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Japanese Journal of Applied Physics 2024年第10期63卷 109301页

作者： Sanyal, Surjava Lin, Qinchen Shih, Timothy Zhang, Shijie Wang, Guangying Mukhopadhyay, Swarnav Zhang, Wentao Pasayat, Shubhra S Gupta, Chirag Vigen, Jonathan Department of Electrical and Computer Engineering University of Wisconsin-Madison Madison WI 53706 United States of America Department of Material Science and Engineering University of Wisconsin-Madison Madison WI 53706 United States of America

engineering of anomalous Josephson effect in coherently coupled Josephson junctions

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arXiv 2023年

作者： Matsuo, Sadashige Imoto, Takaya Yokoyama, Tomohiro Sato, Yosuke Lindemann, Tyler Gronin, Sergei Gardner, Geoffrey C. Manfra, Michael J. Tarucha, Seigo Center for Emergent Matter Science RIKEN Saitama351-0198 Japan Department of Physics Tokyo University of Science Tokyo162-8601 Japan Department of Material Engineering Science Graduate School of Engineering Science Osaka University Osaka560-8531 Japan Birck Nanotechnology Center Purdue University West LafayetteIN47907 United States Department of Physics and Astronomy Purdue University West LafayetteIN47907 United States School of Materials Engineering Purdue University West LafayetteIN47907 United States Elmore Family School of Electrical and Computer Engineering Purdue University West LafayetteIN47907 United States RIKEN Center for Quantum Computing RIKEN Saitama351-0198 Japan

A Josephson junction (JJ) is a key device in the development of superconducting circuits, wherein a supercurrent in the JJ is controlled by the phase difference between the two superconducting electrodes. Recently, it has been shown that the JJ current is nonlocally controlled by the phase difference of another nearby JJ via coherent coupling. Here, we use the nonlocal control to engineer the anomalous Josephson effect. We observe that a supercurrent is produced by the nonlocal phase control even without any local phase difference, using a quantum interference device. The nonlocal phase control simultaneously generates an offset of a local phase difference giving the JJ ground state. These results provide novel concepts for engineering superconducting devices such as phase batteries and dissipationless rectifiers. © 2023, CC BY.

关键词： Ground state

A study of low-annealing-temperature ohmic contact on n-Type GaN layers

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A study of low-annealing-temperature ohmic contact on n-Type...

2020 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2020

作者： Cho, Minkyu Bakhtiary-Noodeh, Marzieh Schaffer, William Xu, Zhiyu Detchprohm, Theeradetch Dupuis, Russell D. Wu, Barry D'Avanzo, Don Shen, Shyh-Chiang School of Electrical and Computer Engineering Georgia Institute of Technology AtlantaGA United States Department of Material Science and Engineering Georgia Institute of Technology AtlantaGA United States Keysight Technologies Inc. Santa RosaCA United States

ISBN: (纸本)9781893580305

Typical n-type ohmic contact formation for GaN material systems requires high-temperature thermal processes. The high-temperature process often leads to a rough surface after the annealing step. Low-annealingohmic contact is advantageous to prevent undesired surface roughening on the metal stack during this thermal process. We report an approach to achieve low contact resistance on n-type GaN layers using a nitrogen plasma and a conventional Ti/Al-based metal stacks. We observed an as-deposit ohmic contact behavior on the ntype contact with a specific contact resistance (ρc,sp) in the mid-E-6 & cm2range. The ρc,spwas further reduced to 6.8E-7 & cm2after an annealing step at 600 °C. © CS MANTECH 2020 - 2020 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers.

关键词： Ohmic contacts

Free-Electron Ramsey-Type Interferometry for Enhanced Amplitude and Phase Imaging of Nearfields

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arXiv 2023年

作者： Bucher, Tomer Ruimy, Ron Tsesses, Shai Dahan, Raphael Bartal, Guy Vanacore, Giovanni Maria Kaminer, Ido Andrew and Erna Viterbi department of Electrical & Computer Engineering Technion-Israel Institute of Technology Haifa3200003 Israel Solid State Institute Technion-Israel Institute of Technology Haifa3200003 Israel Department of Physics Research Laboratory of Electronics Massachusetts Institute of Technology CambridgeMA02139 United States Department of Material Science University of Milano-Bicocca Via Cozzi 55 Milano20121 Italy

