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Global Energy Conference (GEC)

作者： Bekir Geçer Öztürk Tosun N. Füsun Oyman Serteller Alper Nabi Akpolat Gülten Kaşoğlu Mechatronics Program Atasehir Adiguzel Vocational School Istanbul Turkey Electrical-Electronic Engineering Marmara University Istanbul Turkey Electrical-Electronics Engineering Faculty of Technology Marmara University Istanbul Turkey Appied Mathematics Faculty of Sciences Marmara University Istanbul Turkey

ISBN: (数字)9798331532611

ISBN: (纸本)9798331532628

As electric vehicles become increasingly important and widely used, the design of every type of electric motor has gained significant attention in both literature and industry. This study provides a detailed analysis of the number of turns in the motor windings, a critical factor in electric motor design. Through comparative analysis, it investigates how wire size and slot filling factor affect the number of windings turns per pole in Switched Reluctance Motors (SRMs). In addition, the study evaluates the effect of the number of turns analysis on motor performance during design optimization using the genetic algorithm tool in Ansys and traditional calculation methods. The optimization was performed with the wire size range between 0.45 and 0.85 mm. As a result, the optimal value with 82% efficiency was obtained with a wire size of 0.81 mm and 312 turns. The lower copper losses, ideal volume, reduced costs, and enhanced efficiency are obtained by determining the optimal number of turns. This research contributes to developing more efficient and cost-effective electric motor designs. Future research could explore various and more effective optimization techniques and current parameters to design SRM and other motors.

关键词： Power system measurements Fill factor (solar cell) Density measurement Windings Switched reluctance motors Electric vehicles Filling Wire Optimization Electric motors

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Energy Material for Extreme Environment: Unveiling Novel Self-Resilience of Hf1-xZrxO2 for Electrostatic Energy Storage (EES) and Pyroelectric Energy Harvesting (PEH)

Energy Material for Extreme Environment: Unveiling Novel Sel...

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International Electron Devices Meeting (IEDM)

作者： C.-H. Liu K.-Y. Hsiang F.-S. Chang Y.-T. Chang C. W. Liu M. H. Lee Program for Semiconductor Devices Materials and Hetero-integration Graduate School of Advanced Technology National Taiwan University Taipei Taiwan Institute of Electronics National Yang Ming Chiao Tung University Hsinchu Taiwan Graduate Institute of Electronics Engineering National Taiwan University Taipei Taiwan

ISBN: (数字)9798350365429

ISBN: (纸本)9798350365436

The antiferroelectric (AFE) Hf02-based capacitor has been proposed as dual-functional for electrostatic energy storage and pyroelectric energy harvesting (PEH) for the first time. The partial-AFE (P-AFE) has a superior power and energy density capability of 1.46x10 10 W/kg and 0.96 Wh/kg, respectively, as compared with state-of-the-art capacitors and cell batteries. Furthermore, the harvestable energy density (HED) of P-AFE was experimentally measured at an outstanding 10.37 J/cm 3 within $\Delta \mathrm{T}=223\mathrm{K}$ (RT to 77K). The HfO 2 -based energy material is examined in low-temperature and X-ray irradiation and validates the degradation dominated by E-field cycling. The AFE capacitors inherently reflect the self-resilience effect and the physical mechanism of the fatigue and recovery are unveiled by VOs redistribution. There is great potential for utilizing benefits in energy storage and harvesting through the novel recovery strategy toward an unlimited lifetime of energy devices for extreme environments.

关键词： Radiation effects Temperature Density measurement Capacitors Electrostatic discharges Fatigue Iron Energy harvesting Electrostatics Energy storage

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technology Roadmap for Flexible Sensors

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ACS NANO 2023年第6期17卷 5211-5295页

