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IEEE International Symposium on circuits and systems (ISCAS)

作者： N. Stevanovic M. Hillebr B.J. Hosticka U. Iurgel A. Teuner Fraunhofer Institute of Microelectronic Circuits and System Duisburg Germany

In this contribution a novel camera system developed for high speed imaging will be presented. The core of the system consists of a CMOS image sensor manufactured in a 1 /spl mu/m standard CMOS process. The special merit of the image sensor is the capability to acquire more than 1000 frames/s using a global electronic shutter in each sensor cell. The image sensor itself is embedded in a sensor board that has been developed for digitizing the sensor's single serial analog output signal as well as for supplying the sensor with all control signals necessary for proper operation. Both the control signals and the digital output signal (RS-422) are generated on a FPGA-chip. Moreover, a graphical user interface adapted to the frame grabber card used (Matrox Pulsar) has been developed for the purposes of monitoring, high speed acquisition, and image processing.

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microelectronic components for a retina implant system

Microelectronic components for a retina implant system

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European Conference on Solid-State circuits (ESSCIRC)

作者： S. Kolnsberg T. Kneip X. Lu J. Huppertz R. Hauschild M. Schwarz D. Hammerschmidt B.J. Hosticka L. Ewe H.K. Trieu Fraunhofer Institute of Microelectronic Circuits and System Duisburg Germany

This work describes the architecture and realisation of microelectronic components for a retina implant system that will provide visual sensations to patients suffering from photoreceptor degeneration. Special camera circuitry has been developed for a high dynamic range of more than seven decades of optical resolution corresponding to the performance of the human eye. This image is converted into receptive field data for generation of the stimulation data. The former components are located outside of the eye and are wireless linked to an implanted flexible silicon multielectrode stimulator inside the eye, which generates electrical signals for electrostimulation of the retina. The image sensor and the implantable power and data receiver as well as the stimulator have been fabricated using standard CMOS-technology.

关键词： Retina microelectronic implants Photoreceptors Cameras circuits Dynamic range Stimulated emission Optical receivers Optical sensors Signal resolution

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Sensor systems-interface between environment and application

Sensor systems-interface between environment and application

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European Conference on Solid-State circuits (ESSCIRC)

作者： D. Hammerschmidt Fraunhofer Institute of Microelectronic Circuits and System Duisburg Germany

The rapidly growing market for sensor systems on the one hand boosts the development of new sensor principles and technologies [1,2], on the other hand the increasing fields of use require an integration of these sensors on system level under a wide spread of application conditions. This paper will discuss the main tasks that have to be solved by the electronic system, which interfaces the sensor and the application environment [3,4]. On side of the sensor physical points of view dominate the requirements, which, e.g., call for low noise readout, high gain, minimum sensor loading, and compensation of crossensitivities. The application requires completely different considerations, like compatibility with former solutions, standardized interfaces, low power consumption or networking capability as well as cost efficiency. Between these completely different classes of requirements electronic circuitry operates as a mediator featuring sophisticated readout electronics for each type of sensor, intermediate signal processing layers, and customisable interfaces that are usable for all kinds of sensors. After the general consideration of the above topics some examples of sensor systems will be presented and the individual solutions of the mentioned challenge will be discussed from the circuit designers point of view. At last some approaches for future developments of sensor systems will be presented.

关键词： Sensor systems Sensor arrays Magnetic sensors Sensor systems and applications Chemical sensors Costs Consumer electronics circuits Pressure measurement Manufacturing

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Surveillance sensor systems using CMOS imagers

Surveillance sensor systems using CMOS imagers

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International Conference on Image Analysis and Processing

作者： A. Teuner M. Hillebrand B.J. Hosticka S.-B. Park J.E. Santos Conde N. Stevanovic Fraunhofer Institute of Microelectronic Circuits and System Duisburg Germany

