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Development of a Sensor system for Load Monitoring in the Electrical Grid to Support E-Mobility Charging

Development of a Sensor System for Load Monitoring in the El...

引用

Metrology for Automotive (MetroAutomotive), IEEE International Workshop on

作者： Felix Essingholt Linda Cousin Gerd vom Bögel Thorben Grenter Anton Grabmaier Wireless Sensors & Systems Fraunhofer Institute for Microelectronic Circuits and Systems IMS Duisburg Germany Smart System Design Fraunhofer Institute for Microelectronic Circuits and Systems IMS Duisburg Germany Business Unit Industry Fraunhofer Institute for Microelectronic Circuits and Systems IMS Duisburg Germany Department of Electronic Components and Circuits University of Duisburg-Essen Duisburg Germany

ISBN: (数字)9798350384987

ISBN: (纸本)9798350384994

Continuing the conceptual work published in [1] from the Energy ECS [2] subproject for the monitoring of electrical distribution grids, an initial design for a retrofittable autonomous current sensor system for the low-voltage distribution network is presented in this paper. The sensor system is capable of measuring the currents and their phase in all conductors of a 3-phase energy grid of cables going into or out of distribution cabinets and is intended for monitoring loads and detecting overloads due to extensive charging of electrical vehicles (EV). Additionally, electrodes for monitoring the voltage have been designed to provide a rudimentary voltage measurement for the phase calculation of the current. The system has been developed to be self-sufficient with inductive energy harvesting, providing a maintenance free solution. For this, an overcurrent and over voltage protection for the electronics was implemented, according to the requirements discovered in our previous works. In this paper, the concepts and designs for the autonomous current sensor are described and first results of its performance in the laboratory are shown.

关键词： Low voltage Load monitoring Phase measurement Energy measurement Metrology Sensor systems Smart grids

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Implementation of an Integrated Differential Readout Circuit for Transistor-Based Physically Unclonable Functions

Implementation of an Integrated Differential Readout Circuit...

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Austrian Workshop on microelectronics (Austrochip)

作者： Benjamin Willsch Kai-Uwe Müller Qi Zhang Julia Hauser Stefan Dreiner Alexander Stanitzki Holger Kappert Rainer Kokozinski Holger Vogt Fraunhofer Institute for Microelectronic Circuits and Systems (IMS) Duisburg Germany Chinese Academy of Sciences Shanghai Institute of Micro-system and Information Technology Shanghai China University of Chinese Academy of Sciences Beijing China Department of Electronic Components and Circuits University of Duisburg-Essen Duisburg Germany

Physically Unclonable Functions (PUFs) offer enticing possibilities to incorporate hardware-based security on semiconductor device level. In order to make efficient use of PUF functionality in lightweight cryptographic applications, a low-overhead implementation in terms of chip area and power consumption is required. In this paper a fully differential readout circuit is proposed that allows the generation of multiple bits from selected pairs of PUF-elements. The IC-design and working principle are explained on basis of a critically-sized nMOS transistor array serving as a PUF-primitive. First results obtained from circuit simulations and wafer-level measurements of 30 PUF-instances fabricated in a 0.35 μm CMOS technology are presented. Evaluation of the intraand inter-Hamming distance with average values of 9.42% and 49.46%, respectively, shows that device identification based on the extracted keys is feasible. In order to increase the number of unique keys obtainable for each PUF-instance layout improvements in form of additional row select connections are proposed.

关键词： Transistors Logic gates Standards Quantization (signal) CMOS technology Resistors Monte Carlo methods

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CMOS process enhancement for high precision narrow linewidth applications

CMOS process enhancement for high precision narrow linewidth...

