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Mechanism of Threshold Voltage Instability in Double Gate α-IGZO Nanosheet TFT under Bias and Temperature Stress

IEEE Journal of the Electron Devices Society 2024年 12卷 464-471页

作者： Aslam, Muhammad Chang, Shu-Wei Chen, Yi-Ho Lee, Yao-Jen Li, Yiming Lee, Wen-Hsi Parallel and Scientific Computing Laboratory National Yang Ming Chiao Tung University Hsinchu300093 Taiwan Electrical Engineering and Computer Science International Graduate Program National Yang Ming Chiao Tung University Hsinchu300093 Taiwan Department of Electrical Engineering National Cheng Kung University Tainan City701401 Taiwan Institute of Pioneer Semiconductor Innovation Industry Academic Innovation School National Yang Ming Chiao Tung University Hsinchu300093 Taiwan Department of Electronics and Electrical Engineering National Yang Ming Chiao Tung University Hsinchu300093 Taiwan Institute of Communications Engineering National Yang Ming Chiao Tung University Hsinchu300093 Taiwan

Amorphous indium gallium zinc oxide (a-IGZO)-based thin film transistors (TFTs) are increasingly becoming popular because of their potential in futuristic applications, including CMOS technology. Given the demand for CMOS-compatible, ultra-scaled, reliable, and high-performing devices, we fabricate and analyze scaled-channel a-IGZO-TFTs with an optimal double-gate structure, a thin nanosheet-based channel, and an effective high- κ dielectric namely HfO2. The reliably reported double gate IGZO nanosheet TFTs (DG-IGZO-NS-TFTs) are tested under positive and negative bias stress at variant temperatures, and the resulting modulations are analyzed critically. The reported DG-IGZO-NSTFTs exhibit a negative side threshold voltage shift (Δ Vth) accompanied by an increase in Ion/Ion(0) under negative bias temperature stress (NBTS) at elevated temperatures, which indicates the presence of additional charges. An anomalous negative side shifting of the Vth is observed under positive bias temperature stress (PBTS), where diffused hydrogen atoms are identified as introducing excess n-type carriers into the channel and causing the observed Δ Vth. The spectroscopic analysis is performed to establish evidence for the assumed mechanisms, and the role of individual gates is investigated in the context of performance variance under temperature-bias stress. Moreover, the partial reversibility of the stress-induced degradation is experimentally established and methodically discussed. Overall, the reported results offer a comprehensive understanding of scaled-channel DG-NS-IGZO-TFTs, which help shape performance-enhancement strategies, control degradation mechanisms, and define appropriate application scenarios. © 2013 IEEE.

关键词： Thin film transistors

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Reachability Analysis of Nonlinear Discrete-Time Systems Using Polyhedral Relaxations and Constrained Zonotopes 63

Reachability Analysis of Nonlinear Discrete-Time Systems Usi...

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63rd IEEE Conference on Decision and Control, CDC 2024

作者： Rego, Brenner S. Raffo, Guilherme V. Terra, Marco H. Scott, Joseph K. Georgia Institute of Technology Department of Chemical and Biomolecular Engineering 311 Ferst Dr. AtlantaGA30318 United States University of Säo Paulo Department of Electrical and Computer Engineering SP Säo Carlos13566-590 Brazil Federal University of Minas Gerais Department of Electronics Engineering and the Graduate Program in Electrical Engineering MG Belo Horizonte31270-901 Brazil

ISBN: (纸本)9798350316339

This paper presents a novel algorithm for reachability analysis of nonlinear discrete-time systems. The proposed method combines constrained zonotopes (CZs) with polyhedral relaxations of factorable representations of nonlinear functions to propagate CZs through nonlinear functions, which is normally done using conservative linearization techniques. The new propagation method provides better approximations than those resulting from linearization procedures, leading to significant improvements in the computation of reachable sets in comparison to other CZ methods from the literature. Numerical examples highlight the advantages of the proposed algorithm. © 2024 IEEE.

关键词： Numerical methods

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IoT-Enabled Deep Learning Algorithm for Estimation of State-of-Charge of Lithium-ion Batteries∗

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Journal of Circuits, Systems and Computers 2024年第7期33卷 2450134-2450134页

作者： Pushpavanam, B. Kalyani, S. Prasanna, M. Arul Sangaiah, Arun Kumar Department of Electrical and Electronics Engineering PSNA College of Engineering and Technology Dindigul India Kamaraj College of Engineering and Technology Madurai India Department of Electrical and Electronics Engineering Kamaraj College of Engineering and Technology Madurai India International Graduate Institute of AI National Yunlin University of Science and Technology Taiwan Department of Electrical and Computer Engineering Lebanese American University Byblos Lebanon

