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Latin America Congress on Computational Intelligence (LA-CCI)

作者： Vanessa Mendonça Mikael Santos Daniel M. Muñoz Carlos Humberto Llanos Department of Computer Science Federal Institute of Brasilia Department of Mechanical Engineering Mechatronics Graduate Program Department of Agronomy Federal Institute of Brasilia Faculty of Gama Electronics Engineering Undergraduate Program University of Brasilia Brasilia DF Brazil

ISBN: (数字)9798350374575

ISBN: (纸本)9798350374582

Technological advancements are increasingly evident across various sectors, including automobiles, industry, and healthcare. In precision agriculture, significant progress has been made, with AgroTICs and Smart Agriculture gaining substantial traction in the market. However, a gap remains between cutting-edge technology and family farming, presenting a challenge from both social and applied research perspectives. However, there is still a gap between cutting-edge technology and family farming, which creates a challenge from a social and applied research point of view. In this context, this paper proposes a monitoring model based on Fuzzy Logic and sensor automation applied to estimate the health of a corn crop. The proposed Fuzzy inference system involves calculating an indicator of nutrients as well as the average color and area of corn plants. The nutrient indicator is automatically computed by an ESP32 microcontroller using sensor readings, while the average color and area inputs are manually entered via a mobile application. Additionally, the Fuzzy inference is integrated into the ESP32. The model underwent experimental validation on the health of the plantation, and the results were evaluated in four areas: one was designated for testing, and three were for validation. The model achieved an accuracy of 97.5% in Scenario 3, categorized as ’Very Favorable’, and an accuracy of 65% in Scenarios 2 and 4, categorized as ‘Unfavorable’. The implications of this research contribute to the advancement of AgroTICs among small producers, with the potential to enhance and automate the monitoring of their harvest production.

关键词： Fuzzy logic Accuracy Computational modeling Plantations Crops Production Color Nutrients Monitoring Fuzzy systems

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Quality Improvements in the Electrical Design of Typical DC-DC Electronic Power Converter for High-Voltage Applications 8

Quality Improvements in the Electrical Design of Typical DC-...

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8th International Conference on engineering and Emerging Technologies, ICEET 2022

作者： Recto, King Harold A. Escoto, Miguel T. Hernandez, Noel B. Ateneo de Manila University Department of Electronics Computer and Communications Engineering Quezon City Philippines Electrical and Electronics Engineering Institute University of the Philippines Diliman Quezon City Philippines Centro Escolar University Post-doctoral Program in Quality Management of the Graduate School Manila Philippines

ISBN: (纸本)9781665491068

The green transition has brought about a worldwide-shift to the use of renewables as alternative energy sources. Because of this, high voltage DC has been a field of interest in power electronics due to its capability in efficiently transmitting power to reach remote areas. Typical DC-DC electronic power converter design has the capability of boosting voltage level to a certain extent but not enough for high-voltage applications. Using the DMAIC Approach of the Six Sigma, quality improvements in the design was proposed to stabilize operating frequency, bring up the output voltage from 100 VDC to 4,000 VDC and provide at least 10% margin of error in the apparent power measured at the output side to offset inherent losses in the electrical design. These proposed quality improvements were sustained by designing a control circuit that would ensure the attainment of the parameters set in the Define Phase of the DMAIC Approach. The result of the study is a practical 12 VDC to 4,000 VDC boost converter design that has incorporated all the proposed quality improvements. © 2022 IEEE.

关键词： Six sigma

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Hierarchical B-frame Video Coding Using Two-Layer CANF without Motion Coding

arXiv

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arXiv 2023年

作者： Alexandre, David Hang, Hsueh-Ming Peng, Wen-Hsiao Electrical Engineering and Computer Science International Graduate Program Institute of Electronics Department of Computer Science National Yang Ming Chiao Tung University Hsinchu Taiwan

Typical video compression systems consist of two main modules: motion coding and residual coding. This general architecture is adopted by classical coding schemes (such as international standards H.265 and H.266) and deep learning-based coding schemes. We propose a novel B-frame coding architecture based on two-layer Conditional Augmented Normalization Flows (CANF). It has the striking feature of not transmitting any motion information. Our proposed idea of video compression without motion coding offers a new direction for learned video coding. Our base layer is a low-resolution image compressor that replaces the full-resolution motion compressor. The low-resolution coded image is merged with the warped high-resolution images to generate a high-quality image as a conditioning signal for the enhancement-layer image coding in full resolution. One advantage of this architecture is significantly reduced computational complexity due to eliminating the motion information compressor. In addition, we adopt a skip-mode coding technique to reduce the transmitted latent samples. The rate-distortion performance of our scheme is slightly lower than that of the state-of-the-art learned B-frame coding scheme, B-CANF, but outperforms other learned B-frame coding schemes. However, compared to B-CANF, our scheme saves 45% of multiply–accumulate operations (MACs) for encoding and 27% of MACs for decoding. The code is available at https://***. Copyright © 2023, The Authors. All rights reserved.

