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Intraocular epiretinal prosthesis to restore vision in blind humans

Intraocular epiretinal prosthesis to restore vision in blind...

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Annual International Conference of the IEEE Engineering in Medicine and Biology Society (EMBC)

作者： W. Mokwa M. Goertz C. Koch I. Krisch H.-K. Trieu P. Walter Institute of Materials in Electrical Engineering RWTH Aachen University Aachen Germany Fraunhofer Institute of Microelectronic Circuits and System Duisburg Germany Institute of Materials in Electrical Engineering I RTWH Aachen University Aachen Germany Department of Ophthalmology RWTH Aachen University Aachen Germany

Visual sensations in blind patients suffering from retinal degenerations may be restored by electrical stimulation of retinal neurons using implantable microelectrode arrays. The EPI-RET-3 project was initiated to evaluate a wireless intraocular retinal implant system for human use in terms of safety and efficiency. The implant is a remotely controlled fully intraocular prosthesis consisting of a receiver and a stimulator module. The stimulator is placed onto the retina's surface. Data and energy are transmitted via an inductive link from outside the eye to the implant. The EPI-RET-3 device was implanted into six legally blind patients with Retinitis Pigmentosa (RP) for a period of four weeks. The surgery was performed without complications. The implants were activated on days 7, 14 and 27 after implantation. All patients reported visual sensations such as dots, arcs, or lines of different colours and intensities. The required stimulation thresholds were found to be very low. Implantation of the wireless EPI-RET-3 device is safe and the system is suitable to elicit visual sensations in blind RP patients. Major problems in the design and fabrication of a prosthesis for artificial vision could be solved in this approach.

关键词： Retina Implants Electrodes Wireless communication Receivers Transmitters Visualization

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Analog circuits for sensors

Analog circuits for sensors

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European Conference on Solid-State Device Research (ESSDERC)

作者： Bedrich J. Hosticka Fraunhofer Institute of Microelectronic Circuits and System Duisburg Germany

This contribution is devoted to CMOS analog circuit design for integrated sensor systems. While today complex sensor signal processing tends to be implemented in digital domain, analog circuits still play a crucial role in sensor signal acquisition due to analog nature of sensory signals. Though sensor front-ends frequently employ analog circuits, e.g. for sensor signal conditioning and conversion, generation of bias and reference voltages and currents, and system interfacing, the most important circuit here -for both, on-and off-chip sensors -is the sensor readout, since it directly interfaces the sensor.

关键词： Analog circuits Sensor systems Temperature sensors CMOS technology Signal processing Sensor arrays Optical sensors Chemical sensors Sensor systems and applications Signal resolution

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Model Parameter Extraction for the High Voltage SOI-Process using BSIMSOI3 Model and ICCAP

Model Parameter Extraction for the High Voltage SOI-Process ...

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International Conference on Mixed Design of Integrated circuits and systems (MIXDES)

作者： J. Pieczynski T. Gneiting Fraunhofer Institute of Microelectronic Circuits and System Duisburg Germany Admos GmbH Germany

This paper presents a procedure for electrical parameter extraction of high voltage SOI MOS transistors. Several types of NMOS and PMOS fully depleted SOI devices were measured and modelled in a voltage ranging up to 30V. The standard Berkeley BSIMSOI3 model with ICCAP software was applied as a basis for modelling work. In order to increase the maximum operation voltage of the MOSFETs, a number of devices were designed and fabricated with additional drain extension structures. However, this resulted in problematic parasitic effects, such as back gate control of the drain extension and drain current quasi-saturation. In order to account for these effects in the modelling procedure, special sub-circuits containing transistors, resistors and voltage sources were implemented.

关键词： Parameter extraction Voltage MOSFETs circuits Thermal resistance CMOS technology microelectronics MOS devices Resistors Process design

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Theoretical and practical minimum of the power Consumption of 3 ADCs in SC technique

Theoretical and practical minimum of the power Consumption o...

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European Conference on Circuit Theory and Design, ECCTD

作者： B. Bechen T. v. d. Boom D. Weiler B. J. Hosticka Fraunhofer Institute for Microelectronic Circuits and Systems Signal Processing and System Design Duisburg Germany

In this paper the theoretical and practical minimum of the power consumption is investigated for 3 ADC architectures, which are predestined for low conversion speed and applications in low-power sensor readout circuits. The analysis is made for the switched capacitor versions of the SAR ADC, cyclic ADC and sigma-delta modulator. The theoretical limit of the power efficiency is investigated by a commonly used figure of merit (FOM). As a case study two low-power ADCs were designed and fabricated. In order to compare ADCs fabricated in different technologies a technology-independent FOM is introduced.

关键词： Energy consumption Capacitors CMOS technology Voltage circuits Batteries Power supplies Switches Sampling methods Frequency estimation

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Photodetector structures for standard CMOS imaging applications

Photodetector structures for standard CMOS imaging applicati...

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Ph.D. Research in microelectronics and Electronics (PRIME)

作者： Daniel Durini Bedrich J. Hosticka Department Microelectronic Systems (MES) Fraunhofer IMS University of Duisburg-Essen Duisburg Germany Department Signal Processing and System Design (SYS) Fraunhofer Institute of Microelectronic Circuits and System Duisburg Germany

In this investigation we show how a standard 0.5 mum twin-well CMOS process can be used for CMOS imaging. The process features a single-polysilicon layer, as well as three metal layers, and it is LOCOS based. We discuss various issues affecting photodetection tasks in CMOS imaging applications and present an extensive study of possible photodetector structures. Also, we propose a novel CMOS imaging pixel structure, which exceeds the standard CMOS 2-D imaging performance.

