Proton-implantation doping offers a feasible method to modify the doping profile in semiconductor grade silicon in depths ranging up to several hundred micrometers at comparatively low thermal budgets. The hydrogen-re...
Proton-implantation doping offers a feasible method to modify the doping profile in semiconductor grade silicon in depths ranging up to several hundred micrometers at comparatively low thermal budgets. The hydrogen-related donors are radiation-induced defect complexes decorated by hydrogen. During the proton implantation, typically in the energy range of several 100 keV to several MeV and with fluences in the range between about 1013 cm-2 and 1015 cm-2, intrinsic radiation defects are induced. During a successive anneal in the temperature range between about 300—500 °C the implanted hydrogen diffuses from its projected range through the radiation damage profile and decorates the radiation-induced defects or defect complexes, thus activating, the hydrogen-related donors. Due to this basic mechanism, the profile shape of the hydrogen-related donor profiles is closely correlated to the initial damage profile of the radiation-induced lattice defects. The profiles, hence, exhibit an extended penetrated range with an approximately constant concentration followed by an expressed peak near the end-of-range of the protons. The achievable doping concentration of the hydrogen-related donors induced by the proton implantation and successive annealing is, however, typically limited to a few 1015 cm-3. Earlier studies, based mainly on co-implantations of helium and hydrogen, have led us to propose this to be due to an over-decoration effect of the hydrogen-related donors by excess hydrogen. Based on this assumption, we present a pre-conditioning method based on vacancy-related gettering sites in order to reduce the concentration of excess hydrogen. The procedure comprises a pre-implant with protons and an annealing step at elevated temperatures above the range typically used for proton-implantation doping and is thus fully applicable to a commercial manufacturing environment. During this pre-conditioning, thermally stable higher-order defect complexes are created that are for the
Besides the application of local lifetime control, proton implantations can be used to create deep donor profiles in crystalline silicon. At a certain annealing temperature, the maximum hydrogen-related donor (HD) con...
Besides the application of local lifetime control, proton implantations can be used to create deep donor profiles in crystalline silicon. At a certain annealing temperature, the maximum hydrogen-related donor (HD) concentration is limited to a few 1015 cm-3 in the end-of-range depth of the radiation damage profile. This behavior is explained with a passivation of the shallow donors due to an excess supply of hydrogen at high proton doses. The impact of hydrogen remaining in the substrate from prior processing steps is investigated. As a countermeasure to the over-decoration effect, a pre-annealing step at elevated temperatures is investigated. This procedure is fully applicable in a commercial manufacturing environment. Experimental results from spreading resistance measurements are shown that clearly show the beneficial effect of the pre-conditioning. DLTS results of pre-conditioned samples are reported, that show a dominant deep defect level that was previously assigned to be vacancy related.
We review the principal mechanisms of deep-level defect formation after proton irradiation and subsequent annealing of float zone grown crystalline silicon. Various reaction paths commonly related to vacancy-complexes...
We review the principal mechanisms of deep-level defect formation after proton irradiation and subsequent annealing of float zone grown crystalline silicon. Various reaction paths commonly related to vacancy-complexes, interstitial oxygen and hydrogen are discussed. In the experimental part DLTS results of proton-irradiated pn-diode structures are presented. It appears that some detected defects show a thermal stability differing from that reported in literature. Furthermore the metastability of two defects at 300 meV and 418 meV below the conduction band is examined. This behavior commonly designated to a negative-U defect is for the first time reported in a sample annealed at 350° C.
Leakage current of silicon (Si) based diodes could be reduced by a factor of 1.,000 while using Thermal Laser Separation (TLS) compared to state-of-the-art mechanical blade dicing. Laser based heating and subsequent w...
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The sustained and cost-effective monitoring of the water quality within European coastal areas is of growing importance in view of the upcoming European marine and maritime directives, i.e. the increased industrial us...
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ISBN:
(纸本)9781479900022
The sustained and cost-effective monitoring of the water quality within European coastal areas is of growing importance in view of the upcoming European marine and maritime directives, i.e. the increased industrial use of the marine environment. Such monitoring needs mechanisms/systems to detect the water quality in a large sea area at different depths in real time. This paper presents a system for the automated detection and analysis of water quality parameters using an autonomous underwater vehicle. The analysis of discharge of nitrate into Norwegian fjords near aqua farms is one of the main application fields of this AUV system. As carrier platform the AUV "CWolf" from the fraunhofer IOSB-AST will be used, which is perfectly suited through its modular payload concept. The mission task and the integration of the payload unit which includes the sensor module, the scientific and measurement computer in the AUV carrier platform will be described. Few practice oriented information about the software and interface concept, the function of the several software modules and the test platform with the several test levels to test every module will be discussed.
The present work investigates the UV stability of the dye-sensitized solar cell (DSC) by parametrical investigation of the material influence on UV stability. UV illumination has been observed to cause degradation by ...
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The increasing role of Wikipedia as a source of human-readable knowledge is evident as it contains an enormous amount of high quality information written in natural language by human authors. However, querying this in...
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Having robots as reliable and robust mobile sensor platforms in unknown environments is getting more and more attractive. The control of each robot as a single machine is often complicated enough. But if there are mor...
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When managing IT environments and designing business processes, compliance regulations add challenges. Especially considering adaptive environments in the context of a service-oriented architecture in combination with...
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When managing IT environments and designing business processes, compliance regulations add challenges. Especially considering adaptive environments in the context of a service-oriented architecture in combination with exploiting the advantages of cloud technologies, maintaining compliance is cumbersome. Measures have to be taken on many application levels - including business processes, IT architecture, and business management. Although a lot of work has been done on various approaches covering compliance on one or more of these levels, in large companies more than one approach is likely to be employed. However, a unified approach for supporting the compliance tasks - like introduction, maintenance, and especially adaptation - on different levels of business and IT is missing. This work introduces this unifying approach, which links compliance requirements to implementing technology using variable compliance descriptors in order to comprehensively support compliance tasks. The advantage of this approach is that the impact of compliance on these different levels is tracked, thus enabling change propagation from changes in compliance requirements to infrastructure and business process reconfiguration.
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