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Getting Ready for the European Health Data Space (Ehds): The Iderha's Plan to Align with the Ehds Requirements for the Secondary Use of Health Data

SSRN

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SSRN 2024年

作者： Hussein, Rada Balaur, Irina Burmann, Anja Ćwiek-Kupczyńska, Hanna Gadiya, Yojana Ghosh, Soumyabrata Jayathissa, Prabath Katsch, Florian Kremer, Andreas Lähteenmäki, Jaakko Meng, Zhaoling Morasek, Kathrin Rancourt, Rebecca C. Satagopam, Venkata Sauermann, Stefan Scheider, Simon Stamm, Tanja A. Muehlendyck, Christian Gribbon, Philip Ludwig Boltzmann Institute for Digital Health and Prevention Salzburg Austria Luxembourg Centre for Systems Biology University of Luxembourg Luxembourg Fraunhofer Institute for Software and Systems Engineering Dortmund Germany Discovery Research Screening Port Hamburg Germany Theodor Stern Kai 7 Frankfurt60590 Germany Bonn-Aachen International Center for Information Technology University of Bonn Bonn Germany Center for Medical Data Science Medical University of Vienna Vienna Austria ITTM S.A. Luxembourg VTT Technical Research Centre of Finland Ltd Espoo Finland Clinical Modeling and Evidence Integration Sanofi CambridgeMA United States Institute of Outcomes Research Center for Medical Data Science Medical University of Vienna Austria Ludwig Boltzmann Institute for Arthritis and Rehabilitation Vienna Austria Medical School Berlin Berlin Germany Faculty Life Science Engineering FH Technikum Wien Vienna Austria TU Dortmund Dortmund Germany Johnson & Johnson Medical GmbH Norderstedt Germany

Objective: The European Health Data Space (EHDS) shapes the digital transformation of healthcare in Europe. The EHDS regulations will also accelerate the use of health data for research, innovation, policy-making, and regulatory activities for secondary use of data (known as EHDS2). The Integration of heterogeneous Data and Evidence towards Regulatory and HTA Acceptance (IDERHA) project builds one of the first pan-European health data spaces in alignment with the EHDS2 requirements, addressing lung cancer as a *** and Methods: In this study, we conducted a comprehensive review of the EHDS regulations and technical requirements for EHDS2. Mainly utilizing the results of the Joint Action Towards the European Health Data Space (TEHDAS) project to identify the framework of IDERHA’s alignment with EHDS. We also conducted an internal webinar and an external workshop with EHDS experts to share expertise on the EHDS requirements and ***: We identified the minimum-set of requirements for aligning IDERHA infrastructure with the planned EHDS regulations, including user journey, concepts, terminologies, and standards. The future IDERHA framework (i.e., platform architecture, standardization approaches, documentation, etc.) will be developed ***: The IDERHA's alignment plan with EHDS2 necessitates the implementation of three categories of standardization for: data discoverability (DCAT-AP), enabling semantics interoperability (OMOP), and health data exchange (DICOM and FHIR). The main challenge is that some standards are still being refined, e.g., the extension of the DCAT-AP (HealthDCAT-AP). Additionally, extensions to the OHDSI OMOP CMD for representing the Patient-Generated Health Data are still needed. Finally, proper mapping between standards (FHIR/OMOP) is a prerequisite for proper data ***: Collaboration, sharing lessons learned, and creating synergy among the current EHDS initiatives and projects are critical

关键词： Electronic data interchange

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Parametrized physics-informed deep operator networks for Design of Experiments applied to Lithium-Ion-Battery cells

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Journal of Energy Storage 2025年 128卷

作者： Philipp Brendel Igor Mele Andreas Rosskopf Tomaž Katrašnik Vincent Lorentz Fraunhofer Institute for Integrated Systems and Device Technology IISB 91058 Erlangen Germany University of Ljubljana Faculty of Mechanical Engineering SI-1000 Ljubljana Slovenia Institute of Electronics for Electrical Energy Storage University of Bayreuth 95440 Bayreuth Germany

Model-based state estimation of lithium-ion batteries relies on a robust, yet efficient parametrization of the underlying model under different conditions, which can be analyzed and improved through the lenses of Design-of-Experiments (DoE) methodologies. This paper presents parametrized physics-informed deep operator networks (PI-DeepONets) trained without any measured or synthetic data to predict solutions of a Single-Particle-Model for varying current profiles and electrode-specific diffusivity values. The prediction accuracy is evaluated based on three use cases representing three sets of current profiles featuring constant, smoothly time-dependent and non-smooth pulse profiles. After training PI-DeepONets, lithium concentration profiles are predicted within milliseconds achieving normalized percentage errors on the particle surfaces below 0.3% for constant or smoothly time-dependent current profiles and below 2% for non-smooth pulse profiles. The fast approximation of Fisher-Information-Matrices (FIMs) based on the trained PI-DeepONets offers additional speed-up potentials for DoE methodologies and yields a speed-up factor of 30 in the considered use case when compared to classical FIM approximation via finite differences on numerical reference solutions.

