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IEEE Open Journal of Nanotechnology 2023年 4卷 150-155页

作者： Chen, Yi-Ho Ohori, Daisuke Aslam, Muhammad Lee, Yao-Jen Li, Yiming Samukawa, Seiji National Yang Ming Chiao Tung University Parallel and Scientific Computing Laboratory Graduate Degree Program of College of Electrical and Computer Engineering Hsinchu300093 Taiwan Tohoku University Institute of Fluid Science Sendai980-8577 Japan National Yang Ming Chiao Tung University Parallel and Scientific Computing Laboratory Electrical Engineering and Computer Science International Graduate Program Hsinchu300093 Taiwan National Yang Ming Chiao Tung University Institute of Pioneer Semiconductor Innovation Hsinchu300093 Taiwan National Yang Ming Chiao Tung University Parallel and Scientific Computing Laboratory Institute of Communications Engineering Institute of Biomedical Engineering Hsinchu300093 Taiwan National Yang Ming Chiao Tung University Department of Electronics and Electrical Engineering Hsinchu300093 Taiwan National Yang Ming Chiao Tung University Institute of Communications Engineering Hsinchu300093 Taiwan

This study investigated the electrical properties of AlGaN/GaN high-electron-mobility transistors (HEMTs) with varied recess depths under the gate electrode. We demonstrated a recess depth of approximately 6 nm, which was achieved through neutral beam etching (NBE) technique with a low etch rate of 1.8 nm/min, resulting in device enhancement-mode (E-mode) behavior with threshold voltage (Vth) of 0.49 V. The effects of post-metallization annealing (PMA) on the device performance were also examined. The results revealed that PMA treatment improves the DC characteristics of the devices, including maximum drain current (IDMAX), transconductance (gm), subthreshold swing (SS), on-off ratio, and off-state leakage current, with maximum enhancement percentage of 18.3% for IDMAX, 3758% for on-off ratio, and 54.3% for SS. Moreover, this study compared the recess depths of metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs) with the SiN dielectric layer. The results showed that MIS-HEMTs exhibit more negative Vth values, which can be attributed to the controlled surface states achieved through passivation. © 2020 IEEE.

关键词： Etching

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Prediction of colorectal cancer based on taxonomic levels of microorganisms and discovery of taxonomic biomarkers using the Grouping-Scoring-Modeling (G-S-M) approach

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computers in Biology and Medicine 2025年 187卷 109813-109813页

作者： Bakir-Gungor, Burcu Temiz, Mustafa Canakcimaksutoglu, Beyza Yousef, Malik Department of Computer Engineering Faculty of Engineering Abdullah Gul University Kayseri38080 Turkey Department of Electrical and Computer Engineering Faculty of Engineering Abdullah Gul University Kayseri38080 Turkey Department of Bioengineering Faculty of Life and Natural Science Abdullah Gul University Kayseri38080 Turkey Department of Information Systems Zefat Academic College Zefat13206 Israel Zefat Academic College Israel

Colorectal cancer (CRC) is one of the most prevalent forms of cancer globally. The human gut microbiome plays an important role in the development of CRC and serves as a biomarker for early detection and treatment. This research effort focuses on the identification of potential taxonomic biomarkers of CRC using a grouping-based feature selection method. Additionally, this study investigates the effect of incorporating biological domain knowledge into the feature selection process while identifying CRC-associated microorganisms. Conventional feature selection techniques often fail to leverage existing biological knowledge during metagenomic data analysis. To address this gap, we propose taxonomy-based Grouping Scoring Modeling (G-S-M) method that integrates biological domain knowledge into feature grouping and selection. In this study, using metagenomic data related to CRC, classification is performed at three taxonomic levels (genus, family and order). The MetaPhlAn tool is employed to determine the relative abundance values of species in each sample. Comparative performance analyses involve six feature selection methods and four classification algorithms. When experimented on two CRC associated metagenomics datasets, the highest performance metric, yielding an AUC of 0.90, is observed at the genus taxonomic level. At this level, 7 out of top 10 groups (Parvimonas, Peptostreptococcus, Fusobacterium, Gemella, Streptococcus, Porphyromonas and Solobacterium) were commonly identified for both datasets. Moreover, the identified microorganisms at genus, family, and order levels are thoroughly discussed via refering to CRC-related metagenomic literature. This study not only contributes to our understanding of CRC development, but also highlights the applicability of taxonomy-based G-S-M method in tackling various diseases. © 2025 Elsevier Ltd

关键词： Colorectal cancer Human gut microbiome Machine learning Taxonomic biomarkers MicroBiomeGSM

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Percolation Nature of Threshold Switching: an Experimental Verification

Percolation Nature of Threshold Switching: an Experimental V...

