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Application of Deep Artificial Neural Network to Model Characteristic Fluctuation of Multi-Channel Gate-All-Around Silicon Nanosheet and Nanofin MOSFETs Induced by Random Nanosized Metal Grains

Application of Deep Artificial Neural Network to Model Chara...

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IEEE Electron Devices Technology and Manufacturing Conference (EDTM)

作者： Sagarika Dash Yiming Li Wen-Li Sung Parallel and Scientific Computing Laboratory National Yang-Ming Chiao Tung University Hsinchu Taiwan Electrical Engineering and Computer Science International Graduate Program National Yang-Ming Chiao Tung University Hsinchu Taiwan Institute of Communications Engineering National Yang-Ming Chiao Tung University Hsinchu Taiwan Department of Electronics and Electrical Engineering National Yang-Ming Chiao Tung University Hsinchu Taiwan Institute of Biomedical Engineering National Yang-Ming Chiao Tung University Hsinchu Taiwan Center for mm Wave Smart Radar System and Technologies National Yang-Ming Chiao Tung University Hsinchu Taiwan

In this work, we propose a deep artificial neural network (D-ANN) to estimate the work function fluctuation (WKF) on 4-channel stacked gate-all-around (GAA) silicon (Si) nanosheet (NS) and nanofin (NF) MOSFET devices for the first time. The 2-layered simple deep model can well predict the transfer characteristics for both NS/NF FET with a large number of (128) input features, utilizing considerably lesser (1100 samples) data uniformly. The resultant model is evaluated by the $\mathrm{R}^{2}$ score and RMSE to witness its competency and the average error is $< 4\%$ . We do also discuss the circuit simulation possibility by applying the ANN approach.

关键词： Semiconductor device modeling MOSFET Gallium arsenide Artificial neural networks Predictive models Logic gates Silicon

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Concealed drug detection via fan beam coded-aperture X-ray diffraction imaging 6

Concealed drug detection via fan beam coded-aperture X-ray d...

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Anomaly Detection and Imaging with X-Rays (ADIX) VI 2021

作者： Greenberg, Joel A. Stryker, Stefan Carpenter, Josh Kapadia, Anuj J. Department of Electrical and Computer Engineering Duke University DurhamNC27708 United States Medical Physics Graduate Program Duke University DurhamNC27708 United States Carl E. Ravin Advanced Imaging Laboratories Dept. of Radiology Duke University DurhamNC27708 United States Quadridox Inc. HillsboroughNC27278 United States

ISBN: (数字)9781510643147

ISBN: (纸本)9781510643130

Detecting illegal drugs in packages without opening the package is a challenge. X-ray diffraction tomography offers the potential capability of uniquely identifying illegal drugs within a package based on their atomic structure. To understand the potential for XRD-based drug detection, we developed a method for building a library of X-ray diffraction drug signatures. In addition, we used a compact, multi-modality fan beam X-ray imaging system (combining transmission and X-ray diffraction) to distinguish oxycodone from non-prescription medicine when concealed within different types of containment. © 2021 SPIE.

关键词： X ray diffraction

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Landau Polaritons in a Full-Dielectric Three-Dimensional Photonic-Crystal Cavity

Landau Polaritons in a Full-Dielectric Three-Dimensional Pho...

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CLEO: Science and Innovations, S and I 2022

作者： Tay, Fuyang Mojibpour, Ali Liang, Shuang Baydin, Andrey Ahmadivand, Arash Peraca, Nicolas Marquez Xu, Hongjing Gardner, Geoff C. Manfra, Michael J. Hagenmüller, David Kono, Junichiro Department of Electrical and Computer Engineering Rice University HoustonTX77005 United States Applied Physics Graduate Program Smalley-Curl Institute Rice University HoustonTX77005 United States Department of Physics and Astronomy Purdue University West LafayetteIN47907 United States Birck Nanotechnology Center Purdue University West LafayetteIN47907 United States Smalley-Curl Institute Rice University HoustonTX77005 United States Department of Physics and Astronomy Rice University HoustonTX77005 United States Microsoft Quantum Purdue Purdue University West LafayetteIN47907 United States School of Electrical and Computer Engineering Purdue University West LafayetteIN47907 United States School of Materials Engineering Purdue University West LafayetteIN47907 United States Université de Strasbourg CNRS Strasbourg67000 France Department of Materials Science and NanoEngineering Rice University HoustonTX77005 United States

ISBN: (纸本)9781557528209

We fabricated a full-dielectric three-dimensional photonic-crystal cavity containing an ultrahigh-mobility two-dimensional electron gas. By applying a strong perpendicular magnetic field, we created Landau polaritons originating from the ultrastrong coupling of electrons with cavity modes. © Optica Publishing Group 2022, © 2022 The Author(s)

关键词： Polariton

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Histogram specification by assignment of optimal unique values

arXiv

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arXiv 2021年

作者： Ramos, Vítor S. de Q. Silveira, Luiz Felipe de Q. Silveira Júnior, Luiz Gonzaga Electrical and Computer Engineering Graduate Program Federal University of Rio Grande do Norte Natal Brazil Computer Engineering and Automation Department Federal University of Rio Grande do Norte Natal Brazil Communications Engineering Department Federal University of Rio Grande do Norte Natal Brazil

