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3rd International Conference on Sentiment Analysis and Deep Learning, ICSADL 2024

作者： Karthik, S. Shirly Edward, A. Tamilarasi, R. SRM Institute of Science and Technology Faculty of Engineering and Technology Department of ECE Chennai India

ISBN: (数字)9798350396157

ISBN: (纸本)9798350396157

The device miniaturization and enhanced performance in semiconductor technology has prompted the exploration beyond conventional CMOS, leading to innovative transistor designs. Among these advancements, FinFET technology stands out as a promising candidate capable of overcoming the limitations imposed by Moore's Law. This survey delves into the intricacies of FinFET technology and its pivotal role in surpassing the Moore's Law barrier, providing a comprehensive overview of its fundamental principles. Highlighting the unique three-dimensional structure and improved electrostatic control of FinFETs, the paper explores their implications for the future of wireless communication systems. It emphasizes how the char-acteristics of FinFET technology align with the demands of next-generation communication protocols. In addition to discussing the architectural advantages of FinFETs, the survey addresses the challenges associated with their widespread adoption, in-cluding a focus on power efficiency, speed, and overall system performance. Potential solutions to these challenges are also ex-plored. Furthermore, the survey critically analyzes existing liter-ature, summarizing key findings from recent research and development efforts related to FinFET technology. This encompasses advancements in manufacturing processes, device integration techniques, and the application of FinFETs in emerging wireless communication standards. At the crossroads of semiconductor innovation and wireless communication evolution, this survey aims to provide a comprehensive understanding of how FinFET technology serves as a catalyst in breaking traditional Moore's Law constraints. By exploring synergies between FinFETs and future wireless communication systems, this survey contributes to the ongoing discourse on the trajectory of semiconductor tech-nology beyond conventional limits, acknowledging and addressing the challenges posed by FinFET adoption. © 2024 IEEE.

关键词： FinFET

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Analysis of Inheritance of Criminal Behavior from the Parents Using Genetic Algorithm

Analysis of Inheritance of Criminal Behavior from the Parent...

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International Conference on Advanced Communications and Machine Intelligence, MICA 2023

作者： Banerjee, Arindam Department of ECE Faculty of Science and Technology ICFAI University Tripura Agartala India

ISBN: (纸本)9789819762217

In this paper, inheritance of criminal behavior of a person from his or her parents has been studied and analyzed to reduce the rate of criminal offense in a country. Here, an algorithmic model, based on some random observations of human habits which can lead to a criminal offense, has been developed using the well-known Genetic Algorithm to analyze the criminal behavior of a child due to the effect of genes which are inherited from the parents. In general, a criminal mind of a child can be generated from two factors: (1) Direct Inheritance of Criminal Nature from parents and (2) Indirect Inheritance of Criminal Nature due to some psychological disorder like epilepsy, insanity, etc. In this paper, the author has analyzed the criminal nature of a child based on the first factor. Here, in this analysis technique, few observations related to human nature which can lead to criminal activity have been included to analyze the effect of criminal behavior onto the offspring. The algorithms have been developed using Python language. © The Author(s), under exclusive license to Springer Nature Singapore Pte Ltd. 2024.

关键词： Python

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Wearable Textile Antenna Design for Body Area Network Applications at 2.45 ghz Frequency Band with Conductive Fabric Patch 3rd

Wearable Textile Antenna Design for Body Area Network Applic...

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3rd International Conference on Computing and Communication Networks, ICCCN 2023

作者： Rajesh, A. Vani, R. Rama Rao, B. Research scholar ECE Department Faculty of Engineering and Technology SRM Institute of Science and Technology Ramapuram Tamilnadu Chennai600089 India Professor Department of ECE Faculty of Engineering and Technology SRM Institute of Science and Technology Ramapuram Tamilnadu Chennai600089 India Professor Department of ECE Aditya Institute of Technology and Management Tekkali India

