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European Conference on Solid-State circuits (ESSCIRC)

作者： Christian Baumer Stefan Eick Roger Steadman Gereon Vogtmeier Michael Gnade Armin Kemna Dirk Weiler Philips Research Laboratories Aachen Germany Fraunhofer Institute of Microelectronic Circuits and System Duisburg Germany

A multichannel SigmaDelta-type analog-to-digital converter has been designed for data readout in CT scanners. A test-structure with a 4 times 4 photodetector array has been fabricated in a 0.8 mum CMOS process. Aiming at an integrated solution towards a 'digital pixel', each sensor element is formed by a photodiode and a third-order SigmaDelta-modulator. The switched-capacitor circuitry has been realized as a fully differential-path design. Test measurements have been carried out and analyzed in terms of dynamic range and noise. Simulations on layout level have been performed. A digital post-processing scheme has been devised for decimation and low-pass filtering of the modulator outputs

关键词： Delta-sigma modulation Computed tomography X-ray imaging Circuit testing Analog-digital conversion Photodetectors CMOS process Photodiodes Switched capacitor circuits Noise measurement

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The Impact Of Technology Parameters On The Performance Of Common-gate LNAs

The Impact Of Technology Parameters On The Performance Of Co...

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International Conference on Mixed Design of Integrated circuits and systems (MIXDES)

作者： T. Stucke N. Christoffers R. Kokozinski S. Kolnsberg B.J. Hosticka Department of Circuit Design and Wireless Systems SDS Fraunhofer Institute of Microelectronic Circuits and System Duisburg Germany Department Signal Processing and System Design SYS the same Institute Germany

In this paper the impact of short channel effects on the performance of common-gate LNAs (CG-LNAs) is presented. It based on the modeling the MOSFET behavior including its intrinsic and extrinsic parasitics in all possible regions of operation. Characteristic performance figures of the used CMOS technology are defined and the bias dependent minimum input reflection coefficient and noise figure is determined. The paper shows furthermore the advantage of biasing the CG-LNA in the moderate inversion region

关键词： MOSFET circuits Noise figure CMOS technology Acoustic reflection Capacitors Transconductance microelectronics Linearity Inductors Frequency

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A high dynamic range, high linearity CMOS current-mode image sensor for computed tomography

A high dynamic range, high linearity CMOS current-mode image...

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European Conference on Solid-State circuits (ESSCIRC)

作者： R. Steadman G. Vogtmeier A. Kemna S.I. Quossai B.J. Hosticka Philips Research Laboratories Aachen Germany Fraunhofer Institute of Microelectronic Circuits and System Duisburg Germany

In this work, we show a high dynamic range current-mode detector for computer tomography application. A regulated current mirror structure has been implemented at pixel level that provides with 17 bits dynamic range and a noise floor below 3 pA/sub RMS/. Non-linearity is kept below 2% and signal bandwidth is higher than 10 kHz. A test structure with 4/spl times/4 pixel array is presented is this paper. Both photodiode and current mode amplifier have been integrated into the same CMOS standard process.

关键词： Dynamic range Linearity CMOS image sensors Image sensors Computed tomography Detectors Computer applications Application software Mirrors Noise level

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A 4/spl times/64 pixel CMOS image sensor for 3-D measurement applications

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IEEE Journal of Solid-State circuits 2004年第7期39卷 1208-1212页

作者： O. Elkhalili O.M. Schrey P. Mengel M. Petermann W. Brockherde B.J. Hosticka Fraunhofer Institute of Microelectronic Circuits and System Duisburg Germany Siemens AG Munich Germany

A 4/spl times/64 pixel 3-D CMOS imager based on time-of-flight (TOF) has been developed and successfully tested. The measurement range is up to 8 m with resolution of 1 cm. The scene depth is determined by measurement of the travel time of reflected laser pulses by employing a fast on-chip synchronous shutter (maximum shutter speed 30 ns). The multiple double short time integration (MDSI) algorithm enables suppression of the background illumination and correction for reflectance variations in the scene objects. The pixel size is 130/spl times/300 /spl mu/m/sup 2/. The sensor chip has been realized in a 0.5-/spl mu/m n-well standard CMOS process.

关键词： Pixel CMOS image sensors Layout Pulse measurements Testing Velocity measurement Time measurement Optical pulses Lighting Reflectivity

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Resolution prediction for bandpass-/spl Sigma//spl Delta/-modulators using SIMULINK behavior simulation

Resolution prediction for bandpass-/spl Sigma//spl Delta/-mo...

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IEEE International Symposium on circuits and systems (ISCAS)

作者： D. Weiler T. van den Boom B.J. Hosticka Fraunhofer Institute of Microelectronic Circuits and System Duisburg Germany

This paper presents a detailed survey of the impact of circuit non-idealities of bandpass sigma-delta modulators (BP-/spl Sigma//spl Delta/M) affecting the signal-to-noise and distortion ratio (SNDR) and therefor the resolution. The presented results have been developed using SIMULINK behavior simulations of a second order BP-/spl Sigma//spl Delta/M. A behavior simulation has the advantage of a fast simulation of any BP-/spl Sigma//spl Delta/M structure and provides a deeper understanding of the influence on the SNDR. The determined parameters are the sampling jitter AT, the sampling or kT/C-noise, and the OTA non-idealities finite DC gain A/sub v0/, gain-bandwidth GBW, slew-rate SR, and OTA-noise V/sub ***/, which are relevant in a switched capacitor realization of the BP-/spl Sigma//spl Delta/M. The simulated results are compared to theoretical values using transfer functions.

