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6. GMM-Workshops Mikro-Nano-Integration - 6th GMM Workshop on Micro-Nano-Integration

作者： Jupe, A. Figge, M. Goehlich, A. Vogt, H. Fraunhofer Institute for Microelectronic Circuits and Systems Finkenstr. 61 Duisburg47057 Germany

ISBN: (纸本)9783800742783

The fraunhofer IMS has developed a new Post-CMOS process based on DRIE and ALD technique, which can be used for the production of 3D micro- and nanostructures. As an example of this technology multi-electrode arrays (MEAs) with integrated ruthenium nano-lawn are presented for biomedical applications. © 2016 VDE VERLAG GMBH ∙ Berlin ∙ Offenbach

关键词： Nanostructures

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High temperature GaN gate driver in SOI CMOS technology

High temperature GaN gate driver in SOI CMOS technology

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IMAPS International Conference and Exhibition on High Temperature Electronics, HiTEC 2016

作者： Kappert, Holger Braun, Sebastian Kordas, Norbert Dreiner, Stefan Kokozinski, Rainer Fraunhofer Institute for Microelectronic Circuits and Systems IMS Finkenstrasse 61 Duisburg47057 Germany

Power electronics is a rapidly developing application area for high temperature electronics. Wide bandgap semiconductors have intrinsic advantages for high temperature operation due to the large bandgap in comparison to silicon based semiconductors. Especially GaN is a promising material for power semiconductors due to the possibility to process GaN on silicon carrier wafers, which results in lower device costs in comparison to SiC. In addition GaN provides higher switching frequencies and lower on-resistances of power devices. In combination these advantages enable the design of high performing, small size power modules operating at elevated temperatures. However, in order to exploit all benefits from GaN technology, new approaches in driver design are necessary. In this work a GaN specific gate driver supporting increased switching frequency, low driver output resistance, and GaN specific control voltages is presented. The driver has been implemented in a 0.35 micron thin film SOI-CMOS technology allowing high temperature operation up to 250 °C. The driver output characteristic is digitally adjustable with configuration data stored in an on-chip non-volatile memory based on EEPROM.

关键词： Gallium nitride

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Experimental reliability studies and SPICE simulation for EEPROM at temperatures up to 450°C

Experimental reliability studies and SPICE simulation for EE...

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作者： Kelberer, A. Dreiner, S. Grella, K. Dittrich, D. Kappert, H. Vogt, H. Paschen, U. Fraunhofer Institute for Microelectronic Circuits and Systems IMS Finkenstraße 61 Duisburg47057 Germany

This article presents reliability studies of single polysilicon electrically erasable programmable read-only memory (EEPROM) cells at temperatures from 50°C to 450°C. The technically challenging measurements at elevated temperatures >250°C have been carried out for accelerated reliability studies. Furthermore, a SPICE macro model has been extended to the wide temperature range to describe the retention and endurance performance of the memory cell and to enable a better insight into the physics involved. © 2016 International microelectronics Assembly and Packaging Society.

关键词： Reliability

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Reproducibility of Photoplethysmography-Based Local Pulse Transit Time Measurement

Reproducibility of Photoplethysmography-Based Local Pulse Tr...

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Annual International Conference of the IEEE Engineering in Medicine and Biology Society

作者： Nils Beckmann Reinhard Viga Aysegul Dogangun Anton Grabmaier Department of Electronic Components and Circuits University of Duisburg-Essen Duisburg Germany Competence Center Personal Analytics University of Duisburg-Essen Duisburg Germany Department of Electronic Components and Circuits Fraunhofer Institute for Microelectronic Circuits and Systems Duisburg Germany

There are several previously published approaches of measuring local pulse transit time (PTT). One of these approaches is to use two optical sensors based on photoplethysmography (PPG). However, little information about reproducibility in PPG based PTT measurement is available. Therefore, we performed a small sample size study (n = 5) to investigate quantitative criteria for reproducible PTT measurement. The inflection point as a characteristic feature of the pulse wave showed the most stabile results under varying conditions. Furthermore, we found that correlation between related pulse waves could be used as a threshold for signal quality. We suggest to implement a real-time operator feedback based on the found criteria to ensure reproducible PTT measurements.