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IEEE Conference on Nanotechnology

作者： Suman Devkota Brendan M Kuzior Victor G. Karpov Daniel G. Georgiev Frank Li Vamsi Borra Electrical and Computer Engineering program Youngstown State University Youngstown OH OH USA Department of Physics and Astronomy and Department of Electrical Engineering and Computer Science respectively University of Toledo Toledo OH USA

This paper details a process used to create an interconnect in a conducting systems, such as amorphous or polycrystalline semiconductors. An experimental verification on the plasticity that supports the percolation conduction mechanism is provided. The plasticity observed in the sample could be harnessed in the development of new electronic devices that require flexibility and adaptability, such as wearable electronics and bendable screens. Overall, TEM characterization, in combination with SAED analysis, revealed a highly oriented crystalline structure in the sample. In addition, the results of this study have implications for the design of new memory devices that are based on a percolation conduction mechanism, which could potentially lead to the development of more efficient and reliable non-volatile storage technologies.

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electrical Characteristic and Power Fluctuations of GAA Si NS CFETs by Simultaneously Considering Six Process Variation Factors

IEEE Open Journal of Nanotechnology

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IEEE Open Journal of Nanotechnology 2023年 4卷 229-238页

作者： Kola, Sekhar Reddy Li, Yiming National Yang Ming Chiao Tung University Parallel and Scientific Computing Laboratory Electrical Engineering and Computer Science International Graduate Program Hsinchu300093 Taiwan Parallel and Scientific Computing Laboratory National Yang Ming Chiao Tung University Hsinchu300093 Taiwan National Yang Ming Chiao Tung University Institute of Communications Engineering Hsinchu300093 Taiwan National Yang Ming Chiao Tung University Institute of Biomedical Engineering Hsinchu300093 Taiwan National Yang Ming Chiao Tung University Department of Electronics and Electrical Engineering Hsinchu300093 Taiwan

Characteristic variability induced by process variation effect (PVE) is one of technological challenges in semiconductor industry. In this work, we computationally study electrical characteristic and power fluctuations induced by six factors of PVE of the gate-all-around (GAA) silicon (Si) nanosheet (NS) complementary field-effect-transistors (CFETs) which are formed by vertically stacking n-FET on top of p-FET. Among the six factors, NS thickness (TNS), NS width (WNS), and gate length (LG) are identified as crucial factors contributing to large variations in device characteristics. The p-FET exhibits substantial off-state current fluctuation (about 151%) due to the bottom parasitic channel leakages. Compared with the magnitudes of dynamic and short circuit powers, the static power is marginal, but it possesses the largest fluctuation (up to 148%). If we assume that each factor of PVE has the same probability distribution as the others and all are mutually independent, the statistical sum of their power fluctuations will exhibit more than 50% overestimations, compared with the results when all factors are considered simultaneously. © 2020 IEEE.

关键词： III-V semiconductors

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Imaging atomic-scale chemistry from fused multi-modal electron microscopy

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npj Computational Materials 2022年第1期8卷 164-171页

作者： Jonathan Schwartz Zichao Wendy Di Yi Jiang Alyssa J.Fielitz Don-Hyung Ha Sanjaya D.Perera Ismail El Baggari Richard D.Robinson Jeffrey A.Fessler Colin Ophus Steve Rozeveld Robert Hovden Department of Materials Science and Engineering University of MichiganAnn ArborMIUSA Mathematics and Computer Science Division Argonne National LaboratoryLemontILUSA Advanced Photon Source Facility Argonne National LaboratoryLemontILUSA Dow Chemical Co. MidlandMIUSA Department of Material Science and Engineering Cornell UniversityIthacaNew YorkUSA School of Integrative Engineering Chung-Ang UniversitySeoulRepublic of Korea Department of Physics Cornell UniversityIthacaNYUSA The Rowland Institute at Harvard CambridgeMAUSA Department of Electrical Engineering and Computer Science University of MichiganAnn ArborMIUSA National Center for Electron Microscopy Lawrence Berkeley National LaboratoryMolecular FoundryBerkeleyCAUSA Applied Physics Program University of MIchiganAnn ArborMIUnited States

