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SSRN 2024年

作者： de Azpiazu Nadal, Ignasi Branco, Bruno Tovar, Guenter E.M. Kerres, Jochen Janssen, René A.J. Reynaud, Stéphanie Atanasov, Vladimir Institute of Chemical Process Engineering ICVT University of Stuttgart Böblinger Str. 78 Stuttgart70199 Germany IPREM UMR5254 CNRS Universite de Pau et des Pays de l’Adour E2S UPPA Pau France Molecular Materials and Nanosystems Institute of Complex Molecular Systems Eindhoven University of Technology P.O. Box 513 Eindhoven5600 MB Netherlands Institute of Interfacial Process Engineering and Plasma Technology IGVP University of Stuttgart Pfaffenwaldring 31 Stuttgart70569 Germany Fraunhofer Institute for Interfacial Engineering and Biotechnology IGB Nobelstr. 12 Stuttgart70569 Germany Cauerstr. 1 Erlangen91058 Germany Dutch Institute for Fundamental Energy Research De Zaale 20 Eindhoven5612 AJ Netherlands North-West University Chemical Resource Beneficiation Faculty of Natural Sciences Potchefstroom2520 South Africa

Herein, the synthesis and characterization of highly sulfonated poly(arylene sulfides) for application as polymer electrolyte membranes in water electrolysis is reported. In a first step, poly(arylene sulfides) polymers are obtained by using mild reaction conditions of a polycondensation reaction between 4,4´-thiobisbenzenethiol and decafluorobiphenyl. In a second step, poly(arylene sulfides) were sulfonated by a fluoro-thiol displacement click-reaction of the fluorinated monomer units by sodium 3-mercapto-1-propanesulfonate. Thus, highly sulfonated polymers were obtained and resulted in water soluble ionomers. Stable polymer electrolyte membranes with enhanced mechanical and chemical stability were attained by blending ionomers with the polybenzimidazole PBIOO. The resulting PEM with new sulfonated ionomer showed conductivity which was about 40 % higher than Nafion® at 90 °C. The membranes with the best proton conductivity and mechanical integrity were applied as electrode separators in water electrolysis. The selected tetra–sulfonated polymer-based proton exchange membrane was combined with optimized catalyst mixtures to reach 1.784 V at 1 A cm−2 in pure water in the water electrolysis single cell test. © 2024, The Authors. All rights reserved.

关键词： Polycondensation

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Cover Advanced Biomaterials 7/2011

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Advanced engineering Materials 2011年第12期13卷

作者： Esther C. Novosel Wolfdietrich Meyer Nadine Klechowitz Hartmut Krüger Michael Wegener Heike Walles Günter E. M. Tovar Thomas Hirth Petra J. Kluger Institute for Interfacial Engineering IGVT University of Stuttgart Nobelstraße 12 70569 Stuttgart (Germany) Department of Functional Polymer Systems Fraunhofer Institute for Applied Polymer Research IAP Geiselbergstraße 68 14476 Potsdam-Golm (Germany) Fraunhofer Institute for Interfacial Engineering and Biotechnology Nobelstraße 12 70569 Stuttgart (Germany) Institute for Tissue Engineering and Regenerative Medicine University of Würzburg Röntgenring 11 97070 Würzburg (Germany)

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Deep-Level Defects in High-Dose Proton Implanted and High-Temperature Annealed Silicon

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ECS Meeting Abstracts 2014年第31期MA2014-02卷

作者： Moriz Jelinek Johannes Laven Mathias Rommel Werner Schustereder Hans-Joachim Schulze Lothar Frey Reinhart Job Infineon Technologies Austria AG Infineon Technologies AG Fraunhofer Institute for Integrated Systems and Device Technology Department of Electrical Engineering and Computer Science Muenster University of Applied Sciences

