作者：
Li, K.Tassoudji, M.A.Shin, R.T.Kong, J.A.Department of Electrical Engineering and Computer Science and Research Laboratory of Electronics
Massachusetts Institute of Technology Cambridge Massachusetts 02139 Kevin Li:received his BS and SM degrees (1990) in Electrical Engineering and EE (Electrical Engineer's) degree (1991) from the Massachusetts Institute of Technology
where he is currently pursuing his PhD in Electrical Engineering. Since 1990 he has been the recipient of a United States Air Force Laboratory Graduate Fellowship. His main research interests include electromagnetic scattering radar cross section prediction and numerical techniques. Mr. Li is a member of Tau Beta Pi and a student member of IEEE. M. Ali Tassoudji:received his BS (1987) and MS (1989) degrees in Electrical Engineering from the University of Michigan
Ann Arbor. Since 1989 he has been a research assistant at the Massachusetts Institute of Technology where he is currently working towards his PhD in Electrical Engineering. His research interests include electromagnetic scattering and propagation modeling of microwave circuits and numerical techniques. Mr. Tassoudji is a member of IEEE and Eta Kappa Nu. Robert T. Shin:received his SB (1977)
SM (1980) and PhD (1984) in Electrical Engineering from the Massachusetts Institute of Technology. Since 1984 he has been a member of the Air Defense Techniques Group at MIT Lincoln Laboratory as a Research Staff member and as a Senior Staff member from 1989. His research interests are in the areas of electromagnetic wave scattering and propagation theoretical model development and data interpretation for microwave remote sensing. He is the coauthor ofTheory of Microwave Remote Sensing(Wiley 1985). Dr. Shin is a member of The Electromagnetics Academy IEEE American Geophysical Union Tau Beta Pi Eta Kappa Nu and Commission F of the International Union of Radio Science. Since 1987 he has served on the Editorial Board of theJournal of Electromagnetic Waves and Applications(JEWA). Jin Au Kong:is Professor of Electrical Enginee
The finite difference-time domain (FD-TD) technique is applied to the solution of Maxwell's equations. A computer program, which can be used to simulate and study numerous electromagnetic phenomena, is developed a...
The finite difference-time domain (FD-TD) technique is applied to the solution of Maxwell's equations. A computer program, which can be used to simulate and study numerous electromagnetic phenomena, is developed and implemented on an IBM 386 compatible personal computer. The FD-TD technique is a useful tool for students in electromagnetics. The technique is flexible and can be applied to many basic EM scattering and radiation problems. Because field solutions are found as a function of time, visualization of the propagation of the EM fields is possible. The FD-TD technique is implemented for a two-dimensional rectangular grid in conjunction with a second-order absorbing boundary condition. Both E- and H-field polarizations are analyzed. Finite objects consisting of dielectric, magnetic and conducting materials, and perfectly conducting infinite ground planes are modeled. Plane wave and line current sources are implemented. In addition to the capability of animating the propagation of the EM fields, radiation and scattering patterns can be generated.
An algorithm is presented to accomplish the global routing for general cell routing problems. More specifically, the branch-and-bound method is used to find the minimal cost path that is feasible between two pins on t...
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An algorithm is presented to accomplish the global routing for general cell routing problems. More specifically, the branch-and-bound method is used to find the minimal cost path that is feasible between two pins on the routing surface. An extension of this algorithm is used to form multipoint nets. The algorithm is described and illustrated.
The recombination lifetime τ r has been measured at low temperature in Si p‐channel metal oxide semiconductor field effect transistors (MOSFET’s) using the charge pumping technique. Measurements were performed ove...
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The recombination lifetime τ r has been measured at low temperature in Si p‐channel metal oxide semiconductor field effect transistors (MOSFET’s) using the charge pumping technique. Measurements were performed over the 40–300‐K range. A monotonically increasing lifetime with decreasing temperature was measured. τ r was found to be proportional to exp(A r /k T), where A r is a constant determined from the slope of ln τ vs 1/T. For a typical MOSFET the lifetime ranged from 80 ns at 300?K to 370 μs at 100?K. The value of A r in this case was determined to be 106 meV.
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