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European Conference on Solid-State Device Research (ESSDERC)

作者： Frank Hochschulz Uwe Paschen Holger Vogt Fraunhofer Institute of Microelectronic Circuits and System Duisburg Germany

During the last years CMOS technologies found widespread use in the development and fabrication of optical sensors and imagers. However, during the development of CMOS photo diodes for special applications requiring the detection of radiation with a small spectral linewidth various aspects have to be considered that are negligible for photo diodes employed in common imaging applications. One very important aspect is the influence of interference effects due to the dielectric stack that covers the photo diodes in every CMOS process. This results in a dramatic modulation of the electronic signal as a function of the wavelength, stack thickness and spectral width of the impinging radiation. The uncertainties introduced by these oscillations disfavor standard CMOS imaging solutions for small spectral width applications. In common imaging applications with a larger spectral linewidth these modulations are not visible due to the convolution of the spectral sensitivity with the incoming spectral profile. This paper describes a CMOS process addition that can be applied to photo diodes to significantly reduce the sensitivity modulations by etching the dielectric stack in photo active areas. Using this approach the sensitivity modulations due to interference effects have been nearly eliminated for wavelengths above 300 nm. This enables the use of standard CMOS processes for spectroscopy or special imaging applications like laser illumination.

关键词： Silicon Wavelength measurement Sensitivity CMOS process Oscillators Dielectrics Geometry

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Large full-well capacity stitched CMOS image sensor for high temperature applications

Large full-well capacity stitched CMOS image sensor for high...

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European Conference on Solid-State circuits (ESSCIRC)

作者： Daniel Durini Frank Matheis Christian Nitta Werner Brockherde Bedrich J. Hosticka Fraunhofer Institute of Microelectronic Circuits and System Duisburg Germany

A novel CMOS pixel architecture is presented, which fulfills the need for acquisition of very high photon fluxes at high temperatures. A buried photodiode based pixel structure was analysed in detail, and then applied to fabricate the 256 × 256 large area imager sensor in a standard 0.5μm CMOS process using mask reticle stitching.

关键词： Pixel Photodiodes Temperature measurement Dark current Temperature sensors Computer architecture Noise

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Lateral Drift-Field Photodetector for high speed 0.35µm CMOS imaging sensors based on non-uniform lateral doping profile: Design, theoretical concepts, and TCAD simulations

Lateral Drift-Field Photodetector for high speed 0.35µm CMO...

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Ph.D. Research in microelectronics and Electronics (PRIME)

作者： Rana Mahdi Johannes Fink Bedrich J. Hosticka Department of Optical Sensor Systems Fraunhofer Institute for Microelectronic Circuits and System (IMS) Duisburg Germany

A novel photodetector concept for high charge transfer speed and low image lag is presented. The key feature of the so-called Lateral Drift-Field Photodetector (LDPD) is a lateral electric drift field inside the photoactive area of the device. This results in a significant acceleration of the charge collection compared to conventional diffusion based detectors and, therefore, this device is an ideal candidate for high speed applications like 3D Time-of-Flight imaging. Furthermore, the LDPD concept shows a superior noise performance as the charge collection node is decoupled from the readout node. The LDPD device was developed in a standard 0.35μm CMOS process with only one additional mask step being necessary in order to implement the lateral doping gradient.

关键词： Electric potential Pixel Imaging Electrostatics CMOS integrated circuits Logic gates Photodetectors

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Evaluation of materials for high temperature IC packaging

Evaluation of materials for high temperature IC packaging

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International Workshop on Thermal Investigation of ICs and systems (THERMINIC)

作者： Robert Klieber Renee Lerch Fraunhofer Institute of Microelectronic Circuits and System Duisburg Germany

Fast decrease of device dimensions, rapid growth of the number of elements per integrated circuit device (IC) and the increasing amount of interconnections between the chip and the substrate lead to a more complex design and production of the ICs and to higher demands towards packaging technology as well. This is especially true in the field of high temperature electronics with operating temperatures of up to 250degC. We present an evaluation of materials for both the adhesive and the encapsulant for packaging of high temperature ICs for this temperature range. Among the available materials only glass-based formulations could withstand extended periods of heat and substantial numbers of temperature cycles. In addition, samples of high temperature CMOS ICs (capacitive pressure sensors and EEPROMs) have been successfully assembled using these materials.

关键词： Integrated circuit packaging Temperature sensors Electronics packaging Temperature distribution Integrated circuit interconnections Production Integrated circuit technology Capacitive sensors EPROM Assembly

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Performance considerations for photogate based active pixel sensors

Performance considerations for photogate based active pixel ...