作者： Luo, Yifei Abidian, Mohammad Reza Ahn, Jong-Hyun Akinwande, Deji Andrews, Anne M. Antonietti, Markus Bao, Zhenan Berggren, Magnus Berkey, Christopher A. Bettinger, Christopher John Chen, Jun Chen, Peng Cheng, Wenlong Cheng, Xu Choi, Seon-Jin Chortos, Alex Dagdeviren, Canan Dauskardt, Reinhold H. Di, Chong-an Dickey, Michael D. Duan, Xiangfeng Facchetti, Antonio Fan, Zhiyong Fang, Yin Feng, Jianyou Feng, Xue Gao, Huajian Gao, Wei Gong, Xiwen Guo, Chuan Fei Guo, Xiaojun Hartel, Martin C. He, Zihan Ho, John S. Hu, Youfan Huang, Qiyao Huang, Yu Huo, Fengwei Hussain, Muhammad M. Javey, Ali Jeong, Unyong Jiang, Chen Jiang, Xingyu Kang, Jiheong Karnaushenko, Daniil Khademhosseini, Ali Kim, Dae-Hyeong Kim, Il-Doo Kireev, Dmitry Kong, Lingxuan Lee, Chengkuo Lee, Nae-Eung Lee, Pooi See Lee, Tae-Woo Li, Fengyu Li, Jinxing Liang, Cuiyuan Lim, Chwee Teck Lin, Yuanjing Lipomi, Darren J. Liu, Jia Liu, Kai Liu, Nan Liu, Ren Liu, Yuxin Liu, Yuxuan Liu, Zhiyuan Liu, Zhuangjian Loh, Xian Jun Lu, Nanshu Lv, Zhisheng Magdassi, Shlomo Malliaras, George G. Matsuhisa, Naoji Nathan, Arokia Niu, Simiao Pan, Jieming Pang, Changhyun Pei, Qibing Peng, Huisheng Qi, Dianpeng Ren, Huaying Rogers, John A. Rowe, Aaron Schmidt, Oliver G. Sekitani, Tsuyoshi Seo, Dae-Gyo Shen, Guozhen Sheng, Xing Shi, Qiongfeng Someya, Takao Song, Yanlin Stavrinidou, Eleni Su, Meng Sun, Xuemei Takei, Kuniharu Tao, Xiao-Ming Tee, Benjamin C. K. Thean, Aaron Voon-Yew Trung, Tran Quang Wan, Changjin Wang, Huiliang Wang, Joseph Wang, Ming Wang, Sihong Wang, Ting Wang, Zhong Lin Weiss, Paul S. Wen, Hanqi Xu, Sheng Xu, Tailin Yan, Hongping Yan, Xuzhou Yang, Hui Yang, Le Yang, Shuaijian Yin, Lan Yu, Cunjiang Yu, Guihua Yu, Jing Yu, Shu-Hong Yu, Xinge Zamburg, Evgeny Zhang, Haixia Zhang, Xiangyu Zhang, Xiaosheng Zhang, Xueji Zhang, Yihui Zhang, Yu Zhao, Siyuan Zhao, Xuanhe Zheng, Yuanjin Zheng, Yu-Qing Zheng, Zijian Zhou, Tao Zhu, Bowen Zhu, Ming Zhu, Rong Zhu, Yangzhi Zhu, Yong Zou, Guijin Chen, Xiaodong 08-03 Innovis Singapore 138634 Republic of Singapore Innovative Centre for Flexible Devices (iFLEX) School of Materials Science and Engineering Nanyang Technological University Singapore 639798 Singapore Department of Biomedical Engineering University of Houston Houston Texas 77024 United States School of Electrical and Electronic Engineering Yonsei University Seoul 03722 Republic of Korea Department of Electrical and Computer Engineering The University of Texas at Austin Austin Texas 78712 United States Microelectronics Research Center The University of Texas at Austin Austin Texas 78758 United States Department of Chemistry and Biochemistry California NanoSystems Institute and Department of Psychiatry and Biobehavioral Sciences Semel Institute for Neuroscience and Human Behavior and Hatos Center for Neuropharmacology University of California Los Angeles Los Angeles California 90095 United States Colloid Chemistry Department Max Planck Institute of Colloids and Interfaces 14476 Potsdam Germany Department of Chemical Engineering Stanford University Stanford California 94305 United States Laboratory of Organic Electronics Department of Science and Technology Campus Norrköping Linköping University 83 Linköping Sweden Wallenberg Initiative Materials Science for Sustainability (WISE) and Wallenberg Wood Science Center (WWSC) SE-100 44 Stockholm Sweden Department of Materials Science and Engineering Stanford University Stanford California 94301 United States Department of Biomedical Engineering and Department of Materials Science and Engineering Carnegie Mellon University Pittsburgh Pennsylvania 15213 United States Department of Bioengineering University of California Los Angeles Los Angeles California 90095 United States School of Chemistry Chemical Engineering and Biotechnology Nanyang Technological University Singapore 637457 Singapore Nanobionics Group Department of Chemical and Biological Engineering Monash University Clayton Australia 3800 Monash

