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Telecommunications Conference (ITC-Egypt), International

作者： Adnan Zahran Youssif Ayman Aly Angie R. Eldamak Dalia N. Elsheakh Electronics and Communication Systems Engineering Program Faculty of engineering Ain Shams University Cairo Egypt Electronics and Communication Systems Engineering Dept. Faculty of engineering Ain Shams University Cairo Egypt Electrical Dept. Faculty of Engineering and Technology Badr University in Cairo Badr City Cairo Egypt

ISBN: (数字)9798350351408

ISBN: (纸本)9798350351415

This paper presents a novel approach for noninvasive glucose monitoring using a Compact Complementary Split Ring Resonator (CCSRR) based sensor. The sensor design is initially simulated using High-Frequency Structure Simulator (HFSS) software, and then experimental validation is done. We carried out simulations with and without a finger phantom model to closely resemble conditions in real situations. The sensor exhibits high sensitivity and accuracy in detecting glucose concentrations within blood samples. Vector Network Analyzer was used along with the sensor to validate the simulation results. The results demonstrate close agreement between simulation and experimental data, affirming the effectiveness of the proposed sensor design for non-invasive glucose monitoring.

关键词： Sensitivity Split ring resonators Fingers Phantoms Network analyzers Vectors Glucose

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Corrugated Quad-Ridged Dual-Polarized Wideband Horn Antenna For mm-Wave Applications

Corrugated Quad-Ridged Dual-Polarized Wideband Horn Antenna ...

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National Conference on Radio Science (NSRC)

作者： Mohamed N. Salem Mohamed I. Ahmed Amr H. Hussein Department of Electronics and communication Engineering Institute of Aviation Engineering and Technology (IAET) Giza Egypt Microstrip department Electronics Research Institute El-Nuzha Cairo Electronics and Communication Program Faculty of Engineering Egypt University of informatics New Administrative Capital Knowledge City Egypt Electronics and Electrical Communications Engineering Dept. Faculty of Engineering Tanta University Tanta Egypt Electronics and Electrical Communications Engineering Department Faculty of Engineering Horus University Egypt New Damietta Egypt

This paper showcases the development of a wideband Dual-polarized horn antenna for mm-wave applications. It can be used for reflector feeding, imaging, satellite communication and power transmission due to its enhanced parameters. The working bandwidth is 10 GHz from 4 GHz to 14 GHz (VSWR $\lt1.9)$. This design is formed of three parts: 1) the waveguide is designed to support the entire bandwidth and to improve the impedance matching 2) four ridges to enable Dual-polarized antenna 3) the flared part is corrugated to enhance the side lobe level (SLL). The insertion between the two ports is less than -25 dB for most frequencies. The SLL is less than -25 dB for the low frequencies and -30 dB for the high frequencies. The co- and cross-pol radiation pattern simulation shows that the cross-pol magnitude is 20-30 dB less than the co-pol magnitude. These results have been proved using the CST MWS and Ansys HFSS software.

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A Novel Blockchain-Based Strategy for Energy Conservation in Cognitive Wireless Sensor Networks 4

A Novel Blockchain-Based Strategy for Energy Conservation in...

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4th International Conference on Blockchain Technology and Information Security, ICBCTIS 2024

作者： Sharma, Khemraj Goyal, Rohit Bhagat, Sukesh Kumar Agarwal, Sheenu Bisht, Girish Singh Hussien, Mohemmed Nanhua University Department of Business Administration Doctoral Program in Management Sciences Dalin62248 Taiwan School of Engineering and Computing Dev Bhoomi Uttarakhand University Dehradun India Uttaranchal University Department of Computer Science & Engineering Dehradun India Uttarakhand Technical University Department of Electronics and Communication Engineering Dehradun India Tula's Institute Dehradun India Department of Computer Science and Engineering Dehradun248001 India The Islamic University Najaf Iraq