关键词： Image coding

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Enhancing the Performance of E-Mode AlGaN/GaN HEMTs With Recessed Gates Through Low-Damage Neutral Beam Etching and Post-Metallization Annealing

IEEE Open Journal of Nanotechnology

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IEEE Open Journal of Nanotechnology 2023年 4卷 150-155页

作者： Chen, Yi-Ho Ohori, Daisuke Aslam, Muhammad Lee, Yao-Jen Li, Yiming Samukawa, Seiji National Yang Ming Chiao Tung University Parallel and Scientific Computing Laboratory Graduate Degree Program of College of Electrical and Computer Engineering Hsinchu300093 Taiwan Tohoku University Institute of Fluid Science Sendai980-8577 Japan National Yang Ming Chiao Tung University Parallel and Scientific Computing Laboratory Electrical Engineering and Computer Science International Graduate Program Hsinchu300093 Taiwan National Yang Ming Chiao Tung University Institute of Pioneer Semiconductor Innovation Hsinchu300093 Taiwan National Yang Ming Chiao Tung University Parallel and Scientific Computing Laboratory Institute of Communications Engineering Institute of Biomedical Engineering Hsinchu300093 Taiwan National Yang Ming Chiao Tung University Department of Electronics and Electrical Engineering Hsinchu300093 Taiwan National Yang Ming Chiao Tung University Institute of Communications Engineering Hsinchu300093 Taiwan

This study investigated the electrical properties of AlGaN/GaN high-electron-mobility transistors (HEMTs) with varied recess depths under the gate electrode. We demonstrated a recess depth of approximately 6 nm, which was achieved through neutral beam etching (NBE) technique with a low etch rate of 1.8 nm/min, resulting in device enhancement-mode (E-mode) behavior with threshold voltage (Vth) of 0.49 V. The effects of post-metallization annealing (PMA) on the device performance were also examined. The results revealed that PMA treatment improves the DC characteristics of the devices, including maximum drain current (IDMAX), transconductance (gm), subthreshold swing (SS), on-off ratio, and off-state leakage current, with maximum enhancement percentage of 18.3% for IDMAX, 3758% for on-off ratio, and 54.3% for SS. Moreover, this study compared the recess depths of metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs) with the SiN dielectric layer. The results showed that MIS-HEMTs exhibit more negative Vth values, which can be attributed to the controlled surface states achieved through passivation. © 2020 IEEE.

关键词： Etching

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Electrical Characteristic and Power Fluctuations of GAA Si NS CFETs by Simultaneously Considering Six Process Variation Factors

IEEE Open Journal of Nanotechnology

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IEEE Open Journal of Nanotechnology 2023年 4卷 229-238页

作者： Kola, Sekhar Reddy Li, Yiming National Yang Ming Chiao Tung University Parallel and Scientific Computing Laboratory Electrical Engineering and Computer Science International Graduate Program Hsinchu300093 Taiwan Parallel and Scientific Computing Laboratory National Yang Ming Chiao Tung University Hsinchu300093 Taiwan National Yang Ming Chiao Tung University Institute of Communications Engineering Hsinchu300093 Taiwan National Yang Ming Chiao Tung University Institute of Biomedical Engineering Hsinchu300093 Taiwan National Yang Ming Chiao Tung University Department of Electronics and Electrical Engineering Hsinchu300093 Taiwan

Characteristic variability induced by process variation effect (PVE) is one of technological challenges in semiconductor industry. In this work, we computationally study electrical characteristic and power fluctuations induced by six factors of PVE of the gate-all-around (GAA) silicon (Si) nanosheet (NS) complementary field-effect-transistors (CFETs) which are formed by vertically stacking n-FET on top of p-FET. Among the six factors, NS thickness (TNS), NS width (WNS), and gate length (LG) are identified as crucial factors contributing to large variations in device characteristics. The p-FET exhibits substantial off-state current fluctuation (about 151%) due to the bottom parasitic channel leakages. Compared with the magnitudes of dynamic and short circuit powers, the static power is marginal, but it possesses the largest fluctuation (up to 148%). If we assume that each factor of PVE has the same probability distribution as the others and all are mutually independent, the statistical sum of their power fluctuations will exhibit more than 50% overestimations, compared with the results when all factors are considered simultaneously. © 2020 IEEE.