Surveillance sensors are being applied in factory automation systems, traffic control, entrapment protection, automotive safety systems and in other applications where information about the occupancy of a scene is required. In order to detect object motion several methods exploiting distinct physical phenomena, e.g. passive infrared sensors or active microwave sensors, have been realized. When comparing all of the applicable methods, the electro-optical approach performs very well with respect to the spatial resolution of the monitored area. Therefore, electro-optical sensors are able to provide additional information, e.g. to predict the direction of motion, or to localize and identify objects. However, convenient image processing systems using CCD sensors for image acquisition and DSP or /spl mu/P boards for signal processing and classification are not well suited for dedicated, powerful and cost-effective optical sensor solutions. In contrast to this mainstream approach CMOS based imaging technologies offer novel solutions in both the design and applications of electro-optical surveillance sensors. This contribution discusses CMOS imager operating principles and describes certain architectures and applications for passive and active surveillance sensors. The capabilities for realizing on-chip motion detection and range sensing using fast shutter devices are illustrated. We conclude with a discussion of the status of CMOS surveillance sensors and suggest trends for future applications.

关键词： Surveillance Sensor systems CMOS image sensors Sensor phenomena and characterization Motion detection Electrooptic devices Optical sensors CMOS technology Sensor systems and applications Manufacturing automation

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Environmental data card utilizing SAW gas sensors and PCMCIA interface

Environmental data card utilizing SAW gas sensors and PCMCIA...

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IEEE Symposium (IUS) Ultrasonics

作者： H. Stab M. Ploetner O. Berger H. Koenig H. Graetz W.-J. Fischer Serniconductor and Microsystems Technology Laboratory Dresden University of Technology Dresden Germany Fraunhofer Institute of Microelectronic Circuits and System Dresden Germany

Nowadays the monitoring of environmental data like air pollution concentrations demands low-priced, mobile, and easily adaptable gas sensor systems. To meet such requirements we are developing an environmental data card for gas detection based on a PCMCIA card carrying up to four SAW chemical gas sensors in a small air chamber. The utilization of this interface card with its geometry internationally standardized offers widely applicable solutions for both mobile gas monitoring using a laptop and autonomous operation with a separate power supply e.g. at rather exposed places. The concept and the set-up of the system were discussed earlier. This paper presents results of the optimization of SAW sensor layer properties and of film conductivity probes on the sensor chips exposed to NO 2 gas. Furthermore the updated set-up of the system, the data acquisition and the rather complicated managing of temperature, gas flow and signal processing are discussed. New results of the interworking of the multisensor card components are reported.

关键词： Surface acoustic waves Gas detectors Monitoring Air pollution Chemical sensors Geometry Portable computers Power supplies Conductive films Conductivity

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A 16/spl times/16 nonvolatile programmable analog vector-matrix multiplier

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IEEE Journal of Solid-State circuits 1998年第10期33卷 1502-1509页

作者： A. Aslam-Siddiqi W. Brockherde B.J. Hosticka Fraunhofer Institute of Microelectronic Circuits and System Duisburg Germany

In this paper, we present a 16/spl times/16 analog vector-matrix multiplier with analog electrically erasable and programmable read-only memories (EEPROMs) used as nonvolatile storage for the weight matrix values. Each weight matrix value is stored in an EEPROM transistor as a change of the threshold voltage, and the same EEPROM transistor is used for the multiplication by utilizing the square-law characteristic of the metal-oxide-semiconductor field-effect transistor. This allows a very simple circuit for the multiplier array with a size of about 1/spl times/1 mm/sup 2/. The vector-matrix multiplier has been fabricated in a 1,5-/spl mu/m single-poly complementary metal-oxide-semiconductor/EEPROM technology and successfully tested.

关键词： EPROM Nonvolatile memory FETs Capacitors PROM circuits Voltage Silicon Programming profession Image storage

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Structural characterization of local SIMOX-substrates

Structural characterization of local SIMOX-substrates

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IEEE SOI-3D-Subthreshold microelectronics Technology Unified Conference (S3S)

作者： R. Van Bentum H. Vogt Fraunhofer Institute of Microelectronic Circuits and System Duisburg Germany