关键词： Sensors Signal to noise ratio Correlation Correlation coefficient Feature extraction Time measurement Pulse measurements

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Time and frequency synchronization characteristics in rapid prototyping environments

Time and frequency synchronization characteristics in rapid ...

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European Conference on Smart Objects, systems and Technologies 2016, Smart SysTech 2016

作者： Schmidt, Philip Meyer, Stephan vom Bögel, Gerd Grabmaier, Anton Fraunhofer IMS Institute for Microelectronic Circuits and Systems Duisburg Germany Fraunhofer FKIE Institute for Communication Information Processing and Ergonomics Wachtberg Germany

ISBN: (纸本)9783800742295

This paper presents the transfer of a real-time testbed communication system, where the wireless measured bit error rate (BER) matches the theoretical one, into a Matlab-Simulink and GNURadio model. With this model we investigate the characteristics of the time and frequency synchronization algorithm with respect to several frequency offsets and different matched filter interpolations. The chosen frequency offset up to 10 % is identical to one expected in radio frequency identification (RFID) systems. In the following we show that the constructed GNURadio model acts in combination with an Ettus Research universal software radio peripheral (USRP) as the theoretically expected BER. Finally, we will highlight the benefits of the development of test-beds combining USRP, GNURadio, and Matlab-Simulink in the context of rapid prototyping. © VDE VERLAG GMBH.

关键词： Simulink

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Implementation of an Integrated Differential Readout Circuit for Transistor-Based Physically Unclonable Functions

Implementation of an Integrated Differential Readout Circuit...

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Austrian Workshop on microelectronics (Austrochip)

作者： Benjamin Willsch Kai-Uwe Müller Qi Zhang Julia Hauser Stefan Dreiner Alexander Stanitzki Holger Kappert Rainer Kokozinski Holger Vogt Fraunhofer Institute for Microelectronic Circuits and Systems (IMS) Duisburg Germany Chinese Academy of Sciences Shanghai Institute of Micro-system and Information Technology Shanghai China University of Chinese Academy of Sciences Beijing China Department of Electronic Components and Circuits University of Duisburg-Essen Duisburg Germany

Physically Unclonable Functions (PUFs) offer enticing possibilities to incorporate hardware-based security on semiconductor device level. In order to make efficient use of PUF functionality in lightweight cryptographic applications, a low-overhead implementation in terms of chip area and power consumption is required. In this paper a fully differential readout circuit is proposed that allows the generation of multiple bits from selected pairs of PUF-elements. The IC-design and working principle are explained on basis of a critically-sized nMOS transistor array serving as a PUF-primitive. First results obtained from circuit simulations and wafer-level measurements of 30 PUF-instances fabricated in a 0.35 μm CMOS technology are presented. Evaluation of the intraand inter-Hamming distance with average values of 9.42% and 49.46%, respectively, shows that device identification based on the extracted keys is feasible. In order to increase the number of unique keys obtainable for each PUF-instance layout improvements in form of additional row select connections are proposed.

关键词： Transistors Logic gates Standards Quantization (signal) CMOS technology Resistors Monte Carlo methods

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Development of a low temperature SiC protection layer for post-CMOS MEMS fabrication utilizing vapour release technologies

Development of a low temperature SiC protection layer for po...

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Micro-Nano-Integration;6. GMM-Workshop

作者： Christian Walk Yizhou Chen Nino Vidovic Andreas Kuhl Michael Goertz Holger Vogt Fraunhofer Institute for Microelectronic Circuits and Systems

In post-CMOS processing a sufficient protection of the underlying CMOS structures, while applying sacrificial layer release technologies to realize free standing MEMS, is required. In this work, a low temperature Silicon Carbide (SiC) process at 300 deg C by Inductively Coupled Plasma Chemical Vapour Deposition (ICPCVD) has been developed. It has been demonstrated, that SiC provides an excellent protection character in HF/H2O vapour mixtures. For proof of principle, perforated free-standing SiC-structures with a layer thickness of less than 200 nm and 80 mm in diameter have successfully been released in a vapour etch process.