关键词： III-V semiconductors

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Mechanism of Threshold Voltage Instability in Double Gate α-IGZO Nanosheet TFT under Bias and Temperature Stress

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IEEE Journal of the Electron Devices Society 2024年 12卷 464-471页

作者： Aslam, Muhammad Chang, Shu-Wei Chen, Yi-Ho Lee, Yao-Jen Li, Yiming Lee, Wen-Hsi Parallel and Scientific Computing Laboratory National Yang Ming Chiao Tung University Hsinchu300093 Taiwan Electrical Engineering and Computer Science International Graduate Program National Yang Ming Chiao Tung University Hsinchu300093 Taiwan Department of Electrical Engineering National Cheng Kung University Tainan City701401 Taiwan Institute of Pioneer Semiconductor Innovation Industry Academic Innovation School National Yang Ming Chiao Tung University Hsinchu300093 Taiwan Department of Electronics and Electrical Engineering National Yang Ming Chiao Tung University Hsinchu300093 Taiwan Institute of Communications Engineering National Yang Ming Chiao Tung University Hsinchu300093 Taiwan

Amorphous indium gallium zinc oxide (a-IGZO)-based thin film transistors (TFTs) are increasingly becoming popular because of their potential in futuristic applications, including CMOS technology. Given the demand for CMOS-compatible, ultra-scaled, reliable, and high-performing devices, we fabricate and analyze scaled-channel a-IGZO-TFTs with an optimal double-gate structure, a thin nanosheet-based channel, and an effective high- κ dielectric namely HfO2. The reliably reported double gate IGZO nanosheet TFTs (DG-IGZO-NS-TFTs) are tested under positive and negative bias stress at variant temperatures, and the resulting modulations are analyzed critically. The reported DG-IGZO-NSTFTs exhibit a negative side threshold voltage shift (Δ Vth) accompanied by an increase in Ion/Ion(0) under negative bias temperature stress (NBTS) at elevated temperatures, which indicates the presence of additional charges. An anomalous negative side shifting of the Vth is observed under positive bias temperature stress (PBTS), where diffused hydrogen atoms are identified as introducing excess n-type carriers into the channel and causing the observed Δ Vth. The spectroscopic analysis is performed to establish evidence for the assumed mechanisms, and the role of individual gates is investigated in the context of performance variance under temperature-bias stress. Moreover, the partial reversibility of the stress-induced degradation is experimentally established and methodically discussed. Overall, the reported results offer a comprehensive understanding of scaled-channel DG-NS-IGZO-TFTs, which help shape performance-enhancement strategies, control degradation mechanisms, and define appropriate application scenarios. © 2013 IEEE.

关键词： Thin film transistors

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Microwave-Based Complementary Split-Ring Resonator for the Detection of Variations in Aqueous Media

Microwave-Based Complementary Split-Ring Resonator for the D...

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Microelectronics Technology and Devices (SBMicro)

作者： Reinaldo Velásquez Diego Tami Gilberto Medeiros-Ribeiro Cássio G. Rego Jhonattan C. Ramirez Graduate Program in Electrical Engineering UFMG Brazil Institute of Technological Sciences UNIFEI Brazil Department of Computer Science UFMG Brazil Department of Electronics Engineering UFMG Brazil

In this paper, we demonstrated a highly sensitive microwave-based resonator sensor capable of detecting variations in an aqueous medium of up to 0.94 mg/dL. In the presented device, the intrinsic resonant response (resonant amplitude, resonant frequency, and quality factor) is capacitively perturbed in reaction to the sample presence. To achieve higher sensitivity, the sample under testing generally is placed on the resonator surface, where the electric field is highly concentrated at the operating frequency. Thus, demonstrating excellent results in terms of sensitivity and reproducibility.

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Designing Classical Header Bits for Quantum Wrapper Networking with O-band Quantum Signal

Designing Classical Header Bits for Quantum Wrapper Networki...