关键词： Physics-Informed Neural Network (PINN) Deep Operator Network (DeepONet) Li-ion battery modeling Single-particle model Design of Experiments

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NON-DESTRUCTIVE DEPTH RECONSTRUCTION OF AL-AL2CU LAYER STRUCTURE WITH NANOMETER RESOLUTION USING EXTREME ULTRAVIOLET COHERENCE TOMOGRAPHY

arXiv

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arXiv 2023年

作者： Abel, Johann J. Apell, Jonathan Wiesner, Felix Reinhard, Julius Wünsche, Martin Felde, Nadja Schmidl, Gabriele Plentz, Jonathan Paulus, Gerhard G. Lippmann, Stephanie Fuchs, Silvio Institute of Optics and Quantum Electronics Friedrich Schiller University Jena Max-Wien-Platz 1 Jena07743 Germany Otto Schott Institute of Materials Research Friedrich Schiller University Jena Löbdergraben 32 Jena07743 Germany Institute of Materials Science and Engineering Chemnitz University of Technology Erfenschlager Str. 73 Chemnitz09125 Germany Helmholtz Institute Jena GSI Helmholtzzentrum für Schwerionenforschung GmbH Fraunhofer Str. 8 Jena07743 Germany Indigo Optical Systems GmbH Moritz-von-Rohr-Str. 1a Jena07745 Germany Fraunhofer Institute for Applied Optics and Precision Engineering IOF Albert-Einstein-Straße 7 Jena07745 Germany Leibniz Institute of Photonic Technology e.V. Albert-Einstein Straße 9 Jena07745 Germany Laserinstitut Hochschule Mittweida University of Applied Science Mittweida Technikumplatz 17 Mittweida09648 Germany

Non-destructive cross-sectional characterization of materials systems with a resolution in the nanometer range and the ability to allow for time-resolved in-situ studies is of great importance in material science. Here, we present such a measurements method, extreme ultraviolet coherence tomography (XCT). The method is non-destructive during sample preparation as well as during the measurement, which is distinguished by a negligible thermal load as compared to electron microscopy methods. Laser-generated radiation in the extreme ultraviolet (XUV) and soft x-ray range is used for characterization. The measurement principle is interferometric and the signal evaluation is performed via an iterative Fourier analysis. The method is demonstrated on the metallic material system Al-Al2Cu and compared to electron and atomic force microscopy measurements. We also present advanced reconstruction methods for XCT which even allow for the determination of the roughness of outer and inner interfaces. © 2023, CC BY.

关键词： Fourier analysis

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Knowledge transfer and engineering methods for smart-circular product service systems

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Procedia CIRP 2021年 100卷 379-384页

作者： Friedrich Halstenberg Jasmin Dönmez Mark Mennenga Christoph Herrmann Rainer Stark Fraunhofer Institute for Production Systems and Design Technolog Pascalstr. 8-910587 Berlin Germany Institute of Machine Tools and Production Technology Chair of Sustainable Manufacturing and Life Cycle Engineering Technische Universität Braunschweig Langer Kamp 19 b 38106 Braunschweig Germany

Smart Product Service systems (Smart PSS) have the potential to contribute to a Circular Economy (CE), but in the design of these systems engineering teams often lack information and knowledge on CE strategies and processes. Against this background, the authors propose a knowledge transfer system for the design of Smart-circular PSS. The system can be used in the concept phase of the Smart PSS development process and delivers information on CE strategies via a Smart-circular PSS Lifecycle Flowchart (SCPLF) and service archetypes. These strategies can be selected, supplemented and extended according to individual user requirements. The approach was validated using an intelligent street lighting system. This paper summarizes findings from the application and provides insights into potentials and limitations for the design of Smart-circular Smart PSS.

关键词： Smart PSS, Smart-circular PSS Model-based systems engineering (MBSE) Sustainability

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Analog 2:1 Multiplexer with over 110 GHz Bandwidth in SiGe BiCMOS Technology

Analog 2:1 Multiplexer with over 110 GHz Bandwidth in SiGe B...