Humans rely increasingly on sensors to address grand challenges and to improve quality of life in the era of digitalization and big data. For ubiquitous sensing, flexible sensors are developed to overcome the limitations of conventional rigid counterparts. Despite rapid advancement in bench-side research over the last decade, the market adoption of flexible sensors remains limited. To ease and to expedite their deployment, here, we identify bottlenecks hindering the maturation of flexible sensors and propose promising solutions. We first analyze continued...challenges in achieving satisfactory sensing performance for real-world applications and then summarize issues in compatible sensor-biology interfaces, followed by brief discussions on powering and connecting sensor networks. Issues en route to commercialization and for sustainable growth of the sector are also analyzed, highlighting environmental concerns and emphasizing nontechnical issues such as business, regulatory, and ethical considerations. Additionally, we look at future intelligent flexible sensors. In proposing a comprehensive roadmap, we hope to steer research efforts towards common goals and to guide coordinated development strategies from disparate communities. Through such collaborative

关键词： soft materials mechanics engineering flexible electronics conformable sensors bioelectronics human-machine interfaces body area sensor networks technology translation sustainable electronics

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Low-loss, nonvolatile tuning of Bragg structures with Sb2Se3

Low-loss, nonvolatile tuning of Bragg structures with Sb2Se3

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2024 Conference on Lasers and Electro-Optics, CLEO 2024

作者： Nobile, Nicholas A. Lian, Chuanyu Sun, Hongyi Huang, Yi-Siou Mills, Brian Popescu, Cosmin Constantin Callahan, Dennis Hu, Juejun Ríos Ocampo, Carlos A. Youngblood, Nathan Electrical & Computer Engineering Department University of Pittsburgh PittsburghPA15213 United States Department of Materials Science & Engineering University of Maryland College ParkMD20742 United States Institute for Research in Electronics and Applied Physics University of Maryland College ParkMD20742 United States Department of Materials Science & Engineering Massachusetts Institute of Technology CambridgeMA02139 United States Draper Scholar Program The Charles Stark Draper Laboratory Inc CambridgeMA02139 United States The Charles Stark Draper Laboratory Inc CambridgeMA02139 United States

Sb2Se3 is used to switch between broadband transparency and enhanced index contrast in two device types leveraging Bragg gratings for tunable stop- and pass-band functionalities. Experimental results highlight fabrica... 详细信息

ISBN: (纸本)9781957171395

关键词： Fabry-Perot interferometers

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Local sampled-data gain-scheduling control of quasi-LPV systems 4th

Local sampled-data gain-scheduling control of quasi-LPV syst...

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4th IFAC Conference on Embedded Systems, Computational Intelligence and Telematics in Control CESCIT 2021

作者： Coutinho, Pedro H.S. Peixoto, Márcia L.C. Bernal, Miguel Nguyen, Anh-Tu Palhares, Reinaldo M. Federal University of Minas Gerais Graduate Program in Electrical Engineering Brazil Department of Electrical and Electronics Engineering Sonora Institute of Technology Mexico Université Polytechnique Hauts-de-France LAMIH UMR CNRS 8201 France Federal University of Minas Gerais Department of Electronics Engineering Brazil

This paper deals with the problem of sampled-data gain-scheduling control design for affine quasi-LPV systems. As the control implementation is based on sample-data and its update occurs only at specific sampling instants, the state-dependent scheduling functions of the controller are piecewise continuous. This characteristic causes a mismatch between the system model and the controller parameters, namely asynchronous scheduling functions of the controller with respect to the plant during the inter-sampling behavior. To cope with this phenomenon, a polytopic description of the inter-sampling is constructed based on bounding assumptions on the scheduling functions and their time derivatives. Then, regarding a time-delay approach, a constructive and numerically implementable LMI-based synthesis condition is derived, and a convex procedure is proposed for enlarging the estimate of the region of attraction of the origin of the closed-loop system. The time-derivative bounds of the scheduling functions are explicitly accounted into the local analysis to ensure the method's implementation. A numerical example is provided to illustrate the proposed methodology. Copyright © 2021 The Authors. This is an open access article under the CC BY-NC-ND license (https://***/licenses/by-nc-nd/4.0/)