ISBN: (纸本)9798331528324

Internet of Things (IoT) industrial applications have increased in internet-connected devices. As a result, accessibility, scalability, connectivity, and adaptability have become major challenges. It is possible to create connections between loT devices over the wireless medium, but efficiently utilizing scarce spectrum is the biggest concern. The paper proposes a novel method for selecting sensing nodes with the goal of reducing energy usage and increasing sensing efficiency. In order to ensure that node trust values conform to each other without any ambiguity, cryptography encrypts all information that relates to a node in a central node (CN). Nodes participating in CSS are selected based on their performance. Based on a comparison of various algorithms using varying numbers of nodes, the proposed algorithm achieves a 10% sensing efficiency. © 2024 IEEE.

关键词： Blockchain Network Network communication security Wireless Sensor

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Suppressing Ambipolar Conduction in Silicon DGTFET: Comparing Gate-to-Drain Overlapping/ Underlapping Structure

Suppressing Ambipolar Conduction in Silicon DGTFET: Comparin...

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2021 International Telecommunications Conference, ITC-Egypt 2021

作者： Elgamal, Muhammad Eliwy, Mahmoud Shaker, Ahmed Fedawy, Mostafa Zewail City of Science and Technology Communication and Information Engineering Program Giza Egypt Arab Academy for Science Technology and Maritime Transport Department of Electronics and Communication Cairo Egypt Ain Shams University Faculty of Engineering Department of Electronics and Communication Cairo Egypt

ISBN: (纸本)9781665445733

Silicon double gate tunneling field effect transistors, DGTFETs are suitable candidates for integration with current CMOS technology. Although their high ON/OFF current ratio and low subthreshold swing, they suffer from unwanted ambipolar conduction. In this work, a comparison of three TFET device structures is reported utilizing a TCAD simulator to determine the most suitable candidate that gives minimum ambipolarity and maximum cut off frequency. Insertion of low-k spacer above the drain region, using asymmetric gate electrode and using gate underlap with a lowk spacer below are compared in above terms. The merits of each design are shown and explained © 2021 IEEE.

关键词： Cutoff frequency

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Designing Classical Header Bits for Quantum Wrapper Networking with O-band Quantum Signal

Designing Classical Header Bits for Quantum Wrapper Networki...

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Frontiers in Optics + Laser Science 2023, FiO, LS 203: Part of Frontiers in Optics + Laser Science 2023

作者： Gül, G. Berkay On, M. Singh, S.K. Proietti, R. Kanter, G.S. Yoo, S.J.B. Kumar, P. Graduate Program in Applied Physics Northwestern University 2145 Sheridan Road EvanstonIL60208 United States Department of Electrical and Computer Engineering University of California Davis DavisCA95616 United States Department of Electronics and Communication Eng. Indian Institute of Technology Roorkee247667 India Department of Electronics and Telecommunications Engineering Politecnico di Torino Italy Center for Photonic Communication and Computing Dept. of Electrical and Computer Eng. Northwestern University EvanstonIL60208 United States

We investigate the impact of wavelength choice for the classical headers in quantum wrapper networking with O-band quantum payload. We show that a C-band header performs substantially better than an O-band header. ... 详细信息

ISBN: (纸本)9781957171296

关键词： Bandpass filters Beam splitters Bit error rate Entanglement distribution Quantum teleportation Raman scattering

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Designing Classical Header Bits for Quantum Wrapper Networking with O-band Quantum Signal

Designing Classical Header Bits for Quantum Wrapper Networki...