Proton-implantations are valued for their ability to modify the properties of semiconductor grade silicon over a wide spatial range spanning four orders of magnitude between a depth of about 100 nm and 1 mm at comparatively low thermal budgets. At moderate proton doses up to about 1×1013 cm-2 and low annealing temperatures at about 300 °C, proton implantations are used to tailor the carrier life-times in bipolar power semiconductor devices. A large number of deep-level defects are known to form in this parameter regime. At higher doses and higher temperatures proton implantations may be used for modifying the doping profile of the silicon substrate by the creation of hydrogen-related thermal donors. While a large number of studies have investigated deep-level defects induced in the parameter regime typical to life-time tailoring, only few are concerned with the deep-level defects remaining in the samples. In this report we give a brief review of the principal mechanisms of deep-level defect formation after proton irradiation and subsequent annealing of float zone-grown crystalline silicon. Various reaction paths commonly related to vacancy-complexes, interstitial oxygen and hydrogen are discussed. In the experimental part of the study, new DLTS measurements of proton-irradiated pn-diode structures are presented. The study focusses on the regime of elevated doses and annealing temperatures, typically used for proton-implantation doping. The results suggest that for the increased doses used, some of the detected defects show a thermal stability differing from that reported in literature. At least for some of these defects, this may be due to their higher initial concentration. In addition, other defects may appear at higher temperatures as decay products of other, thermally more stable, defects induced by the high-dose implantations. For the first time, we also report on two defect levels at 300 meV and 418 meV below the conduction band with a metastable behavior. The

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Standardised evaluation of renewable energy systems

Standardised evaluation of renewable energy systems

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World Conference on Photovoltaic Energy Conversion

作者： A. Perujo R. Kaiser D.-U. Sauer H. Wenzl I. Baring-Gould N. Wilmot F. Mattera S. Tselepis F. Nieuwenhout C. Rodrigues A. Ruddell P. Lundsager V. Svoboda Joint Research Center-Institute for Environment and Sustainability-Renewable Energies Unit Italy Fraunhofer-Institute for Solar Energy Systems Germany Beratung fiir Battericn und Energietechnik Germany National Renewable Energy Laboratory USA Australian Cooperative Research Centre for Renewable Energy Australia Conunissariat a l‘Energie Atomique-Groupement Energetique de Cadarache France Centre for Renewable Energy Systems Greece The Netherlands Energy Research Foundation Netherlands National Institute for Engineering and Industrial Technology Portugal Energy Research Unit (ERU) at Rutherford Appleton Laboratory UK Riso National Laboratory Denmark Risoe National Laboratory Denmark Centre for Solar Energy and Hydrogen Research Germany

Renewable energy systems (RES) have to be designed specifically for both site and application. A comparison between different RES with the aim of evaluating the performance and the relative merits of the systems as a whole and/or their components is therefore difficult. As part of the BENCHMARKING project which is an international project carried out by 10 European research organisations, NREL (US) and the Australian Cooperative Research Centre, a proposal is here presented on how to measure performance, compress data and evaluate them in a standardised form, i.e. a standard evaluation report (SER). It covers all types of renewable energy systems at any location and for any application. Its primary aim is to allow a comparison of RES and their key components.

关键词： Renewable energy resources Power measurement Laboratories Australia Current measurement Solar energy Proposals Measurement standards Solar power generation Batteries

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A New Method to Increase the Doping Efficiency of Proton Implantation in a High-Dose Regime

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ECS Meeting Abstracts 2014年第31期MA2014-02卷

作者： Moriz Jelinek Johannes Laven Reinhart Job Werner Schustereder Hans-Joachim Schulze Mathias Rommel Lothar Frey Infineon Technologies Austria AG Infineon Technologies AG Department of Electrical Engineering and Computer Science Muenster University of Applied Sciences Fraunhofer Institute for Integrated Systems and Device Technology

