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A low latency time CORDIC algorithm with increased parallelism

A low latency time CORDIC algorithm with increased paralleli...

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IEEE International Symposium on circuits and systems (ISCAS)

作者： D. Timmermann H. Hahn B. Hosticka Fraunhofer Institute of Microelectronic Circuits and System Duisburg Germany

Several methods are presented for increasing the speed of the CORDIC algorithm. First, an improved method is developed which guarantees a constant scale factor when using redundant addition schemes. Then an architecture with increased parallelism is described which considerably reduces, in theory and practice, the CORDIC latency time with a reduced amount of hardware.< >

关键词： Delay Parallel processing Equations Inspection microelectronics circuits and systems Computer architecture Hardware Iterative algorithms Vectors

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Low-drift gas sensor with on-chip instrumentation

Low-drift gas sensor with on-chip instrumentation

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International Conference on Solid State Sensors and Actuators (TRANSDUCERS)

作者： U. Schoneberg H.G. Dura B.J. Hosticka W. Mokwa Fraunhofer Institute of Microelectronic Circuits and System Duisburg Germany

A hydrogen gas sensor device with an on-chip switched capacitor readout circuit is presented. This technique permits AC operation of capacitive gas sensors. It was demonstrated that on-chip analog instrumentation not ... 详细信息

关键词： Gas detectors Instruments Voltage MOS capacitors Capacitance Pulse amplifiers Switched capacitor circuits Palladium Electrodes Leakage current

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Design and Applications of Tunable Analog BiCMOS circuits

Design and Applications of Tunable Analog BiCMOS Circuits

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European Conference on Solid-State circuits (ESSCIRC)

作者： J. Fichtel B.J. Hosticka W. Schardein Fraunhofer Institute of Microelectronic Circuits and System Duisburg Germany

In this communication we will discuss design, merits, and applications of tunable analog BiCMOS circuits. Although the BiCMOS technology offers higher design flexibility due to presence of more types of active devices than the standard CMOS or bipolar technologies, it is also costlier. Hence, its use can be justified only if the salient features of BiCMOS are taken adequately advantage of. The presented work will discuss one possible approach that cannot be easily and economically duplicated in other technologies.

关键词： Tunable circuits and devices BiCMOS integrated circuits CMOS technology Frequency Voltage Filters Switched capacitor circuits Power dissipation CMOS digital integrated circuits CMOS analog integrated circuits

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Module synthesis for finite state machines

Module synthesis for finite state machines

引用

European Conference on Design Automation

作者： A. Kuehlmann Y. Manoli Ilmenau University of Technology Germany Fraunhofer Institute of Microelectronic Circuits and System Duisburg Germany

The authors present a new layout style for automatic synthesis of finite state machines which is suitable for full custom as well as sea-of-gate layouts. It is based on a combined use of slice techniques, which result in a compact layout and a matrix layout style to ensure the flexibility of this approach. For the layout optimization, multiple row folding has to be performed, for which a genetic optimization algorithm is presented. Some experimental results are given.< >

关键词： Automata Logic testing microelectronics circuits and systems Libraries Timing Circuit synthesis Genetics Routing Programmable logic arrays

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SIMOX-devices for analog circuits

SIMOX-devices for analog circuits

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IEEE SOI-3D-Subthreshold microelectronics Technology Unified Conference (S3S)

作者： G. Badenes G. Burbach H. Gassel H. Vogt Fraunhofer Institute of Microelectronic Circuits and System Duisburg Germany Centro Nacional de Microelectronica CSIC Bellaterra Spain

It is noted that, in order to run analog circuits on SIMOX (separation by implanted oxygen), care has to be taken concerning the kink-effect, the BJT (bipolar junction transistor) breakdown, the single-transistor latch, and, for some applications, the noise of the devices. The authors report results of the different approaches to deal with these items. The demonstrator for an analog circuit is an operational amplifier, which is used as a basic element of a switch capacitor circuit. The influence of LDD (lightly doped drain) structures and low doped drift regions at the drain contact on the devices was investigated. Lateral DMOS-FETs have been examined. The device and the circuits have been tested in an elevated temperature range above 100 degrees C.< >

关键词： Analog circuits Switches Circuit testing Bipolar transistor circuits Electric breakdown Latches Circuit noise Operational amplifiers Switching circuits Switched capacitor circuits

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Multisensor Catheter For Invasive Measuremt Of Blood Parameters

Multisensor Catheter For Invasive Measuremt Of Blood Paramet...

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Annual International Conference of the IEEE Engineering in Medicine and Biology Society (EMBC)

作者： Y. Manoli J. Eichholz M. Kandler N. Kordas A. Langerbein W. Mokwa M. Fahnle F.F. Liebscher Fraunhofer Institute of Microelectronic Circuits and System Duisburg Germany Dr. Raymond Glocker GmbH Institute of Medical Technology Munster Germany

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Interface characterization by C(V) measurements of three-terminal MOSOS capacitors

Interface characterization by C(V) measurements of three-ter...