关键词： Photodetectors CMOS process Surface waves Thyristors Capacitance CMOS technology Silicon Epitaxial layers P-n junctions Reflectivity

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MOS-Capacitor based CMOS time-compression photogate pixel for time-of-flight imaging

MOS-Capacitor based CMOS time-compression photogate pixel fo...

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European Conference on Solid-State circuits (ESSCIRC)

作者： Daniel Durini Werner Brockherde Bedrich J. Hosticka Department Microelectronic Systems University of Duisburg-Essen Duisburg Germany Department Signal Processing and System Design (SYS) Fraunhofer Institute of Microelectronic Circuits and System Duisburg Germany

In this investigation we study different readout possibilities if using a metal-oxide-semiconductor capacitor (MOS-C) as a photodetector in a standard 0.5 mum twin-well CMOS process. The pixel readout principles are intended to be used in high-speed near-infra red (NIR) 3-D CMOS imaging, based on time-of-flight (TOF) measurements. We discuss various issues and present an extensive study of the MOS-C based photodetector structure. Also, we propose a novel CMOS imaging pixel: the time-compression charge-injection photogate (CMOS TC-PG), fabricated in the same process.

关键词： Pixel CMOS process Photodetectors Pulse measurements Shape measurement CMOS technology microelectronics Signal processing Capacitors Volume measurement

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SOI pixel detector based on CMOS time-compression charge-injection

SOI pixel detector based on CMOS time-compression charge-inj...

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European Conference on Circuit Theory and Design, ECCTD

作者： Daniel Durini Werner Brockherde Bedrich J. Hosticka Department Microelectronic Systems (MES) University of Duisburg-Essen Duisburg Germany Department Signal Processing and System Design (SYS) Fraunhofer Institute of Microelectronic Circuits and System Duisburg Germany

Concept and experimental results obtained from a pixel detector based on CMOS time-compression charge- injection-devices (TC-CID) with a huge internal photocurrent amplification (-104), fabricated in CMOS silicon-on-insulator (SOI) technology are presented. Here, the readout circuitry is fabricated on highly-doped, 200 nm thick SOI film, while the photogate (PG) detector is fabricated on higher-resistivity handle wafer. The latter, together with the 30 V biasing possibilities enhances the quantum efficiency, especially for irradiations with wavelengths in the near-infra-red (NIR) part of the spectra.

关键词： Detectors CMOS process CMOS technology Thyristors Substrates Voltage circuits Photodetectors Photoconductivity Silicon on insulator technology

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Noise-power Trade-off In CMOS-G/sub M/-C Channel Select Filters

Noise-power Trade-off In CMOS-G/sub M/-C Channel Select Filt...

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International Conference on Mixed Design of Integrated circuits and systems (MIXDES)

作者： N. Christoffers T. Fedtschenko T. Stucke R. Kokozinski S. Kolnsberg Fraunhofer Institute of Microelectronic Circuits and System Germany

The channel selection in direct-downconversion receivers can be performed using analog or digital filters or a combination of both. For an appropriate partitioning in early design phase knowledge about the power-performance tradeoffs of the building blocks is necessary without knowledge about too many implementation details. This paper proposes a method to carry out the noise-power trade-off of analog G m -C filters. For a particular example where the demand on adjacent channel rejection is very high it is shown that the analog solution is very promising when compared to the digital channel selection

关键词： Filters Energy consumption Linearity Transconductors Voltage Transconductance Sampling methods Frequency Bandwidth circuits

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A Very Low-Power CMOS 11-b Cyclic A/D Converter with Mismatch Compensation

A Very Low-Power CMOS 11-b Cyclic A/D Converter with Mismatc...

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Ph.D. Research in microelectronics and Electronics (PRIME)

作者： B. Bechen T. v. d. Boom D. Weiler B.J. Hosticka Signal Processing and System Design Fraunhofer Institute of Microelectronic Circuits and System Duisburg Germany

A 11-b CMOS cyclic A/D converter with very low-power consumption is presented. A method to reduce the effect of component mismatch is introduced, which significantly improves the accuracy. The improvement has been con... 详细信息

关键词： Voltage Signal processing CMOS process circuits Batteries Implants Power supplies Capacitors Clocks Switches

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A 64×8 Pixel 3-D CMOS Time Of Flight Image Sensor for Car Safety Applications

A 64×8 Pixel 3-D CMOS Time Of Flight Image Sensor for Car S...

引用

European Conference on Solid-State circuits (ESSCIRC)

作者： O. Elkhalili O.M. Schrey W. Ulfig W. Brockherde B.J. Hosticka P. Mengel L. Listl Fraunhofer Institute of Microelectronic Circuits and System Duisburg Germany Siemens AG Munich Germany

For car safety applications a 64times8 pixel 3D CMOS image sensor based on the time-of-flight principle (TOF) has been developed and successfully tested. The illumination source used is a pulse modulated (PM) class 1 laser operating at 910nm wavelength. The sensor employs the so called "multiple double short time integration (MDSI)", which compensates for sensor as well as scene nonidealities, like reflectance variations, and it suppresses the effects of background illumination. An optimised pixel circuit presented in this paper enables the detection of objects with a distance resolution of 2.2mm in the range up to 20m. This result has been achieved by reducing the noise equivalent power (NEP) of the sensor in comparison to previous approaches. The chip has been realized in a 0.5mum n-well standard CMOS process. The pixel pitch is 130mum with a fill factor of about 100%

关键词： Pixel CMOS image sensors Image sensors Aerospace safety Vehicle safety Lighting Pulse modulation Testing Optical pulses Layout

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