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Methylene Blue Adsorption by Plasma Re-Activated Carbon

Journal of Water Resource and Protection 2021年第10期13卷 778-793页

作者： Madeline A. Mackinder Keliang Wang Qi Hua Fan Department of Chemical Engineering and Material Science Michigan State University East Lansing MI USA Department of Electrical Engineering & Computer Engineering Michigan State University East Lansing MI USA

The effects of O2 plasma treatment on the adsorption capacity of activated carbon (AC) were investigated by varying the plasma treatment times. The surface properties of the AC were characterized by transmission elect... 详细信息

The effects of O₂ plasma treatment on the adsorption capacity of activated carbon (AC) were investigated by varying the plasma treatment times. The surface properties of the AC were characterized by transmission electron microscopy (TEM), X-ray photoelectron spectroscopy (XPS), and Zeta potential. The carbon was then applied to remove methylene blue (MB). The adsorption kinetics and isotherm were also studied. Results showed that pseudo-second-order kinetics was the most suitable model for describing the adsorption of MB onto AC. Equilibrium data were well fitted to the Freundlich isotherm model. The highest adsorption capacity resulted from 4 minutes of O2 plasma treatment. The 4-minute plasma treated AC had the best adsorption capacity for MB at 0.467 mg/mg. This work shows that activation of AC by plasma can open the micropore and increase the effectiveness of chemical removal.

关键词： Plasma Activated Carbon Methylene Blue

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Emittance mapping in rf guns

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Physical Review Accelerators and Beams 2023年第11期26卷 113402-113402页

作者： Benjamin Sims Sergey V. Baryshev Department of Electrical and Computer Engineering Michigan State University Michigan 48824 USA Department of Physics and Astronomy Michigan State University East Lansing Michigan 48824 USA Facility for Rare Isotope Beams Michigan State University East Lansing Michigan 48824 USA Department of Chemical Engineering and Material Science Michigan State University Michigan 48824 USA

This paper discusses the trends and tradeoffs between transverse σx and longitudinal σz bunch dimensions, rf injector gradient, bunch charge, and intrinsic electron mean transverse energy (MTE), where all can be chosen to be independent, and the resulting effects on emittance and transverse brightness. Using a practical example of a quarter wave normal conducting photoinjector, it is computationally found that regardless of MTE and bunch charge, there is a universal relation between the gradient E and the aspect ratio of the bunch (σx/σz) leading to the highest brightness. This computational result is understood using an analytical formalism consisting of Kim’s emittance formulation and a two-dimensional space charge model. The results, obtained computationally and interpreted in a robust physical framework, could therefore provide the basis for an express mapping approach for emittance forecasting when used with practical injector system design requirements and limitations.

关键词： Beam dynamics Space charge in beams

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Porous silicon on paper sensors: Factors affecting biosensing performance 17

Porous silicon on paper sensors: Factors affecting biosensin...

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Frontiers in Biological Detection: From Nanosensors to Systems XVII 2025

作者： An, Huijin Laibinis, Paul E. Locke, Andrea K. Weiss, Sharon M. Interdisciplinary Material Science Program Vanderbilt University NashvilleTN37235 United States Department of Electrical and Computer Engineering Vanderbilt University NashvilleTN37235 United States Department of Chemical and Biomolecular Engineering Vanderbilt University NashvilleTN37235 United States Department of Chemistry Vanderbilt University NashvilleTN37235 United States Department of Biomedical Engineering Vanderbilt University NashvilleTN37235 United States

ISBN: (纸本)9781510684249

A paper-based biosensor integrating a functionalized porous silicon (PSi) membrane as the active sensing element for quantifiable protein detection has been developed. For similar short-time exposures to an analyte, improved molecular transport in PSi membranes when on paper leads to larger signal changes compared to traditional PSi films that remain on a silicon substrate. In this work, we discuss controlling the incubation time of the analyte and the overall testing time of the sensor by incorporating different combinations of wicking and absorbent paper beneath the PSi membrane. With this control, the PSi-on-paper sensor platform has the potential to serve as an effective low-cost rapid diagnostic test with highly sensitive, quantitative readout for a wide range of analytes. © 2025 SPIE.