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2023 Laser Science, LS 2023

作者： Gül, G. On, M. Berkay Singh, S.K. Proietti, R. Kanter, G.S. Yoo, S.J.B. Kumar, P. Graduate Program in Applied Physics Northwestern University 2145 Sheridan Road EvanstonIL60208 United States Department of Electrical and Computer Engineering University of California Davis DavisCA95616 United States Department of Electronics and Communication Eng. Indian Institute of Technology Roorkee247667 India Department of Electronics and Telecommunications Engineering Politecnico di Torino Italy Center for Photonic Communication and Computing Dept. of Electrical and Computer Eng. Northwestern University EvanstonIL60208 United States

We investigate the impact of wavelength choice for the classical headers in quantum wrapper networking with O-band quantum payload. We show that a C-band header performs substantially better than an O-band header. ... 详细信息

关键词： Quantum electronics

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Designing Classical Header Bits for Quantum Wrapper Networking with O-band Quantum Signal

Designing Classical Header Bits for Quantum Wrapper Networki...

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Frontiers in Optics + Laser Science 2023, FiO, LS 203: Part of Frontiers in Optics + Laser Science 2023

作者： Gül, G. Berkay On, M. Singh, S.K. Proietti, R. Kanter, G.S. Yoo, S.J.B. Kumar, P. Graduate Program in Applied Physics Northwestern University 2145 Sheridan Road EvanstonIL60208 United States Department of Electrical and Computer Engineering University of California Davis DavisCA95616 United States Department of Electronics and Communication Eng. Indian Institute of Technology Roorkee247667 India Department of Electronics and Telecommunications Engineering Politecnico di Torino Italy Center for Photonic Communication and Computing Dept. of Electrical and Computer Eng. Northwestern University EvanstonIL60208 United States

ISBN: (纸本)9781957171296

关键词： Bandpass filters Beam splitters Bit error rate Entanglement distribution Quantum teleportation Raman scattering

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The Impact of Hot Carrier Injection-Induced Device Degradation for Lower-Power FinFETs

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Journal of Electronic Materials 2023年第2期52卷 1391-1399页

作者： Chen, Yu-Lin Yeh, Wen-Kuan Hsu, Heng-Tung Chen, Ke-Horng Lien, Der-Hsien Lin, Wen-Chin Yu, Tien-Han Chiu, Yu-Sheng Godwinraj, D. Godfrey, D. Wu, Chien-Hung International College of Semiconductor Technology National Yang Ming Chiao Tung University Hsinchu Taiwan Graduate Degree Program of College of Electrical and Computer Engineering National Yang Ming Chiao Tung University Hsinchu Taiwan Institute of Electronics National Yang Ming Chiao Tung University Hsinchu Taiwan Institute of Microelectronics National Cheng Kung University Tainan Taiwan Department of ECE Amal Jyothi College of Engineering Kerala Kottayam India Department of Optoelectronics and Materials Engineering Chung Hua University Hsinchu Taiwan Department of Electronics and Communication Engineering Dayananda Sagar University Bengaluru India National Applied Research Laboratories Hsinchu Taiwan

The impact of hot carrier injection (HCI) on the performance of standard and low-VT FinFETs are investigated and benchmarked with each other. For this investigation, these FinFETs were fabricated with various gate lengths (L) from 16 to 36 nm. HCI-induced transconductance degradation in standard devices for gate length variations of 36 nm down to 16 nm was 75%, while it was 35% for low-VT devices. Similarly, the degradation of threshold voltage in standard devices for gate length variations of 36 nm down to 16 nm was 39%, while it was 36% for low-VT device. In this work, as the device is subject to HCI, we found that: (1) short-channel devices cause severe degradation on the threshold voltage and transconductance (gm) compared to long-channel devices, owing to the higher electric field for short-channel devices at the gate edge, (2) standard devices exhibit a more stable threshold voltage than that of low-VT power devices, since the TiN barrier layer prevents Al atom diffusion into the HfO2 layer, and (3) the transconductance efficiency of standard devices is better than that of low-VT power devices. Further, the lower-VT devices show lower transconductance degradation than standard devices. However, the transconductance degradation of the long-channel standard and low-VT devices are the same. Compared to short-channel low-VT devices, extended-channel standard devices are more immune to the HCI effect. © 2022, The Minerals, Metals & Materials Society.

关键词： Threshold voltage

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