关键词： SILICON CARBIDE layer thickness Vapors Microelectromechanical systems Common Cold Proof

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MoveHN-A database to support the development of motion based biosignal processing systems

MoveHN-A database to support the development of motion based...

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European Signal Processing Conference

作者： Andreas Kitzig Stefan Schroter Edwin Naroska Gudrun Stockmanns Reinhard Viga Anton Grabmaier Faculty of Electrical Engineering and Computer Science Ambient Intelligence Laboratory Krefeld Germany Universitat Duisburg-Essen Duisburg Nordrhein-Westfalen DE Department of Electronic Components and Circuits University of Duisburg-Essen Fraunhofer Institute for Microelectronic Circuits and Systems (IMS) Duisburg Germany

In the field of signal processing, pattern recognition and also modeling and simulation, it is often necessary to use large data sets. These allow reliable, independent and test case spanning development of algorithms or even of complete systems. The data is usually taken from existing data sets such as TIMIT for speech recognition and processing or EPILEPSIAE to develop algorithms for epileptic seizure prediction, to give just two examples. Apart from the fact that some of these databases imply a considerable cost factor and thus are not accessible to all research groups, even greater problems arise if no data is available at all. In the field of speech recognition, this problem was solved more or less by creating databases. In the area of biosignal processing with a focus on the functionalization of furniture for care and clinical facilities, there is still a need for large data sets. This was also the case with biomechanical modeling of functionalized furniture, since up to now none or few data on the human movement sequences were available. In order to overcome this deficiency, the following paper presents a new database of motion patterns, which is intended to support the development of algorithms for motion detection as well as modeling biosignal processing. The database can be used and downloaded by any interested researcher for free.

关键词： Hidden Markov models Mathematical model Biological system modeling Databases Medical services Sensor systems

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Post-CMOS integrated ALD 3D micro- and nanostructures and application for multi-electrode arrays

Post-CMOS integrated ALD 3D micro- and nanostructures and ap...

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Micro-Nano-Integration;6. GMM-Workshop

作者： A. Jupe M. Figge A. Goehlich H. Vogt Fraunhofer Institute for Microelectronic Circuits and Systems

关键词： electrode configuration Nanostructure multi-electrode Complementary Metal Oxide Semiconductor Adrenoleukodystrophy CMOS process Integrate

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Development of a Post-CMOS Compatible Nanoporous Thin Film layer Based on Al2O3

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IOP Conference Series: Materials Science and Engineering 2018年第1期350卷

作者： Ö Dogan A Buschhausen C Walk W Mokwa H Vogt Fraunhofer Institute for Microelectronic Circuits and Systems 47057 Duisburg Germany Department of Microelectronics University of Applied Sciences 40476 Düsseldorf Germany Department of Materials in Electrical Engineering 1 RWTH Aachen University 52074 Aachen Germany Department of Electronic Components and Circuits University of Duisburg-Essen 47057 Duisburg Germany

Porous alumina is a popular material with numerous application fields. A post-CMOS compatible process chain for the fabrication of nanoporous surface based on Al2O3 by atomic layer deposition (ALD) is presented. By alternately applying small numbers of ALD cycles for Al2O3 and ZnO, a homogenous composite was accomplished, for which the principle of island growth of ALD materials at few deposition cycle numbers was utilised. By selective texture-etching of ZnO content via hydrofluoric acid (HF) in vaporous phase at 40 °C and 10.67 mbar, a porous surface of the etch resistant Al2O3 could be achieved. TOF-SIMS investigations verified the composition of ALD composite, whereas AFM and high resolution SEM images characterised the topographies of pre- and post-etched samples. Pores with opening diameters of up to 15 nm could be detected on the surface after vaporous HF treatment for 2 minutes. The amount of pores increased after an etching time of 5 minutes.

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