Proton-implantation doping offers a feasible method to modify the doping profile in semiconductor grade silicon in depths ranging up to several hundred micrometers at comparatively low thermal budgets. The hydrogen-related donors are radiation-induced defect complexes decorated by hydrogen. During the proton implantation, typically in the energy range of several 100 keV to several MeV and with fluences in the range between about 1013 cm-2 and 1015 cm-2, intrinsic radiation defects are induced. During a successive anneal in the temperature range between about 300—500 °C the implanted hydrogen diffuses from its projected range through the radiation damage profile and decorates the radiation-induced defects or defect complexes, thus activating, the hydrogen-related donors. Due to this basic mechanism, the profile shape of the hydrogen-related donor profiles is closely correlated to the initial damage profile of the radiation-induced lattice defects. The profiles, hence, exhibit an extended penetrated range with an approximately constant concentration followed by an expressed peak near the end-of-range of the protons. The achievable doping concentration of the hydrogen-related donors induced by the proton implantation and successive annealing is, however, typically limited to a few 1015 cm-3. Earlier studies, based mainly on co-implantations of helium and hydrogen, have led us to propose this to be due to an over-decoration effect of the hydrogen-related donors by excess hydrogen. Based on this assumption, we present a pre-conditioning method based on vacancy-related gettering sites in order to reduce the concentration of excess hydrogen. The procedure comprises a pre-implant with protons and an annealing step at elevated temperatures above the range typically used for proton-implantation doping and is thus fully applicable to a commercial manufacturing environment. During this pre-conditioning, thermally stable higher-order defect complexes are created that are for the

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Frequency comb up- and down-conversion in a synchronously-driven χ(2) optical microresonator

arXiv

引用

arXiv 2018年

作者： Herr, Simon J. Brasch, Victor Szabados, Jan Obrzud, Ewelina Jia, Yuechen Lecomte, Steve Buse, Karsten Breunig, Ingo Herr, Tobias Laboratory for Optical Systems Department of Microsystems Engineering - IMTEK University of Freiburg Georges-Köhler-Allee 102 FreiburgD-79110 Germany Time and Frequency Rue de l’Observatoire 58 NeuchâtelCH-2000 Switzerland Geneva Observatory University of Geneva Chemin des Maillettes 51 VersoixCH-1290 Switzerland Fraunhofer Institute for Physical Measurement Techniques IPM Heidenhofstraße 8 FreiburgD-79110 Germany

Optical frequency combs are key to optical precision measurements. While most frequency combs operate in the near-infrared regime, many applications require combs at mid-infrared, visible or even ultra-violet wavelengths. Frequency combs can be transferred to other wavelengths via nonlinear optical processes, however, this becomes exceedingly challenging for high-repetition rate frequency combs. Here, it is demonstrated that a synchronously driven high-Q microresonator with a second-order optical nonlinearity can efficiently convert high-repetition rate near-infrared frequency combs to visible, ultraviolet and mid-infrared wavelengths providing new opportunities for microresonator and electro-optic combs in applications including molecular sensing, astronomy, and quantum optics. Copyright © 2018, The Authors. All rights reserved.

关键词： Infrared devices

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A New Method to Increase the Doping Efficiency of Proton Implantation in a High-Dose Regime

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ECS Transactions 2014年第11期64卷

Besides the application of local lifetime control, proton implantations can be used to create deep donor profiles in crystalline silicon. At a certain annealing temperature, the maximum hydrogen-related donor (HD) concentration is limited to a few 1015 cm-3 in the end-of-range depth of the radiation damage profile. This behavior is explained with a passivation of the shallow donors due to an excess supply of hydrogen at high proton doses. The impact of hydrogen remaining in the substrate from prior processing steps is investigated. As a countermeasure to the over-decoration effect, a pre-annealing step at elevated temperatures is investigated. This procedure is fully applicable in a commercial manufacturing environment. Experimental results from spreading resistance measurements are shown that clearly show the beneficial effect of the pre-conditioning. DLTS results of pre-conditioned samples are reported, that show a dominant deep defect level that was previously assigned to be vacancy related.

