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Reversible room-temperature ferromagnetism in Nb-doped SrTiO3 single crystals

Physical Review B 2013年第22期87卷 220405(R)-220405(R)页

作者： Z. Q. Liu W. M. Lü S. L. Lim X. P. Qiu N. N. Bao M. Motapothula J. B. Yi M. Yang S. Dhar T. Venkatesan Ariando NUSNNI-Nanocore National University of Singapore 117411 Singapore Department of Physics National University of Singapore 117542 Singapore Department of Electrical and Computer Engineering National University of Singapore 117576 Singapore Center for Ion Beam Applications National University of Singapore 117542 Singapore Department of Material Science and Engineering National University of Singapore 117576 Singapore

The search for oxide-based room-temperature ferromagnetism has been one of the holy grails in condensed matter physics. Room-temperature ferromagnetism observed in Nb-doped SrTiO3 single crystals is reported in this Rapid Communication. The ferromagnetism can be eliminated by air annealing (making the samples predominantly diamagnetic) and can be recovered by subsequent vacuum annealing. The temperature dependence of magnetic moment resembles the temperature dependence of carrier density, indicating that the magnetism is closely related to the free carriers. Our results suggest that the ferromagnetism is induced by oxygen vacancies. In addition, hysteretic magnetoresistance was observed for magnetic field parallel to the current, indicating that the magnetic moments are in the plane of the samples. The x-ray photoemission spectroscopy, the static time-of-flight and the dynamic secondary ion mass spectroscopy and proton induced x-ray emission measurements were performed to examine the magnetic impurities, showing that the observed ferromagnetism is unlikely due to any magnetic contaminant.

关键词： FERROMAGNETISM MAGNETICS PHOTOELECTRICITY ELECTRON emission GALVANOMAGNETIC effects

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Colloidal Ag nanoparticles enhanced polymer-LEDs by exciton-Surface plasmon coupling

Colloidal Ag nanoparticles enhanced polymer-LEDs by exciton-...

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Solid-State and Organic Lighting, SOLED 2013

作者： Ma, Xin Benavides, Jaime Haughn, Chelsea R. Xu, Fan Doty, Matthew F. Cloutier, Sylvain G. Department of Electrical and Computer Engineering University of Delaware Newark DE United States Département de Génie Électrique École de Technologie Supérieure Montréal QC Canada Department of Material Science and Engineering University of Delaware Newark DE United States

We report high performance enhancement in an all-solution processed polymer LED by incorporating large density of colloidal Ag nanoparticles. An 11-fold maximum luminance enhancement and a 20-fold maximum current effi... 详细信息

ISBN: (纸本)9781557529862

关键词： Silver nanoparticles

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Comparison of electric field dependent activation energy for electroformation in TaOx and TiOx based RRAMs

Comparison of electric field dependent activation energy for...

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IEEE International Workshop Integrated Reliability

作者： Abhishek A. Sharma Mohammad Noman Marek Skowronski James A. Bain Departments of Electrical & Computer Engineering Pittsburgh PA USA Departments of Material Science and Engineering Carnegie Mellon University Pittsburgh PA USA

Oxide based resistive switching memories are considered to be one of the front-runners for the next generation non-volatile memories. Forming, the critical one time programming process, is not well understood. In this work, we try to understand the dynamics of forming process in two model systems - TaO x and TiO x , and compare the similarities and the universality in its control parameters. After comparing the time, voltage and temperature dependent dynamics, we find that a 1/E (E being electric field) dependence causes the activation energy to reduce by more than an order of magnitude.

关键词： Transient analysis Switches Resistance Temperature measurement Films Voltage measurement

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Role of atomic variability in dielectric charging: A first-principles-based multiscale modeling study

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Physical Review B 2013年第20期88卷 205204-205204页

作者： R. P. Vedula S. Palit M. A. Alam A. Strachan School of Electrical and Computer Engineering Purdue University West Lafayette Indiana 47907 USA School of Material Science and Engineering and Birck Nanotechnology Center Purdue University West Lafayette Indiana 47907 USA

We present a dielectric charging model that combines ab initio calculations of trap levels with a continuum-level transport model and apply it to interpret charging currents in amorphous silicon nitride. Density functional theory calculations on an ensemble of structures predict a distribution of electron trap levels up to 1.8 eV below the conduction band edge and provide insight into the physical trapping mechanisms. Incorporating this information in the continuum model, as opposed to the standard approach of a single adjustable trap level, not only leads to a more accurate description of experimental current transients in metal-insulator-metal capacitors, but also to a more precise and physical determination of associated material properties such as metal-dielectric barrier height.