Battery Management System (BMS) functions to monitor individual cell in a battery pack and its crucial task is to maintain stability throughout the battery pack. The BMS is responsible for maintaining the safety of the battery as well as not to harm the user or environment. The parameters that are to be monitored in a battery are Voltage, Current and Temperature. With the collected data, BMS carefully monitors the charging-discharging behavior of the battery particularly in the Lithium-ion (Li-ion) batteries in which charging and discharging behavior are completely different. This paper proposes a real-time IOT connected deep learning algorithm for estimation of State-of-Charge (SoC) of Li-ion batteries. This paper provides unique objectives and congruence between model-based conventional methods and state-of-the-art deep learning algorithm, specifically Feed Forward Neural Network (FNN) which is nonRecurrent. This paper also highlights the advantages of Internet-of-Things (IoT) connected deep learning algorithm for estimation of State-of-Charge of Li-ion batteries in Hybrid Electric Vehicles (HEVs) and Electric Vehicles (EVs). The major advantage of the proposed method is that the Artificial Intelligence (ai)-based techniques aim to bring the estimation error less than 2% at a low cost and time without the model of the battery, at par with conventional method of Extended Kalman Filter (EKF) which is the best ever practical estimation theory. Another advantage of the proposed method is that in an abnormal condition (i.e., Unsafe Temperature) the IF This Then That (IFTTT) IoT mobile application interfaced with BMS through ThingSpeak cloud, sends a notification alert to the battery expert or to the user prior to an emergency. Finally, the real-time data of the battery parameters are collected through ThingSpeak cloud platform for future research and analysis. © 2024 World Scientific. All rights reserved.

关键词： Battery management systems

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Enhancing the Performance of E-Mode AlGaN/GaN HEMTs With Recessed Gates Through Low-Damage Neutral Beam Etching and Post-Metallization Annealing

IEEE Open Journal of Nanotechnology

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IEEE Open Journal of Nanotechnology 2023年 4卷 150-155页

作者： Chen, Yi-Ho Ohori, Daisuke Aslam, Muhammad Lee, Yao-Jen Li, Yiming Samukawa, Seiji National Yang Ming Chiao Tung University Parallel and Scientific Computing Laboratory Graduate Degree Program of College of Electrical and Computer Engineering Hsinchu300093 Taiwan Tohoku University Institute of Fluid Science Sendai980-8577 Japan National Yang Ming Chiao Tung University Parallel and Scientific Computing Laboratory Electrical Engineering and Computer Science International Graduate Program Hsinchu300093 Taiwan National Yang Ming Chiao Tung University Institute of Pioneer Semiconductor Innovation Hsinchu300093 Taiwan National Yang Ming Chiao Tung University Parallel and Scientific Computing Laboratory Institute of Communications Engineering Institute of Biomedical Engineering Hsinchu300093 Taiwan National Yang Ming Chiao Tung University Department of Electronics and Electrical Engineering Hsinchu300093 Taiwan National Yang Ming Chiao Tung University Institute of Communications Engineering Hsinchu300093 Taiwan

This study investigated the electrical properties of AlGaN/GaN high-electron-mobility transistors (HEMTs) with varied recess depths under the gate electrode. We demonstrated a recess depth of approximately 6 nm, which was achieved through neutral beam etching (NBE) technique with a low etch rate of 1.8 nm/min, resulting in device enhancement-mode (E-mode) behavior with threshold voltage (Vth) of 0.49 V. The effects of post-metallization annealing (PMA) on the device performance were also examined. The results revealed that PMA treatment improves the DC characteristics of the devices, including maximum drain current (IDMAX), transconductance (gm), subthreshold swing (SS), on-off ratio, and off-state leakage current, with maximum enhancement percentage of 18.3% for IDMAX, 3758% for on-off ratio, and 54.3% for SS. Moreover, this study compared the recess depths of metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs) with the SiN dielectric layer. The results showed that MIS-HEMTs exhibit more negative Vth values, which can be attributed to the controlled surface states achieved through passivation. © 2020 IEEE.

关键词： Etching

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electrical Characteristic and Power Fluctuations of GAA Si NS CFETs by Simultaneously Considering Six Process Variation Factors

IEEE Open Journal of Nanotechnology

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IEEE Open Journal of Nanotechnology 2023年 4卷 229-238页

作者： Kola, Sekhar Reddy Li, Yiming National Yang Ming Chiao Tung University Parallel and Scientific Computing Laboratory Electrical Engineering and Computer Science International Graduate Program Hsinchu300093 Taiwan Parallel and Scientific Computing Laboratory National Yang Ming Chiao Tung University Hsinchu300093 Taiwan National Yang Ming Chiao Tung University Institute of Communications Engineering Hsinchu300093 Taiwan National Yang Ming Chiao Tung University Institute of Biomedical Engineering Hsinchu300093 Taiwan National Yang Ming Chiao Tung University Department of Electronics and Electrical Engineering Hsinchu300093 Taiwan