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Deep-Level Defects in High-Dose Proton Implanted and High-Temperature Annealed Silicon

引用

ECS Transactions 2014年第11期64卷

We review the principal mechanisms of deep-level defect formation after proton irradiation and subsequent annealing of float zone grown crystalline silicon. Various reaction paths commonly related to vacancy-complexes, interstitial oxygen and hydrogen are discussed. In the experimental part DLTS results of proton-irradiated pn-diode structures are presented. It appears that some detected defects show a thermal stability differing from that reported in literature. Furthermore the metastability of two defects at 300 meV and 418 meV below the conduction band is examined. This behavior commonly designated to a negative-U defect is for the first time reported in a sample annealed at 350° C.

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Efficient hole extraction for metal oxide based silicon heterojunction solar cells: A simulation study

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AIP Conference Proceedings 2018年第1期1999卷

作者： Christoph Messmer Martin Bivour Jonas Schön Martin Hermle 1Fraunhofer Institute for Solar Energy Systems ISE Heidenhofstraße 2 79110 Freiburg Germany 2Department of Sustainable Systems Engineering (INATECH) Albert-Ludwigs-University 79110 Freiburg Germany

To assist the engineering of novel silicon heterojunctions, numerical device simulations (Sentaurus TCAD) are used to improve knowledge regarding relevant heterojunction and thin film properties. This knowledge is necessary to understand limitations of current contacts and allow systematical optimization. With the focus on metal oxide based hole contacts, it is shown that for an ideal hole extraction from the c-Si absorber via the a-Si buffer and the transition metal oxide (TMO) into the external metal electrode, two conditions have to be fulfilled: A.) An induced c-Si pn-junction with a high p/n ratio is needed which is provided by a high metal oxide work function. B.) At the TMO/a-Si interface an efficient hole extraction into the n-type TMO must be guaranteed by band-to-band or trap-assisted tunneling. If A or/and B are not fulfilled the standard pn-junction theory is violated which results in power losses caused by insufficient hole selectivity.

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Carrier-envelope offset stable, coherently combined ytterbium-doped fiber CPA delivering 1 kW of average power

arXiv

引用

arXiv 2022年

作者： Shestaev, E. Hädrich, S. Walther, N. Eidam, T. Klenke, Arno Seres, I. Bengery, Z. Jójárt, P. Várallyay, Z. Börzsönyi, Á. Limpert, J. Active Fiber Systems GmbH Ernst-Ruska-Ring 17 Jena07745 Germany Friedrich-Schiller-Universität Jena Abbe Center of Photonics Institute of Applied Physics Albert-Einstein-Straße 15 Jena07745 Germany Helmholtz-Institute Jena Fröbelstieg 3 Jena07743 Germany ELI-ALPS ELI-HU Non-Profit Ltd. Wolfgang Sandner utca 3. SzegedH-6728 Hungary Fraunhofer Institute for Applied Optics and Precision Engineering IOF Albert-Einstein-Straße 7 Jena07745 Germany

We present a carrier-envelope offset (CEO) stable ytterbium-doped fiber chirped-pulse amplification system employing the technology of coherent beam combining and delivering more than 1 kW of average power at a pulse repetition rate of 80 MHz. The CEO stability of the system is 220 mrad rms, characterized out-of-loop with an f-to-2f interferometer in a frequency offset range of 10 Hz to 20 MHz. The high power amplification system boosts the average power of the CEO stable oscillator by five orders of magnitude, while increasing the phase noise by only 100 mrad. No evidence of the CEO noise deterioration due to coherent beam combining has been found. Low-frequency CEO fluctuations at the CPA are suppressed by a "slow loop" feedback. This is the first demonstration of a coherently combined laser system delivering an outstanding average power and a high CEO stability at the same time. Copyright © 2022, The Authors. All rights reserved.

关键词： Pulse repetition rate

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