In this paper, we propose two novel algorithms for histogram specification and quantile transformation of data without local information. These are core techniques that can serve as building blocks for applications that require specifying the sample distribution of a given set of data. Histogram specification is best known for its image enhancement applications, whereas quantile transformation is typically employed in data preprocessing for data normalization. In signal processing, methods often require temporal or spatial information;in data preprocessing, methods work by interpolation or by approximation, drawing from results in computational statistics, and have a trade-off between speed and quality. It is nontrivial to accommodate for cases that do not have local information (e.g., tabular data) while also providing a fast, exact solution. For that, we take up a concept in image processing called group mapping law and propose an extension. The proposed extension allows us to formulate a convex functional where we look for the best approximation between the output unique values and the reference histogram. Then, we apply the ordered assignment solution, a result in optimal transport, to reconstruct the output from the optimal unique values. Two sets of results show the effectiveness of the proposed algorithms when compared to traditional and state-of-the-art methods. The proposed algorithms are fast, exact, and least p-norm optimal. Further, we define the algorithms as generic data processing methods. Thus, contributions from this paper can be easily incorporated in applications spanning many disciplines, especially in applied data science. Copyright © 2021, The Authors. All rights reserved.

关键词： Graphic methods

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Scaling Limitations of Line TFETs at Sub-8-nm Technology Node

Scaling Limitations of Line TFETs at Sub-8-nm Technology Nod...

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2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020

作者： Thoti, Narasimhulu Li, Yiming Kola, Sekhar Reddy Parallel and Scientific Computing Laboratory Eecs International Graduate Program Institute of Communications Engineering Department of Electrical and Computer Engineering Center for MmWave Smart Radar System and Technologies National Chiao Tung University 1001 Ta-Hsueh Rd Hsinchu300 Taiwan

ISBN: (纸本)9781728142326

The scope of the work is to investigate limitations in device scaling by identifying various parameters of short channel effects (SCEs) in current challenging geometries of the line tunnel field effect transistors (TFETs). Key factors of the considered device, such as the doping and the thickness (tn) of n-epitaxial region, and source-to-drain length (LSDeff) scaling cannot be tuned anymore to boost the device characteristics for the sub-8-nm technology node. The main results of this study indicates that the engineering acceptable performance are achieved at a low doping of 5 1018 cm-3, an optimal tn as low (about 0.5 nm), and a LSDeff greater than 12.5 nm. Hence, the line TFETs below sub-8-nm faces serious bottleneck of scaling and cannot be further scaled with the conventional scaling rule at all. © 2020 IEEE.

关键词： Tunnel field effect transistors

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Analysis of Negative Capacitance MOSFETs Characteristic with Spacer

Analysis of Negative Capacitance MOSFETs Characteristic with...

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2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020

作者： Lee, Yu-Chun Kola, Sekhar Reddy Chen, Chieh-Yang Chuang, Min-Hui Li, Yiming Parallel and Scientific Computing Laboratory Institute of Biomedical Engineering Institute of Communications Engineering Eecs International Graduate Program Department of Electrical and Computer Engineering Center for MmWave Smart Radar System and Technologies National Chiao Tung University 1001 Ta-Hsueh Rd Hsinchu300 Taiwan

ISBN: (纸本)9781728142326

In this work, our study comprises of design and investigation on negative capacitance (NC), metal-oxide-semiconductor (MOS) field effects transistors (MOSFETs) with spacer and source/drain (S/D) overlap engineering. The scope of the work is to boost the performance and high-energy efficiency of the studied NC-MOSFETs by using the ferro electric material (FE). The NC-MOSFETs with the spacer technology can achieve the admirable Ion/Ioff ratio and subthreshold swing (SS), compared with planar MOSFETs. It makes device scaling possible by eliminating the short channel effect (SCE). We further estimated the effect of FE thickness and spacer, which are another critical parameter of obtaining better electrical characteristics and reducing SS. © 2020 IEEE.

关键词： Capacitance

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Ultrastrong Spin-Photon Coupling in Gadolinium Gallium Garnet

Ultrastrong Spin-Photon Coupling in Gadolinium Gallium Garne...

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2023 Conference on Lasers and Electro-Optics, CLEO 2023

作者： Kritzell, T. Elijah Bao, Junzhe Doumani, Jacques Lee, Jae Joon Xu, Hongjing Tay, Fuyang Nojiri, Hiroyuki Bamba, Motoaki Baydin, Andrey Kono, Junichiro Department of Electrical and Computer Engineering Rice University HoustonTX77005 United States Applied Physics Graduate Program Smalley-Curl Institute Rice University HoustonTX77005 United States Department of Physics and Astronomy Rice University HoustonTX77005 United States Institute for Materials Research Tohoku University Sendai980-8577 Japan The Hakubi Center for Advanced Research Kyoto University Kyoto606-8502 Japan Department of Physics I Kyoto University Kyoto606-8502 Japan Smalley-Curl Institute Rice University HoustonTX77005 United States Department of Material Science and NanoEngineering Rice University HoustonTX77005 United States

