic (or c-statistic) of 0.808. Odds ratios (OR) computed from the coefficients of the multivariate logistic regression model constructed from these features showed that greater time spent with SVV < 10% (OR= 0.981 min-1, p= 0.001) and greater MAD of systolic ABP (OR= 0.696 mmHg-1, p= 0.026) were significantly associated with survival. Adding preoperative measures such as age and serum concentrations of albumin, bilirubin, and creatinine failed to improve performance of the prediction model. These results show that the course of intraoperative hemodynamics can predict 180-day mortality after OLT.

关键词： OLT OR CVP

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Back Cover: Synthetic Biology: A New Tool for the Trade (ChemBioChem 16/2015)

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ChemBioChem 2015年第16期16卷 2404-2404页

作者： Bijan Zakeri Department of Electrical Engineering and Computer Science Department of Biological Engineering Research Laboratory of Electronics Massachusetts Institute of Technology 77 Massachusetts Avenue Cambridge MA 02139 USA MIT Synthetic Biology Center 500 Technology Square Cambridge MA 02139 USA

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Optimal passivity enforcement of state-space models via localization methods

Optimal passivity enforcement of state-space models via loca...

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IEEE Topical Meeting on electrical Performance of Electronic Packaging (EPEPS)

作者： Zohaib Mahmood Stefano Grivet-Talocia Giuseppe C. Calafiore Luca Daniel Dept. Electrical Engineering and Computer Science MIT Cambridge MA USA Dept. Electronics and Telecommunications Politecnico di Torino Torino Italy Dept. Control and Computer Engineering Politecnico di Torino Torino Italy

ISBN: (纸本)9781479936441

This work presents a novel approach for passivity enforcement of state-space macromodels, based on nonsmooth localization algorithms applied to a convex formulation of the passivity constraints. The main advantages of proposed scheme are guaranteed optimality and limited required computational resources. Compared to convex formulations based on a direct implementation of Bounded Real Lemma we are able to reduce both the memory and time requirements by orders of magnitude.

关键词： Ellipsoids Computational modeling Mathematical model Memory management Integrated circuit modeling Solid modeling Integrated circuit interconnections

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Advanced motor monitoring and diagnostics

Advanced motor monitoring and diagnostics

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Annual Conference for Protective Relay Engineers

作者： Pero Ostojic Arijit Banerjee Dhaval Patel Wrichik Basu Shahid Ali Application Engineer GE Digital Energy Markham Ontario Canada Electrical Engineering and Computer Science MIT Cambridge MA USA Electrical Engineering and Computer Science NC State University Raleigh NC USA GE GI. Research Bangalore Karnataka India Engineer GE GI. Research Bangalore Karnataka India

Modern motor protection relays are capable of long term failure monitoring and diagnostics based on information collected by a powerful data acquisition system. This includes predicting life time of motors. This paper presents an advanced algorithm capable of performing such tasks. It is applicable to different types of rotating electric machines depending on their design. The components are: stator turn fault detection and rotor bar fault detection. Detection methods are based on calculating the cross coupled impedance and analyzing the current frequency signature of the motor. The presentation includes a theoretical background, simulated results and testing results performed on a particular physical model.

关键词： Voltage measurement Robustness Impedance measurement Impedance Monitoring Integrated circuits MATLAB

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Comparative study of the ferromagnetic resonance behavior of coupled rectangular and circular Ni80Fe20 rings

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Physical Review B 2014年第2期89卷 024302-024302页

作者： G. Shimon A. O. Adeyeye C. A. Ross Department of Electrical and Computer Engineering 4 Engineering Drive 3 National University of Singapore Singapore 117576 Singapore Singapore-MIT Alliance 4 Engineering Drive 3 Singapore 117576 Singapore Department of Materials Science and Engineering Massachusetts Institute of Technology Cambridge MA 02139 USA

A systematic investigation of the dynamic behavior of Ni80Fe20 ring arrays using broadband ferromagnetic resonance spectroscopy as a function of inter-ring spacing and ring thickness is presented. Four distinct resonance modes were found for rectangular rings compared to the two modes seen in circular rings of identical width due to the presence of sharp corners and nonuniform demagnetization field distribution. The resonance peaks were sensitive to the inter-ring spacing and the ring thickness due to magnetostatic coupling. Micromagnetic simulations and analytical calculations are compared with the experiment results.

关键词： FERROMAGNETIC resonance FERROMAGNETISM SPECTRUM analysis DEMAGNETIZATION MAGNETIC fields

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