In this article, we have studied the role of photoeffects in the formation of aluminum back surface field (BSF) contacts on p-type silicon wafers by using different lamp configurations in rapid thermal processing (RTP...
In this article, we have studied the role of photoeffects in the formation of aluminum back surface field (BSF) contacts on p-type silicon wafers by using different lamp configurations in rapid thermal processing (RTP). Use of photons of wavelengths less than 800 nm in conjunction with infrared and visible photons in RTP resulted in the reduction of processing time from 202 to 138 s and the processing temperature from 890 to 850 °C. The reduction in the overall thermal budget used for BSF contact formation is a direct result of photon assisted RTP. The availability of a large number of high energy photons on the metal surface also resulted in improved electrical, structural and mechanical properties of the processed device.
We address the problem of efficient circuit switching in wide area networks. The solution provided is based on finding optimal routes for lightpaths and semilightpaths. A lightpath is a fully optical transmission path...
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We address the problem of efficient circuit switching in wide area networks. The solution provided is based on finding optimal routes for lightpaths and semilightpaths. A lightpath is a fully optical transmission path, while a semilightpath is a transmission path constructed by chaining several lightpaths together, using wavelength conversion at their junctions. The problem thus is to find an optimal lightpath/semilightpath in the network in terms of the cost of wavelength conversion and the cost of using the wavelengths on links. We first present fast, efficient algorithms both for the general problem and for a natural restricted version. The new algorithms outperform earlier work, providing time improvements amounting to an almost linear time factor in most cases. Also, all our algorithms can be implemented on the network in a distributed way.
The use of tungsten halogen lamps and the deuterium lamp as the source of thermal and optical energies has been exploited to deposit thin films of Ta2O5 on Si and conducting substrates, The leakage current densities a...
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The use of tungsten halogen lamps and the deuterium lamp as the source of thermal and optical energies has been exploited to deposit thin films of Ta2O5 on Si and conducting substrates, The leakage current densities are as low as 10(-10) A/cm(2) for gate voltage under 5V. Photons in visible, ultraviolet, and vacuum ultraviolet (lambda < 800 nm) regions provide higher bulk and surface diffusion coefficients as well as reduced activation energy for the chemical process involved in the chemical vapor deposition process. The low thermal mass of the substrate provides limited reaction processing capability. The photochemical and photophysical processes allow the participating atoms and molecules to adjust their bond geometries and occupy sites which result in overall reduction of stress and strain energy and provide materials with overall low microscopic defects at low processing temperature and with high throughput. New experimental results of Al-Ta2O5-Si3N4-poly Si-Al structure are presented. The leakage current-voltage characteristics are better than those reported by other researchers.
Thin films of Al-1.27 wt %Y were deposited by dc magnetron sputtering. Adding yttrium to the aluminum drastically reduced the metal’s grain size and also improve the uniformity of grain size distribution. Upon anneal...
Thin films of Al-1.27 wt %Y were deposited by dc magnetron sputtering. Adding yttrium to the aluminum drastically reduced the metal’s grain size and also improve the uniformity of grain size distribution. Upon annealing at a temperature of 450 °C for 30 min, grain growth was insignificant, while the electrical resistance dropped from 6.05 to 2.95 μΩ cm. The as deposited films consisted of Al4Y and α-Al supersaturated with yttrium. After annealing, β-Al3Y precipitated instead of α-Al3Y. The Al–Y films had much higher resistance to hillock formation than did Al-1 wt %Si films.
A high-resolution time-frequency distribution is applied to the study of violin vibrato. Our analysis indicates that the frequency modulation induced by the motion of the stopped finger on the string is accompanied by...
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The development of materials with dielectric constant (K) less than SiO2 (K=3.9) is essential to meet the stringent speed, power dissipation and crosstalk requirements that are driving the low power integrated circuit...
The development of materials with dielectric constant (K) less than SiO2 (K=3.9) is essential to meet the stringent speed, power dissipation and crosstalk requirements that are driving the low power integrated circuit (IC) paradigm. Both the low K dielectric and the processing methodology used for it should satisfy several important criteria before the technique can be accepted in future mainstream low power IC manufacturing. We had reported earlier a chemical vapor deposition (CVD) technique for the deposition of DuPont's Teflon amorphous fluoropolymer 1600 (bulk K=1.93) using the principle of direct liquid injection. The processing was carried out with and without an ultra violet (UV) light source in a computerized rapid isothermal processing (RIP) system. Recently, we have extensively characterized the films and examined the suitability of our technique in light of some of the requirements of the future IC industry. Our results indicate that the processed films exceed several of the established dielectric performance standards outlined in recent roadmaps for sub 0.25 μm ICs. The film properties were improved when the UV source was used during processing. CVD processed films in general demonstrated significant improvements in terms of manufacturability, throughput, cost, and dielectric properties over the same films processed by alternate techniques.
Recent advances in technology make it possible to integrate multiple processors into a single chip to build high performance parallel programmable digital signal processors (PPDSPs). These processors are expected to r...
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Recent advances in technology make it possible to integrate multiple processors into a single chip to build high performance parallel programmable digital signal processors (PPDSPs). These processors are expected to replace many dedicated digital signal processors to implement important image/signal processing algorithms such as discrete cosine transform (DCT). The paper addresses the issue of how to compare fast 2D-DCT algorithms when they are implemented on a PPDSP. Previously, the efficiency of these algorithms is compared based on the number of operations. This comparison is reasonable when these algorithms are implemented on a dedicated DSP. However, this comparison may not be suitable for general-purpose PPDSPs. The paper proposes to use three parameters, the number of data accesses, the number of communications, and the distance of communications, as new criterion for performance comparison of DCT algorithms. An algorithm-level technique is developed to estimate these parameters for DCT algorithms. The comparison results based on the parameters show that the algorithm proposed by Cho and Lee (1991) might be the best choice for a PPDSP unless it requires large overhead for communication between remote processors. In this case, the conventional row-column method with a fast 1D-DCT algorithm might be the most efficient.
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