关键词： Predictive models Circuit simulation Signal resolution Sampling methods Delta-sigma modulation Distortion Jitter Strontium Capacitors Transfer functions

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High loop-filter-order /spl Sigma//spl Delta/-fractional-n frequency synthesizers for use in frequency-hopping-spread-spectrum communication-systems

High loop-filter-order /spl Sigma//spl Delta/-fractional-n f...

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IEEE International Symposium on circuits and systems (ISCAS)

作者： N. Christoffers R. Kokozinski S. Kolnsberg B.J. Hosticka Fraunhofer Institute of Microelectronic Circuits and System Duisburg Germany

Frequency-hopping spread-spectrum wireless digital communication-systems impose stringent requirements on both phase noise and settling time of PLL based frequency synthesizers employed in receivers and transmitters. If a /spl Sigma//spl Delta/-fractional-N-synthesizer is used either the reference frequency or the loop filter order must therefore be high. We theoretically investigate PLLs of higher order and find that the settling time of a sixth order PLL suitable for operation in a Bluetooth transceiver can be as low as 7 /spl mu/s in spite of a reference frequency of 16 MHz.

关键词： Frequency synthesizers Phase locked loops Spread spectrum communication Wireless communication Phase noise Transmitters Frequency locked loops Filters Bluetooth Transceivers

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Low noise, large area CMOS x-ray image sensor for C.T. application

Low noise, large area CMOS x-ray image sensor for C.T. appli...

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IEEE SENSORS

作者： A. Kemna W. Brockherde B. Hosticka E. Ozkan F. Morales-Serrano R. Steadman G. Vogtmeier Fraunhofer Institute of Microelectronic Circuits and System Duisburg Germany Philips Research Laboratories Aachen Germany

In this paper, we describe a novel CMOS X-ray active pixel sensor for indirect C.T. X-ray detection. Considerable noise reduction has been achieved by lowering the detector junction capacitance. For this purpose a new low capacitance, low dark current dot type photodiode based on minority diffusion has been developed. The dynamic range is expanded to 17 bit by the use of individual in-pixel automatic gain control. A photon noise limited detector exhibiting a 20 /spl times/ 10 pixel array with a frame rate of 3000 frames/sec has been realized in a 1.2 /spl mu/m CMOS process.

关键词： CMOS image sensors X-ray imaging Image sensors Detectors Capacitance Sensor phenomena and characterization X-ray detection Noise reduction Dark current Photodiodes

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A CMOS photodiode array with in-pixel data acquisition system

A CMOS photodiode array with in-pixel data acquisition syste...

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European Conference on Solid-State circuits (ESSCIRC)

作者： R. Steadman A. Kemna F. Morales G. Vogtmeier E. Ozkan W. Brockherde B. Hosticka Philips Research Laboratories Aachen Germany Fraunhofer Institute of Microelectronic Circuits and System Duisburg Germany

A CMOS photodetector array with in-pixel electronics has been developed for computed tomography (CT) applications. Consisting of 10/spl times/20 pixel array in-pixel electronics has been designed to achieve 17 bits dynamic range and a quantum limited system under CT operating range. A series of limitations have been overcome to integrate both photodiode and a charge-sensing amplifier at pixel level.

关键词： Photodiodes Data acquisition Computed tomography Photodetectors Sensor arrays CMOS process Capacitance Capacitors Laboratories microelectronics

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A 4/spl times/64 pixel CMOS image sensor for 3D measurement applications

A 4/spl times/64 pixel CMOS image sensor for 3D measurement ...

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European Conference on Solid-State circuits (ESSCIRC)

作者： O.M. Schrey O. Elkhalili P. Mengel M. Petermann W. Brockherde B.J. Hosticka Fraunhofer Institute of Microelectronic Circuits and System Duisburg Germany Corporate Technology Siemens AG Munich Germany

A 4/spl times/64 pixel CMOS image sensor which can capture three-dimensional images has been integrated in a 0.5/spl mu/m n-well standard CMOS processes. It is based on time-of-flight method and employs an active laser pulse illumination at 900nm optical wavelength. system bandwidth is limited by the refreshing time of the active laser source. The sensor employs the so-called "multiple double short time integration" (MDSI) method which enables compensation of background irradiance and correction of reflectivity variations in the object scene. The chip operates at 3.3V power supply voltage and a clock frequency of 5MHz, which yields a frame rate of 19.5 kHz. It has a fast synchronous shutter operating down to 30nsec. The pixel pitch is 130/spl mu/m /spl times/ 300 /spl mu/m and the total chip area is 58.3mm/sup 2/.

关键词： Pixel CMOS image sensors Wavelength measurement CMOS process Optical pulses Lighting Optical sensors Bandwidth Reflectivity Layout

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A new single chip optical CMOS detector for next generation optical storage systems

A new single chip optical CMOS detector for next generation ...

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Symposium on VLSI circuits

作者： I. Hehemann W. Brockherde H. Hofmann A. Kemna B.J. Hosticka Finkenstraβe 61 Fraunhofer Institute of Microelectronic Circuits and System Duisburg Germany Optical Recording Research Laboratory Thomson Villingen-Schwenningen Germany

In this paper a new fully integrated detector architecture for pick-up units in optical storage systems is presented. Apart from a special diode constellation for data recovery it features a 5/spl times/5 diode matrix for determination of the average spatial light power distribution across the detector. The chip, fabricated in a standard 0.6 /spl mu/m CMOS process, operates at a 3.3 V power supply and occupies 1.78/spl times/1.58 mm/sup 2/. It includes six high frequency readout and one low frequency readout paths.

关键词： Optical detectors Optical sensors Photodiodes Optical recording Optical signal processing Optical feedback Frequency Signal generators Optical noise Diodes

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