ISBN: (纸本)9789819726707

The textile patch antenna designs of simple traditional, rectangular by three vertical slots are incorporated. In the same patch, for enhancement of impedance matching further variation with limited corners at both bottom corners (stage-2) and two parasitic elements are added in (stage-3) for operation in the frequency band 2.4–2.5 GHz this frequency band is useful for many applications like industrial, scientific, and medical (ISM) band. This variable textile patch antenna design is used for body area network applications. To achieve long distance communications, the radiated power of the variable antenna is increased. The back radiation must below specific absorption ratio (SAR) to provide human safety and also presented an antenna with design improvisations is operating at 2.45 GHz in ISM band. The design consists of a microstrip line fed wearable textile patch antenna with a dimension of 80 × 84 × 2 mm3 and denim jeans substrate of dielectric constant 1.6. The practical results are proved by computing the SAR impact with 2 human body "tissue models" for human upper arm (humerus) and the back. Finally, the comparison between simulated and measured results is observed. © The Author(s), under exclusive license to Springer Nature Singapore Pte Ltd. 2025.

关键词： Slot antennas

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Time Delay Estimation in Radar System using Fuzzy Based Iterative Unscented Kalman Filter

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Computer Systems science & Engineering 2023年第3期44卷 2569-2583页

作者： T.Jagadesh B.Sheela Rani Faculty of Electronics Engineering Sathyabama Institute of Science and TechnologyChennai600119India Department of ECE KPR Institute of Engineering and TechnologyCoimbatore641407India Sathyabama Institute of Science and Technology Chennai600119India

RSs(Radar Systems)identify and trace targets and are commonly employed in applications like air traffic control and remote *** are necessary for monitoring precise target *** of RSs are non-linear as the parameters TDEs(time delay Estimations)and Doppler shifts are computed on receipt of echoes where EKFs(Extended Kalman Filters)and UKFs(Unscented Kalman Filters)have not been examined for ***,certain times result in poor accuracies and SNRs(low signal to noise ratios)especially,while encountering complicated *** work proposes IUKFs(Iterated UKFs)to track onlinefilter performances while using optimization techniques to enhance *** use of cost functions can assist state corrections while lowering costs.A new parameter is optimized using MCEHOs(Mutation Chaotic Elephant Herding Optimizations)by linearly approximating system non-linearity where OIUKFs(Optimized Iterative UKFs)predict a target's unknown *** obtain optimal solutions theoretically,OIUKFs take less iteration,resulting in shorter execution *** proposed OIUKFs provide numerical approximations which are derivative-free *** evaluation results with estimators show better performances in terms of reduced NMSEs(Normalized Mean Square Errors),RMSEs(Root Mean Squared Errors),SNRs,variances,and better accuracies than current approaches.

关键词： Radar system unscented kalmanfilter extended kalmanfilter optimized iterative unscented kalmanfilter mutation chaotic elephant herding optimization time delay estimation

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Segmentation of Hemorrhagic stroke in Brain MR Image 1

Segmentation of Hemorrhagic stroke in Brain MR Image

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1st International Conference on Advances in Electrical, Electronics and Computational Intelligence, ICAEECI 2023

作者： Srisabarimani, K. Arthi, R. SRM Institute of Science and Technology Faculty of Engineering and Technology ECE Chennai India

ISBN: (纸本)9798350342796

Strokes are caused by issues with the blood supply to the brain, either a blockage in the blood supply or a burst blood artery inside the brain. There are two basic groups into which strokes can be divided. Hemorrhagic and Ischemic stroke. Ischemic strokes brought on by arterial occlusion. All strokes are ischemic in about 87% of cases. When a blood vessel supplying the brain is "clogged"or obstructed, it prevents blood flow to a portion of the brain, resulting in an ischemic stroke. Lack of oxygen and nutrition causes the brain's cells and tissues to start dying within minutes. Bleeding results in hemorrhagic strokes, which are strokes. The majority of strokes - about 13% - are hemorrhagic Proposed works makes essay to provide a theoretical framework for helping doctors identify brain stroke in patients. The use of picture segmentation has been used to find brain stroke. A brain stroke image obtained by magnetic resonance imaging (MRI) was analyzed by the researcher using Python software. © 2023 IEEE.

