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35th Annual International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2021

作者： Cho, Minkyu Daeumer, Matthias A. Yoo, Jae-Hyuck Bakhtiary-Noodeh, Marzieh Shao, Qinghui Xu, Zhiyu Detchprohm, Theeradetch Dupuis, Russell D. Shen, Shyh-Chiang College of Electrical and Computer Engineering Georgia Institute of Technology AtlantaGA United States Lawrence Livermore National Laboratory LivermoreCA United States College of Material Science and Engineering Georgia Institute of Technology AtlantaGA United States

ISBN: (纸本)9781893580312

We report the development of vertical GaN PIN rectifier fabrication processing using an ion implantation isolation technique to create floating field guard ring (FGR) structures. With proper engineering in implantation profile and FGR geometries, fabricated devices demonstrated uniform blocking voltage (BV) for 1.2-kV-class devices across a 2-inch free-standing GaN substrate. A material analysis technique that can quickly detect bulk defects in the wafer scale was developed using a confocal photoluminescence under sub-bandgap photon excitation at λ = 400 nm. The wafer-mapping capability was used to investigate the correlation between bulk impurities and the BV performance. © 2021 CS MANTECH 2021 - 2021 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers. All Rights Reserved.

关键词： Photoluminescence

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Operation of Si Field Emitter Arrays in an N2 Environment

SSRN

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SSRN 2024年

作者： Asadi, Reza Farsad Zheng, Tao Rughoobur, Girish Akinwande, Akintunde I. Gnade, Bruce Southern Methodist University Department of Electrical and Computer Engineering 6251 Airline Road DallasTX75205 United States Coherent Corp. 6800 S U.S. 75 ShermanTX75092 United States Massachusetts Institute of Technology Department of Electrical Engineering and Computer Science 77 Massachusetts Ave CambridgeMA02139 United States University of Texas at Dallas Department of Material Science and Engineering RL10 800 West Campbell Road RichardsonTX75080 United States

Field Emitter Arrays (FEAs) have the potential to operate at high power, high frequencies, and endure harsh environments. However, vacuum packaging these devices poses a challenge due to the sensitivity of the emission phenomena to the surface properties of the cathode, such as the work function and the tip radius. Studying the effect of different residual gases on FEAs can enhance our understanding of the interaction between the emission surface and the environment and help estimate the permissible amount of residual gases within the package. In this study, the effect of N2 exposure on 500×500 Silicon Field Emitter Arrays (Si-FEAs) was investigated. The device was exposed to 10000 Langmuir (L) of N2 at 10-7 Torr. During the exposure, the anode current increased from 4.7 μA to 16 μA. However, this enhancement in current was temporary, and upon closing the leak valve, the anode current gradually returned to the pre-exposure level. No significant change in current was observed when the device was powered off during N2 exposure. The extent of current enhancement showed a direct relationship with the partial pressure of N2. These results suggest that the presence of N2 in a vacuum package does not degrade the performance of Si-FEAs. © 2024, The Authors. All rights reserved.

关键词： Anodes

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Machine learning assisted identification of homobilayer sliding ferroelectrics with large out-of-plane polarization and low sliding energy barriers

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Physical Review B 2025年第9期111卷 094106-094106页

作者： Xian Wang Yifan Li Ying Zhang Peng Wang Yi-Ming Zhao Jun Zhou Jie Yang Xuesen Wang Lei Shen Department of Physics National University of Singapore Singapore 117551 Singapore Department of Mechanical Engineering National University of Singapore Singapore 117575 Singapore Department of Electrical and Computer Engineering National University of Singapore Singapore 117576 Singapore National University of Singapore (Chongqing) Research Institute Chongqing 401123 China College of Electronic and Information Engineering Shandong University of Science and Technology Qingdao 266590 China Institute of Materials Research and Engineering (IMRE) Agency for Science Technology and Research (ASTAR6) Singapore 138634 Singapore Key Laboratory of Material Physics Ministry of Education School of Physics Zhengzhou University Zhengzhou 450001 China

Two-dimensional (2D) ferroelectric materials hold great promise for ultrahigh-density data storage and ultrafast memory applications in flexible or wearable electronic devices. Because of depolarizing field effects and high-energy barriers for switching, only a handful of 2D ferroelectrics have been reported experimentally, such as In2Se3 and CuInP2S6. Through high-throughput calculations we identified a catalog of 25 synthesizable sliding ferroelectrics with large out-of-plane polarization and low sliding energy barriers. The high-throughput process started with 6351 monolayer materials in 2dmatpedia, narrowed down to 79 monolayer semiconductors with honeycomb structures, leading to the construction of 474 homobilayers sliding ferroelectrics, and ultimately identifying 25 high-performance 2D sliding ferroelectrics. Using big-data analysis and machine learning, we also revealed strong correlations between polarization and key physical properties, especially a hidden factor of effective van der Waals radius, which has been overlooked in previous fewer-sample studies. Based on these mechanistic insights, we proposed machine learning descriptors for predicting sliding ferroelectric properties.