关键词： Controllers

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Cryogenic Endurance of Anti-ferroelectric and Ferroelectric $\text{Hf}_{1-\mathrm{x}}\text{Zr}_{\mathrm{X}}\mathrm{O}_{2}$ for Quantum Computing Applications

Cryogenic Endurance of Anti-ferroelectric and Ferroelectric ...

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Annual International Symposium on Reliability Physics

作者： K.-Y. Hsiang J.-Y. Lee Z.-F. Lou F.-S. Chang Z.-X. Li C. W. Liu T.-H. Hou P. Su M. H. Lee Institute and Undergraduate Program of Electro-Optical Engineering National Taiwan Normal University Taipei Taiwan Department of Electronics Engineering and Institute of Electronics National Yang Ming Chiao Tung University Hsinchu Taiwan Graduate School of Advance Technology National Taiwan University Taipei Taiwan

The classical memory device with cryogenic operation is in high demanded for quantum information processing. The cryogenic endurance of anti-ferroelectric (AFE) and ferroelectric (FE) $\text{Hf}_{1-\mathrm{x}}\text{Zr}_{\mathrm{x}}\mathrm{O}_{2}$ capacitors is investigated for $\sim 10^{10}$ cycles (80 K). Moreover, the AFE capacitor exhibits a high speed response with ~ 80% normalized switching $2\mathrm{P}_{\mathrm{r},\text{sw}}$ for $\mathrm{t}_{\mathrm{p}}= 1\ \mu\mathrm{s}$ compared to ~ 60% for the FE capacitor at 80 K.

关键词： Temperature Quantum computing Capacitors Morphology Cryogenics Switches Information processing

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Design of a Multilingual Translation System with Personalized Voice Characteristics

Design of a Multilingual Translation System with Personalize...

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International SoC Design Conference, ISOCC

作者： Chen-Hua Chen Guan-Yu Lai Chuan Lee Chang-Yu Wu Kuan-Lin Liu Shin-Chi Lai Doctoral Degree Program in Smart Industry Technology Research and Development Huwei Taiwan Dept. of Automation Engineering National Formosa University Huwei Taiwan Dept. Electronics Engineering National Yunlin University of Science and Technology Douliu Taiwan Dept. Automation Engineering & Smart Machinery and Intelligent Manufacturing Research Center National Formosa University Huwei Taiwan

ISBN: (数字)9798350377088

ISBN: (纸本)9798350377095

This study combines AI voice synthesis with IoT to create a real-time multilingual translation system. Front-end devices capture the speaker's voice, which is then played back in both original and translated forms, enabling consecutive interpreting. This system is ideal for multilingual scenarios. After digitization, audio signals undergo speech-to-text conversion, multilingual translation, and text-to-speech processing. Speech synthesis matches the speaker's voice characteristics, allowing listeners to hear the translation in the speaker's voice. Both voice-to-text conversion and translated audio playback use Wi-Fi for data transmission, facilitating future applications. In validation, the average translation and transmission time for each speech segment were 410 ms and 3.38 s, respectively. The synthesized voice similarity analysis achieved an accuracy of 88%, showcasing the method's potential for system integration and development.

关键词： Accuracy System integration Real-time systems Text to speech Data communication Artificial intelligence Wireless fidelity Speech to text

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3D Stackable Vertical Ferroelectric Tunneling Junction (V-FTJ) with on/off Ratio 1500x, Applicable Cell Current, Self-Rectifying Ratio 1000x, Robust Endurance of 10⁹ Cycles, Multilevel and Demonstrated Macro Operation Toward High-Density BEOL NVMs

3D Stackable Vertical Ferroelectric Tunneling Junction (V-FT...