The complex range of interactions between electrons and electromagnetic fields gave rise to countless scientific and technological advances. A prime example is photon-induced nearfield electron microscopy (PINEM), enabling the detection of confined electric fields in illuminated nanostructures with unprecedented spatial resolution. However, PINEM is limited by its dependence on strong fields, making it unsuitable for sensitive samples, and its inability to resolve complex phasor information. Here, we leverage the nonlinear, over-constrained nature of PINEM to present an algorithmic microscopy approach, achieving far superior nearfield imaging capabilities. Our algorithm relies on free-electron Ramsey-type interferometry to produce orders-of-magnitude improvement in sensitivity and ambiguity-immune nearfield phase reconstruction, both of which are optimal when the electron exhibits a fully quantum behavior. Our results demonstrate the potential of combining algorithmic approaches with novel modalities in electron microscopy, and may lead to various applications from imaging sensitive biological samples to performing full-field tomography of confined light. © 2023, CC BY-SA.

关键词： Electron microscopy

Demonstration of Glass-based 3D Package Architectures with Embedded Dies for High Performance Computing

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Demonstration of Glass-based 3D Package Architectures with E...

Electronic Components and Technology Conference (ECTC)

作者： Siddharth Ravichandran Vanessa Smet Madhavan Swaminathan Rao Tummala 3D Systems Packaging Research Center School of Electrical and Computer Engineering Georgia Institute of Technology Atlanta USA 3D Systems Packaging Research Center School of Mechanical Engineering Georgia Institute of Technology Atlanta USA 3D Systems Packaging Research Center School of Material Science and Engineering Georgia Institute of Technology Atlanta USA

This paper presents a technology demonstration of two novel 3D glass-based architectures for high performance computing applications. Current 3D technologies are limited by Through Silicon Vias (TSVs), and the proposed approached based on Glass Panel Embedding (GPE) eliminates TSVs resulting in a more robust 3D packaging platform that supports a variety of architectures. Two such architectures are designed and demonstrated in this paper. The first test vehicle shows multiple dies embedded and interconnected in a glass cavity, along with dies assembled on top using a microbump interface. The second test vehicle shows a 50x50 mm glass interposer package with 4 dies embedded in the core, 8 HBM emulators & 2 large SoCs assembled on top at 35 micron-bump pitch.

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Imaging 3D Chemistry at 1 nm Resolution with Fused Multi-Modal Electron Tomography

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arXiv 2023年

作者： Schwartz, Jonathan Di, Zichao Wendy Jiang, Yi Manassa, Jason Pietryga, Jacob Qian, Yiwen Cho, Min Gee Rowell, Jonathan L. Zheng, Huihuo Robinson, Richard D. Gu, Junsi Kirilin, Alexey Rozeveld, Steve Ercius, Peter Fessler, Jeffrey A. Xu, Ting Scott, Mary Hovden, Robert Department of Materials Science and Engineering University of Michigan Ann ArborMI United States Mathematics and Computer Science Division Argonne National Laboratory LemontIL United States Advanced Photon Source Facility Argonne National Laboratory LemontIL United States Department of Material Science and Engineering Northwestern University EvanstonIL United States Department of Materials Science and Engineering University of California at Berkeley BerkeleyCA United States Department of Chemistry and Chemical Biology Cornell University IthacaNY United States Argonne Leadership Computing Facility Argonne National Laboratory LemontIL United States Department of Material Science and Engineering Cornell University IthacaNY United States Kavli Institute at Cornell for Nanoscale Science Cornell University IthacaNY United States Dow Chemical Co. MidlandMI United States National Center for Electron Microscopy Molecular Foundry Lawrence Berkeley National Laboratory BerkeleyCA United States Department of Electrical Engineering and Computer Science University of Michigan Ann ArborMI United States Materials Science Division Lawrence Berkeley National Laboratory BerkeleyCA United States Applied Physics Program University of Michigan Ann ArborMI United States

