检索结果-内蒙古大学图书馆

2022 International Conference on Informatics electrical and Electronics, ICIEE 2022

作者： Afandi, A.N. Wibawa, Aji Prasetya Rahmawati, Yuni Sunaryono Kobayashi, Makiko Smart Power and Advanced Energy Systems Center Center of Advanced Material for Renewable Energy Universitas Negeri Malang Electrical Engineering Department Malang Indonesia Universitas Negeri Malang Electrical Engineering Department Malang Indonesia Universitas Negeri Malang Department of Physics Malang Indonesia Computer Science and Electrical Engineering Kumamoto University Kumamoto Japan

ISBN: (纸本)9781665486224

The power system is made up of electricity generating facilities, transmission networks, and distribution networks. Utility companies are also final energy users in these systems. Transmission lines are used in the construction of the trans-mission system to link all networks and transport generated power to load requirements. Electricity loss on transmission lines during power supply is transformed into line heating. In this study, the Thunderstorm Algorithm (TA) is used to optimize transmission conductor heating caused by power losses. By taking into consideration dynamic power losses, conductors, measured external temperature, solar radiation, and wind speed, Transmission Conductor Heating (TCH) is used to determine the temperature of bare overhead lines. Technical parameters are used to apply TA to the TCH as well. The transmission conductor heating is approached using a thermal model for the end temperature, and the results demonstrate that power losses result in thermal performances. Additionally, due to the current dynamic losses, the temperature deviation changes with each operating hour. At the temperature threshold, which represents the ambient operating temperature, the optimization produces various outcomes. © 2022 IEEE.

关键词： Electric power transmission networks

来源：评论

学校读者我要写书评

暂无评论

Trade Study of Isolation Requirements and Magnetic Core Selection for Medium Frequency-Medium Voltage Transformers

Trade Study of Isolation Requirements and Magnetic Core Sele...

引用

Annual IEEE Conference on Applied Power Electronics Conference and Exposition (APEC)

作者： Mohendro Kumar Ghosh Mark A. Juds Brandon Grainger Ahmad El Shafei Bogdan S. Borowy Paul Ohodnicki Department of Mechanical Engineering and Material Science University of Pittsburgh Pittsburgh USA Department of Electrical and Computer Engineering University of Pittsburgh Pittsburgh USA Eaton Research Labs Eaton Corporation Menomonee Falls WI USA

ISBN: (数字)9798331516116

ISBN: (纸本)9798331516123

A significant emphasis exists on enabling a new generation of medium voltage and medium frequency solid state transformers using ferrite and nanocrystalline alloys for grid-tied applications including renewable integration and electric vehicle charging. Isolation requirements become a critical aspect of the transformer design in such cases, with a key design requirement being the winding-to-winding and core-to-winding spacing requirements. This paper investigates the critical impacts of isolation requirements on medium frequency transformer designs, comparing nanocrystalline and ferrite core materials in such applications. It is found that leakage flux loss becomes a critical factor as isolation distance increases. To illustrate this, a reluctance-based Magnetic Equivalent Circuit (MEC) of a single-phase shell-type transformer constructed with two EE cores is used to estimate leakage flux and associated leakage loss. Experimental results populated from a 10 kHz transformer prototype validate the model and design methodology. This paper also presents the design trade-offs between leakage flux core loss and isolation space, incorporating multi-objective optimization of 50 kW, 10 kHz transformer with ferrite and nanocrystalline cores, based on the NSGA-II algorithm under specific constrained conditions.

关键词： Ferrites Power system measurements Magnetic flux Voltage transformers Core loss Medium voltage Transformer cores Transformers Optimization Magnetic circuits

来源：评论

学校读者我要写书评

暂无评论

Non-Hermitian selective thermal emitter for thermophotovoltaics

Non-Hermitian selective thermal emitter for thermophotovolta...