关键词： DWI GRE Hemorrhagi Ischemic MRI Segmentation Stroke SWI

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Intelligent Power Device Modeling using Optimal Deep Learning Approach for AlGaN/GaN HEMTs 10

Intelligent Power Device Modeling using Optimal Deep Learnin...

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10th International Conference on Electrical Energy Systems, ICEES 2024

作者： Priscilla, M. Mohan Babu, A. Radhika, R. SRM Institute of Science and Technology Faculty of Engineering and Technology Department of ECE Chennai India S.A.Engineering College Department of ECE Chennai India

ISBN: (纸本)9798350353778

AlGaN/GaN high-electron-mobility transistors (HEMTs) are the most recent sort of power devices leveraging the characteristic features of gallium nitride (GaN) and its aluminum gallium nitride (AlGaN) alloy. This device is well-known for its robustness in harsh environments, high-power capabilities, and efficient operation at high frequencies. Modeling AlGaN/GaN HEMTs includes comprehensive simulation to capture the behavior of different operational conditions, which address features such as reliability, carrier transport, gate control, and thermal effects. Accurate modeling is vital for enhancing design efficiency, optimizing device performance, and advancing their integration in RF applications and next-generation power electronics. Lately, deep learning (DL) has become an effective strategy for modelling AlGaN/GaN HEMTs, especially in the field of power devices. By using complex neural network architectures and vast datasets, deep learning (DL) approaches can efficiently capture the complicated relationships between material properties, device structure, performance metrics, and operating conditions. This manuscript develops an Intelligent Power Device Modeling using an Optimal Deep Learning Approach (IPDM-ODLA) for AlGaN/GaN HEMTs. The presented IPDM-ODLA technique aims to properly anticipate the switching behaviors of the devices without delving into the physics and geometry of the devices. In the IPDM-ODLA technique, an initial stage of power device modelling using bidirectional long short-term memory (BiLSTM) model is used. For enhancing the performance of the BiLSTM model, the IPDM-ODLA technique applies grasshopper optimization algorithm (GOA) for hyperparameter tuning process. The experimental validation of the IPDM-ODLA technique can be examined using distinct aspects. The simulation results pointed out that the IPDM-ODLA technique achieves better performance than other models. © 2024 IEEE.

关键词： III-V semiconductors

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Analysis and Implementation of a Multi-path and Metal-Stacked 8-Shaped Inductor 1

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7th International Conference on Microelectronics, Electromagnetics and Telecommunication, ICMEET 2022

作者： Somraj, Keerthi Akhendra Kumar, P. Department of ECE Faculty of Science and Technology IFHE University Hyderabad India

ISBN: (数字)9789811988653

ISBN: (纸本)9789811988646

The enhancements in technology, have reduced the area of the transceiver, increased the frequency of operation which in turn is increasing the power requirement, and the distance between the elements on the chip has to be highly optimized. It is in this scenario that an 8-shaped on-chip inductor can be used in a transceiver circuit. This paper presents a compact multi-path and metal-stacked 8-shaped inductor which offers better inductance as compared to the single-path, multi-path, and metal-stacked inductors. The inductance of the proposed inductor is observed as 1.4 nH which is nearly 20\% more than the inductance of a single-path metal-stacked inductor. © 2023, The Author(s), under exclusive license to Springer Nature Singapore Pte Ltd.

关键词： Inductance

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Revolutionizing High Power Electronics: GaN-Based-TFET as the Next Frontier 5

Revolutionizing High Power Electronics: GaN-Based-TFET as th...