Characteristic variability induced by process variation effect (PVE) is one of technological challenges in semiconductor industry. In this work, we computationally study electrical characteristic and power fluctuations induced by six factors of PVE of the gate-all-around (GAA) silicon (Si) nanosheet (NS) complementary field-effect-transistors (CFETs) which are formed by vertically stacking n-FET on top of p-FET. Among the six factors, NS thickness (TNS), NS width (WNS), and gate length (LG) are identified as crucial factors contributing to large variations in device characteristics. The p-FET exhibits substantial off-state current fluctuation (about 151%) due to the bottom parasitic channel leakages. Compared with the magnitudes of dynamic and short circuit powers, the static power is marginal, but it possesses the largest fluctuation (up to 148%). If we assume that each factor of PVE has the same probability distribution as the others and all are mutually independent, the statistical sum of their power fluctuations will exhibit more than 50% overestimations, compared with the results when all factors are considered simultaneously. © 2020 IEEE.

关键词： III-V semiconductors

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Study on Electromagnetic Resonance Antennas in the Vicinity of Human Body

Study on Electromagnetic Resonance Antennas in the Vicinity ...

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2022 IEEE International Workshop on Electromagnetics: Applications and Student Innovation Competition, iWEM 2022

作者： Hiramoto, Toshiya Hirabayashi, Koichi Noguchi, Keisuke Kanazawa Institute of Technology Graduate Program in Electrical Engineering and Electronics Ishikawa Nonoichi Japan Fukuvi Chemical Industry Co Ltd Equipment Engineering Section Fukui Fukui City Japan Kanazawa Institute of Technology Depertment of Electrical and Electronic Engineering Ishikawa Nonoichi Japan

ISBN: (数字)9781665432382

ISBN: (纸本)9781665432382

In this study, we investigate a directional electromagnetic resonance antenna (EMRA) for application to wearable antennas. We designed an EMRA in free space and confirmed its unidirectional pattern through simulations and prototype experiments. We also analyze the characteristics of EMRA when it is in close to the surface of a human phantom. As a result, EMRA in the vicinity of human body resulted in a gain reduction of up to 2 dB compared to the free-space condition. However, when the distance from the surface of the human phantom was more than 10 mm, the gain was confirmed to be close to that in free space. © 2022 IEEE.

关键词： Phantoms

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Enhanced Efficiency in Fog Computing: A Fuzzy Data-Driven Machine Selection Strategy

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International Journal of Fuzzy Systems 2024年第1期26卷 368-389页

作者： Zavieh, Hadi Javadpour, Amir Ja’fari, Forough Sangaiah, Arun Kumar Slowik, Adam School of Economics and Statistics Guangzhou University Guangzhou510006 China Harbin Institute of Technology Shenzhen China Department of Computer Engineering Sharif University of Technology Tehran Iran International Graduate School of AI National Yunlin University of Science and Technology Douliu Taiwan Department of Electronics and Computer Science Koszalin University of Technology Koszalin Poland ADiT-Lab Electrotechnics and Telecommunications Department Instituto Politécnico de Viana do Castelo Porto4900–347 Portugal Department of Electrical and Computer Engineering Lebanese American University Byblos Lebanon

With the rapid proliferation of IoT and Cloud networks and the corresponding number of devices, handling incoming requests has become a significant challenge. Task scheduling problems have emerged as a common concern, necessitating the exploration of new methods for request management. This paper proposes a novel approach called the Fuzzy Inverse Markov Data Envelopment Analysis Process (FIMDEAP). Our method combines the strengths of the Fuzzy Inverse Data Envelopment Analysis (FIDEA) and Fuzzy Markov Decision Process (FMDP) techniques to enable the efficient selection of physical and virtual machines while operating in a fuzzy mode. We represent data as triangular fuzzy numbers and employ the alpha-cut method to solve the proposed models. The paper provides a mathematical optimization model for the proposed method and presents a numerical example for illustration. Furthermore, we evaluate the performance of our method in a cloud environment through simulations. The results demonstrate that our approach outperforms existing methods, namely PSO + ACO and FBPSO + FBACO, in terms of key metrics, including energy consumption, execution cost, response time, gain of cost, and makespan. © The Author(s) 2023.

关键词： Markov processes

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Study on Dual-band Antennas with a Modified Conical Antenna and a Parasitic Helical Element

Study on Dual-band Antennas with a Modified Conical Antenna ...