关键词： Porous silicon

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Two-photon polymerization lithography for imaging optics

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International Journal of Extreme Manufacturing 2024年第4期6卷 21-60页

作者： Hao Wang Cheng-Feng Pan Chi Li Kishan S Menghrajani Markus A Schmidt Aoling Li Fu Fan Yu Zhou Wang Zhang Hongtao Wang Parvathi Nair Suseela Nair John You En Chan Tomohiro Mori Yueqiang Hu Guangwei Hu Stefan A Maier Haoran Ren Huigao Duan Joel K W Yang College of Mechanical and Vehicle Engineering Hunan UniversityChangsha 410082People's Republic of China Engineering Product Development Singapore University of Technology and DesignSingapore 487372Singapore Greater Bay Area Institute for Innovation Hunan UniversityGuangzhou 511300People's Republic of China Department of Electrical and Computer Engineering National University of Singapore4 Engineering Drive 3Singapore 117576Singapore School of Physics and Astronomy Faculty of ScienceMonash UniversityMelbourneVictoria 3800Australia Leibniz Institute of Photonic Technology 07745 JenaGermany Abbe Center of Photonics and Faculty of Physics FSU Jena07745 JenaGermany Otto Schott Institute of Material Research FSU Jena07745 JenaGermany Institute of Materials Research and Engineering A*STAR(Agency for Science Technology and Research)Singapore 138634Singapore Industrial Technology Center of Wakayama Prefecture Wakayama 6496261Japan School of Electrical and Electronic Engineering Nanyang Technological UniversitySingapore639798Singapore Department of Physics Imperial College LondonLondon SW72AZUnited Kingdom

Optical imaging systems have greatly extended human visual capabilities,enabling the observation and understanding of diverse *** technologies span a broad spectrum of wavelengths from x-ray to radio frequencies and impact research activities and our daily *** glass lenses are fabricated through a series of complex processes,while polymers offer versatility and ease of ***,modern applications often require complex lens assemblies,driving the need for miniaturization and advanced designs with micro-and nanoscale features to surpass the capabilities of traditional fabrication ***-dimensional(3D)printing,or additive manufacturing,presents a solution to these challenges with benefits of rapid prototyping,customized geometries,and efficient production,particularly suited for miniaturized optical imaging *** 3D printing methods have demonstrated advantages over traditional counterparts,yet challenges remain in achieving nanoscale ***-photon polymerization lithography(TPL),a nanoscale 3D printing technique,enables the fabrication of intricate structures beyond the optical diffraction limit via the nonlinear process of two-photon absorption within liquid *** offers unprecedented abilities,***-free fabrication,micro-and nanoscale capabilities,and rapid prototyping of almost arbitrary complex 3D *** this review,we emphasize the importance of the criteria for optical performance evaluation of imaging devices,discuss material properties relevant to TPL,fabrication techniques,and highlight the application of TPL in optical *** the first panoramic review on this topic,it will equip researchers with foundational knowledge and recent advancements of TPL for imaging optics,promoting a deeper understanding of the *** leveraging on its high-resolution capability,extensive material range,and true 3D processing,alongside advances in materials,fabrication,and design,we en

关键词： two-photon polymerization lithography 3D printing additive manufacturing imaging optics and nanophotonics

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Enhanced Memory Performance in Ferroelectric NAND Applications: The Role of Tunnel Dielectric Position for Robust 10-Year Retention

Enhanced Memory Performance in Ferroelectric NAND Applicatio...

引用

Annual International Symposium on Reliability Physics

作者： Prasanna Venkatesan Andrea Padovani Lance Fernandes Priyankka Ravikumar Chinsung Park Huy Tran Zekai Wang Hari Jayasankar Amrit Garlapati Taeyoung Song Hang Chen Winston Chern Zheng Wang Kijoon Kim Jongho Woog Suhwan Lim Kwangsoo Kim Wanki Kim Daewon Ha Shimeng Yu Suman Dattal Luca Larcher Gaurav Thareja Asif Khanl School of Electrical and Computer Engineering Georgia Institute of Technology GA USA Engineering Department “Enzo Ferrari” University of Modena and Reggio Emilia Italy Institute of Electronics and Nanotechnology Georgia Institute of Technology GA USA Micron Technology USA Advanced Device Research Laboratory Semiconductor Research Center Samsung Electronics South Korea School of Material Science and Engineering Georgia Institute of Technology GA USA Applied Materials USA

ISBN: (数字)9798331504779

ISBN: (纸本)9798331504786

We report a comprehensive study on memory window (MW) enhancement and retention loss (RL) in ferroelectric (FE) field effect transistors for NAND applications with a dielectric layer inserted within the FE film (next to the gate ‒ GBL devices ‒ or in the middle of the FE layer ‒ TDL devices). Using a temperature-dependent modeling framework, we show that MW and RL properties are controlled respectively by carriers trapping into defects at the dielectric-FE interface and by its fragile balance with FE depolarization. While MW enhancement is achieved whenever the inserted dielectric layer is present, a robust retention is obtained only in TDL FEFETs, thanks to a stabilization of the trapped charge preventing FE depolarization. Simulation results clearly demonstrate that the fragile balance between above phenomena is ultimately controlled by the position of the dielectric layer, which determines i) the field redistribution within the stack, ii) the magnitude of charge de-trapping, and iii) the magnitude of the depolarization field. Our results provide critical guidelines for the improvement of FE 3D-NAND reliability.

