The electric power is indispensable for modern life. However, there is a problem of harmonic disturbance when the harmonic power runs into electronic devices. To overcome the problem and realize a stable supply of the...
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This paper proposes and experimentally shows how we combine light penetration concept and simple image processing operations in order to identify gender of a silkworm pupa. Key features include low cost, fast, and hig...
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This article describes the extraction of total series resistance, effective channel length and low field effective channel mobility degradation parameter at temperature in the range of 25°C-125 °C of NMOS de...
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This article describes the extraction of total series resistance, effective channel length and low field effective channel mobility degradation parameter at temperature in the range of 25°C-125 °C of NMOS device .The relation of I DS and V GS in a linear region was used with a different of channel length. The procedure is based on the measurement of the transconductance characteristics of MOSFET in the linear region. The transconductance characteristics is determine for the several devices of difference drawn channel length. The results shows that, the effective channel length is increased in a range of 5×10 -10 m/°C. The low field mobility degradation parameter is decreased by the factor of 0.733. The total series resistance is increased in the range of 1.4 Ω-μm/°C. The errors between the predicted model and measured of I DS &V GS in linear region is approximately 3 %.
In this study a data acquisition card has been designed and implemented to observe and analysis of the voltages and the currents of an alternator under resistive, capacitive and inductive loads. Detail analysis of pow...
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The spreading of thalassemia, the most common genetic disease in tropical areas, is increasing due to a migration thus the prevention and control program (PCP) of Thalassemia has been established. To better promote th...
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FPGA devices are a perfect platform for implementing image processing algorithms. In the article, an advanced video system is presented, which is able to detect moving objects in video sequences. The detection method ...
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FPGA devices are a perfect platform for implementing image processing algorithms. In the article, an advanced video system is presented, which is able to detect moving objects in video sequences. The detection method is using two algorithms. First of all, a multimodal background generation method allows reliable scene modelling in case of rapid changes in lighting conditions and small background movement. Finally a segmentation based on three parameters lightness, colour and texture is applied. This approach allows to remove shadows from the processed image. Authors proposed some improvements and modifications to existing algorithms in order to make them suitable for reconfigurable platforms. In the final system only one, low cost, FPGA device is able to receive data from high speed digital camera, perform a Bayer transform, RGB to CIE Lab colour space conversion, generate a moving object mask and present results to the operator in real-time.
This Paper presents a prediction model of traffic congestion condition on the roads in Bangkok. The results from our prediction model will be useful for systems related to traffic information. We constructed a model w...
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This Paper presents a prediction model of traffic congestion condition on the roads in Bangkok. The results from our prediction model will be useful for systems related to traffic information. We constructed a model which can achieve 92.1% of accuracy on prediction of the congestion condition in next 30 minutes. Then, we found that the accuracy on the results that change from the current state is unsatisfiable. Hence, we constructed a new model that can improve the accuracy on this portion of traffic data. Moreover, we propose a new performance measurement which can distinguish the results in more detail. The final results show that our approach can improve the accuracy over the former model.
This paper presents a study of effect of deflection length and emitter width on sensitivity of magnetotransistor. The device has been fabrication on standard CMOS technology. It can detect magnetic field applied verti...
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This paper presents a study of effect of deflection length and emitter width on sensitivity of magnetotransistor. The device has been fabrication on standard CMOS technology. It can detect magnetic field applied vertically to the chip. The structure consists of emitter (n-type), base (p-type) and collector (n-type) on silicon p-substrate. The device can sense magnetic field by Hall Effect theory and carrier deflection resulting to difference between base and collector current (ΔI CB ) related to magnetic field (B Z ) strength. From the experiment is comparing emitter width of 4, 5 and 10 micrometer at deflection length of 10 and 20 micrometer. The result shows that increase in injection emitter width cause to the sensitivity decreases and the deflection length of 20 micrometer is the best sensitivity. These results are very useful for developing the magnetotransistor for high sensitivity and performance.
Low power consumption device can be realized by low junction leakage current. This leakage current relates to the defects in the depletion region of p-n junction. Among variety process steps, implantation step may gen...
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Low power consumption device can be realized by low junction leakage current. This leakage current relates to the defects in the depletion region of p-n junction. Among variety process steps, implantation step may generate defects. Therefore, the implantation-induced defects have been studied from the activation energy which has been obtained from the leakage current of p-n junction. The different geometry p-n junctions have been fabricated by a standard CMOS technology. The current-voltage (I-V) and high frequency capacitance-voltage (C-V) characteristics of p-n junctions with temperature dependence have been measured. The electrically active defects from implantation process can be extracted from the junction generation current density versus temperature. Base on this analysis, it will be demonstrated that the implantation-induced defects have been found in p + -n-well more than in n + -p-substrate. Finally, the possible nature of the defect will be discussed.
In this work, quartz crystal microbalance humidity sensor was fabricated by inkjet printing technique. Poly (3, 4 ethylenedioxythiophene)/poly-styrene-sulfonic acid (PEDOT7 PSS), one of the most widely used polymer co...
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In this work, quartz crystal microbalance humidity sensor was fabricated by inkjet printing technique. Poly (3, 4 ethylenedioxythiophene)/poly-styrene-sulfonic acid (PEDOT7 PSS), one of the most widely used polymer composites, was printed on QCM electrode as sensing layer using Dimatrix material inkjet printer. The main advantage of this coating method is its high precision of solution coating with accurately controlled volume and area. The printed layer was varied from 1 to 20 layers. With 20 PEDOT/PSS printed layers, the humidity sensitivity is found increased by more than three orders of magnitude compared to uncoated QCM. In addition, the PEDOT/PSS coated QCM exhibits fast humidity detection with short response and recovery times. Thus, the PEDOT/PSS printed on the QCM electrode is an effective way to improve humidity-sensing characteristic of QCM.
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