关键词： Van der Waals forces

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Reliability Assessment of Ultra-low-K dielectric material and Demonstration in Advanced Interposers

Reliability Assessment of Ultra-low-K dielectric Material an...

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Electronic Components and Technology Conference (ECTC)

作者： Pragna Bhaskar Christopher Blancher Mohan Kathaperumal Madhavan Swaminathan Mark D. Losego 3D Systems Packaging Research Center School of Material Science and Engineering Georgia Institute of Technology Atlanta USA 3D Systems Packaging Research Center School of Electrical and Computer Engineering Georgia Institute of Technology Atlanta USA 3D Systems Packaging Research Center School of Electrical and Computer Engineering School of Material Science and Engineering Georgia Institute of Technology Atlanta USA

Polymer dielectrics have been used as build-up layers in 2.5D interposers with multiple redistribution layers (RDL). To achieve high interconnection densities with good electrical performance, there is always a need to explore newer materials with lower dielectric constants (k) to enable improved data rate, reduced crosstalk, and signal integrity (low latency). With short wiring lengths, the capacitance of the interconnects plays a critical role in determining high bandwidth density and low energy per bit (EPB). Since the capacitance scale with dielectric constant, lowering the dielectric constant of the build-up films used in RDL layers in future interposers becomes very *** common polymer dielectric materials that are presently used in the redistribution layers have dielectric constants in the range of 3-3.5. Lowering the dielectric constant to 2.4, which will help reduce the capacitance and thereby the EPB by up to 40%. In this paper, a material with a dielectric constant 2.4 has been studied. In addition, different aspects of reliability of a new ultra-low k dielectric film that include, adhesion strength, capacitance, and leakage current before and after highly accelerated stress test (HAST-85% RH, 130 °C for 100 hours) are presented. The paper also presents the results of process optimization to achieve < 3 μm line width/ space (L/S) using this build-up layer material along with an advanced photoresist. Semi-additive processing (SAP) is employed for this purpose and results of the minimum line/space (L/S) feature sizes obtained by employing different lithography techniques such as projection stepper and maskless aligner will also be presented. This paper will also present the results of advanced characterization tools for measuring the critical dimensions (CDs).

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Producing Lunar Steel and Oxygen using Molten Lunar Regolith Electrolysis

Producing Lunar Steel and Oxygen using Molten Lunar Regolith...

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Accelerating Space Commerce, Exploration, and New Discovery Conference, ASCEND 2023

作者： Patel, Palak B. Soto, Jose Adams, Zachary K. Koller, Scarlett Latyshev, Kir Boothe, Evan Cooper, Amber Fontanez, Jonatan Jalil, Laman Ma, Beverly Meza, Cesar Misquitta, Kristoff Na, Hyein Nguyen, Tom Pendley, Hezekiah Sangabattula, Lokesh Usey, Helena Zehner, Alice Allanore, Antoine Culpepper, Martin De Weck, Olivier Lordos, George Hoffman, Jeffrey Bergman, Dean Department of Mechanical Engineering Massachusetts Institute of Technology CambridgeMA02139 United States Department of Aeronautics and Astronautics Massachusetts Institute of Technology CambridgeMA02139 United States Department of Electrical Engineering and Computer Science Massachusetts Institute of Technology CambridgeMA02139 United States Department of Aeronautics and Astronautics Massachusetts Institute of Technology Sloan School of Management CambridgeMA02139 United States Department of Chemical Engineering Massachusetts Institute of Technology CambridgeMA02139 United States Department of Material Science and Engineering Massachusetts Institute of Technology CambridgeMA02139 United States Honeybee Robotics Exploration Systems AltadenaCA91001 United States