关键词： DIELECTRIC function CHARGE transfer ELECTRON-electron interactions SILICON nitride DENSITY functional theory materialS science

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Considering fabrication in sustainable computing 13

Considering fabrication in sustainable computing

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IEEE International Conference on computer-Aided Design

作者： Alex K. Jones Yiran Chen William O. Collinge Haifeng Xu Laura A. Schaefer Amy E. Landis Melissa M. Bilec Electrical and Computer Engineering University of Pittsburgh Civil and Environmental Engineering University of Pittsburgh Mechanical Engineering and Material Science University of Pittsburgh School of Sustainable Engineering and the Built Environment Arizona State University

ISBN: (纸本)9781479910694

The term green computing has become effectively synonymous with low-power/energy computing. However, for computing to be truly sustainable, all phases of the system life-cycle must be considered. In contrast to the considerable effort that has been applied to address the use-phase energy consumption issue - ranging from battery powered embedded systems to data center servers - there is limited awareness or attention to the considerable energy consumption and environmental impacts from semiconductor fabrication. Current research indicates that fabrication is responsible for a significant factor of the energy utilized by these systems throughout their life-cycle. The trends of technology scaling coupled with developing hybrid fabrication solutions for integration of emerging technologies, while beneficial for use-phase power consumption, exacerbate these increasing environmental impacts from fabrication. Thus, design for sustainability is a grand challenge that must be addressed over the next decade.

关键词： computers Fabrication Market research Integrated circuits Buildings Monitoring

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Three-Dimensional Simulation of Plasma Deformation During Contact Opening in a Circuit Breaker,Including the Analysis of Kink Instability and Sausage Instability

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Plasma science and Technology 2012年第11期14卷 996-1001页

作者： Vahid ABBASI Ahmad GHOLAMI Kaveh NIAYESH High Voltage and Magnetic Material Research Center Electrical Engineering DepartmentIran University of Science and Technology School of Electrical and Computer Engineering University of Tehran

A three-dimensional （3-D） transient model has been developed to investigate plasma deformation driven by a magnetic field and its influence on arc stability in a circuit breaker. The 3-D distribution of electric current density is obtained from a current continuity equation along with the generalized Ohm＇s law; while the magnetic field induced by the current flowing through the arc column is calculated by the magnetic vector potential equation. When gas interacts with an arc column, fundamental factors, such as Ampere＇s law, Ohm＇s law, the turbulence model, transport equations of mass, momentum and energy of plasma flow, have to be coupled for aria- lyzing the phenomenon. The coupled interactions between arc and plasma flow are described in the fl＇amework of time-dependent magnetohydrodynamic （MHD） equations in conjunction with a K-~ turbulence model. Simulations have been focused on sausage and kink instabilities in plasma （these phenomena are related tO pinch effects and electromagnetic fields）. The 3-D sjm- ulation reveals the relation between plasma deformation and instability phenomena, which affect arc stability during circuit breaker operation. Plasma deformation is the consequence of coupled interactions between the electromagnetic force and plasma flow described in simulations.

关键词： magnetohydrodynamic （MHD） plasma deformation electromagnetic force kink instability sausage instability

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A Low-Power Wide-Dynamic-Range Readout IC for Breath Analyzer System

A Low-Power Wide-Dynamic-Range Readout IC for Breath Analyze...

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IEEE International Symposium on Circuits and Systems

作者： Yingkan Lin Perena Gouma Milutin Stanacevic Department of Electrical and Computer Engineering Stony Brook University Stony Brook NY USA Department of Material Science and Engineering Stony Brook University Stony Brook NY USA

ISBN: (纸本)9781467357609

We present a low-power wide-dynamic-range readout circuit that directly interfaces a selective metal-oxide gas sensor. The proposed novel readout architecture implements an adaptive baseline compensation and limits the sensor current. The readout IC can interface the sensors with the baseline resistance from 1 kΩ to 100 MΩ and measures the gas induced resistance change in the range from 0.05% to 10% of the baseline resistance. The simulations demonstrate the 166 dB dynamic range of the readout circuit and 113 μW power consumption amenable to the sensors that can operate at room temperature for the application of the proposed system in portable breath analyzers.