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IEEE SOI-3D-Subthreshold microelectronics Technology Unified Conference (S3S)

作者： H.B. Abel G. Badenes Department of Electron Devices and Circuits University of Duisburg-Essen Duisburg Germany Fraunhofer Institute of Microelectronic Circuits and System Duisburg Germany Centro Nacional de Microelectróica CSIC Bellaterra Spain

It is shown that with knowledge of quantities, such as front interface charges, film doping concentration, and film thickness, the back interface properties can be determined easily by using the C(V) characteristics for a depleted back interface, since the charges located at the boundary between silicon film and buried oxide now have a strong influence on the capacitance. To illustrate this quantitatively, the simulated front and back surface potentials for a MOSOS capacitor with specified properties and a silicon film doping concentration of 5*10/sup 16/ cm/sup -3/ are shown as functions of the front gate voltage V/sub G/. Typical values for the back interface charge density (5*10/sup 11/ to 1*10/sup 12/ cm/sup -2/) result in a positive offset of the back surface potential thus giving rise to the onset of strong inversion at the back interface, when the gate voltage reaches V/sub T1/ and before the front channel is formed at V/sub G/=V/sub T2/. Extraction of the back interface charge density can be performed by a simple data fitting algorithm in conjunction with an accurate numerical model.< >

关键词： Capacitors Silicon Semiconductor films Virtual colonoscopy Parasitic capacitance Electron devices Capacitance measurement Doping Voltage Surface fitting

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CMOS integrated capacitive pressure transducer with on-chip electronics and digital calibration capability

CMOS integrated capacitive pressure transducer with on-chip ...

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International Conference on Solid State Sensors and Actuators (TRANSDUCERS)

作者： U. Schoneberg F.V. Schnatz W. Brockherde P. Kopystynski T. Mehlhorn E. Obermeier H. Benzel Fraunhofer Institute of Microelectronic Circuits and System Duisburg Germany Microperipheric Technology Technical University Berlin Berlin Germany Institute for Network and Systems Theory University of Stuttgart Stuttgart Germany

A capacitive pressure sensor with CMOS switched-capacitor circuitry for on-chip signal conditioning is introduced. It features differential generation and treatment of pressure-induced capacitance changes to suppress various parasitic effects. A digital calibration capability is provided in the form of a programmable capacitor array. The fabrication of the transducer is largely congruent with a standard n-well CMOS process. The authors explain the functioning of the circuitry and its implications for the sensor design and present experimental results obtained in testing the various components of the transducer.< >

关键词： Transducers Calibration Capacitive sensors Sensor phenomena and characterization Photonic band gap Equations Zero voltage switching Switched capacitor circuits Circuit testing Switching circuits

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A CMOS-Readout-Amplifier For Instrumentation Applications

A CMOS-Readout-Amplifier For Instrumentation Applications

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European Conference on Solid-State circuits (ESSCIRC)

作者： U. Schoeneberg B.J. Hosticka F.V. Schnatz Fraunhofer Institute of Microelectronic Circuits and System Duisburg Germany

In the recent years enormous progress has been made in integration of sensors and electronics on the same silicon substrate. So a strong demand for incorporated instrumentation amplifiers has arisen. In this paper we present a fully integrated CMOS version of such an amplifier using switched capacitor techniques. The amplifier system provides differential input capability, programmable amplification, clock generation, and low-pass filtering on the chip. The output signal is continuous in time and the system can be used without any special precautions necessary for sampled-data circuits. Emphasis was laid on high PSRR, low noise and offset, low harmonic distortion, and small amplification error. For covering a large field of applications only slightly different realizations can be used for capacitive sensors as well as for resistive sensor bridges.

关键词： Instruments Capacitive sensors Silicon Capacitors Differential amplifiers Clocks Low pass filters Filtering Sampled data circuits Circuit noise

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The art of analog circuit design in a digital VLSI world

The art of analog circuit design in a digital VLSI world

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IEEE International Symposium on circuits and systems (ISCAS)

作者： B.J. Hosticka W. Brockherde Fraunhofer Institute of Microelectronic Circuits and System Duisburg Germany

A survey is presented of issues and problems of analog design in VLSI. Since today's VLSI is still largely digital, the analog design plays a rather peripheral role. Due to an increasing tendency towards single-chip systems, however, the inclusion of analog circuits in VLSI is becoming more and more important. Factors that dictate the choice of analog circuit techniques are identified. Design issues and crosstalk are discussed. Problems that remain to be solved are examined.< >

关键词： Subspace constraints Analog circuits Very large scale integration Signal processing Operational amplifiers CMOS technology Switching circuits Circuit noise Digital circuits BiCMOS integrated circuits

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