We examine ultrastrong coupling of an ensemble of paramagnetic spins in Gd3Ga5O12 with terahertz photons in the presence of a high external magnetic field both in the bulk and thin-film limits. © 2023 The Author(s)

ISBN: (纸本)9781957171258

关键词： Photons

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Reduction of interface defects in gate-recessed GaN HEMTs by neutral beam etching

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Materials Today Advances 2024年 23卷

作者： Yu, Chia Hao Chiang, Wei Hsiang Chen, Yi-Ho Samukawa, Seiji Wuu, Dong Sing Chung, Chin-Han Hsiao, Ching-Lien Horng, Ray Hua Institute of Electronics National Yang Ming Chiao Tung University Department of Materials Science and Engineering National Chung Hsing University Graduate Degree Program of College of Electrical and Computer Engineering National Yang Ming Chiao Tung University Institute of Comunications Engineering National Yang Ming Chiao Tung University Department of Applied Materials and Optoelectronic Engineering National Chi Nan University International College of Semiconductor Technology National Yang Ming Chiao Tung University Thin Film Physics Division Department of Physics Chemistry and Biology (IFM) Linköping University

This study investigates and compares the impact of different etching techniques on the fabrication of GaN high electron mobility transistors (HEMTs) between the inductively coupled plasma reactive ion etching (ICP-RIE) and the neutral beam etching (NBE) for the gate recess. By conducting direct current analysis, it was found that devices manufactured using the NBE exhibited superior electrical performance as compared with those produced using the ICP-RIE. These enhanced electrical characteristics include a transconductance of up to 100.4 mS/mm, a threshold voltage (V_th) of −2.3 V, an on/off current ratio of 1.1 × 10⁹, a subthreshold swing (S.S.) of 99.63 mV/dec, and a remarkably low gate leakage current. Additionally, we noted varying degrees of hysteresis in the I–V characteristics were related to process disparities possibly leading to interface defects. Multi-frequency capacitance-voltage (C–V) measurements were used to identify the interface defects at the oxide/AlGaN interface of the gate. The results revealed that devices fabricated using the NBE exhibited a lower interface defect density as compared with those fabricated using the ICP-RIE, thereby elucidating the reduced hysteresis observed in the I–V characteristics. These findings indicated the significant advantages of the NBE process in the fabrication of GaN HEMTs. © 2024 The Authors

关键词： GaN HEMTs Gate recess Interface defects Multi-frequency C–V Neutral beam etching

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Dementia Detection by Shopping Refugees Support Robot

Dementia Detection by Shopping Refugees Support Robot

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IEEE Global Conference on Life Sciences and Technologies (LifeTech)

作者： Yuta Kishimoto Kenichi Arai Tetsuo Imai Toru Kobayashi Computer and Information Science Program Graduate School of Engineering Nagasaki University Nagasaki Japan Division of Electrical Engineering and Computer Science Graduate School of Engineering Nagasaki University Nagasaki Japan

ISBN: (数字)9781728170633

ISBN: (纸本)9781728170640

We have developed the Shopping Refugees Support Robot that enables the elderly to order items through Social Networking Service (SNS) by voice conversation without relying on smartphones. This paper proposes a detection method of dementia signs using this Robot. Concretely, deterioration of cognitive function is detected by the evaluation of short-term memory utilizing order history of the Robot. We expect detection of dementia signs on a daily basis without making the elderly person conscious of having a dementia test, by information that only the person knows. We implemented a prototype and confirmed its functional validity.

关键词： Dementia SNS Comunication robot Internet of Things Artificial Intelligence Robot Sympathetic Nervous System Dementia Internet of things Artificial Intelligence Refugees inspection methods Shopping Home shopping aged person

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Broadband Coherent Wave Control Through Photonic Collisions at Time Interfaces

arXiv

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arXiv 2022年

作者： Galiffi, Emanuele Xu, Gengyu Yin, Shixiong Moussa, Hady Ra'di, Younes Alù, Andrea Photonics Initiative Advanced Science Research Center City University of New York 85 St. Nicholas Terrace New York10031 United States Department of Electrical Engineering City College City University of New York United States Physics Program Graduate Center City University of New York United States Department of Electrical Engineering and Computer Science Syracuse University SyracuseNY13244 United States

Coherent wave control exploits the interference among multiple waves impinging on a system to suppress or enhance outgoing signals based on their relative phase and amplitude. This process inherently requires the combination of non-Hermiticity, in order to enable energy exchanges among the waves, and spatial interfaces in order to tailor their scattering. Here we explore the temporal analogue of this phenomenon, based on time-interfaces that support instantaneous non-Hermitian scattering events for photons. Based on this mechanism, we demonstrate ultra-broadband temporal coherent wave control and the photonic analogue of mechanical collisions with phase-tunable elastic features. We apply them to erase, enhance and reshape arbitrary pulses by suitably tailoring the amplitude and phase of counterpropagating signals. Our findings provide a pathway to effectively sculpt broadband light with light without requiring spatial boundaries, within an ultrafast and low-energy platform. © 2022, CC BY.

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