Measuring the three-dimensional (3D) distribution of chemistry in nanoscale matter is a longstanding challenge for metrological science. The inelastic scattering events required for 3D chemical imaging are too rare, requiring high beam exposure that destroys the specimen before an experiment completes. Even larger doses are required to achieve high resolution. Thus, chemical mapping in 3D has been unachievable except at lower resolution with the most radiation-hard materials. Here, high-resolution 3D chemical imaging is achieved near or below one nanometer resolution in a Au-Fe3O4 metamaterial, Co3O4 - Mn3O4 core-shell nanocrystals, and ZnS-Cu0.64S0.36 nanomaterial using fused multi-modal electron tomography. Multi-modal data fusion enables high-resolution chemical tomography often with 99% less dose by linking information encoded within both elastic (HAADF) and inelastic (EDX / EELS) signals. Now sub-nanometer 3D resolution of chemistry is measurable for a broad class of geometrically and compositionally complex materials. © 2023, CC BY.

关键词： Zinc sulfide

A Tight-Binding Model for Gallium Oxide: The Newest Ultra Wide-Bandgap Semiconductor

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A Tight-Binding Model for Gallium Oxide: The Newest Ultra Wi...

IEEE MIT Undergraduate Research Technology Conference (URTC)

作者： Yifan Frank Zhang Mengren Bill Liu Guru Khalsa Debdeep Jena Huili Grace Xing Electrical and Computer Engineering Cornell University Ithaca USA Material Science and Engineering Cornell University Ithaca USA

ISBN: (纸本)9781728175720

Ga 2 O 3 , a novel ultra wide-bandgap semiconductor, shows promise for future-generation energy-efficient electronic devices. Ga 2 O 3 presents new challenges when compared with conventional semiconductors due to the presence of polymorphs - structural phases with differing electronic and photonic properties. While modern ab initio electronic structure techniques provide a powerful description of the bulk electronic bandstruc-ture, they become cumbersome when applied to devices and defects. To remedy the need for a compact description of the electronic structure, we develop tight-binding models derived from atomic-orbital and maximally-localized Wannier function bases to describe the valence and conduction band states of the monoclinic and rhombohedral structural phases of Ga 2 O 3 . This model accurately reproduces key features of their electronic structure, a necessary step towards the general description of the functional behaviors of Ga 2 O 3 in heterostructures and devices. This model accurately reproduces low- and high-energy features of the conduction band as well as the bandgap.

关键词： Gallium Photonic band gap Conferences Energy efficiency Photonics

Growth, catalysis and faceting of α-Ga2O3 and α-(InxGa1−x)2O3 on m-plane α-Al2O3 by molecular beam epitaxy

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arXiv 2023年

作者： Williams, Martin S. Alonso-Orts, Manuel Schowalter, Marco Karg, Alexander Raghuvansy, Sushma McCandless, Jon P. Jena, Debdeep Rosenauer, Andreas Eickhoff, Martin Vogt, Patrick Institute of Solid State Physics University of Bremen Otto-Hahn-Allee 1 Bremen28359 Germany MAPEX Center for Materials and Processes University of Bremen Bibliothekstraße 1 Bremen28359 Germany School of Electrical and Computer Engineering Cornell University 229 Phillip’s Hall NY14853 United States Department of Material Science and Engineering Cornell University Bard Hall NY14853 United States Kavli Institute Cornell for Nanoscale Science Cornell University IthacaNYNY-14853 United States

The growth of α-Ga2O3 and α-(InxGa1−x)2O3 on m-plane α-Al2O3(101¯0) by molecular beam epitaxy (MBE) and metal-oxide-catalyzed epitaxy (MOCATAXY) is investigated. By systematically exploring the parameter space accessed by MBE and MOCATAXY, phase-pure α-Ga2O3(101¯0) and α-(InxGa1−x)2O3(101¯0) thin films are realized. The presence of In on the α-Ga2O3 growth surface remarkably expands its growth window far into the metal-rich flux regime and to higher growth temperatures. With increasing O-to-Ga flux ratio (RO), In incorporates into α-(InxGa1−x)2O3 up to x ≤ 0.08. Upon a critical thickness, β-(InxGa1−x)2O3 nucleates and subsequently heteroepitaxially grows on top of α-(InxGa1−x)2O3 facets. Metal-rich MOCATAXY growth conditions, where α-Ga2O3 would not conventionally stabilize, lead to single-crystalline α-Ga2O3 with negligible In incorporation and improved surface morphology. Higher TG further results in single-crystalline α-Ga2O3 with well-defined terraces and step edges at their surfaces. For RO ≤ 0.53, In acts as a surfactant on the α-Ga2O3 growth surface by favoring step edges, while for RO ≥ 0.8, In incorporates and leads to a-plane α-(InxGa1−x)2O3 faceting and the subsequent (2¯01) β-(InxGa1−x)2O3 growth on top. Thin film analysis by STEM reveals highly crystalline α-Ga2O3 layers and interfaces. We provide a phase diagram to guide the MBE and MOCATAXY growth of single-crystalline α-Ga2O3 on α-Al2O3(101¯0). © 2023, CC BY-NC-ND.

