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Localization of Distributed Fiber Sensor Employing a Sub-Ring

Journal of Electronic science and Technology of China 2008年第4期6卷 377-380页

作者： Wei-Min Chen Yuan-Yuan Xie Peng Zhang Lei Lin School of Optical Electronical Engineering Chongqing University Chongqing 400044China School of Computer Science and InformationEngineering Chongqing Technology and Business University Chongqing400067 China

A simple distributed optical fiber sensing system used to monitor vibration signal has an additional sub-loop eoupled with main ring by a 3 dB coupler. This paper compares three outputting interfered beams, each of them travels in the sub-ring 0, 1, 2 times, separately. Using the simultaneous equations produced by those three outputs, we find the relation between the interference lights and vibration signal＇s characteristics, such as frequency, amplitude and position. Through simplifying and calculating, the vibration position can be obtained finally.

关键词： Distributed fiber interference,localization sensor vibration.

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Temperature dependence analysis of photonic devices

Temperature dependence analysis of photonic devices

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Integrated Photonics and Nanophotonics Research and Applications, IPNRA 2008

作者： Rodríguez-Esquerre, V.F. Da Silva, J.P. Rubio-Mercedes, C.E. Isídio-Lima, J.J. Hernández-Figueroa, H.E. Department of Electrical and Electronical Technology DTEE Federal Center of Technological Education of Bahia CEFET-BA Brazil Environmental Science Department UFERSA Mossoró/RN Brazil Course of Mathematics State University of Mato Grosso do Sul UEMS Brazil Department of Microwave and Optics School of Electrical and Computer Engineering University of Campinas Brazil

The chromatic-dispersion of an ultra-flattened optical fiber and the resonant-wavelength of a microring-filter were computed for several temperatures by using temperature-dependent Sellmeier coefficients in combination with efficient finite-element approaches. Both parameters exhibited linear-dependence with temperature. © 2008 Optical Society of America.

关键词： Chromatic dispersion

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Electrothermal coupling and threshold-switching simulation study on phase change memory (PCM) Cell

Electrothermal coupling and threshold-switching simulation s...

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International Conference on Solid-State and Integrated Circuit Technology

作者： Yiqun Wei Chi Liu Xinnan Lin Jin He Xing Zhang Mansun Chan Micro-& Nano Electric Device and Integrated Technology Group The Key Laboratory of Integrated Microsystems Shenzhen Graduate School of Peking University Shenzhen China Department of Electronical and Computer Engineering Hong Kong University of Science and Technology Kowloon Hong Kong China

ISBN: (纸本)9781424421855

As one of the candidates of the next generation non-volatile memory (NVM), phase change memory(PCM) has been paid more attention. But there are many open issue in simulation and phase-change mechanism. In this work, an electrothermal simulation is implemented, which can provide an evaluation method for PCM geometry and scaling design. At the time, a threshold-switching mechanism is discussed. A threshold-switching curve is achieved using device simulator, results show that this mechanism can explain the threshold-switching phenomenon.

关键词： Electrothermal effects Phase change memory Phase change materials Temperature Switches Nonvolatile memory Geometry Amorphous materials Crystallization Equations

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Generic Carrier-Based Core Model for Four-Terminal Double-Gate MOSFET Valid for Symmetric, Asymmetric, SOI, and Independent Gate Operation Modes

Generic Carrier-Based Core Model for Four-Terminal Double-Ga...

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Ninth International Symposium on Quality Electronic Design (ISQED 2008)

作者： Feng Liu Jin He Yue Fu Jinhua Hu Wei Bian Yan Song Xing Zhang Mansun Chan School of Computer and Information Engineering Shenzhen Graduate School Peking University Beijing China Peking University Beijing Beijing CN Peking University Beijing China The Hub of Multiple-Project-Wafer Peking University Beijing China School of Computer and Information Engineering Shenzhen Graduate School Peking University Shenzhen China Department of Electronical and Computer Engineering Hong Kong University of Science and Technology Kowloon Hong Kong China

A generic carrier-based core model for undoped four-terminal double-gate (DG) MOSFET valid for symmetric, asymmetric, SOI, and independent gate operation modes is presented in this paper. Based on the exact solution of the 1-D Poisson's equation of a general DG-MOSFET configure, a generic drain current model is derived from Pao-Sah's double integral in terms of the carrier concentration. The model is verified by extensive comparisons with 2-D numerical simulations under different bias conditions to all four terminals. The concise mathematic formulation allows the unification various double-gate models into a carrier-based core model for compact DG-MOSFET model development.

关键词： MOSFET circuits Design engineering Poisson equations Mathematical model Semiconductor device modeling Information analysis Integral equations Numerical simulation Silicon Microelectronics

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Electrothermal Coupling and Threshold-switching Simulation Study on Phase Change Memory (PCM) Cell

Electrothermal Coupling and Threshold-switching Simulation S...

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2008 9th International Conference on Solid-State and Integrated-Circuit Technology

作者： Yiqun Wei Chi Liu Xinnan Lin Jin He Xing Zhang Mansun Chan Micro- & Nano Electric Device and Integrated Technology Group The Key Laboratory of Integrated MicrosystemsShenzhen Graduate School of Peking University Department of Electronical and Computer Engineering Hong Kong University of Science and TechnologyClearwater BayKowloonHong KongP.R.China

As one of the candidates of the next generation non-volatile memory(NVM),phase change memory(PCM) has been paid more *** there are many open issue in simulation and phase-change *** this work,an electrothermal simulation is implemented,which can provide an evaluation method for PCM geometry and scaling *** the time,a threshold-switching mechanism is discussed.A threshold-switching curve is achieved using device simulator,results show that this mechanism can explain the threshold-switching phenomenon.