关键词： Breath Analyzer System baseline range

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Development of a 1200 V, 120 A SiC MOSFET module for high-temperature and high-frequency applications

Development of a 1200 V, 120 A SiC MOSFET module for high-te...

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IEEE Workshop on Wide Bandgap Power Devices and Applications (WiPDA)

作者： Zheng Chen Yiying Yao Wenli Zhang Dushan Boroyevich Khai Ngo Paolo Mattavelli Rolando Burgos The Bradley Dept. of Electrical and Computer Engineering Center for Power Electronics Systems (CPES) The Dept. of Material Science and Engineering Virginia Polytechnic Institute and State University Blacksburg VA USA

This paper presents a 1200 V, 120 A SiC MOSFET phase-leg module capable of operating at 200 °C ambient temperature. Paralleling six 20 A MOSFET bare dice for each switch, this module outperforms the commercial SiC modules in higher operating temperature and lower package parasitics at a comparable power rating. The module's high-temperature capability is validated through the extensive characterizations of the SiC MOSFET, as well as the careful selections of suitable packaging materials. Particularly, the sealed-step-edge technology is implemented on the DBC substrates to improve the module's thermal cycling lifetime. Though still based on the regular wire-bond structure, the module is able to achieve over 40% reduction in the switching loop inductance compared to a commercial SiC module by optimizing its internal layout. By further embedding decoupling capacitors directly on the substrates, the module also allows SiC MOSFETs to be switched twice faster with only one-third turn-off over-voltages compared to the commercial module.

关键词： MOSFET Silicon carbide Switches Substrates Layout Logic gates

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Green computing: A life cycle perspective

Green computing: A life cycle perspective

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International Green Computing Conference

作者： Alex K. Jones Liang Liao William O. Collinge Haifeng Xu Laura A. Schaefer Amy E. Landis Melissa M. Bilec Electrical and Computer Engineering University of Pittsburgh USA Civil and Environmental Engineering University of Pittsburgh USA Mechanical Engineering and Material Science University of Pittsburgh USA School of Sustainable Engineering and the Built Environment Arizona State University USA

ISBN: (纸本)9781479906215

Green computing has become synonymous with low-power/energy computing. However, many environmental impacts of computing, such as manufacturing, are significant, possibly moreso than the operational/use phase. In this paper we motivate manufacturing as an issue of sustainable computing. We also demonstrate the manufacturing component of chips plays a significant role in the overall energy consumption of the computer over its life-cycle. Current trends indicate this component will increase at more aggressive technology nodes. In the context of life-cycle assessment of larger systems, manufacturing of computer systems deployed in buildings can be significant compared to the construction of the building itself.

关键词： computers Buildings Integrated circuits Market research Fabrication Monitoring

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Tactile Feedback Display with Spatial and Temporal Resolutions (vol 3, 2521, 2013)

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SCIENTIFIC REPORTS 2013年第2013期3卷 2521-2521页

作者： Vishniakou, Siarhei Lewis, Brian W. Niu, Xiaofan Kargar, Alireza Sun, Ke Kalajian, Michael Park, Namseok Yang, Muchuan Jing, Yi Brochu, Paul Sun, Zhelin Li, Chun Truong Nguyen Pei, Qibing Wang, Deli Department of Electrical and Computer Engineering University of California - San Diego CA 92093 California Institute of Telecommunication and Information Technology University of California - San Diego CA 92093 Material Science Program University of California - San Diego CA 92093 Department of Material Science and Engineering University of California - Los Angeles CA 90095 These authors contributed equally to this work.

We report the electronic recording of the touch contact and pressure using an active matrix pressure sensor array made of transparent zinc oxide thin-film transistors and tactile feedback display using an array of diaphragm actuators made of an interpenetrating polymer elastomer network. Digital replay, editing and manipulation of the recorded touch events were demonstrated with both spatial and temporal resolutions. Analog reproduction of the force is also shown possible using the polymer actuators, despite of the high driving voltage. The ability to record, store, edit, and replay touch information adds an additional dimension to digital technologies and extends the capabilities of modern information exchange with the potential to revolutionize physical learning, social networking, e-commerce, robotics, gaming, medical and military applications.

关键词： ZINC oxide ACTUATORS POLYMERS SOCIAL networks PRESSURE transducers

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