ISBN: (纸本)9781624107054

With the current Artemis missions planned, by 2028, NASA and its international and commercial partners may be establishing a permanent presence at the lunar South pole. The Artemis Base Camp will be the locus of international and public-private collaboration under the Artemis Accords, helping to bootstrap a lunar economy. As the lunar economy grows, traffic of people and goods will grow with it. Thus, we envision that NASA and its international and commercial partners will have increasing long-term needs for producing metal from in situ resources such as lunar regolith. These metals can be used to produce many end products on the moon including large pressure vessels, both for spacious habitats and industrial-scale storage and operations. In this paper, as a part of the NASA 2023 BIG Idea Challenge ‘Lunar Forge: Producing Metal Products on the Moon’, we design and manufacture a molten regolith electrolysis (MRE) reactor capable of producing various alloys of steel and other metal products from lunar regolith, with oxygen as a useful byproduct. We have built ARTEMIS Steelworks (Advancing Reactor Technologies for Electrolytic Manufacturing of In situ Steel), which consists of an electrolytic reactor, supporting the addition of alloying elements to produce molten steel from lunar regolith simulant. To prepare for a lunar technology demonstration, a preliminary test of the reaction on Earth was performed in a vacuum, a sonicator was tested to dislodge oxygen bubbles from the anode to increase electrode life, and an automated iron and slag collector was made to reduce the need for astronaut operation. The project’s technical objectives are to demonstrate steel-making capability while also quantifying energy efficiency, steel quality, and the expected useful life of the electrodes and vessel under different configurations relative to the state of the art. The comprehensive testing plan presented here includes functional subsystem and integrated testing in ambient conditio

关键词： Electrolysis

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Plasma Jet Printing for Flexible Hybrid Electronics – A Review (Invited Paper)

Plasma Jet Printing for Flexible Hybrid Electronics – A Rev...

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International Flexible Electronics Technology Conference (IFETC)

作者： Jacob Manzi David Estrada Harish Subbaraman School of Electrical Engineering and Computer Science Oregon State University Corvallis OR USA Micron School of Material Science and Engineering Boise State University Boise ID USA Center for Advanced Energy Studies Boise State University Boise ID USA Idaho National Laboratory Idaho Falls ID USA

Plasma jet printing has been utilized in the area of additive manufacturing for flexible hybrid electronics. The advantages of PJP- gravity-independent deposition, in situ material tailoring, ability to fabricate on low-temperature substrates, and increased adhesion are discussed as they relate to the goals of the technology.

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Nanoscale confinement and control of excitonic complexes in a monolayer WSe2

arXiv

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arXiv 2023年

作者： Moon, Hyowon Mennel, Lukas Chakraborty, Chitraleema Peng, Cheng Almutlaq, Jawaher Taniguchi, Takashi Watanabe, Kenji Englund, Dirk Department of Electrical Engineering and Computer Science Massachusetts Institute of Technology CambridgeMA United States Center for Optoelectronic Materials and Devices Korea Institute of Science and Technology Seoul Korea Republic of InstVienna University of Technology Vienna Austria Department of Material Science and Engineering University of Delaware DE United States National Institute for Materials Science Ibaraki Tsukuba Japan

Nanoscale control and observation of photophysical processes in semiconductors is critical for basic understanding and applications from optoelectronics to quantum information processing. In particular, there are open questions and opportunities in controlling excitonic complexes in two-dimensional materials such as excitons, trions or biexcitons. However, neither conventional diffraction-limited optical spectroscopy nor lithography-limited electric control provides a proper tool to investigate these quasiparticles at the nanometer-scale at cryogenic temperature. Here, we introduce a cryogenic capacitive confocal optical microscope (C3OM) as a tool to study quasiparticle dynamics at the nanometer scale. Using a conductive atomic force microscope (AFM) tip as a gate electrode, we can modulate the electronic doping at the nanometer scale in WSe2 at 4K. This tool allows us to modulate with nanometer-scale confinement the exciton and trion peaks, as well a distinct photoluminescence line associated with a larger excitonic complex that exhibits distinctive nonlinear optical response. Our results demonstrate nanoscale confinement and spectroscopy of exciton complexes at arbitrary positions, which should prove an important tool for quantitative understanding of complex optoelectronic properties in semiconductors as well as for applications ranging from quantum spin liquids to superresolution measurements to control of quantum emitters. © 2023, CC BY.