Efforts to map atomic-scale chemistry at low doses with minimal noise using electron microscopes are fundamentally limited by inelastic ***,fused multi-modal electron microscopy offers high signal-to-noise ratio(SNR)recovery of material chemistry at nano-and atomic-resolution by coupling correlated information encoded within both elastic scattering(high-angle annular dark-field(HAADF))and inelastic spectroscopic signals(electron energy loss(EELS)or energy-dispersive x-ray(EDX)).By linking these simultaneously acquired signals,or modalities,the chemical distribution within nanomaterials can be imaged at significantly lower doses with existing detector *** many cases,the dose requirements can be reduced by over one order of *** high SNR recovery of chemistry is tested against simulated and experimental atomic resolution data of heterogeneous nanomaterials.

关键词： materials chemistry fused

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FDAM: Filter-Dedicated Approximate Multiplier Design for Real-Time CNN Acceleration

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IEEE Transactions on computer-Aided Design of Integrated Circuits and Systems 2025年

作者： Nguyen, Kihwan Kim Xuan Truong Jeon, Dongsuk Lee, Hyuk-Jae Korea Republic of program Department of Electrical Engineering Seoul08826 Korea Republic of Inter-University Semiconductor Research Center Seoul National University Graduate School of Convergence Science and Technology Research Institute for Convergence Science Seoul08826 Korea Republic of Department of Electrical and Computer Engineering Seoul08826 Korea Republic of

Video super-resolution (VSR) is widely used in various high-definition applications, such as HDTVs and smartphones, requiring a dedicated upscaling technique for realtime full-HD generation. To reduce on-chip buffers for largesize output feature maps, a streaming VSR accelerator may employ an output stationary dataflow, leading to a large energy consumption caused by frequent filter switching. To mitigate this, we introduce a new filter-dedicated multiplier design for realtime VSR acceleration. We replace costly multipliers with adders, shifters, and multiplexers (MUXes), referred to as unified multiple constant multiplications (UMCM). The conventional UMCM, however, may incur considerable area/power overhead due to the unified topology constraint among different filter sets. To address this problem, we propose a new approximated MCM (AMCM) problem to relax the constraint and an approximate compatible graph synthesis (A-CGS) framework to efficiently solve AMCM by jointly searching for approximated filters and constructing a unified graph. Additionally, we suggest a lightweight finetuning method by freezing approximated filters and only finetuning biases, which can recover the original model’s accuracy within a few epochs. Experimental results with synthetic data demonstrate that AMCM reduces the area by up to 49.8%, 44.8%, and 40.3% when considering constant sets of 2, 4, and 8, respectively. Our designs with SR application achieve up to a 73.3% reduction in energy consumption. Experiments with the Set5 and Set14 datasets show that our model with bias correction achieves similar restoration performance compared to the eightbit models. © 1982-2012 IEEE.

关键词： Acceleration

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Improving electrically Evoked Compound Action Potential Based on electrical Field Imaging and Electrode Interfaces

Improving Electrically Evoked Compound Action Potential Base...

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IEEE Conference on Electromagnetic Field Computation

作者： Charles T.M. Choi Chun Ting Ke Jelani Lawrence Alexander C. C. Wang Department of Electronics and Electrical Engineering College of Electrical & Computer Engineering National Yang Ming Chiao Tung University Hsinchu Taiwan Institute of Electrical and Control Engineering College of Electrical & Computer Engineering National Yang Ming Chiao Tung University Hsinchu Taiwan Institute of Biomedical Engineering College of Electrical & Computer Engineering National Yang Ming Chiao Tung University Hsinchu Taiwan Electrical Engineering & Computer Science International Graduate Program College of Electrical & Computer Engineering National Yang Ming Chiao Tung University Hsinchu Taiwan

ISBN: (数字)9798350348958

ISBN: (纸本)9798350348965

The electrically evoked compound action potential (ECAP) has been used in various clinical studies and has become a key physiological signal for cochlear implants (CI). This study used four sensing electrodes to record ECAP signals based on the alternating polarity approach. An electrical field imaging (EFI) result based on the finite element method was used to obtain the interface impedance, then ECAP simulation results were computed and compared with a patient's clinical ECAP measurements. Preliminary modeling results show that the interface impedance obtained by this EFI-based technique can improve the simulation accuracy of the ECAP model. The ECAP modeling result will be compared with clinical ECAP measurements to validate the model in the full paper.