关键词： Gallium compounds

Offloading safety- And mission-critical tasks via unreliable connections 32

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Offloading safety- And mission-critical tasks via unreliable...

32nd Euromicro Conference on Real-Time Systems, ECRTS 2020

作者： Schönberger, Lea Chen, Kuan-Hsun Youssef, Hazem Wietfeld, Christian Chen, Jian-Jia von der Brüggen, Georg Sliwa, Benjamin Venkatapathy, Aswin Karthik Ramachandran ten Hompel, Michael Design Automation for Embedded Systems Group Faculty of Computer Science TU Dortmund University Germany Material Handling and Warehousing Faculty of Mechanical Engineering TU Dortmund University Germany Communication Networks Institute Faculty of Electrical Engineering TU Dortmund University Germany

ISBN: (纸本)9783959771528

For many cyber-physical systems, e.g., IoT systems and autonomous vehicles, offloading workload to auxiliary processing units has become crucial. However, since this approach highly depends on network connectivity and responsiveness, typically only non-critical tasks are offloaded, which have less strict timing requirements than critical tasks. In this work, we provide two protocols allowing to offload critical and non-critical tasks likewise, while providing different service levels for non-critical tasks in the event of an unsuccessful offloading operation, depending on the respective system requirements. We analyze the worst-case timing behavior of the local cyber-physical system and, based on these analyses, we provide a sufficient schedulability test for each of the proposed protocols. In the course of comprehensive experiments, we show that our protocols have reasonable acceptance ratios under the provided schedulability tests. Moreover, we demonstrate that the system behavior under our proposed protocols is strongly dependent on probability of unsuccessful offloading operations, the percentage of critical tasks in the system, and the amount of offloaded workload. © Lea Schönberger, Georg von der Brüggen, Kuan-Hsun Chen, Benjamin Sliwa, Hazem Youssef, Aswin Ramachandran, Christian Wietfeld, Michael ten Hompel, and Jian-Jia Chen.

关键词： Cyber Physical System

Ultrastrong Spin-Photon Coupling in Gadolinium Gallium Garnet

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Ultrastrong Spin-Photon Coupling in Gadolinium Gallium Garne...

2023 Conference on Lasers and Electro-Optics, CLEO 2023

作者： Kritzell, T. Elijah Bao, Junzhe Doumani, Jacques Lee, Jae Joon Xu, Hongjing Tay, Fuyang Nojiri, Hiroyuki Bamba, Motoaki Baydin, Andrey Kono, Junichiro Department of Electrical and Computer Engineering Rice University HoustonTX77005 United States Applied Physics Graduate Program Smalley-Curl Institute Rice University HoustonTX77005 United States Department of Physics and Astronomy Rice University HoustonTX77005 United States Institute for Materials Research Tohoku University Sendai980-8577 Japan The Hakubi Center for Advanced Research Kyoto University Kyoto606-8502 Japan Department of Physics I Kyoto University Kyoto606-8502 Japan Smalley-Curl Institute Rice University HoustonTX77005 United States Department of Material Science and NanoEngineering Rice University HoustonTX77005 United States

We examine ultrastrong coupling of an ensemble of paramagnetic spins in Gd3Ga5O12 with terahertz photons in the presence of a high external magnetic field both in the bulk and thin-film limits. © 2023 The Author(s)

ISBN: (纸本)9781957171258

关键词： Photons