关键词： Selenium compounds

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AlloyBERT: Alloy Property Prediction with Large Language Models

arXiv

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arXiv 2024年

作者： Chaudhari, Akshat Guntuboina, Chakradhar Huang, Hongshuo Farimani, Amir Barati Department of Material Science and Engineering Carnegie Mellon University 15213 United States Department of Electrical and Computer Engineering Carnegie Mellon University 15213 United States Department of Mechanical Engineering Carnegie Mellon University 15213 United States Department of Biomedical Engineering Carnegie Mellon University 15213 United States Machine Learning Department Carnegie Mellon University 15213 United States

The pursuit of novel alloys tailored to specific requirements poses significant challenges for researchers in the field. This underscores the importance of developing predictive techniques for essential physical properties of alloys based on their chemical composition and processing parameters. This study introduces AlloyBERT, a transformer encoder-based model designed to predict properties such as elastic modulus and yield strength of alloys using textual inputs. Leveraging the pre-trained RoBERTa encoder model as its foundation, AlloyBERT employs self-attention mechanisms to establish meaningful relationships between words, enabling it to interpret human-readable input and predict target alloy properties. By combining a tokenizer trained on our textual data and a RoBERTa encoder pre-trained and fine-tuned for this specific task, we achieved a mean squared error (MSE) of 0.00015 on the Multi Principal Elemental Alloys (MPEA) data set and 0.00611 on the Refractory Alloy Yield Strength (RAYS) dataset. This surpasses the performance of shallow models, which achieved a best-case MSE of 0.00025 and 0.0076 on the MPEA and RAYS datasets respectively. Our results highlight the potential of language models in material science and establish a foundational framework for text-based prediction of alloy properties that does not rely on complex underlying representations, calculations, or simulations. © 2024, CC BY-NC-ND.

关键词： Yield stress

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Measurement of Nd:Y2o3 Broad Band Near Infra-Red Transmittance Using Ftir System

SSRN

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SSRN 2023年

作者： Lee, Heesu Hwang, Seungjin Lee, Sungyoon Hong, Kyung Hee Oh, Hyeon-Myeong Park, Young-Jo Kim, Ha-Neul Yu, Tae Jun Department of Computer Science and Electrical Engineering Handong Global University Pohang Korea Republic of HIL Lab. Inc. Pohang Korea Republic of Department of Advanced Convergence Handong Global University Pohang Korea Republic of Engineering Ceramics Department Korea Institute of Material Science Changwon Korea Republic of

We report on the measurement of transmittance in Nd:Y2O3 using a homemade Fourier transform infrared (FTIR) spectroscopy measurement system. The transmittance of Nd:Y2O3 samples in the 850–1100 nm band was measured and compared with the theoretical transmittance. A figure of merit (FOM) was defined to assess the proximity of the measured value to the theoretical value. The maximum FOM obtained was 240, corresponding to 99.6% of the theoretical transmittance at a wavelength of 1078 nm. Our results demonstrate the high accuracy and precision of the FTIR system for measuring transmittance in Nd:Y2O3 samples within the near-infrared wavelength range. © 2023, The Authors. All rights reserved.

关键词： Infrared devices

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Technology Roadmap for Flexible Sensors

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ACS NANO 2023年第6期17卷 5211-5295页