引用

2023 Conference on Lasers and Electro-Optics, CLEO 2023

作者： Prasad, Ciril S. Raphaelson, Samuel C. Naik, Gururaj V. Department of Electrical and Computer Engineering Rice University HoustonTX77005 United States Applied Physics Graduate Program Smalley-Curl Institute Rice University HoustonTX77005 United States Department of Material Science and NanoEngineering Rice University HoustonTX United States

ISBN: (纸本)9781957171258

Selective thermal emitters can boost the efficiency of heat-to-electricity conversion in thermophotovoltaic systems only if their spectral selectivity is high. We demonstrate a non-Hermitian metasurface-based selective emitter operating at 1200 K in a GaSb-thermophotovoltaic cell. © Optica Publishing Group 2023 © 2023 The Author(s)

关键词： III-V semiconductors

来源：评论

学校读者我要写书评

暂无评论

First write pulse-induced interface damage in ferroelectric field-effect transistors

First write pulse-induced interface damage in ferroelectric ...

引用

IEEE International Workshop Integrated Reliability

作者： Priyankka Gundlapudi Ravikumar Chinsung Park Prasanna Venkatesan Ravindran Nashrah Afroze Mengkun Tian Winston Chern Suman Datta Shimeng Yu Souvik Mahapatra Asif Khan School of Electrical and Computer Engineering Georgia Institute of Technology GA USA Institute of Materials GA USA School of Material Science and Engineering Georgia Institute of Technology GA USA Department of Electrical Engineering Indian Institute of Technology Bombay Mumbai India

ISBN: (数字)9798331517168

ISBN: (纸本)9798331517175

We report the first direct experimental evidence that the first write pulse (cycle 1) generates more than half of the total traps generated until the complete collapse of the memory window at cycle $10^{4}-10^{5}$, in ferroelectric field effect transistors (FEFETs). This conclusion is reached by tracking the generated traps by a combination of subthreshold slope and charge pumping measurements in a Ferroelectric field-effect transistor and an equivalent standard MOSFET of same effective oxide thickness (EOT). We also find that with continued cycling, traps get generated more toward the bulk of the stack away from the Si/SiO 2 interface. We show that: (1) the first switch effect leads to nearly 50% of the total trap density $\left(\mathrm{N}_{i t}\right)$ near the Si/SiO 2 interface until memory window closure (2) with further bipolar cycling, damage happens both at and away from Si/SiO 2 interface.

关键词： Degradation Charge pumps MOSFET Current measurement Switches Logic gates Frequency measurement FeFETs Charge measurement Thickness measurement

来源：评论

学校读者我要写书评

暂无评论

The effect of boron incorporation on leakage and wake-up in ferroelectric Al1-xScxN

arXiv

引用

arXiv 2025年

作者： Gremmel, Maike Savant, Chandrashekhar Prakash Bhattacharya, Debaditya Schönweger, Georg Jena, Debdeep Fichtner, Simon Institute of Material Science Kiel University Germany Department of Materials Science and Engineering Cornell University United States School of Electrical and Computer Engineering Cornell University United States Germany Kavli Institute Cornell for Nanoscale Science Cornell University United States

This study explores the influence of boron incorporation on the structural and electrical properties of ferroelectric Aluminum Scandium Nitride (Al1-xScxN) thin films, focusing on leakage currents, wake-up effects, and imprint behavior. Al1-xScxN films were incorporated with varying boron concentrations and analyzed under different deposition conditions to determine their structural integrity and ferroelectric performance. Key findings include a reduction in leakage currents, non-trivial alterations in bandgap energy as well as an increasing coercive fields with increasing boron content. Films with 6-13 at.% boron exhibited N-polar growth, while those with 16 at.% boron showed mixed polarity after deposition, which affected their ferroelectric response during the initial switching cycles - as did the addition of boron itself compared to pure Al1-xScxN . With increasing boron content, wake-up became gradually more pronounced and was strongest for pure Al1-xBxN . © 2025, CC BY-NC-ND.