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Symposium on VLSI technology

作者： J.-Y. Lee F.-S. Chang K.-Y. Hsiang P.-H. Chen Z.-F. Luo Z.-X. Li J.-H. Tsai C. W. Liu M. H. Lee Institute and Undergraduate Program of Electro-Optical Engineering National Taiwan Normal University Taiwan Graduate School of Advance Technology National Taiwan University Taiwan Department of Electronics Engineering Institute of Electronics National Yang Ming Chiao Tung University Taiwan Department of Electrical Engineering National Taiwan Normal University Taiwan

A 1500x I LRS /I HRS with a high cell current of ~100 nA/ cell (J = 83 A/cm 2 ) is achieved by antiferroelectric (AFE) vertical ferroelectric tunnel junctions (V-FTJs) that demonstrates multilevel, a self-rectifying rate > 1000x, and macro operation. The stackable 3 D architecture integrating multiple layers of AFE V-FTJs with contact optimization further increases memory density. Robust endurance > 10 9 cycles at |4V| and stable nonvolatile data retention > 10 4 sec with extrapolation to 10 years are achieved. The proposed cell contact V-FTJ by AFE is a promising pathway toward BEOL NVMs by a NAND/NOR-based framework.

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End-to-End Reinforcement Learning for Torque Based Variable Height Hopping

arXiv

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arXiv 2023年

作者： Soni, Raghav Harnack, Daniel Isermann, Hauke Fushimi, Sotaro Kumar, Shivesh Kirchner, Frank Department of Electronics Engineering Indian Institute of Technology Banaras Hindu University Varanasi India DFKI GmbH Robotics Innovation Center Bremen Germany Undergraduate Course Program of Mechanical and Systems Engineering Kyoto University Kyoto Japan

Legged locomotion is arguably the most suited and versatile mode to deal with natural or unstructured terrains. Intensive research into dynamic walking and running controllers has recently yielded great advances, both in the optimal control and reinforcement learning (RL) literature. Hopping is a challenging dynamic task involving a flight phase and has the potential to increase the traversability of legged robots. Model based control for hopping typically relies on accurate detection of different jump phases, such as lift-off or touch down, and using different controllers for each phase. In this paper, we present a end-to-end RL based torque controller that learns to implicitly detect the relevant jump phases, removing the need to provide manual heuristics for state detection. We also extend a method for simulation to reality transfer of the learned controller to contact rich dynamic tasks, resulting in successful deployment on the robot after training without parameter tuning. © 2023, CC BY-NC-SA.

关键词： Reinforcement learning

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Impact of High-k Materials and Tube Numbers on CNFET Gate’s Performances

Impact of High-k Materials and Tube Numbers on CNFET Gate’s...

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International Conference on Smart Systems and Inventive technology (ICSSIT)

作者： Christofer Yalung Doldet Tantraviwat Sermsak Uatrongjit Wittawat Yamwong Philosophy Program in Nanoscience and Nanotechnology (International Program/Interdisciplinary) Chiang Mai University Chiang Mai Thailand Department of Electrical Engineering Faculty of Engineering Chiang Mai University Chiang Mai Thailand Thai Microelectronics Center (TMEC) National Electronics and Computer Technology Center (NECTEC) Chachoengsao Thailand

Carbon nanotube field effect transistor (CNFET) performance is primarily influenced by a variety of characteristics, such as nanotube diameter, operating voltage, pitch, the number of tubes, dielectric constant, and contact materials. In this study, the dielectric constant and the number of carbon nanotubes (CNTs) were emphasized to analyze the propagation delay and average power dissipation of basic logic gates. Zirconium dioxide (ZrO 2 ), hafnium oxide (HfO 2 ), and silicon dioxide (SiO 2 ) were used as dielectric materials. In this experiment, the Stanford CNFET model was utilized, and variable factors such as the number of CNTs and the dielectric constant $(K_{ox})$ accumulated on the nanotube gate's surface were diversified. The correlation coefficients of the delay, the average power, and the CNT numbers were also presented. Furthermore, the multi-objective genetic algorithm and the Rmethod were utilized to find the optimal K ox and the number of CNTs for minimizing the average dissipation power and the propagation delay of some logic gates designed with CNFET. For all the gates considered, the optimal number of CNTs is 4 while the dielectric constant is within the ranges of 19 to 24.

关键词： Silicon compounds Dielectric constant Correlation Logic gates CNTFETs Power dissipation Electron tubes

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