作者： Luo, Yifei Abidian, Mohammad Reza Ahn, Jong-Hyun Akinwande, Deji Andrews, Anne M. Antonietti, Markus Bao, Zhenan Berggren, Magnus Berkey, Christopher A. Bettinger, Christopher John Chen, Jun Chen, Peng Cheng, Wenlong Cheng, Xu Choi, Seon-Jin Chortos, Alex Dagdeviren, Canan Dauskardt, Reinhold H. Di, Chong-an Dickey, Michael D. Duan, Xiangfeng Facchetti, Antonio Fan, Zhiyong Fang, Yin Feng, Jianyou Feng, Xue Gao, Huajian Gao, Wei Gong, Xiwen Guo, Chuan Fei Guo, Xiaojun Hartel, Martin C. He, Zihan Ho, John S. Hu, Youfan Huang, Qiyao Huang, Yu Huo, Fengwei Hussain, Muhammad M. Javey, Ali Jeong, Unyong Jiang, Chen Jiang, Xingyu Kang, Jiheong Karnaushenko, Daniil Khademhosseini, Ali Kim, Dae-Hyeong Kim, Il-Doo Kireev, Dmitry Kong, Lingxuan Lee, Chengkuo Lee, Nae-Eung Lee, Pooi See Lee, Tae-Woo Li, Fengyu Li, Jinxing Liang, Cuiyuan Lim, Chwee Teck Lin, Yuanjing Lipomi, Darren J. Liu, Jia Liu, Kai Liu, Nan Liu, Ren Liu, Yuxin Liu, Yuxuan Liu, Zhiyuan Liu, Zhuangjian Loh, Xian Jun Lu, Nanshu Lv, Zhisheng Magdassi, Shlomo Malliaras, George G. Matsuhisa, Naoji Nathan, Arokia Niu, Simiao Pan, Jieming Pang, Changhyun Pei, Qibing Peng, Huisheng Qi, Dianpeng Ren, Huaying Rogers, John A. Rowe, Aaron Schmidt, Oliver G. Sekitani, Tsuyoshi Seo, Dae-Gyo Shen, Guozhen Sheng, Xing Shi, Qiongfeng Someya, Takao Song, Yanlin Stavrinidou, Eleni Su, Meng Sun, Xuemei Takei, Kuniharu Tao, Xiao-Ming Tee, Benjamin C. K. Thean, Aaron Voon-Yew Trung, Tran Quang Wan, Changjin Wang, Huiliang Wang, Joseph Wang, Ming Wang, Sihong Wang, Ting Wang, Zhong Lin Weiss, Paul S. Wen, Hanqi Xu, Sheng Xu, Tailin Yan, Hongping Yan, Xuzhou Yang, Hui Yang, Le Yang, Shuaijian Yin, Lan Yu, Cunjiang Yu, Guihua Yu, Jing Yu, Shu-Hong Yu, Xinge Zamburg, Evgeny Zhang, Haixia Zhang, Xiangyu Zhang, Xiaosheng Zhang, Xueji Zhang, Yihui Zhang, Yu Zhao, Siyuan Zhao, Xuanhe Zheng, Yuanjin Zheng, Yu-Qing Zheng, Zijian Zhou, Tao Zhu, Bowen Zhu, Ming Zhu, Rong Zhu, Yangzhi Zhu, Yong Zou, Guijin Chen, Xiaodong 08-03 Innovis Singapore 138634 Republic of Singapore Innovative Centre for Flexible Devices (iFLEX) School of Materials Science and Engineering Nanyang Technological University Singapore 639798 Singapore Department of Biomedical Engineering University of Houston Houston Texas 77024 United States School of Electrical and Electronic Engineering Yonsei University Seoul 03722 Republic of Korea Department of Electrical and Computer Engineering The University of Texas at Austin Austin Texas 78712 United States Microelectronics Research Center The University of Texas at Austin Austin Texas 78758 United States Department of Chemistry and Biochemistry California NanoSystems Institute and Department of Psychiatry and Biobehavioral Sciences Semel Institute for Neuroscience and Human Behavior and Hatos Center for Neuropharmacology University of California Los Angeles Los Angeles California 90095 United States Colloid Chemistry Department Max Planck Institute of Colloids and Interfaces 14476 Potsdam Germany Department of Chemical Engineering Stanford University Stanford California 94305 United States Laboratory of Organic Electronics Department of Science and Technology Campus Norrköping Linköping University 83 Linköping Sweden Wallenberg Initiative Materials Science for Sustainability (WISE) and Wallenberg Wood Science Center (WWSC) SE-100 44 Stockholm Sweden Department of Materials Science and Engineering Stanford University Stanford California 94301 United States Department of Biomedical Engineering and Department of Materials Science and Engineering Carnegie Mellon University Pittsburgh Pennsylvania 15213 United States Department of Bioengineering University of California Los Angeles Los Angeles California 90095 United States School of Chemistry Chemical Engineering and Biotechnology Nanyang Technological University Singapore 637457 Singapore Nanobionics Group Department of Chemical and Biological Engineering Monash University Clayton Australia 3800 Monash

Humans rely increasingly on sensors to address grand challenges and to improve quality of life in the era of digitalization and big data. For ubiquitous sensing, flexible sensors are developed to overcome the limitations of conventional rigid counterparts. Despite rapid advancement in bench-side research over the last decade, the market adoption of flexible sensors remains limited. To ease and to expedite their deployment, here, we identify bottlenecks hindering the maturation of flexible sensors and propose promising solutions. We first analyze continued...challenges in achieving satisfactory sensing performance for real-world applications and then summarize issues in compatible sensor-biology interfaces, followed by brief discussions on powering and connecting sensor networks. Issues en route to commercialization and for sustainable growth of the sector are also analyzed, highlighting environmental concerns and emphasizing nontechnical issues such as business, regulatory, and ethical considerations. Additionally, we look at future intelligent flexible sensors. In proposing a comprehensive roadmap, we hope to steer research efforts towards common goals and to guide coordinated development strategies from disparate communities. Through such collaborative

关键词： soft materials mechanics engineering flexible electronics conformable sensors bioelectronics human-machine interfaces body area sensor networks technology translation sustainable electronics

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