A new concept is proposed for lensed fibres fabricated according to a collective and low cost process. This process is based on the cleaving and splicing of optical fibre ribbons and is suitable for the coupling of la...
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A review of the main results concerning the ion implantation of the rare-earth elements is given. To obtain the best optical activation of rare-earths, we attempt to optimize the implantation (energy, dose) and anneal...
A review of the main results concerning the ion implantation of the rare-earth elements is given. To obtain the best optical activation of rare-earths, we attempt to optimize the implantation (energy, dose) and annealing (temperature, duration) conditions. The studied materials are Si, II-VI binaries (ZnTe, CdS), III-V binaries (GaAs, InP), III-V ternaries (GaAlAs, GalnAs) and III-V quaternaries (GaInAsP).
The luminescence of erbium implanted in hydrogenated amorphous silicon (a-Si: H) is presented. For the first time an intense and relatively sharp luminescence at 1.54 mm is observed in a-Si: H, using implanted erbium....
The luminescence of erbium implanted in hydrogenated amorphous silicon (a-Si: H) is presented. For the first time an intense and relatively sharp luminescence at 1.54 mm is observed in a-Si: H, using implanted erbium. The Er+ emission intensity strongly depends on the hydrogen film content and on the measurement temperature. A direct correlation between the optical gap energy of the semiconductor and the hydrogen film content is observed.
1. *** continuing reductions in semiconductor device dimensions high spatial resolution physical and chemical analysis techniques will be more and more required for defect analysis and process development in the micro...
1. *** continuing reductions in semiconductor device dimensions high spatial resolution physical and chemical analysis techniques will be more and more required for defect analysis and process development in the microelectronics field. Transmission Electron Microscopy (TEM) analysis is now extensively used thanks to the fast Focused Ion Beam (FIB) specimen preparation technique which has furthered its development. Recently, we have shown the advantages of adding Electron Energy Loss Spectroscopy (EELS) to FIB-TEM analysis for semiconductor process characterization. In this paper we extend the EELS technique using FIB sample preparation to Energy Filtering TEM (EFTEM) observations. The EFTEM analysis allows high-resolution compositional mapping using spectroscopic imaging of core level ionization edges3. We show some applications of FIB-EFTEM to defect analysis and process development.2. Experimental *** FIB system is a MICRION model 9500 EX using a gallium ion beam of 50 keV maximum energy with a 5 nm minimum spot diameter.
The determination by X-ray diffraction of the elastic strain tensors and the corresponding stress tensors in uniform films and patterned lines of tungsten was used to investigate the effect of line width. The stresses...
The determination by X-ray diffraction of the elastic strain tensors and the corresponding stress tensors in uniform films and patterned lines of tungsten was used to investigate the effect of line width. The stresses were found to increase with increasing line width. These experimental results are discussed with respect to the values obtained from a model using a distributed force in the line. The results of the calculations are in agreement with the X-ray measurements. The edge effects appear to be significant for tungsten lines.
1. IntroductionThe FIB (focused ion beam) is now widely accepted as the most site-specific TEM preparation tool and as such proves to be highly valuable when analysing ULSI devices. However, using high-energy Gallium ...
1. IntroductionThe FIB (focused ion beam) is now widely accepted as the most site-specific TEM preparation tool and as such proves to be highly valuable when analysing ULSI devices. However, using high-energy Gallium ions for milling induces amorphization of the crystal surfaces. A method able to quantify this surface alteration on silicon using a combination of CBED (convergent beam electron diffraction) and EELS (electron energy loss spectroscopy) is presented. CBED is a powerful tool that also can generate an accurate measure of crystal thickness. EELS can yield the total sample thickness, so from the difference the combined amorphous layers can be assessed. Two sets of application results are presented: the first one is obtained on a FIB thinned sample using an ion energy of 50 keV and the second set of results confirms the validity of the proposed method on a mechanically polished specimen with no subsequent ion milling.
For FIR, filters, limit functions generated in iterated rational schemes are not invariant under shift operations, unlike what happens in the dyadic case: this feature prevents an analysis iterated rational filter ban...
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作者：
MAUUARY, LaurentFrance Telecom
Centre National d'etudes des telecommunications CNET/LAA/TSS/RCP Technopole Anticipa 2 avenue Pierre Marzin LANNION22307 France
An adaptive filter in a blind equalization scheme has recently been proposed in order to reduce telephone line effects for speech recognizers. This paper presents the principles of this filter and describes the implem...
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The use of optimal postfiltering has been previously proposed to increase the performance of microphone arrays. In this paper, an analysis of the postfilter shows that its behaviour is closely related to the one of th...
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