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2023 Laser Science, LS 2023

作者： Gül, G. On, M. Berkay Singh, S.K. Proietti, R. Kanter, G.S. Yoo, S.J.B. Kumar, P. Graduate Program in Applied Physics Northwestern University 2145 Sheridan Road EvanstonIL60208 United States Department of Electrical and Computer Engineering University of California Davis DavisCA95616 United States Department of Electronics and Communication Eng. Indian Institute of Technology Roorkee247667 India Department of Electronics and Telecommunications Engineering Politecnico di Torino Italy Center for Photonic Communication and Computing Dept. of Electrical and Computer Eng. Northwestern University EvanstonIL60208 United States

关键词： Quantum electronics

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The design and evaluation of an AR-based serious game to teach programming

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Computers and Graphics (Pergamon) 2022年 103卷 1-18页

作者： Sharma, Vandit Bhagat, Kaushal Kumar Huang, Huai-Hsuan Chen, Nian-Shing Department of Electronics and Electrical Communication Engineering Indian Institute of Technology Kharagpur Kharagpur721302 India Advanced Technology Development Centre Indian Institute of Technology Kharagpur Kharagpur721302 India Institute for Research Excellence in Learning Sciences Program of Learning Sciences National Taiwan Normal University Taiwan

The ubiquity of smartphone and tablet devices, combined with the increasing availability of serious games, has enabled students to learn various abstract concepts in an appealing and convenient manner. While several researchers have explored the use of Augmented Reality (AR) in serious games, many of these games have not been critically explained or evaluated. To that end, we employed game-based learning methodologies and Game Learning Analytics (GLA) to systematize the design and evaluation of an AR-based serious game to teach programming. We evaluated our game for usability and effectiveness by conducting a user study on twenty-seven undergraduate students. The evaluation primarily consisted of a learning test conducted twice – before and after playing the game – along with a usability questionnaire that players completed after playing the game. Our results showed that players made significant progress after playing the game. The game helped players improve their basic programming skills, especially for the group having lower prior programming skills. The results highlighted various ways in which GLA can be used to benefit different stakeholders in the game. Based on players’ qualitative responses, we also identified several areas of improvement, most prominently the trade-off between ease of use and game complexity. We provide suggestions and discuss implications for future work. © 2022 Elsevier Ltd

关键词： Serious games

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A Novel Hybrid Framework for Energy-Efficient Clustering and Routing in Heterogeneous IoT-Driven Wireless Sensor Networks 7

A Novel Hybrid Framework for Energy-Efficient Clustering and...

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7th International Conference on Contemporary Computing and Informatics, IC3I 2024

作者： Gupta, Gopal Kumar Jain, Arpit Sharma, Khemraj Ashok Kumar, P.M. Gupta, Shubhi Agarwal, Sheenu Nagpur Campus Pune440008 India Koneru Lakshmaiah Education Foundation Department of Computer Science Engineering AP Vaddeswaram522502 India Nanhua University Program in Management Sciences Department of Business Administration Dalin Chiayi62248 Taiwan Amity University Department of Computer Science and Engineering Uttar Pradesh Greater Noida India Uttarakhand Technical University Department of Electronics and Communication Engineering U.K. Dehradun India

ISBN: (纸本)9798350350067

Smart computing has been particularly notable in the development of wireless sensor networks (WSNs), which have many applications. Battery-powered, self-configuring sensor nodes are the basis of these networks. Energy and resources are limited when it comes to sensors. Unbalanced nodes in the network consume more power, which adversely affects the network's lifespan. An improved energy-efficient cluster-based routing protocol for heterogeneous wireless sensor networks (WSNs) based on the Internet of Things is proposed in this study. Several performance metrics were used to evaluate the proposed model's effectiveness, including energy efficiency, alive nodes, dead nodes, network lifetime, and residual energy. The results of the comparison were compared with existing methodologies, such as LEACH, PSO, and hybrid PSO. The proposed approach outperforms the existing model by a substantial margin in networks with 50 and 100 nodes, according to the simulation results. © 2024 IEEE.

关键词： Sensor nodes

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Sensory Perception of Haptic Rendering in Surgical Simulation 14

Sensory Perception of Haptic Rendering in Surgical Simulatio...