关键词： Electrodes Action potentials Impedance measurement Computational modeling Simulation Imaging Finite element analysis

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GrInAdapt: Scaling Retinal Vessel Structural Map Segmentation Through Grounding, Integrating and Adapting Multi-device, Multi-site, and Multi-modal Fundus Domains

arXiv

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arXiv 2025年

作者： Liu, Zixuan Honjaya, Aaron Xu, Yuekai Zhang, Yi Pan, Hefu Wang, Xin Shapiro, Linda G. Wang, Sheng Wang, Ruikang K. Paul G. Allen School of Computer Science and Engineering University of Wasghington SeattleWA98195 United States Department of Bioengineering University of Washington United States Department of Electrical and Computer Engineering University of Washington United States Department of Ophthalmology University of Washington United States

Retinal vessel segmentation is critical for diagnosing ocular conditions, yet current deep learning methods are limited by modality-specific challenges and significant distribution shifts across imaging devices, resolutions, and anatomical regions. In this paper, we propose GrInAdapt, a novel framework for source-free multi-target domain adaptation that leverages multi-view images to refine segmentation labels and enhance model generalizability for optical coherence tomography angiography (OCTA) of the fundus of the eye. GrInAdapt follows an intuitive three-step approach: (i) grounding images to a common anchor space via registration, (ii) integrating predictions from multiple views to achieve improved label consensus, and (iii) adapting the source model to diverse target domains. Furthermore, GrInAdapt is flexible enough to incorporate auxiliary modalities—such as color fundus photography—to provide complementary cues for robust vessel segmentation. Extensive experiments on a multi-device, multi-site, and multi-modal retinal dataset demonstrate that GrInAdapt significantly outperforms existing domain adaptation methods, achieving higher segmentation accuracy and robustness across multiple domains. These results highlight the potential of GrInAdapt to advance automated retinal vessel analysis and support robust clinical decision-making. © 2025, CC BY-SA.

关键词： Optical coherence tomography

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engineering dimensionality of collective dipole-dipole interactions using a nanophotonic environment

Engineering dimensionality of collective dipole-dipole inter...

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2023 Conference on Lasers and Electro-Optics, CLEO 2023

作者： Boddeti, Ashwin K. Wang, Yi Juarez, Xitlali Boltasseva, Alexandra Alaeian, Hadiseh Odom, Teri W. Jacob, Zubin Elmore Family School of Electrical and Computer Engineering Birck Nanotechnology Center Purdue University West LafayetteIN47907 United States Graduate Program in Applied Physics Northwestern University EvanstonIL60208 United States Department of Materials Science and Engineering Northwestern University EvanstonIL60208 United States Department of Chemistry Department of Materials Science and Engineering Northwestern University EvanstonIL60208 United States

ISBN: (纸本)9781957171258

We experimentally demonstrate reduced dimensionality in a interacting ensemble of emitters. The well-known stretched exponential decay dynamics, (Equation presented) with β = 0.5 in 3D geometries, is strikingly modified in a nanophotonic environment that supports long-range interaction to β ~ 0.3. © Optica Publishing Group 2023.

关键词： Nanophotonics

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Modeling Atomistically Assembled Diffractive Optics in Solids

arXiv

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arXiv 2024年

作者： Kling, Trevor Na, Dong-Yeop Hosseini, Mahdi Department of Electrical and Computer Engineering Applied Physics Program Northwestern University EvanstonIL60208 United States Department of Electrical Engineering Pohang University of Science and Technology Pohang37673 Korea Republic of Elmore Family School of Electrical and Computer Engineering Purdue University West LafayetteIN47907 United States

We develop a model describing long-range atom-atom interactions in a two-dimensional periodic or a-periodic lattice of optical centers inside a solid-state host material. We consider realistic environmental and technical conditions such as frequency and position broadening. Even when considering a significant frequency broadening in the ensemble (∼300 GHz), we observe up to a three-fold increase in directional scattering from the resonant lattice in a system. The model can be used to scalably design quantum optical elements, e.g. a quantum lens, harnessing atomistic engineering (e.g. via ion implantation) of collective interactions in materials to enhance quantum properties. © 2024, CC BY.

关键词： Nanocrystals

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