关键词： Simulation Dielectric losses Tunneling Logic gates Iron Reliability FeFETs Physics Guidelines

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Utilizing (Al,Ga)2O3/Ga2O3 superlattices to measure cation vacancy diffusion and vacancy-concentration-dependent diffusion of Al, Sn, and Fe in β-Ga2O3

arXiv

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arXiv 2024年

作者： Rock, Nathan D. Yang, Haobo Eisner, Brian Levin, Aviva Bhattacharyya, Arkka Krishnamoorthy, Sriram Ranga, Praneeth Walker, Michael A. Wang, Larry Cheng, Ming Kit Zhao, Wei Scarpulla, Michael A. Department of Materials Science and Engineering University of Utah Salt Lake CityUT84112 United States Department of Electrical and Computer Engineering University of Utah Salt Lake CityUT84112 United States Materials Department University of California Santa Barbara Santa BarbaraCA93106 United States Department of Metallurgical and Materials Engineering Colorado School of Mines GoldenCO80401 United States Eurofins EAG Material Science SunnyvaleCA94086 United States

Diffusion of native defects such as vacancies and their interactions with impurities are fundamental in semiconductor crystal growth, device processing, and long-term aging of equilibration and transient diffusion of vacancies are rarely investigated. We used (AlxGa1−x)2O3/Ga2O3 superlattices (SLs) to detect and analyze transient diffusion of cation vacancies during annealing in O2 at 1000 − 1100◦C. Using a novel finite difference scheme for the diffusion equation with time- and space-varying diffusion constant, we extract diffusion constants for Al, Fe, and cation vacancies under the given conditions, including the vacancy concentration dependence for Al. In the case of SLs grown on Sn-doped β − Ga2O3 (010) substrates, gradients observed in the extent of Al diffusion indicate that vacancies present in the substrate transiently diffuse through the SLs, interacting with Sn as it also diffuses. In the case of SLs grown on (010) Fe-doped substrates, the Al diffusion is uniform through the SLs, indicating a depth-uniform concentration of vacancies. We find no evidence in either case for the introduction of VGa from the free surface at rates sufficient to affect Al diffusion down to ppm concentrations, which has important bearing on the validity of typically-made assumptions of vacancy equilibration. Additionally, we show that unintentional impurities in Sn-doped Ga2O3 such as Fe, Ni, Mn, Cu, and Li also diffuse towards the surface and accumulate. Many of these likely have fast interstitial diffusion modes capable of destabilizing devices over time, thus highlighting the importance of controlling unintentional impurities in β − Ga2O3 wafers. Copyright © 2024, The Authors. All rights reserved.

关键词： Gallium compounds

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Realizing Linear Synaptic Plasticity in Electric Double Layer-Gated Transistors for Improved Predictive Accuracy and Efficiency in Neuromorphic Computing

arXiv

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arXiv 2024年

作者： Manimaran, Nithil Harris Sutton, Cori Streamer, Jake Merkel, Cory Xu, Ke Microsystems Engineering School of Physics and Astronomy Rochester Institute of Technology RochesterNY14623 United States Multidisciplinary Study Rochester Institute of Technology RochesterNY14623 United States Department of Electrical and Computer Engineering Rochester Institute of Technology RochesterNY14623 United States School of Chemistry and Material Science Rochester Institute of Technology RochesterNY14623 United States

Neuromorphic computing offers a low-power, parallel alternative to traditional von Neumann architectures by addressing the sequential data processing bottlenecks. Electric double layer-gated transistors (EDLTs) resemble biological synapses with their ionic response and offer low power operations, making them suitable for neuromorphic applications. A critical consideration for artificial neural networks (ANNs) is achieving linear and symmetric plasticity (i.e., weight updates) during training, as this directly affects accuracy and efficiency. This study uses finite element modeling to explore EDLTs as artificial synapses in ANNs and investigates the underlying mechanisms behind the nonlinear weight updates observed experimentally in previous studies. By solving modified Poisson-Nernst-Planck (mPNP) equations, we examined ion dynamics within an EDL capacitor and their effects on plasticity, revealing that the rates of EDL formation and dissipation are concentration-dependent. Fixed-magnitude pulse inputs result in decreased formation and increased dissipation rates, leading to nonlinear weight updates. For a pulse magnitude of 1 V, both 1 ms 500 Hz and 5 ms 100 Hz pulse inputs saturated at less than half of the steady state EDL concentration, limiting the number of accessible states and operating range of devices. To address this, we developed a predictive linear ionic weight update solver (LIWUS) in Python to predict voltage pulse inputs that achieve linear plasticity. We then evaluated an ANN with linear and nonlinear weight updates on the MNIST classification task. The ANN with LIWUS-provided linear weight updates required 19% fewer (i.e. 5) epochs in both training and validation than the network with nonlinear weight updates to reach optimal performance. It achieved a 97.6% recognition accuracy, 1.5 – 4.2% higher than with nonlinear updates, and a low standard deviation of 0.02%. The network model is amenable to future spiking neural network applications, and the