Thin film SOI substrates are very attractive for low power applications due to the lower subthreshold swing, higher switching speed, lower power consumption and higher degree of integration as compared to bulk circuits. Also, due to the total dielectric isolation, SOI transistors show no latch-up effect and lower leakage currents, and the latter also makes them very attractive for smart power applications. Smart power devices are, for example, DMOS transistors or IGBTs that are controlled by standard MOS circuits. For high currents, these power devices are often built as vertical devices. At the fraunhofer institute, local SIMOX wafers are used for smart power applications to isolate the low-voltage part from the power part of the circuit dielectrically instead of the normal junction isolation (Vogt et al., 1993). In this work, a structural comparison is made between local SIMOX substrates produced by four different methods. The samples were prepared (1) by local oxygen implantation, (2) by a LOCOS process followed by wet chemical removal of the oxide, (3) by dry etching of the silicon film and the BOX, and (4) by wet chemical etching of the silicon film and the BOX. The samples were examined by SEM and TEM analysis, AFM measurements and defect etching.

关键词： Dielectric substrates Dielectric thin films Chemical processes Dry etching Silicon Semiconductor films Thin film circuits Switching circuits Energy consumption Leakage current

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Single chip CMOS image sensors for a retina implant system

Single chip CMOS image sensors for a retina implant system

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IEEE International Symposium on circuits and systems (ISCAS)

作者： M. Schwarz R. Hauschild B.J. Hosticka J. Huppertz T. Kneip S. Kolnsberg W. Mokwa H.K. Trieu Fraunhofer Institute of Microelectronic Circuits and System Duisburg Germany

This work describes the architecture and realization of microelectronic components for a retina implant system that will provide visual sensations to patients with photoreceptor degeneration by applying electrostimulation of the intact retinal ganglion cell layer. Special circuitry has been developed for a fast single-chip CMOS image sensor system which provides high dynamic range of more than seven decades (without a mechanical shutter) corresponding to the performance of the human eye. This image sensor system is directly attachable to a digital filter and a signal processor that compute the so-called receptive-field function for generation of the stimulation data. These external components are wireless linked to an implanted flexible silicon multielectrode stimulator which generates electrical signals for electrostimulation of the intact ganglion cells. All components, including additional hardware for digital signal processing and wireless data and power transmission have been developed for fabrication using our in-house standard CMOS-technology.

关键词： CMOS image sensors Retina Signal generators microelectronic implants Photoreceptors circuits Dynamic range Humans Image sensors Digital filters

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A motion detection system based on a CMOS photo sensor array

A motion detection system based on a CMOS photo sensor array

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IEEE International Conference on Image Processing

作者： S.-B. Park A. Teuner B.J. Hosticaka Fraunhofer Institute of Microelectronic Circuits and System Duisburg Germany

The aim of motion detection in image sequences using image analysis approaches has been established for a long time. Moreover, in applications like surveillance or occupancy detection segmentation of moving objects is the first processing step. Conventional image processing systems, usually consisting of a CCD camera, a frame grabber, and a processing unit, are not suitable for motion analysis because they have been developed without considering the co-operation of the image acquisition unit and the image processing unit. We present a novel image processing system that fuses the acquisition and processing task in order to realise a flexible, powerful, and cheap image processing system that also enables motion detection in industrial and home applications like occupancy detection.

关键词： Sensor arrays Motion detection Sensor systems Image processing CMOS image sensors Image sequences Image motion analysis Image sequence analysis Surveillance Object detection

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Smart 2048-pixel linear CMOS image sensor

Smart 2048-pixel linear CMOS image sensor

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European Conference on Solid-State circuits (ESSCIRC)

作者： W. Brockherde B.J. Hosticka M. Petermann M. Schanz R. Spors Fraunhofer Institute of Microelectronic Circuits and System Duisburg Germany

A standard-CMOS 2048-pixel linear image sensor with electronic shutter function and random pixel access is presented. As sensing element a floating n-well PMOS transistors with high photosensitivity is used. The devices operates with a single 5V supply and a single external clock. It exhibits a wide dynamic irradiation range of 177dB with integration time ranging from 1.4µs to 4s. The 33V/µJ/cm 2 -responsivity sensor has a peak SNR of 81dB and operates up to 125°C with a TC of 5.1mV/°C. The IC integrates all bias, control, electronic shutter, dark current cancellation, and readout electronics.

关键词： CMOS image sensors Pixel Capacitors Photoconductivity Sensor arrays Image sensors MOSFETs Clocks Dynamic range Dark current

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