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BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)

作者： Tobias Tannert Markus Grözing Manfred Berroth Christian Schmidt Jung Han Choi Christoph Caspar Jonathan Schostak Volker Jungnickel Ronald Freund Holger Rücker Institute of Electrical and Optical Communications Engineering University of Stuttgart Stuttgart Germany Photonic Networks and Systems Fraunhofer Heinrich-Hertz-Institute Berlin Germany Institute of Telecommunication Systems Technische Universität Berlin Berlin Germany IHP - Leibniz-Institut für innovative Mikroelektronik Frankfurt (Oder) Germany

ISBN: (纸本)9781665439916

We report on a 2:1 analog multiplexer (AMUX) circuit in 130-nm SiGe BiCMOS technology. The technology offers HBTs with peak f T of 470 GHz and f max of 650 GHz. S-parameter measurements of the AMUX IC show a significant leap in bandwidth compared to the circuit in the previous technology generation. The linear signal path offers a 3-dB-bandwith beyond 110 GHz, while the limiting clock path has 85 GHz 3-dB-bandwidth. With this circuit two digital-to-analog converters (DACs) can be time-interleaved, to generate multi-level signals far beyond 100 GBaud with both high bandwidth and linearity.

关键词： Semiconductor device measurement Linearity Bandwidth BiCMOS integrated circuits Scattering parameters Time-domain analysis Power generation

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Risk and resilience assessment and improvement in the telecommunication industry 30

Risk and resilience assessment and improvement in the teleco...

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30th European Safety and Reliability Conference, ESREL 2020 and 15th Probabilistic Safety Assessment and Management Conference, PSAM15 2020

作者： Fehling-Kaschek, Mirjam Miller, Natalie Haab, Gael Faist, Katja Stolz, Alexander Häring, Ivo Neri, Alberto Celozzi, Giuseppe Sanchez, Jose Valera, Javier Makri, Rodoula Safety Technology and Protective Structures Fraunhofer Institute for High-Speed Dynamics Germany Electronics Division Engineering Department Leonardo Spa Italy Ericsson Telecommunicazioni S.p.A Italy Integrasys S.A Spain Institute of Communication and Computer Systems Greece

ISBN: (纸本)9789811485930

A growing number of consumer and industrial functionalities, including safety relevant and safety critical functions and services, rely on reliable and resilient telecommunication infrastructures. As telecommunication grids advance virtualization, are designed resembling the internet and are moving towards 5G, the interest to quantify their resilience with respect to major disruptions is increasing. Due to this increasing complexity of the telecom infrastructures, as attack types and often intensities are growing, their potential susceptibility and vulnerability increases. In this context, the main goal of the EU-funded H2020 project RESISTO is to provide an innovative solution for the cyber-physical resilience enhancement and holistic situation awareness for communication infrastructures. The solution consists of two main parts, the short term and the long-term components. While the short term components are designed to respond to events in real time and provide a decision support system, the long term components, mainly described herein, feature a risk and resilience analysis, based on a holistic risk and resilience management process created in previous work. Based on the inputs and a simulation grid approach, first results on the resilience quantification are presented resorting to graphical analyses and distributions for behavioral modeling. Finally, the integration of the long-term tool in the RESISTO solution and its interaction with the short term components is discussed. © ESREL2020-PSAM15 *** by Research Publishing, Singapore.

关键词： Decision support systems

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Invited: Independent Verification and Validation of Security-Aware EDA Tools and IP 21

Invited: Independent Verification and Validation of Security...

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Proceedings of the 58th Annual ACM/IEEE Design Automation Conference

作者： Benjamin Tan Siddharth Garg Ramesh Karri Yuntao Liu Michael Zuzak Abhisek Chakraborty Ankur Srivastava Omid Aramoon Qian Xu Gang Qu Adam Porter Jeno Szep Warren Savage Center for Cybsersecurity New York University Brooklyn USA Electrical and Computer Engineering Institute for Systems Research University of Maryland College Park Maryland USA Center Mid-Atlantic Fraunhofer USA Riverdale Maryland USA Applied Research Laboratory for Intelligence and Security University of Maryland College Park Maryland USA

ISBN: (纸本)9781665432740

Secure silicon requires a seamless integration of new tools, new IP, and design flows to help designers protect integrated circuits from increasingly sophisticated attacks. Independent Validation and Verification (IV&V) of this integrated technology is important to ensure that the tools actually deliver on their security claims when used by independent parties (i.e., people who were not involved in designing the tools). This work discusses the principles and approaches for IV&V of such a complex design environment, including validation of the security strength of the various hardware security techniques, such as combinational and sequential logic locking, Trojan Detection, side-channel mitigation, and blockchain-based asset management. The main challenge in running an IV&V effort is to ensure that the process provides rigorous, methodical and provable evaluation of the claims of not only the component tools and IP, but whether such an integrated environment can produce security-hardened designs by a non-security expert.