关键词： Ferroelectricity

来源：评论

学校读者我要写书评

暂无评论

A Perspective on Rhythmic Gymnastics Performance Analysis Powered by Intelligent Fabric

引用

Advanced Fiber materials 2023年第1期5卷 1-11页

作者： Dan Zhu Zhenyu Zhang Min Chen Pan Li Yuanzhuo Xiang Jingyu Ouyang Zhiheng Huang Xiaojuan Liu Fuhong Wang Maiping Yang Hongtao Zeng Ping Hong Lei Wei Chong Hou Guangming Tao School of Martial Arts and Performance Capital University of Physical Education and SportsBeijing 100191China Wuhan National Laboratory for Optoelectronics and School of Computer Science and TechnologyHuazhong University of Science and TechnologyWuhan 430074China State Key Laboratory of Material Processing and Die&Mould Technology School of Materials Science and EngineeringHuazhong University of Science and TechnologyWuhan 430074China School of Sports Medicine and Mealth Chengdu Sport UniversityChengdu 610000China School of Physical Education Chaohu UniversityHefei 238000China School of Physical Education Huazhong University of Science and TechnologyWuhan 430074China Beijing Sport University Beijing 100091China School of Electronic and Electrical Engineering and School of Materials Science and Engineering Nanyang University of TechnologySingapore 639798Singapore School of Optics and Electronic Information Huazhong University of Science and TechnologyWuhan 430074China

Performance analysis is an important tool for gymnasts and coaches to assess the techniques,strengths,and weaknesses of rhythmic gymnasts during *** have an accurate insight about the motion and postures can help the optimization of their performance and offer personalized ***,there are three primary limitations of traditional perfor-mance analysis systems applied in rhythmic gymnastics:(1)Inability to quantify anthropometric data in an imperceptible way,(2)labor-intensive nature of data labeling and analysis,and(3)lack of monitoring of all-round and multi-dimensional perspectives of the ***,an advanced performance analysis system for rhythmic gymnastics is proposed in this paper,powered by intelligent *** system uses intelligent fabric to detect the physiological and anthropometric data of the *** a variety of data are collected,the analysis component is implemented by artificial intelligence techniques resulting in behavior recognition,decision-making,and other functions assisting performance improvement.A feasible solution to implementing the analysis component is the use of the hyperdimensional computing *** addition,four typical applications are presented to improve training *** by intelligent fabric,the proposed advanced performance analysis system exhibits the potential to promote innovative technologies for improving training and competi-tive performance,prolonging athletic careers,as well as reducing sports injuries.

关键词： Rhythmic gymnastics Intelligent fabric Augmented reality Artificial intelligence

来源：评论

学校读者我要写书评

暂无评论

Plasma Jet Printing for Flexible Hybrid Electronics-A Review (Invited Paper) 5

Plasma Jet Printing for Flexible Hybrid Electronics-A Review...

引用

5th IEEE International Flexible Electronics Technology Conference, IFETC 2023

作者： Manzi, Jacob Estrada, David Subbaraman, Harish School of Electrical Engineering and Computer Science Oregon State University CorvallisOR97331 United States Micron School of Material Science and Engineering Boise State University BoiseID83725 United States Boise State University Center for Advanced Energy Studies BoiseID83725 United States Idaho National Laboratory Idaho FallsID83415 United States

ISBN: (纸本)9798350332094

Plasma jet printing has been utilized in the area of additive manufacturing for flexible hybrid electronics. The advantages of PJP-gravity-independent deposition, in situ material tailoring, ability to fabricate on low-Temperature substrates, and increased adhesion are discussed as they relate to the goals of the technology. © 2023 IEEE.

关键词： Temperature

来源：评论

学校读者我要写书评

暂无评论

Reliability Study of Vertical GaN PIN Rectifiers and The Origin of Premature Breakdown

Reliability Study of Vertical GaN PIN Rectifiers and The Ori...

引用

2022 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2022

作者： Cho, Minkyu Shao, Qinghui Laurence, Ted A. Daeumer, Matthias A. Yoo, Jae-Hyuck Noodeh, Marzieh Bakhtiary Xu, Zhiyu Detchprohm, Theeradetch Dupuis, Russell D. Shen, Shyh-Chiang College of Electrical and Computer Engineering Georgia Institute of Technology AtlantaGA United States Lawrence Livermore National Laboratory LivermoreCA United States College of Material Science and Engineering Georgia Institute of Technology AtlantaGA United States

1.2kV vertical homojunction vertical GaN PIN rectifiers were demonstrated. Nitrogen implantation was used for both electrical isolation and field termination. The fabricated devices showed BVs > 1.2 kV and the specific-on resistance 2. BVs of 208 devices were measured, and statistical analysis was performed to reveal the origin of the premature breakdown. To evaluate the long-term reliability of the devices, mean time to failure (MTTF) of estimated based on step-stress accelerated lifetime stress (SSALT) measurements. © 2022 MANTECH 2022. All rights reserved.