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2022 IEEE International Workshop on Electromagnetics: Applications and Student Innovation Competition, iWEM 2022

作者： Hirohara, Ryuji Fusazaki, Shinpei Noguchi, Keisuke Kanazawa Institute of Technology Graduate Program in Electrical Engineering and Electronics Ishikawa Nonoichi Japan DOCOMO CS Hokuriku Inc. Management Planning Section Network Management Department Ishikawa Kanazawa Japan

ISBN: (数字)9781665432382

ISBN: (纸本)9781665432382

With the start of the 5G operations, it will become more important to apply communication systems to automo-biles, which has been promoted in recent years as connected cars. Multi-band antennas are required to reduce the in-vehicle space which is occupied by communication equipment. We de-signed dual-band antennas for the sub-6 GHz 5G bands and the intelligent transport systems (ITS) especially the driving safety support system (DSSS) by loading helical elements to modified conical antennas (MCA), and conducted simulations and meas-urements. As a result, the antenna satisfied the sub-6 and ITS DSSS bands in the simulations. There were slightly differences between the calculated and measured results. © 2022 IEEE.

关键词： Intelligent systems

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Quality Improvements in the electrical Design of Typical DC-DC Electronic Power Converter for High-Voltage Applications 8

Quality Improvements in the Electrical Design of Typical DC-...

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8th International Conference on engineering and Emerging Technologies, ICEET 2022

作者： Recto, King Harold A. Escoto, Miguel T. Hernandez, Noel B. Ateneo de Manila University Department of Electronics Computer and Communications Engineering Quezon City Philippines Electrical and Electronics Engineering Institute University of the Philippines Diliman Quezon City Philippines Centro Escolar University Post-doctoral Program in Quality Management of the Graduate School Manila Philippines

ISBN: (纸本)9781665491068

The green transition has brought about a worldwide-shift to the use of renewables as alternative energy sources. Because of this, high voltage DC has been a field of interest in power electronics due to its capability in efficiently transmitting power to reach remote areas. Typical DC-DC electronic power converter design has the capability of boosting voltage level to a certain extent but not enough for high-voltage applications. Using the DMaiC Approach of the Six Sigma, quality improvements in the design was proposed to stabilize operating frequency, bring up the output voltage from 100 VDC to 4,000 VDC and provide at least 10% margin of error in the apparent power measured at the output side to offset inherent losses in the electrical design. These proposed quality improvements were sustained by designing a control circuit that would ensure the attainment of the parameters set in the Define Phase of the DMaiC Approach. The result of the study is a practical 12 VDC to 4,000 VDC boost converter design that has incorporated all the proposed quality improvements. © 2022 IEEE.

关键词： Six sigma

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An Efficient Provably Secure Identity-Based Authentication Technique for TMIS under a Smart City Environment

An Efficient Provably Secure Identity-Based Authentication T...

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2024 IEEE International Conference on Communications, Computing, Cybersecurity and Informatics, CCCI 2024

作者： Meshram, Chandrashekhar Obaidat, Mohammad S. Sadoun, Balqies Imoize, Agbotiname Lucky Studies and Research in Mathematics Jayawanti Haksar Government Post Graduate College Department of Post Graduation MP Betul460001 India University of Science and Technology Beijing Beijing100083 China SRM University SRM Nagar TN Kattankulathur603203 India Amity University UP Noida201301 India College of Engineering Al-Balqa Applied University AI-Salt Jordan University of Lagos Faculty of Engineering Department of Electrical and Electronics Engineering Akoka Lagos100213 Nigeria Institute of Digital Communication Ruhr University Department of Electrical Engineering and Information Technology Bochum44801 Germany

ISBN: (纸本)9798350349832

The advent of the Internet of Things (loT) heralds a trans formative era for electronic healthcare systems in smart environments, enabling remote healthcare delivery for individuals with special medical needs through smart home technologies. These smart homes are fitted with specialized electronic devices that automate healthcare delivery, enhancing patient safety and enabling real-Time health monitoring. Central to this system is a local intelligence unit that processes sensed data, identifies critical conditions, and facilitates communication between patients and healthcare providers. The integration of telemedicine and telecare into smart homes has led to the development of Telecare Medicine Information Systems (TMIS), further advancing remote healthcare services. However, TMIS faces significant security challenges, particularly in protecting sensitive user data transmitted over public networks. To overcome these vulnerabilities, identity-based authentication techniques based on extended chaotic maps have been proposed, though they often fall short of advanced security threats. This study introduces an innovative identity-based authentication scheme, leveraging an extended Chebyshev chaotic map within a smart city context, tailored for use in multi-server environments without trusted server relationships. The proposed scheme eliminates the need for a registration center and requires users to maintain only a single password for accessing multiple TMIS servers, offering enhanced security features and reduced computational overhead. The security and efficiency of the proposed scheme are substantiated through formal proof in the random oracle model, marking a significant advancement in secure remote healthcare delivery. © 2024 IEEE.

关键词： Smart homes

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