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14th International Conference on Computing communication and Networking Technologies, ICCCNT 2023

作者： Kaushik, Rohit Sachdeva, Rachit Vashisht, Chirag Choudhary, Krishan Kant University of Illinois Data Analytics Program Cs and Mathematics Department Springfield United States Dr. Akhilesh das Gupta Institute of Technology and Management Electronics and Communication Engineering Department New Delhi India Dr. Akhilesh das Gupta Institute of Technology and Management Information Technology and Engineering Department New Delhi India

ISBN: (纸本)9798350335095

The essential ideas behind haptic technology, including haptic interface and haptic rendering methods, as well as its application to surgical simulation, medical education, and other diverse topics, are presented in this paper. In empirical psychology and physiology, this refers to the sense of contact. The process of analyzing and developing capabilities in response to user interactions with virtual entities is elaborated as haptic rendering. Haptic may indicate haptic transmission, haptic perception, and haptic technology. Humans and other animals can respond to one another by using their feelings through haptic technology. Haptic perception is the process of recognizing objects through *** implies tactile response, which means it delivers feedback in the state of sensation as we may sense the material properties and motions of virtual objects devised by a computer. The use of haptic technology in the medical profession has proven extremely beneficial, and it has a wide range of applications in many different industries. Providing effective exchange via virtual reality helps to ease the surgeon's obligations. Amplify a person's experience in the virtual environment. The haptics ability ranges from computer graphics to psychophysics, cognitive science, and neurosciences. © 2023 IEEE.

关键词： Virtual reality

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The Impact of Hot Carrier Injection-Induced Device Degradation for Lower-Power FinFETs

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Journal of Electronic Materials 2023年第2期52卷 1391-1399页

作者： Chen, Yu-Lin Yeh, Wen-Kuan Hsu, Heng-Tung Chen, Ke-Horng Lien, Der-Hsien Lin, Wen-Chin Yu, Tien-Han Chiu, Yu-Sheng Godwinraj, D. Godfrey, D. Wu, Chien-Hung International College of Semiconductor Technology National Yang Ming Chiao Tung University Hsinchu Taiwan Graduate Degree Program of College of Electrical and Computer Engineering National Yang Ming Chiao Tung University Hsinchu Taiwan Institute of Electronics National Yang Ming Chiao Tung University Hsinchu Taiwan Institute of Microelectronics National Cheng Kung University Tainan Taiwan Department of ECE Amal Jyothi College of Engineering Kerala Kottayam India Department of Optoelectronics and Materials Engineering Chung Hua University Hsinchu Taiwan Department of Electronics and Communication Engineering Dayananda Sagar University Bengaluru India National Applied Research Laboratories Hsinchu Taiwan

The impact of hot carrier injection (HCI) on the performance of standard and low-VT FinFETs are investigated and benchmarked with each other. For this investigation, these FinFETs were fabricated with various gate lengths (L) from 16 to 36 nm. HCI-induced transconductance degradation in standard devices for gate length variations of 36 nm down to 16 nm was 75%, while it was 35% for low-VT devices. Similarly, the degradation of threshold voltage in standard devices for gate length variations of 36 nm down to 16 nm was 39%, while it was 36% for low-VT device. In this work, as the device is subject to HCI, we found that: (1) short-channel devices cause severe degradation on the threshold voltage and transconductance (gm) compared to long-channel devices, owing to the higher electric field for short-channel devices at the gate edge, (2) standard devices exhibit a more stable threshold voltage than that of low-VT power devices, since the TiN barrier layer prevents Al atom diffusion into the HfO2 layer, and (3) the transconductance efficiency of standard devices is better than that of low-VT power devices. Further, the lower-VT devices show lower transconductance degradation than standard devices. However, the transconductance degradation of the long-channel standard and low-VT devices are the same. Compared to short-channel low-VT devices, extended-channel standard devices are more immune to the HCI effect. © 2022, The Minerals, Metals & Materials Society.

关键词： Threshold voltage

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