关键词： Gallium nitride

来源：评论

学校读者我要写书评

暂无评论

Folding State within a Hysteresis Loop: Hidden Multistability in Nonlinear Physical Systems

引用

Physical Review Letters 2024年第13期132卷 137201-137201页

作者： Meng-Xia Bi Huawei Fan Xiao-Hong Yan Ying-Cheng Lai School of Science Xi’an University of Posts and Telecommunications Xi’an 710121 China School of Material Science and Engineering Jiangsu University Zhenjiang 212013 China School of Electrical Computer and Energy Engineering Arizona State University Tempe Arizona 85287 USA Department of Physics Arizona State University Tempe Arizona 85287 USA

Identifying hidden states in nonlinear physical systems that evade direct experimental detection is important as disturbances and noises can place the system in a hidden state with detrimental consequences. We study a cavity magnonic system whose main physics is photon and magnon Kerr effects. Sweeping a bifurcation parameter in numerical experiments (as would be done in actual experiments) leads to a hysteresis loop with two distinct stable steady states, but analytic calculation gives a third folded steady state “hidden” in the loop, which gives rise to the phenomenon of hidden multistability. We propose an experimentally feasible control method to drive the system into the folded hidden state. We demonstrate, through a ternary cavity magnonic system and a gene regulatory network, that such hidden multistability is in fact quite common. Our findings shed light on hidden dynamical states in nonlinear physical systems which are not directly observable but can present challenges and opportunities in applications.

关键词： Bifurcations Complex systems Magnetization dynamics Magnons Coupled oscillators Direct numerical simulations Langevin equation

来源：评论

学校读者我要写书评

暂无评论

Low-Thermal-Budget Ferroelectric Field-Effect Transistors Based on CuInP2S6 and InZnO

arXiv

引用

arXiv 2023年

作者： Ryu, Hojoon Kang, Junzhe Park, Minseong Bae, Byungjoon Zhao, Zijing Rakheja, Shaloo Lee, Kyusang Zhu, Wenjuan Electrical and Computer Engineering University of Illinois at Urbana-Champaign UrbanaIL61801 United States Electrical and Computer Engineering University of Virginia VA22904 United States Material Science and Engineering University of Virginia VA22904 United States

In this paper, we demonstrate low-thermal-budget ferroelectric field-effect transistors (FeFETs) based on two-dimensional ferroelectric CuInP2S6 (CIPS) and oxide semiconductor InZnO (IZO). The CIPS/IZO FeFETs exhibit non-volatile memory windows of ~1 V, low off-state drain currents, and high carrier mobilities. The ferroelectric CIPS layer serves a dual purpose by providing electrostatic doping in IZO and acting as a passivation layer for the IZO channel. We also investigate the CIPS/IZO FeFETs as artificial synaptic devices for neural networks. The CIPS/IZO synapse demonstrates a sizeable dynamic ratio (125) and maintains stable multi-level states. Neural networks based on CIPS/IZO FeFETs achieve an accuracy rate of over 80% in recognizing MNIST handwritten digits. These ferroelectric transistors can be vertically stacked on silicon CMOS with a low thermal budget, offering broad applications in CMOS+X technologies and energy-efficient 3D neural networks. © 2023, CC BY.

关键词： Oxide semiconductors

来源：评论

学校读者我要写书评

暂无评论

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案：

请选择收藏分类：

通借通还

建议与咨询 留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案： 新增检索档案 确定 取消

请选择收藏分类： 新增自定义分类 确定 取消

通借通还

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

请选择保存的检索档案：

请选择收藏分类：