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Ph.D. Research in microelectronics and Electronics (PRIME)

作者： Andreas Spickermann Bedrich J. Hosticka Anton Grabmaier Fraunhofer Institute of Microelectronic Circuits and System Duisburg Germany

Photogate based active pixel sensors (PG APS) are often used in CMOS imaging. In advanced applications (e.g. high-speed imaging or time-of-flight distance measurements) the pixel performance requirements are high, especially as far as the optical sensitivity of the PG and the transfer and readout speed of photogenerated charge carriers are concerned. In this contribution we investigate the electrical and optical performances of different PG based pixel configurations fabricated in the 0.35 ¿m CMOS process available at the fraunhofer IMS. Finally, we propose a high resistivity polysilicon gate based pixel structure to be applied in 3-D time-offlight (ToF) measurements, that yields an enhanced charge transfer speed.

关键词： Pixel CMOS image sensors Optical imaging Optical sensors Distance measurement Charge carriers High speed optical techniques CMOS process Conductivity Current measurement

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Highly sensitive UV-enhanced linear CMOS photosensor

Highly sensitive UV-enhanced linear CMOS photosensor

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European Conference on Solid-State circuits (ESSCIRC)

作者： Daniel Durini Erol Ozkan Werner Brockherde Bedrich J. Hosticka Fraunhofer Institute of Microelectronic Circuits and System Duisburg Germany

This contribution describes a highly sensitive UV-enhanced linear CMOS photosensor which exhibits very low noise. The sensor features on-chip readout and control electronics, global synchronous shutter, programmable spectral responsivity, clock-independent variable integration time, two different acquisition modes, selectable region-of-interest readout, and a binning capability. The device has been designed and fabricated in the 0.5 mum standard CMOS process available at the fraunhofer IMS.

关键词： Photodetectors CMOS image sensors CMOS process Photodiodes Testing CMOS technology Optical sensors Silicon Thyristors Software tools

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Modeling of high-voltage NMOS transistors using extended BSIM3 model

Modeling of high-voltage NMOS transistors using extended BSI...

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International Conference on Mixed Design of Integrated circuits and systems (MIXDES)

作者： J. Pieczynski I. Doncov Fraunhofer Institute of Microelectronic Circuits and System Duisburg Germany

This paper presents a procedure for modeling and electrical parameter extraction of high-voltage NMOS transistors from the 1.2um CMOS/pressure sensor process. The well known and very robust Berkeley BSIM3 model was applied as a basis for modeling. Unfortunately BSIM3 does not include such specific high-voltage effects as drain extension, quasi-saturation and self-heating. In order to account for these effects in the modeling procedure, sub-circuit extension was implemented. All parameters were extracted with the IC-CAP automated test system. The model was implemented in SPECTRE and validated by simulating single devices and a ring oscillator.

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First results of a study on a completely implanted retinal prosthesis in blind humans

First results of a study on a completely implanted retinal p...

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IEEE SENSORS

作者： Christian Koch Wilfried Mokwa Michael Goertz Peter Walter Institute of Materials in Electrical Engineering 1 RWTH Aachen University Aachen Germany Department of Ophthalmology Aachen University Hospital RWTH Aachen University Aachen Germany Fraunhofer Institute of Microelectronic Circuits and System Duisburg Germany

A wireless epiretinal retina implant system, capable of stimulating the retinal ganglion cells in blind Retinitis Pigmentosa (RP) patients, was developed. The prosthesis itself is completely implanted into the eyeball, with no cable crossing the eyepsilas wall. Data and energy are provided by inductive coupling. The implant is based on a flexible polyimide tape with an integrated receiver coil, stimulation electrodes and microchips. The system was implanted into six legally blind patients for four weeks. All patients reported on visual sensations, evoked by electrical stimulation of their retina. The required stimulation thresholds were found to be very low. Implantation and explantation surgery were performed without complications. The implant was well tolerated for the duration of four weeks.

关键词： Retina Prosthetics Humans Implants Pigmentation Polyimides Coils Electrodes Electrical stimulation Surgery

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