关键词： PCM Electrothermal Threshold-switching Simulation

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Plasma etching technology for low-k porous SiOCH films

Plasma etching technology for low-k porous SiOCH films

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Symposium on Silicon Nitride, Silicon Dioxide Thin Insulating Films, and Emerging Dielectrics - 211th ECS Meeting

作者： Hori, M. Department of Electronical Engineering and Computer Science Nagoya University Nagoya 464-8603 Japan

ISBN: (纸本)9781566775526

An environmental friendly gas, C5F10O, has been proposed for etching low-k SiOCH films using dual frequency (60MHz/2MHz) capacitively coupled plasma. The main ion produced is CF3+, as compared to CF+ produced by the conventional c-C4F8 gas. The advantage of CF3+ over CF+ is the much higher etching rate. With the new etching gas, a high etching rate of about 1000 nm/min with a vertical profile pattern can be achieved. The damage to SiOCH films induced by light, radicals and ions were systematically evaluated. It was found that the most severe damage was caused by ions, followed by VUV. The resist materials can be selectively removed with respect to SiOCH with less damage by employing an O2/Ar surface wave excited plasma. An advanced plasma etching technology with controlled radicals has thus been introduced. © The Electrochemical Society.

关键词： Silicon compounds

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MemScroll: Dynamic memory errors detector in C programs

MemScroll: Dynamic memory errors detector in C programs

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31st Annual International computer Software and Applications Conference, COMPSAC 2007

作者： Cho, Dae Wan Oh, Seunguk Kim, Hyeon Soo Dept. of Computer Science and Engineering Chungnam Nat'l Univ. 220 Gung-dong Yuseong-gu Daejeon Korea Republic of Div. of Computer Science Dept. of Electronical Eng. and Computer Sc KAIST 373-1 Guseong-dong Yuseong-gu Daejeon Korea Republic of

ISBN: (纸本)9780769528700

Memory access errors are frequently occurred in computer programs written in C language. Such memory errors are one of the principal reasons for failures of C programs. Accordingly, a number of research works have suggested various techniques to detect them automatically. However, existing techniques have one or more of the following problems: inability to detect all memory errors, changing the memory allocation mechanism, incompatibility with libraries, and excessive performance overheads. To cope with these problems, in this paper we suggest a new and automated tool to detect dynamic memory access errors in C programs. The primary goal of our approach is to present a tool with high precision, better performance, and the relatively low space overheads. © 2007 IEEE.

关键词： computer programming

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MemScroll: Dynamic Memory Errors Detector in C Programs

MemScroll: Dynamic Memory Errors Detector in C Programs

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IEEE Annual International computer Software and Applications Conference (COMPSAC)

作者： Dae Wan Cho Seunguk Oh Hyeon Soo Kim Department of Computer Science and Engineering Chungnam National University Daejeon South Korea Division of Computer Science Department of Electronical Eng. and Computer Sc. KAIST Daejeon South Korea

关键词： Detectors computer errors Runtime Instruments Arithmetic computer science Software libraries Read-write memory computer languages Control systems

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Adaptive step length estimation with awareness of sensor equipped location for PNS

Adaptive step length estimation with awareness of sensor equ...

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20th International Technical Meeting of the Satellite Division of The Institute of Navigation 2007 ION GNSS 2007

作者： Park, C.G. Shin, S.H. Hong, H.S. Park, J.G. Seoul National University Korea Republic of Samsung Electronics Co. Ltd. Korea Republic of Kyungpook National University Korea Republic of School of Mechanical and Aerospace Engineering Seoul National University Korea Republic of IEEE AES Korean Society Korea Republic of School of Mechanical and Aerospace Engineering Seoul National University Korea Republic of Samsung Electronics Co. Ltd. Korea Republic of School of Electronical Engineering Department of Computer Science Kyungpook National University Daegu Korea Republic of

ISBN: (纸本)9781605600697

In this paper we present an adaptive step length estimation algorithm with the awareness of the inertial measurement unit (IMU) location for pedestrian dead reckoning (PDR). The developed PDR is assumed to be embedded in mobile devices. Thus it is supposed that the IMU can be equipped on two locations;on a waist belt or in a trouser pocket of the pedestrian. In this paper the step length is estimated by a simple linear combination of a constant, walking frequency and acceleration variance. It is investigated that the step length estimation parameters should be changed if PDR is equipped on different parts of the human body. Otherwise it can cause considerable error in the step length estimation. In order to enhance the performance of the step length estimation algorithm, we present to adaptively estimate the step length according to the PDR equipped location. And then the walking distance of the user is calculated in real-time. The performance of the proposed algorithm is verified through the actual walking tests.

关键词： Location

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Genetic network programming for artificial stock market

Genetic network programming for artificial stock market

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2006 International Conference on Communications, Circuits and Systems, ICCCAS

作者： Cheng, Yang Shixin, Sun Zhilong, Xie School of Computer Science and Engineering University of Electronic Science and Technology of China Chengdu China School of Electronical Commerce Southwestern University of Finance and Economics Chengdu China

ISBN: (纸本)0780395840

Combined with the idea of Austrian school of economics, this paper proposes a new multi-agent model for artificial stock market based on Genetic Network Programming. It focuses on applying the GNP approach to emulate investment behavior of agents and evolve their trading rules. Simultaneously, this model enhances the heterogeneity of agents, and searches for an optimal combination of parameter values based on GA. Simulation results confirm the effectiveness of this GNP-ASM model through comparison with empirical statistics. © 2006 IEEE.

关键词： computer programming

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