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5th International Conference on Intelligent Communication Technologies and Virtual Mobile Networks, ICICV 2024

作者： Kavitha, V.P. Magesh, V. Theivanathan, G. Jayandhi, G. Srm Institute of Science and Technology Faculty of Engineering and Technology Department of Ece Chennai India Velammal Engineering College Department of Ece Chennai India Saveetha School of Engineering Saveetha University Department of Ece Chennai India

ISBN: (纸本)9798350385649

As the demand for high-power electronics spans diverse industries, the pursuit of innovative semiconductor devices capable of meeting burgeoning power requirements becomes imperative. This article investigates the transformative capabilities of Gallium Nitride (GaN)-based Tunnel Field-Effect Transistors (TFETs) within the realm of high-power applications. GaN celebrated for its exceptional electrical properties, emerges as a promising contender poised to redefine the boundaries of power electronics. Leveraging a Tunnel Field-Effect Transistor design, distinguished by its unique tunnelling mechanism, these devices confer distinct advantages over traditional transistor technologies, including reduced leakage current and heightened energy efficiency. The simulation in this study aims to achieve an On-state current of 10-8A and subthreshold swing (SS) of 56mV/dec with a fixed off-state current of 10-12A. This article delves into the pivotal features of GaN-based TFETs, emphasizing their applicability in high-power scenarios and their potential to revolutionize the power electronics landscape. By offering insights into the underlying principles and recent advancements in this technology, the article seeks to enhance understanding and position GaN-based TFETs as the next frontier in high-power electronic devices. © 2024 IEEE.

关键词： Gallium nitride

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Security Enhancement using Image Hotspot with Hidden Privacy-Cipher text Policy-Attribute Based Encryption 2

Security Enhancement using Image Hotspot with Hidden Privacy...

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2nd International Conference on Advances in Computational Intelligence and Communication, ICACIC 2023

作者： Mirdula, S. Roopa, M. Faculty of Engineering and Technology Department of ECE SRM Institute of Science and Technology Ramapuram Chennai India

ISBN: (纸本)9798350318456

Cloud computing is one of the developing fields for the automation and maintenance of several organizations. It increases the flexibility of the applications and has improved their efficiency. Due to this, a greater number of clients opt for cloud computing. Though it has several advantages in terms of maintenance and functioning of the applications, there is always the issue of data security and reliability. Various research works have concentrated on the security aspect of cloud computing and have proposed different protocols and algorithms to provide the user with the necessary security. However, these security solutions are primarily software-based and lack a basic architecture for protecting the data from malicious attacks. With the development of cryptography and other encryption models, it is difficult for attackers to decrypt the data and provide the necessary solution. This paper uses these advancements to provide a better security model that uses attribute-based encryption to protect user data. The cipher text policy is also used as a standard for this encryption process, and the user is given full control over his data. The file uploading is protected using the HP-CP-ABE method for secured file uploading. The authority center is maintained to authenticate the users in the system. And finally, an image shield security system is used to secure the users' login. And finally, an OTP verification process is for approving the user. The proposed security model provides a foolproof mechanism to safeguard user security by providing security at different levels. The efficiency of the proposed system is compared with various existing ones, and the usability of the model is validated. The validation clearly shows that the proposed model provides better security than the existing ones. © 2023 IEEE.

关键词： Cryptography

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Challenges in Security, Privacy and its Countermeasures - An IoT Perspective 1

Challenges in Security, Privacy and its Countermeasures - An...

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1st International Conference on Computer science and Emerging Technologies, CSET 2023

作者： Mirdula, S. Roopa, M. Srm Institute of Science and Technology Faculty of Engineering and Technology Department of Ece Chennai Ramapuram India

ISBN: (纸本)9798350341737

In Digital transformation era, the expected trends in the technology put forward to the rise of Internet of Things. Contributing the data in web-based applications is increasing in now-a-days scenario. Sharing the data via internet and storing the sensitive information in database is critical one. One of the major constraints with IoT is limited computing and memory that deals with real time applications hence possibilities of vulnerabilities is high. With fast growing technological aspects, threats and vulnerabilities are also commensurately growing. In day-to-day life most of the IoT devices are compromised with attacks so it is apparent to discuss the security issues with its counter measures. This paper elucidates the classification of various attacks occurs and ensuring the security to find the most prominent attacks. This paper discusses the extensive summary of classification of attacks based of IoT layered approach, Protocol based approach and cloud-based attacks along with its preventive measures. © 2023 IEEE.

关键词： Internet of things

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