关键词： security-aware electronic design automation

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Designing optimal fast-charging infrastructure for various electric vehicle ranges in emerging-market city

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Transportation Research Interdisciplinary Perspectives 2025年 31卷

作者： Nugroho, Rizqi Ilma Gnann, Till Speth, Daniel Purwanto, Widodo Wahyu Hanafi, Jessica Soehodho, Sutanto Chemical Engineering Department Faculty of Engineering Universitas Indonesia Depok 16424 Indonesia Sustainable Energy Systems and Policy Research Cluster Universitas Indonesia Depok 16424 Indonesia Fraunhofer Institute for Systems and Innovation Research ISI Breslauer Strasse 48 Karlsruhe 76139 Germany PT. Life Cycle Indonesia Jakarta Barat DKI Jakarta 11620 Indonesia Civil Engineering Department Faculty of Engineering Universitas Indonesia Depok 16424 Indonesia Transport Research Group Civil Engineering Faculty of Engineering Universitas Indonesia Depok 16424 Indonesia

This study highlights the crucial role of Battery Electric Vehicles (BEVs) in decarbonizing transportation systems in emerging markets, focusing on the challenge posed by limited charging infrastructure, which hampers BEV adoption. It proposes a flow-based optimization model that incorporates multiple driving ranges, multi-period assessment, and capacitated charging stations that based on a queuing model to determine the optimal fast-charging infrastructure for a densely populated emerging-market city, specifically the Greater Jakarta Area. Given a widespread access to home charging, this study focuses on meeting the en-route charging demand of long-distance drivers. The proposed model shows that endogenously integrating variations in BEV ranges provides more detailed distributions of station locations, all while maintaining reasonable solution times. Findings indicate an optimal ratio of 218 BEVs per fast charger by 2050, consisting of 372 sites equipped with approximately 62,800 chargers. Over half of these sites require more than 100 chargers to be installed and are mainly positioned along highway corridors. Given the high population density and limited land availability in the area, this study also explores profitability and land utilization aspects, offering strategic guidance to plan the rollout of charging infrastructure in regions with similar characteristics. © 2025 The Author(s)

关键词： BEV Charging infrastructure Emerging market Greater Jakarta Area Optimization

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Study and characterization of GaN MOS capacitors: planar versus trench topographies

arXiv

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arXiv 2022年

作者： Mukherjee, K. De Santi, Carlo You, S. Geens, K. Borga, M. Decoutere, S. Bakeroot, B. Diehle, P. Altmann, F. Meneghesso, G. Zanoni, E. Meneghini, M. The University of Padova Department of Information Engineering Via Gradenigo 6/B Padova35131 Italy University of Padova Department of Information Engineering Via Gradenigo 6/B Padova35131 Italy Imec Kapeldreef 75 Heverlee Belgium CMST Imec Ghent University Technologiepark 126 Ghent9052 Belgium Fraunhofer Institute for Microstructure of Materials and Systems IMWS Walter-Huelse-Strasse 1 Halle06120 Germany

Developing high quality GaN/dielectric interfaces is a fundamental step for manufacturing GaN vertical power transistors. In this paper, we quantitatively investigate the effect of planar etching treatment and trench formation on the performance of GaN-based MOS (metal oxide semiconductor) stacks. The results demonstrate that (i) blanket etching the GaN surface does not degrade the robustness of the deposited dielectric layer;(ii) the addition of the trench etch, while improving reproducibility, results in a decrease of breakdown performance compared to the planar structures. (iii) for the trench structures, the voltage for a 10 years lifetime is still above 20 V, indicating a good robustness. (iv) To review the trapping performance across the metal-dielectric-GaN stack, forward-reverse capacitance-voltage measurements with and without stress and photo-assistance are performed. Overall, as-grown planar capacitors devoid of prior etching steps show lowest trapping, while trench capacitors have higher interface trapping, and bulk trapping comparable to the blanket etched capacitors. (v) The nanostructure of the GaN/dielectric interface was characterized by high resolution scanning transmission electron microscopy (HR-STEM). An increased roughness of 2-3 monolayers at the GaN surface was observed after blanket etching, which was correlated to the higher density of interface traps. The results presented in this paper give fundamental insight on how the etch and trench processing affects the trapping and robustness of trench-gate GaN-MOSFETs, and provide guidance for the optimization of device performance. © 2022, CC BY-NC-ND.

关键词： Gallium nitride

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Correction: MBFair: a model-based verification methodology for detecting violations of individual fairness

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Software and systems Modeling 2025年第1期24卷 137-137页

作者： Ramadan, Qusai Konersmann, Marco Ahmadian, Amir Shayan Jürjens, Jan Staab, Steffen University of Koblenz Koblenz Germany RWTH Aachen University Aachen Germany Fraunhofer-Institute for Software and Systems Engineering ISST Dortmund Germany Universität Stuttgart Stuttgart Germany University of Southampton Southampton UK

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