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Colossal Birefringence from Periodic Structural Modulations

Colossal Birefringence from Periodic Structural Modulations

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2023 Conference on Lasers and Electro-Optics, CLEO 2023

作者： Mei, Hongyan Ren, Guodong Zhao, Boyang Salman, Jad Jung, Gwan-Yeong Chen, Huandong Thind, Arashdeep S. Cavin, John Hachtel, Jordan A. Chi, Miaofang Niu, Shanyuan Joe, Graham Wan, Chenghao Settineri, Nick Teat, Simon J. Chakoumakos, Bryan C. Ravichandran, Jayakanth Mishra, Rohan Kats, Mikhail A. Department of Electrical and Computer Engineering University of Wisconsin-Madison MadisonWI53706 United States Institute of Materials Science and Engineering Washington University in St. Louis St. LouisMO63130 United States Mork Family Department of Chemical Engineering and Materials Science University of Southern California Los AngelesCA90089 United States Department of Mechanical Engineering and Material Science Washington University in St. Louis St. LouisMO63130 United States Department of Physics Washington University in St. Louis St. LouisMO63130 United States Center for Nanophase Materials Sciences Oak Ridge National Laboratory Oak RidgeTN37830 United States Department of Materials Science and Engineering University of Wisconsin-Madison MadisonWI53706 United States Advanced Light Source Lawrence BerkeleyNational Laboratory BerkeleyCA94720 United States Neutron Scattering Division Oak Ridge NationalLaboratory Oak RidgeTN37830 United States Ming Hsieh Department of Electrical Engineering University of Southern California Los AngelesCA90089 United States

We introduce structural modulation as a new mechanism for achieving colossal optical anisotropy. Modulated nonstoichiometric material Sr9/8TiS3 is shown to have an extraordinary refractive index ne = 4.5 and ordinary ... 详细信息

ISBN: (纸本)9781957171258

关键词： Refractive index

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Origin and enhancement of the spin Hall angle in the Weyl semimetals LaAlSi and LaAlGe

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Physical Review B 2021年第1期104卷 014412-014412页

作者： Truman Ng Yongzheng Luo Jiaren Yuan Yihong Wu Hyunsoo Yang Lei Shen (沈雷) Engineering Science Programme National University of Singapore 117575 Singapore Department of Mechanical Engineering National University of Singapore 117575 Singapore Faculty of Science and School of Material Science and Engineering Jiangsu University Zhenjiang 212013 China Department of Electrical and Computer Engineering National University of Singapore 117576 Singapore

We study the origin of the strong spin Hall effect (SHE) in a recently discovered family of Weyl semimetals, LaAlX (X = Si, Ge) via first-principles with maximally localized Wannier functions. We show that the strong intrinsic spin Hall effect in LaAlX originates from the multiple slight anticrossings of nodal lines and points near to the Fermi energy due to their high-mirror symmetry and large spin-orbit interaction. It is further found that hole doping and increasing the temperature can enhance the spin Hall conductivity (σSH). However, the former also increases the electrical conductivity (σc), while the latter decreases it. As a result, the independent tuning of σSH and σc by increasing the temperature can enhance the spin Hall angle (proportional to σSHσc), a figure of merit of charge-to-spin current interconversion of spin-orbit torque devices. The underlying physics of such independent changes of the spin Hall and electrical conductivities by thermal means is revealed through the band-resolved and k-resolved spin Berry curvature. Our finding offers a way in the search of high spin Hall angle materials for room temperature spin-orbitronics applications.

关键词： Spin Hall effect Semimetals Density functional calculations Wannier function methods

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Full-Duplex Beamforming in the Sub-Terahertz Regime

Full-Duplex Beamforming in the Sub-Terahertz Regime

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International Conference on Infrared and Millimeter Waves

作者： Subhajit Karmakar Atsutse Kludze Jacques Doumani Andrey Baydin Junichiro Kono Yasaman Ghasempour Department of Electrical and Computer Engineering Princeton University Princeton NJ USA Department of Electrical and Computer Engineering Rice University Houston TX USA Applied Physics Graduate Program Smalley-Curl Institute Rice University Houston TX USA Smalley-Curl Institute Rice University Houston TX USA Department of Physics and Astronomy Rice University Houston TX USA Department of Material Science and NanoEngineering Rice University Houston TX USA

We propose a novel architecture that realizes full-duplex directional beamforming in the sub-terahertz regime. Our architecture leverages the frequency-controlled beam steering of leaky-wave antenna together with the polarization-dependent response of aligned single-wall carbon nanotubes. We evaluate the performance of this architecture via preliminary experiments.

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